TSFF5410 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES * * * * * * * * * * * * * * Package type: leaded Package form: T-13/4 Dimensions (in mm): 5 Leads with stand-off Peak wavelength: p = 870 nm High reliability High radiant power High radiant intensity Angle of half intensity: = 22 Low forward voltage Suitable for high pulse current operation High modulation bandwidth: fc = 24 MHz Good spectral matching to Si photodetectors Compliant to RoHS directive 2002/95/EC and accordance to WEEE 2002/96/EC * Halogen-free according to IEC 61249-2-21 definition 94 8390 DESCRIPTION TSFF5410 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. in APPLICATIONS * Infrared video data transmission between camcorder and TV set * Free air data transmission systems with high modulation frequencies or high data transmission rate requirements PRODUCT SUMMARY COMPONENT Ie (mW/sr) (deg) P (nm) tr (ns) 70 22 870 15 TSFF5410 Note Test conditions see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-13/4 TSFF5410 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITION VR 5 UNIT V Forward current IF 100 mA mA Peak forward current tp/T = 0.5, tp = 100 s IFM 200 Surge forward current tp = 100 s IFSM 1 A PV 180 mW Power dissipation Junction temperature Tj 100 C Operating temperature range Tamb - 40 to + 85 C Storage temperature range Tstg - 40 to + 100 C t 5 s, 2 mm from case Tsd 260 C J-STD-051, leads 7 mm, soldered on PCB RthJA 230 K/W Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 C, unless otherwise specified Document Number: 81091 Rev. 1.7, 29-Jun-09 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 1 TSFF5410 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero 120 200 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 160 140 120 RthJA = 230 K/W 100 80 60 40 100 80 RthJA = 230 K/W 60 40 20 20 0 0 0 10 21142 20 30 40 50 60 70 80 0 90 100 Tamb - Ambient Temperature (C) 21143 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of e TEST CONDITION SYMBOL IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s IF = 1 mA TYP. MAX. UNIT VF 1.5 1.8 V VF 2.3 3.0 TKVF - 1.8 VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj IF = 100 mA, tp = 20 ms Ie MIN. 10 A 135 mW/sr 125 45 70 V mV/K pF IF = 1 A, tp = 100 s Ie 700 mW/sr IF = 100 mA, tp = 20 ms e 50 mW IF = 100 mA TKe - 0.35 %/K 22 deg nm Angle of half intensity Peak wavelength IF = 100 mA p 870 Spectral bandwidth IF = 100 mA 40 nm Temperature coefficient of p IF = 100 mA TKp 0.25 nm/K Rise time IF = 100 mA tr 15 ns Fall time IF = 100 mA tf 15 ns IDC = 70 mA, IAC = 30 mA pp fc 24 MHz d 2.1 mm Cut-off frequency Virtual source diameter Note Tamb = 25 C, unless otherwise specified www.vishay.com 2 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81091 Rev. 1.7, 29-Jun-09 TSFF5410 High Speed Infrared Emitting Diode, Vishay Semiconductors 870 nm, GaAlAs Double Hetero BASIC CHARACTERISTICS Tamb = 25 C, unless otherwise specified 1.25 e rel - Relative Radiant Power Tamb < 50 C tP/T = 0.01 1000 IF - Forward Current (mA) 0.02 0.05 0.1 0.2 0.5 100 0.01 0.1 1 10 0.75 0.5 0.25 0 780 100 tP - Pulse Duration (ms) 16031 1.0 Fig. 3 - Pulse Forward Current vs. Pulse Duration 980 880 - Wavelength (nm) 95 9886 Fig. 6 - Relative Radiant Power vs. Wavelength 0 10 20 100 tP = 100 s tP/T = 0.001 10 40 1.0 0.9 50 0.8 60 80 1 0 18873 1 3 2 VF - Forward Voltage (V) 4 Fig. 4 - Forward Current vs. Forward Voltage 0.6 94 8883 0.4 0.2 0 Fig. 7 - Relative Radiant Intensity vs. Angular Displacement 1 1000 0 e, Ie - Attenuation (dB) Ie - Radiant Intensity (mW/sr) 70 0.7 - Angular Displacement 30 Ie rel - Relative Radiant Intensity IF - Forward Current (mA) 1000 100 10 1 0.1 1 18220 10 100 IF - Forward Current (mA) 1000 Fig. 5 - Radiant Intensity vs. Forward Current Document Number: 81091 Rev. 1.7, 29-Jun-09 -1 -2 -3 IFDC = 70 mA IFAC = 30 mA pp -4 -5 101 14256 102 103 104 105 f - Frequency (kHz) Fig. 8 - Attenuation vs. Frequency For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 3 TSFF5410 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero PACKAGE DIMENSIONS in millimeters C O 5.8 0.15 A < 0.7 7.7 0.15 8.7 0.3 Area not plane 34.3 0.55 11.3 0.3 (3.5) R2.49 (sphere) 1.1 0.25 1 min. O 5 0.15 + 0.15 0.5 - 0.05 + 0.15 0.5 - 0.05 technical drawings according to DIN specifications 2.54 nom. 6.544-5258.06-4 Issue: 3; 19.05.09 95 11260 www.vishay.com 4 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81091 Rev. 1.7, 29-Jun-09 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1