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IRF7811AV
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Minimizes Parallel MOSFETs for high current
applications
• 100% RG Tested
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7811AV has been optimized for all parameters
that are critical in synchronous buck converters including
RDS(on), gate charge and Cdv/dt-induced turn-on immunity .
The IRF7811AV offers an extremely low combination of
Qsw & RDS(on) for reduced losses in both control and
synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical
PCB mount application.
DEVICE CHARACTERISTICS
Top View
8
1
2
3
45
6
7
D
D
D
DG
S
A
S
S
A
IRF7811AV
SO-8
11/01/05
PD-94009B
IRF7811AV
RDS(on)
11 m
Ω
QG17 nC
Q
SW
6.7 nC
QOSS 8.1 nC
Absolute M aximum Rat ing s
Symbol Units
V
DS V
VGS
C
ontinuous Output Current
TA = 25°C
A
(VGS ≥ 4.5V) TL = 90°C IDM
TA = 25°C
TL = 90° C TJ , TSTG °C
IS
I
SM
Thermal Resistance
Symbol Typ Max Units
RθJA ––– 50
RθJL ––– 20
W
A
°C/W
Maximum Junction-to-Ambient
eh
Max imum Juncti on-to-Lead
h
P ul sed Source C urr ent
c
2.5
50
2.5
-55 t o 150
ID
PD
P ow er Di ssipat ion
e
Continuous Source Curr ent (Body Diode)
Parameter
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
P ul sed D rain Current
c
Junctio n & St orage Temperature Range 3.0
IRF7811AV
10.8
100
30
±20
11.8
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IRF7811AV
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Qoss
Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS measured at VGS =5.0V, I F = 15A.
Rθ is measured at TJ approximately 90°C
Electrical Ch ar acteristics
Parameter Symbol Min Typ Max Units
Drain-to-Source Breakdown Voltage V(BR)DSS 30 ––– ––– V
Static Drai n-to -Sour ce On- Resis tanc e RDS(on) ––– 11 14 mΩ
Gate Threshold Voltage VGS(th) 1.0 ––– 3.0 V
––– ––– 50 µA
––– ––– 20 µA
––– ––– 100 µA
Gate-to-Source Leakage Current IGSS ––– ––– ±100 nA
Total Gate Charge, Control FET Qg––– 17 26 nC
Total Gate Charge, Synch FET Qg––– 14 21 VGS = 5.0V, VDS < 100mV
Pre-Vth Gate-t o-Source Cha rge Qgs1 ––– 3.4 –––
Post-Vth Gat e-to-Source Charge Qgs2 ––– 1.6 –––
Gate-to-Drain ("Miller") Charge Qgd ––– 5.1 –––
Switch Charge (Qgs2 + Qgd)Q
SW ––– 6.7 –––
Output Charge QOSS ––– 8.1 12 VDS = 1 6V, VGS = 0
Gate Resistance RG0.5 ––– 4.4 Ω
Turn-On Delay Time td(on) ––– 8.6 ––– ns
Rise Time tr––– 21 –––
Turn-Off Delay Time td(off) ––– 43 –––
Fall Time tf––– 10 –––
I np ut Ca pa cita nce Ciss ––– 1801 ––– pF
Output Capaci tance Coss ––– 723 –––
Reverse Transfer Capacitance Crss ––– 46 –––
Diode Characteristics
Parameter Symbol Min Typ Max Units
Diode Forward Voltage VSD ––– ––– 1.3 V
Revers e Recovery Charge
(with Parallel Schottsky)
f
VDS = 24V, VGS = 0V, TJ = 100°C
VGS = 0 V
Conditions
VGS = 0V, ID = 250µA
VGS = 4.5V, ID = 15A
d
VDS = VGS, ID = 250µA
VDS = 30V, VGS = 0V
VGS = ± 20V
VDS = 24V, ID = 15A, VGS = 5.0V
VDS = 24V, VGS = 0VDrain-to-Source Leakage Current IDSS
VDS = 16V, ID = 15A
di/dt = 700A/µs , (with 10BQ 040)
VGS = 5.0V
VDD = 16V
ID = 15A
Clamped Inductive Load
di/dt = 700A/µs
VDD = 16V, VGS = 0V, ID = 1 5A
–––
VDS = 10V
Conditions
VDD = 16V, VGS = 0V, ID = 1 5A
TJ = 25°C, IS = 15A
d
,VGS = 0V
–––
Qrr
Revers e Recovery Charge
f
nC
nC–––50
Qrr ––– 43
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IRF7811AV
0 5 10 15 20
0
2
4
6
Q , Total Gate Charge (nC )
V , Gate- to-Sourc e V oltage (V)
G
GS
I =
D15A
110 100
VDS , Drain-to-Source Voltage (V)
0
500
1000
1500
2000
2500
3000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0.1
1
10
100
2.0 2.5 3.0 3.5 4.0 4.5 5.0
V = 15V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
0.1
1
10
100
0.3 0.6 0.9 1.2 1.5
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
Figure 1. Normalized On-Resistance vs. Temperature Figure 2. Gate-to-Source Voltage vs. Typical Gate Charge
Figure 3. Typical Rds(on) vs. Gate-to-Source Voltage Figure 4. Typical Capacitance vs. Drain-to-Source Voltage
Figure 5. Typical Transfer Characteristics Figure 6. Typical Source-Drain Diode Forward V oltage
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
4.5V
15A VDS = 16V
3.0 6.0 9.0 12.0 15.0
VGS, Gate -to -Source Voltage (V)
0.008
0.010
0.012
0.014
0.016
0.018
0.020
RDS(on), Drain-to -Source On Resistance (Ω)
ID = 15A
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IRF7811AV
Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.1
1
10
100
0.0001 0.001 0.01 0.1 1 10 100 1000
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Re ctangula r Pulse Duration (sec)
Thermal Response(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Figure 8. Clamped Inductive load test diagram and switching waveform
50 O hms pro b e
125nS
50 u
5 uH
Sch ottky -6A VDD
16Vz500mW
50 u
450
450
Mic4452BM
Re pe tition ra te:1 00H z
8V
Switching Ti me Waveforms
10%
90%
Vds
Vgs
td(on) tf(v)
td(off) tr(v)
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IRF7811AV
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
SO-8 Part Marking
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BA SIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BA SIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX MILLIMETERSINCHES MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BASIC 0.635 BASIC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] C A B
e1 A
A1
8X b
C
0.10 [.004]
4312
FOOTPRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA.
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOW N IN MILLIMETERS [INCHES].
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSION S NOT TO EXCEED 0.25 [ .010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
8X 1.78 [.070
]
DATE CODE (YWW)
XXXX
INTERNATIONAL
RECTIFIER
LOGO
F7101
Y = LAST DIGIT OF THE YEAR
PART NUMBER
LOT CODE
WW = WEEK
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
P = DES IGNAT E S L E AD-F REE
PROD UCT (OPTIONAL)
A = ASSE MB LY SITE CODE
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IRF7811AV
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/05
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERM INAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
N
OTES:
1
. CONTROLLING DIMENSION : MILLIMETER.
2
. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3
. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
