BSS84PW SIPMOS Small-Signal-Transistor Features Product Summary * P-Channel * Enhancement mode * Avalanche rated * Logic Level * dv/dt rated Drain source voltage VDS Drain-source on-state resistance RDS(on) Continuous drain current ID -60 V 8 W -0.15 A 3 2 * Qualified according to AEC Q101 1 * Halogen-free according to IEC61249-2-21 Marking Tape and Reel Type Package BSS84PW PG-SOT-323 H6327:3000pcs/r. YBs VSO05561 Pin 1 PIN 2 PIN 3 G S D Maximum Ratings,at T j = 25 C, unless otherwise specified Symbol Parameter Value Unit Continuous drain current -0.15 A ID T A = 25 C ID puls -0.6 Avalanche energy, single pulse EAS 2.61 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt EAR 0.03 dv/dt 6 Gate source voltage VGS 20 V Power dissipation Ptot 0.3 W -55...+150 C Pulsed drain current T A = 25 C I D = -0.15 A , V DD = -25 V, RGS = 25 W mJ kV/s I S = -0.15 A, V DS = -48 V, di/dt = 200 A/s, T jmax = 150 C T A = 25 C Operating and storage temperature Tj , Tstg 55/150/56 IEC climatic category; DIN IEC 68-1 Rev 1.4 Page 1 2011-07-13 BSS84PW Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 110 @ min. footprint - - 420 @ 6 cm 2 cooling area 1) - - 350 Characteristics Thermal resistance, junction - soldering point RthJS K/W (Pin 3) SMD version, device on PCB: RthJA Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS -60 - - Gate threshold voltage, VGS = VDS I D = -20 A VGS(th) -1 -1.5 -2 Zero gate voltage drain current IDSS Static Characteristics Drain-source breakdown voltage V VGS = 0 V, I D = -250 A A VDS = -60 V, V GS = 0 V, T j = 25 C - -0.1 -1 VDS = -60 V, V GS = 0 V, T j = 125 C - -10 -100 IGSS - -10 -100 nA RDS(on) - 10.5 25 W RDS(on) - 6.9 12 RDS(on) - 4.6 8 Gate-source leakage current VGS = -20 V, VDS = 0 V Drain-source on-state resistance VGS = -2.7 V, I D = -0.01 A Drain-source on-state resistance VGS = -4.5 V, I D = -0.12 A Drain-source on-state resistance VGS = -10 V, ID = -0.15 A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev 1.4 Page 2 2011-07-13 BSS84PW Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 0.08 0.16 - S pF Dynamic Characteristics Transconductance g fs V DS2*ID*R DS(on)max , ID=0.15A Input capacitance Ciss V GS=0V, VDS=-25V, - 15.3 19.1 Output capacitance Coss f=1MHz - 5.8 7.3 Reverse transfer capacitance Crss - 3 3.8 Turn-on delay time t d(on) - 6.7 10 Rise time tr - 16.2 24.3 Turn-off delay time t d(off) - 8.6 12.9 Fall time tf - 20.5 30.8 - 0.25 0.38 - 0.3 0.45 - 1 1.5 V(plateau) V DD=-48V, ID=-0.15A - -3.4 - IS - - - - V DD=-30V, V GS=-4.5V, ID=-0.12A, RG=25W ns Gate Charge Characteristics Gate to source charge Q gs Gate to drain charge Q gd Gate charge total Qg V DD=-48V, I D=-0.15A V DD=-48V, I D=-0.15A, nC V GS=0 to -10V Gate plateau voltage V Reverse Diode Inverse diode continuous T A=25C -0.15 A forward current Inverse diode direct current, I SM -0.6 pulsed Inverse diode forward voltage VSD V GS=0V, IF=-0.15A - -0.84 -1.12 V Reverse recovery time t rr V R=-30V, I F=l S, - 23.6 35.4 ns Reverse recovery charge Q rr diF/dt=100A/s - 11.6 17.4 nC Rev 1.4 Page 3 2011-07-13 BSS84PW Power Dissipation Drain current Ptot = f (TA) ID = f (TA ) parameter: VGS 0.32 -0.16 W A 0.24 -0.12 0.20 -0.10 0.16 -0.08 0.12 -0.06 0.08 -0.04 0.04 -0.02 0.00 0 20 10 V BSS84PW ID Ptot BSS84PW 40 60 80 100 120 C 0.00 0 160 20 40 60 80 100 120 TA TA Safe operating area Transient thermal impedance I D = f ( V DS ) ZthJA = f (tp ) parameter : D = 0 , T A = 25 C parameter : D = tp /T 1 BSS84PW -10 160 C 10 3 BSS84PW A K/W -10 0 Z thJC tp = 40.0s ID 100 s /I D -10 = -1 RD S( on V 1 ms DS ) 10 2 10 ms D = 0.50 0.20 10 1 0.10 0.05 -10 -2 0.02 single pulse DC -10 -3 -1 -10 -10 0 -10 1 V -10 2 VDS Rev 1.4 10 0 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 0.01 10 1 s 10 3 tp Page 4 2011-07-13 BSS84PW Typ. output characteristic Typ. drain-source-on-resistance I D = f (VDS); T j=25C parameter: tp = 80 s RDS(on) = f (ID ) parameter: VGS BSS84PW BSS84PW 26 Ptot = 0W A g f W VGS [V] a -2.5 e -0.28 d ID -0.24 -0.20 -0.16 b -3.0 c -3.5 d -4.0 e -4.5 f -5.0 g -6.0 a b c d 22 20 RDS(on) -0.36 18 16 14 12 c 10 -0.12 8 6 b -0.08 4 -0.04 2 a 0.00 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V e g VGS [V] = a b c d e f -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 g -6.0 0 0.00 -0.04 -0.08 -0.12 -0.16 -0.20 -0.24 A -5.0 f VDS -0.30 ID Typ. transfer characteristics I D= f ( V GS ) VDS 2 x I D x RDS(on)max Typ. forward transconductance gfs = f(ID ); Tj=25C parameter: gfs parameter: tp = 80 s -0.30 0.22 S A 0.18 gfs ID 0.16 -0.20 0.14 0.12 -0.15 0.10 0.08 -0.10 0.06 0.04 -0.05 0.02 0.00 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 Rev 1.4 V -5.0 VGS Page 5 0.00 0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 A -0.40 ID 2011-07-13 BSS84PW Drain-source on-resistance Gate threshold voltage RDS(on) = f(Tj) VGS(th) = f (Tj) parameter: ID = -0.17A, V GS = -10 V parameter: VGS = VDS , ID = -20 A -2.5 16 W 12 V GS(th) RDS(on) V max. 10 max. -1.5 typ. -1.0 min. 8 6 typ. 4 -0.5 2 0 -60 -20 20 60 100 0.0 -60 160 C Tj -20 20 60 100 180 C Tj Typ. capacitances Forward characteristics of reverse diode C = f(VDS) IF = f (VSD ) Parameter: VGS=0 V, f=1 MHz parameter: Tj , tp = 80 s 10 2 -10 0 BSS84PW A pF -10 -1 C IF Ciss 10 1 Coss Crss -10 -2 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 -5 -10 -15 -20 V -30 VDS Rev 1.4 -10 -3 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD Page 6 2011-07-13 BSS84PW Avalanche energy Typ. gate charge EAS = f (Tj) VGS = f (QGate ) parameter: ID = -0.15 A pulsed W par.: ID = -0.15 A , VDD = -25 V, R GS = 25 BSS84PW 3.0 -16 V mJ VGS E AS -12 2.0 1.5 -10 0,2 VDS max 0,8 VDS max -8 -6 1.0 -4 0.5 -2 0.0 25 45 65 85 105 125 165 C Tj 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 nC 1.5 Q Gate Drain-source breakdown voltage V(BR)DSS = f (Tj) BSS84PW -72 V(BR)DSS V -68 -66 -64 -62 -60 -58 -56 -54 -60 -20 20 60 100 C 180 Tj Rev 1.4 Page 7 2011-07-13 BSS84PW Published by Infineon Technologies AG 81726 Munich, Germany (c) 2010 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 1.4 Page 3 2011-07-13