Phototransistor im MIDLED-Gehause Phototransistor in MIDLED package Lead (Pb) Free Product - RoHS Compliant SFH 3600 SFH 3605 SFH 3605 SFH 3600 Wesentliche Merkmale Features * Enger Empfangswinkel (20) * Geringe Bauhohe (1,6 mm) * Als Toplooker und Sidelooker einsetzbar SFH 3600: Gurtung als Toplooker SFH 3605: Gurtung als Sidelooker * Emitter im gleichen Gehause (SFH 46xx) verfugbar * Narrow angle (20) * Low profile component (1,6 mm) * Usable as top-looking and side-looking device SFH 3600: Taping as Toplooker SFH 3605: Taping as Sidelooker * Emitter in same package (SFH 46xx) available Anwendungen Applications * * * * * * * * Lichtschranken, Lichtvorhange Sensorik (Consumer, Industrieelektronik) Automobilanwendungen Naherungssensor Interrupters, Lightcurtains Sensors (Consumer, Industrial applications) Automotive applications proximity sensor Typ Type Bestellnummer Ordering Code Fotostrom , (Ee=0.1 mW/cm2,=950 nm VCE = 5 V) Photocurrent Ipce (A) SFH 36001) Q65110A1573 100-500 SFH 3600 -2/31) Q65110A2665 100-320 SFH 3600 -3/41) Q65110A2666 160-500 SFH 36051) Q65110A1574 100-500 1) Q65110A2663 100-320 SFH 3605 -3/41) Q65110A2664 160-500 SFH 3605 -2/3 1) nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 2:1) / only one group in one packing unit (variation lower 2:1) 2007-04-03 1 SFH 3600, SFH 3605 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg - 40 ... + 100 C Kollektor-Emitterspannung Collector-emitter voltage VCE 35 V Kollektorstrom Collector current IC 15 mA Kollektorspitzenstrom, < 10 s Collector surge current ICS 75 mA Emitter-Kollektorspannung Emitter-collector voltage VEC 7 V Verlustleistung, TA = 25 C Total power dissipation Ptot 130 mW Warmewiderstand Sperrschicht/Umgebung 1) Thermal resistance junction RthJA 340 K/W Warmewiderstand Sperrschicht/Lotstelle2) Thermal resistance junction RthJS 180 K/W 1) bei Montage auf FR4 Platine, Padgroe je 16 mm2 / when mounted on PC-board (FR4), padsize 16 mm2 each 2) bei Montage auf Metall-Block / when mounted on metal block Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity S max 990 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax 500 ... 1100 nm Bestrahlungsempfindliche Flache Radiant sensitive area A 0.04 mm2 Abmessungen des Chips Dimensions of chip LxBxH LxWxH 0.35 x 0.35 x 0.185 mm x mm x mm 2007-04-03 2 SFH 3600, SFH 3605 Kennwerte (TA = 25 C) Characteristics (cont'd) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Halbwinkel Half angle 20 Grad deg. Kapazitat, VCE = 5 V, f = 1 MHz, E = 0 Capacitance CCE 1.3 pF Dunkelstrom Dark current VCE = 20 V, E = 0 ICEO 1 ( 50) nA Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit -2 -3 IPCE 100 .. 200 160 ... 320 250 ... 500 A Anstiegszeit/Abfallzeit, = 950 nm Rise and fall time IC = 100 A, VCC = 5 V, RL = 10 k tr , t f 30 45 70 s Kollektor-Emitter-Sattigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) x 0.3, Ee = 0.1 mW/cm2, = 950 nm VCEsat 150 150 150 mV Fotostrom, = 950 nm Photocurrent Ee = 0.1 mW/cm2, VCE = 5 V 1) -4 IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe / IPCEmin is the min. photocurrent of the specified group. 2007-04-03 3 SFH 3600, SFH 3605 Directional Characteristics Srel = f () 40 30 20 10 0 OHF02432 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 0.6 0.4 0 Rel. Spectral Sensitivity, Srel = f (), axial direction 20 OHF02405 100 40 60 80 100 120 Dark Current ICEO = f (VCE), E = 0 S rel % IR Dark Current ICEO = f (TA), VCE = 20 V, E = 0 OHF02420 10 1 nA OHF00380 10 3 nA CEO 80 10 2 70 10 0 60 10 1 50 40 10 -1 30 10 0 20 10 0 400 500 600 700 800 900 nm 1100 10 -2 0 5 10 15 20 25 V 30 VR Photocurrent IPCE = f (TA), VCE = 5 V, normalized to 25 C PCE Collector-Emitter Capacitance CCE = f (VCE), f = 1 MHz OHF01524 1.6 PCE 25 C CE 1.4 OHF00592 3.0 pF 2.5 1.2 2.0 1.0 1.5 0.8 0.6 1.0 0.4 0.5 0.2 0 -25 0 25 50 75 C 100 0 -2 10 10 -1 10 0 2007-04-03 10 1 V 10 2 VCE TA 4 10 -1 0 20 40 60 80 C 100 TA SFH 3600, SFH 3605 Mazeichnung Package Outlines Isolating area 1.7 1.5 0.55 0.42 0.53 0.83 0.53 2.35 2.15 (1.2) 0.75 0.55 0.42 0.83 Silicone area1) 3.3 2.9 0.75 Pad 1 metallisation 1) (0.8) Pad 2 metallisation Device casted with silicone. Avoid mechanical stress on silicone surface. Backside metallisation OHF02956 Mae in mm (inch) / Dimensions in mm (inch). Gehause package MID mit klarem Silikonverguss MID casted with clear Silicone Anschlussbelegung Pin configuration Pad 1 = Kollektor / collector Pad 2 = Emitter / emitter 1) Verarbeitungshinweis: Das Gehause ist mit Silikon vergossen. Mechanischer Stre auf der Bauteiloberflache sollte so gering wie moglich gehalten werden. 1) Handling indication: The package is casted with silicone. Mechanical stress at the surface of the unit should be as low as possible. 2007-04-03 5 SFH 3600, SFH 3605 Empfohlenes Lotpaddesign Recommended Solder Pad Design Verarbeitet als Toplooker Mounted as toplooker SFH 3600 2.4 1.35 Padgeometrie fur verbesserte Warmeableitung 4.0 Paddesign for improved heat dissipation Cu-Flache > 16 mm 2 Cu-area Lotstopplack Solder resist OHF02422 Verarbeitet als Sidelooker Mounted as sidelooker SFH 3605 1.7 1.25 Padgeometrie fur verbesserte Warmeableitung 4.5 Paddesign for improved heat dissipation Cu-Flache > 16 mm 2 Cu-area Lotstopplack Solder resist 2007-04-03 OHF02421 6 SFH 3600, SFH 3605 Lotbedingungen Soldering Conditions Reflow Lotprofil fur bleifreies Loten Reflow Soldering Profile for lead free soldering OHLA0687 300 Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile C T Vorbehandlung nach JEDEC Level 2 Preconditioning acc. to JEDEC Level 2 (nach J-STD-020C) (acc. to J-STD-020C) 255 C 240 C 250 C 260 C +0 -5 C 5 245 C C C 235 C +5 -0 C 217 C 10 s min 200 30 s max Ramp Down 6 K/s (max) 150 100 s max 120 s max 100 Ramp Up 3 K/s (max) 50 min. condition for IR Reflow Soldering: solder point temperature 235 C for at least 10 sec. 25 C 0 0 50 100 150 200 250 s 300 t Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com (c) All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2007-04-03 7