XI'AN IR-PERI Company PRELIMINARY " HALF-BRODGE" IGBT INT-A -PAK GA50TS120K Short Circuit Rated Ultra-FastTM Speed IGBT Features * * VCES=1200V Generation 5 IGBT NPT technology UltraFast optimized high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode. Very low conduction and switching losses HEXFRED TM antiparallel diodes with ultra-soft recovery Industry standard package UL recongnition pending Short circuit rated 10 s * * * * * VCE(on) typ.=2.5V @VGE=15V,IC=50A Benefits * * * Increased operating efficiency Direct mounting to heatsink Performance optimized for power conversion: UPS, SMPS, Welding,Mortor Control Lower EMI, requries less snubbing * Absolute Maximum Ratings Parameter VCES IC @ Tc=25oC IC @ Tc=85oC ICM ILM IFM VGE VISOL PD @ TC =25oC PD @ TC =85oC TJ TSTG Collector- to- Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed collector Current Peak switching Current Peak Diode Forward Current Gate- to- Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t =1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. Units 1200 75 50 100 100 100 20 2500 417 217 -40 to +150 -40 to +125 V A V W C o Termal / Mechanical Characteristics Parameter RJC RJC RCS Termal Resistance, Junction-to- Case- IBGT Termal Resistance, Junction-to- Case- Diode Termal Resistance, Csar-to- Sink- Module Mouting Torque, Case-to-Heatsink Mouting Torque, Case-to-Terminal 1,2 & 3 Weight of Module 1 http://store.iiic.cc/ Typ. Max. 0.1 200 0.30 0.70 4.0 3.0 - Units o C/W N.m g XI'AN IR-PERI Company GA50TS120K Electrical Characteristics @ TJ=25oC(unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 VGE=0V, IC=1mA VCE(ON) Collector-to-Emitter Voltage 2.5 VGE=15V, IC=50A 2.7 V VGE=15V, IC=50A,TJ=125oC VGE(th) Gate Threshold Voltage 4.5 5.5 DVGE(th)DTJ Temperature Coeff. of Threshold Voltage -11 gfe Forward Ttansconductance 72 S VCE=25V, IC=50A ICES Collector - to - Emitter Leaking Current 1.0 mA VGE=0V, VCE=1200V 10 VCE=6V, IC=500A mV/oC VCE=VGE, IC=500A VGE=0V, VCE=1200V, TJ=125oC VFM IGES Diode Forward Voltage - Maximum Gate - to - Emitter Leakage Current 2.0 2.5 1.8 100 V IF=50A , VGE=0V IF=50A , VGE=0V ,TJ=125oC nA VGE= 20V Dynamic Characteristics - TJ=125oC (unless otherwise specified) Parameter Min. Typ. Max. 397 596 67 100 132 197 Turn - On Delay Time 100 Qg Total gate charge ( turn - on ) Qge Gate - Emitter charge ( turn - on ) Qgc Gate - Collector charge ( turn - on ) Td(on) Units Conditions VCC= 400V nC IC=60A TJ =25oC RG1 =15 , RG2 = 0 tr Rise Time 90 Td(off) Turn - Off Delay Time 287 VCC=720V tf Fall Time 60 VGE= 15V Eon Turn - On Switching Energy 10 Eoff(1) Turn - Off Switching Energy 4 Ets(1) Total Switching Energy 14 20 nS IC = 50A Inductor load mJ Cies Input Capacitance 8933 Coes Output Capacitance 397 Cres Reverse Transfer Capacitance 77 trr Diode Reverse Recovery Time 101 nS IC = 50A Irr Diode Peak Reverse Current 66 A RG1=15 Qrr Diode Recovery Charge 3616 nC RG2=0 di(rec)M/dt Diode Peak Rate of Fall of Recovery 999 A/s VCC=720V VGE = 0V pF f =1MHZ During tb Tsc Short circuit withstand time VCC = 30V di/dt=1200A/s 10 s VCC=720V, VGE= 15V Min. RG1=15, VCEP=1100V 2 www.irf.com http://store.iiic.cc/ XI'AN IR-PERI Com pany Appendix: Circuit configuration for Half bridge IGBT Modules T----Half Bridge H---Chopper High Side L---Chopper Low Side T*K---Common Anode Half Bridge 3(C) 1(E C) 4(G) 5(E) 2(E) 6(G) 3(C) 7(E) 1(E K) 4(G) GAxxxTxxxx 3(K) 2(A) 5(E) GAxxxHxxxx 1(A C) 2(E) 6(G) 3(C) 7(E) 1(E E) 4(G) GAxxxLxxxx 5(E) 7(E) GAxxxTxKxxx 3 http://store.iiic.cc/ 2(C) 6(G)