© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 6 1Publication Order Number:
PCA9306/D
PCA9306
Dual Bidirectional I2C-bus
and SMBus Voltage-Level
Translator
The PCA9306 is a dual bidirectional I2C−bus and SMBus
voltage−level translator with an enable (EN) input.
Features
2−bit Bidirectional Translator for SDA and SCL Lines in
Mixed−Mode I2C−Bus Applications
Standard−Mode, Fast−Mode, and Fast−Mode Plus I2C−Bus and
SMBus Compatible
Less Than 1.5 ns Maximum Propagation Delay to Accommodate
Standard−Mode and Fast−Mode I2C−Bus Devices and Multiple
Masters
Allows Voltage Level Translation Between:
1.0 V Vref(1) and 1.8 V, 2.5 V, 3.3 V or 5 V Vbias(ref)(2)
1.2 V Vref(1) and 1.8 V, 2.5 V, 3.3 V or 5 V Vbias(ref)(2)
1.8 V Vref(1) and 3.3 V or 5 V Vbias(ref)(2)
2.5 V Vref(1) and 5 V Vbias(ref)(2)
3.3 V Vref(1) and 5 V Vbias(ref)(2)
Provides Bidirectional Voltage Translation With No Direction Pin
Low 3.5 W ON−State Connection Between Input and Output Ports
Provides Less Signal Distortion
Open−Drain I2C−Bus I/O Ports (SCL1, SDA1, SCL2 and SDA2)
5 V Tolerant I2C−Bus I/O Ports to Support Mixed−Mode Signal
Operation
High−Impedance SCL1, SDA1, SCL2 and SDA2 Pins for
EN = LOW
Lock−Up Free Operation
Flow Through Pinout for Ease of Printed−Circuit Board Trace
Routing
Packages Offered:
TSSOP−8, US8, UQFN8, UDFN8
ESD Performance: 4000 V Human Body Model,
400 V Machine Model
NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These are Pb−Free Devices
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
MARKING
DIAGRAMS
TSSOP−8
DT SUFFIX
CASE 948AL
AAF
YWW-
AG
1
8
1
8
AK MG
G
US8
US SUFFIX
CASE 493
18
UQFN8
MU SUFFIX
CASE 523AN AQ MG
1
AAF, AK, AQ, P = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
M = Date Code
G= Pb−Free Package
UDFN8
1.45 x 1.0
CASE 517BZ
P M
1
PCA9306
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2
Function Description
The PCA9306 is a dual bidirectional I2C−bus and SMBus
voltage−level translator with an enable (EN) input, and is
operational from 1.0 V to 3.6 V (Vref(1)) and 1.8 V to 5.5 V
(Vbias(ref)(2)).
The PCA9306 allows bidirectional voltage translations
between 1.0 V and 5 V without the use of a direction pin. The
low ON−state resistance (Ron) of the switch allows
connections to be made with minimal propagation delay.
When E N i s HIGH, the translator switch is on, and the SCL1
and SDA1 I/O are connected to the SCL2 and SDA2 I/O,
respectively, allowing bidirectional data flow between
ports. When EN is LOW, the translator switch is off, and a
high−impedance state exists between ports.
The PCA9306 is not a bus buffer that provides both level
translation and physical capacitance isolation to either side
of the bus when both sides are connected. The PCA9306
only isolates both sides when the device is disabled and
provides voltage level translation when active.
The PCA9306 can be used to run two buses, one at
400 kHz operating frequency and the other at 100 kHz
operating frequency. If the two buses are operating at
different frequencies, the 100 kHz bus must be isolated
when the 400 kHz operation of the other bus is required. If
the master is running at 400 kHz, the maximum system
operating frequency may be less than 400 kHz because of
the delays added by the translator.
As with the standard I2C−bus system, pull−up resistors are
required to provide the logic HIGH levels on the translators
bus. The PCA9306 has a standard open−collector
configuration of the I2C−bus. The size of these pull−up
resistors depends on the system, but each side of the
translator must have a pull−up resistor. The device is
designed t o work with Standard−mode, Fast−mode and Fast
mode Plus I2C−bus devices in addition to SMBus devices.
The maximum frequency is dependent on the RC time
constant, but generally supports > 2 MHz.
When the SDA1 or SDA2 port is LOW, the clamp is in the
ON−state and a low resistance connection exists between the
SDA1 and SDA2 ports. Assuming the higher voltage is on
the SDA2 port, when the SDA2 port is HIGH, the voltage on
the SDA1 port is limited to the voltage set by VREF1. When
the SDA1 port is HIGH, the SDA2 port is pulled to the drain
pull−up supply voltage (Vpu(D)) by the pull−up resistors.
This functionality allows a seamless translation between
higher and lower voltages selected by the user without the
need for directional control. The SCL1/SCL2 channel also
functions as the SDA1/SDA2 channel.
All channels have the same electrical characteristics and
there is minimal deviation from one output to another in
voltage or propagation delay. This is a benefit over discrete
transistor voltage translation solutions, since the fabrication
of the switch is symmetrical. The translator provides
excellent ESD protection to lower voltage devices, and at the
same time protects less ESD−resistant devices.
FUNCTIONAL DIAGRAM
Figure 1. Logic Diagram
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3
PIN ASSIGNMENTS
Figure 2. TSSOP−8 / US8 Pinouts Figure 3. UQFN8 Pinout (Top Thru View)
Figure 4. UDFN8 Pinout (Top Thru View)
Table 1. PIN DESCRIPTION
Pin Description
GND Ground
VREF1 Low−voltage side reference supply voltage for SCL1 and SDA1
SCL1 Serial clock, low−voltage side; connect to VREF1 through a pull−up resistor
SDA1 Serial data, low−voltage side; connect to VREF1 through a pull−up resistor
SDA2 Serial data, high−voltage side; connect to VREF2 through a pull−up resistor
SCL2 Serial clock, high−voltage side; connect to VREF2 through a pull−up resistor
VREF2 High−voltage side reference supply voltage for SCL2 and SDA2
EN Switch enable input; connect to VREF2 and pull−up through a high resistor
Table 2. FUNCTION TABLE
Input EN (Note 1) Function
Low Disconnect
High SCL1 = SCL2; SDA1 = SDA2
1. EN is controlled by the Vbias(ref)(2) logic levels and should be at least 1 V higher than Vref(1) for best translator operation.
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4
Table 3. MAXIMUM RATINGS
Symbol Parameter Value Unit
Vref(1) Reference Voltage (Note 2) −0.5 to +7.0 V
Vbias(ref)(2) Reference Bias Voltage (Note 3) −0.5 to +7.0 V
VIN Input Voltage −0.5 to +7.0 V
VI/O Input / Output Pin Voltage −0.5 to +7.0 V
ICH DC Channel Current 128 mA
IIK DC Input Diode Current VIN < GND −50 mA
TSTG Storage Temperature Range −65 to +150 °C
TLLead Temperature, 1 mm from Case for 10 Seconds TL = 260 °C
TJJunction Temperature Under Bias TJ = 150 °C
qJA Thermal Resistance (Note 2) qJA = 150 °C/W
PDPower Dissipation in Still Air at 85°C PD = 833 mW
MSL Moisture Sensitivity Level 1
FRFlammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
VESD ESD Withstand Voltage Human Body Mode (Note 3)
Machine Model (Note 4)
Charged Device Model (Note 5)
> 4000
> 400
N/A
V
ILATCHUP Latchup Performance Above VCC and Below GND at 125 °C (Note 6) ±100 mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be af fected.
2. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow.
3. Tested to EIA / JESD22−A114−A.
4. Tested to EIA / JESD22−A115−A.
5. Tested to JESD22−C101−A.
6. Tested to EIA / JESD78.
Table 4. RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
Vref(1) Reference Voltage (1) (Note 7) VREF1 0 5.5 V
Vbias(ref)(2) Reference Bias Voltage (2) (Note 7) VREF2 0 5.5 V
VI/O Input / Output Pin Voltage SCL1, SDA1, SCL2, SDA2 0 5.5 V
VI(EN) Control Pin Input Voltage EN 0 5.5 V
Isw(pass) Pass Switch Current 0 64 mA
TAOperating Free−Air Temperature −55 +125 °C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
7. V(ref)(1) Vbias(ref)(2) −1 V for best results in level shifting applications.
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Table 5. DC ELECTRICAL CHARACTERISTICS
Symbol Parameter Conditions
TA = −555C to +1255C
Unit
Min Typ
(Note 8) Max
VIK Input Clamping Voltage II = 18 mA; VI(EN) = 0 V −1.2 V
IIH High−Level Input Current VI = 5 V; VI(EN) = 0 V 5mA
Ci(EN) EN Pin Input Capacitance VI = 3 V or 0 V 7.1 pF
Ci/O(off) OFF−State I/O Pin Capacitance
SCLn, SDAn VO = 3 V or 0 V; VI(EN) = 0 V 4 6 pF
Ci/O(on) ON−State I/O Pin Capacitance
SCLn, SDAn VO = 3 V or 0 V;
VI(EN) = 3 V 9.3 12.5 pF
RON ON−State Resistance(2)(3) SCLn, SDAn VI = 0 V; IO = 64 mA
VI(EN) = 4.5 V
VI(EN) = 3 V
VI(EN) = 2.3 V
VI(EN) = 1.5 V
2.4
3.0
3.8
9.0
5.0
6.0
8.0
20
W
VI = 2.4 V; IO = 15 mA
VI(EN) = 4.5 V
VI(EN) = 3 V 4.8
46 7.5
80
VI = 1.7 V; IO = 15 mA
VI(EN) = 2.3 V 40 80
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
8. All typical values are at TA = 25°C.
9. Measured by the voltage drop between the SCL1 and SCL2, or SDA1 and SDA2 terminals at the indicated current through the switch.
ON−state resistance is determined by the lowest voltage of the two terminals.
10.Guaranteed by design.
Table 6. AC ELECTRICAL CHARACTERISTICS (Translating Down) − Values Guaranteed by Design
Symbol Parameter Test Condition Load
Condition
TA = −555C to +1255C
Unit
Min Max
SEE FIGURE 4 LOAD SWITCH AT S2 POSITION
tPLH Low−to−High Propagation De-
lay, from (input) SCL2 or
SDA2 to (output) SCL1 or
SDA1
VI(EN) = 3.3 V; VIH = 3.3 V;
VIL = 0 V; VM = 1.15 V CL = 15 pF 0 0.6 ns
CL = 30 pF 0 1.2
CL = 50 pF 0 2.0
tPHL High−to−Low Propagation De-
lay, from (input) SCL2 or
SDA2 to (output) SCL1 or
SDA1
CL = 15 pF 0 0.75
CL = 30 pF 0 1.5
CL = 50 pF 0 2.0
tPLH Low−to−High Propagation De-
lay, from (input) SCL2 or
SDA2 to (output) SCL1 or
SDA1
VI(EN) = 2.5 V; VIH = 2.5 V ;
VIL = 0 V; VM = 0.75 V CL = 15 pF 0 0.6 ns
CL = 30 pF 0 1.2
CL = 50 pF 0 2.0
tPHL High−to−Low Propagation De-
lay, from (input) SCL2 or
SDA2 to (output) SCL1 or
SDA1
CL = 15 pF 0 0.75
CL = 30 pF 0 1.5
CL = 50 pF 0 2.5
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Table 7. AC ELECTRICAL CHARACTERISTICS (Translating Up) − Values Guaranteed by Design
Symbol Parameter Test Condition Load Condition
TA =
−555C to +1255C
Unit
Min Max
SEE FIGURE 4 LOAD SWITCH AT S1 POSITION
tPLH Low−to−High Propagation De-
lay, from (input) SCL1 or
SDA1 to (output) SCL2 or
SDA2
VI(EN) = 3.3 V; VIH = 2.3 V ;
VIL = 0 V; VTT = 3.3 V;
VM = 1.15 V
RL = 300 W, CL = 15 pF 0 0.5 ns
RL = 300 W, CL = 30 pF 0 1.0
RL = 300 W, CL = 50 pF 0 1.75
tPHL High−to−Low Propagation De-
lay, from (input) SCL1 or
SDA1 to (output) SCL2 or
SDA2
RL = 300 W, CL = 15 pF 0 0.8
RL = 300 W, CL = 30 pF 0 1.65
RL = 300 W, CL = 50 pF 0 2.75
tPLH Low−to−High Propagation De-
lay, from (input) SCL1 or
SDA1 to (output) SCL2 or
SDA2
VI(EN) = 2.5 V; VIH = 1.5 V ;
VIL = 0 V; VTT = 2.5 V;
VM = 0.75 V
RL = 300 W, CL = 15 pF 0 0.5 ns
RL = 300 W, CL = 30 pF 0 1.0
RL = 300 W, CL = 50 pF 0 1.75
tPHL High−to−Low Propagation De-
lay, from (input) SCL1 or
SDA1 to (output) SCL2 or
SDA2
RL = 300 W, CL = 15 pF 0 1.0
RL = 300 W, CL = 30 pF 0 2.0
RL = 300 W, CL = 50 pF 0 3.3
A. Load Circuit B. Timing Diagram
S1 = translating up; S2 = translating down.
CL includes probe and jig capacitance.
All input pulses are supplied by generators having the following characteristics: PRR 10 MHz; Zo = 50 W; tr 2 ns; tf 2 ns.
The outputs are measured one at a time, with one transition per measurement.
Figure 5. Load Circuit for Outputs
from output under test
input
output
RL
CL
S1
S2 (open)
VTT
VIH
VIL
VOH
VOL
VM
VM
VM
VM
ORDERING INFORMATION
Device Package Shipping
PCA9306DTR2G TSSOP−8
(Pb−Free) 4000 / Tape & Reel
PCA9306AMUTCG UQFN−8
(Pb−Free) 3000 / Tape & Reel
PCA9306FMUTAG UDFN8
(Pb−Free) 3000 / Tape & Reel
PCA9306FMUTCG UDFN8
(Pb−Free) 3000 / Tape & Reel
PCA9306USG US8
(Pb−Free) 3000 / Tape & Reel
NLV9306USG*
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP
Capable.
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APPLICATION INFORMATION
1. The applied voltages at Vref(1) and Vpu(D) should be such that Vbias(ref)(2) is at least 1 V higher than Vref(1) for best translator
operation. Figure 6. Typical Application (Switch Always Enabled)
SCL1
SDA1
VREF1
GND
3
4
VREF2
1
6
5
SCL2
SDA2
8
SW
SW
PCA9306
7
200 kW
SCL
GND
2
SCL
SDA
GND
EN
I2C−Bus
MASTER I2C−Bus
DEVICE
SDA
RPU RPU
RPU RPU
VREF(1) = 1.8 V
(Note 1)
VPU(D) = 3.3 V
(Note 1)
VCC VCC
2. In the Enabled mode, the applied enable voltage and the applied voltage at Vref(1) should be such that Vbias(ref)(2) is at least 1 V
higher than Vref(1) for best translator operation.
Figure 7. Typical Application (Switch Enable Control)
SCL1
SDA1
VREF1
GND
3
4
VREF2
1
6
5
SCL2
SDA2
8
SW
SW
PCA9306
7
200 kW
SCL
SDA
GND
2
SCL
SDA
GND
VCC VCC
VREF(1) = 1.8 V
(Note 2)
VPU(D) = 3.3 V
RPU RPU
RPU RPU
3.3 V Enable Signal (Note 2)
EN
ONOFF
I2C−Bus
MASTER I2C−Bus
DEVICE
Bidirectional Translation
For the bidirectional clamping configuration (higher
voltage to lower voltage or lower voltage to higher voltage),
the EN input must be connected to VREF2 and both pins
pulled to HIGH side Vpu(D) through a pull−up resistor
(typically 200 kW). This allows VREF2 to regulate the EN
input. A filter capacitor on VREF2 is recommended. The
I2C−bus master output can be totem−pole or open−drain
(pull−up resistors may be required) and the I2C−bus device
output can be totem−pole or open−drain (pull−up resistors
are required to pull the SCL2 and SDA2 outputs to Vpu(D)).
However, if either output is totem−pole, data must be
unidirectional or the outputs must be 3−stateable and be
controlled by some direction−control mechanism to prevent
HIGH−to−LOW contentions in either direction. If both
outputs are open−drain, no direction control is needed.
The reference supply voltage (Vref(1)) is connected to the
processor core power supply voltage. When VREF2 is
connected through a 200 kW resistor to a 3.3 V to 5.5 V
Vpu(D) power supply, and Vref(1) is set between 1.0 V and
(Vpu(D) 1 V), the output of each SCL1 and SDA1 has a
maximum output voltage equal to VREF1, and the output of
each SCL2 and SDA2 has a maximum output voltage equal
to Vpu(D).
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Table 8. APPLICATION OPERATING CONDITIONS Refer to Figure 6.
Symbol Parameter Conditions Min Typ(1) Max Unit
Vbias(ref)(2) Reference Bias Voltage (2) Vref(1) + 0.6 2.1 5 V
VI(EN) EN Pin Input Voltage Vref(1) + 0.6 2.1 5 V
Vref(1) Reference Voltage (1) 0 1.5 4.4 V
Isw(pass) Pass Switch Current 14 mA
Iref Reference Current Transistor 5 mA
Tamb Ambient Temperature Operating in free−air −55 +125 °C
11.All typical values are at Tamb = 25 °C.
Sizing Pull−up Resistor
The pull−up resistor value needs to limit the current
through the pass transistor when it is in the ON state to about
15 mA. This ensures a pass voltage of 260 mV to 350 mV.
If the current through the pass transistor is higher than
15 mA, the pass voltage also is higher in the ON state. To set
the current through each pass transistor at 15 mA, the
pull−up resistor value is calculated as:
RPU +
VPU(D) *0.35 V
0.015 A (eq. 1)
The following table summarizes resistor reference
voltages and currents at 15 mA, 10 mA, and 3 mA. The
resistor values shown in the +10% column or a larger value
should be used to ensure that the pass voltage of the
transistor would be 350 mV or less. The external driver must
be able to sink the total current from the resistors on both
sides o f the PCA9306 device at 0.175 V, although the 15 mA
only applies to current flowing through the PCA9306
device.
Table 9. PULLUP RESISTOR VALUES Calculated for VOL = 0.35 V; assumes output driver VOL = 0.175 V at stated current.
Vpu(D)
Pullup Resistor Value (W)
15 mA 10 mA 3 mA
Nominal +10% (Note 12) Nominal +10%(1) Nominal +10% (Note 12)
5 V 310 341 465 512 1550 1705
3.3 V 197 217 295 325 983 1082
2.5 V 143 158 215 237 717 788
1.8 V 97 106 145 160 483 532
1.5 V 77 85 115 127 383 422
1.2 V 57 63 85 94 283 312
12.+10% to compensate for VCC range and resistor tolerance.
Maximum Frequency Calculation
The maximum frequency is totally dependent upon the
specifics of the application and the device can operate >
33 MHz. Basically, the PCA9306 behaves like a wire with
the additional characteristics of transistor device physics
and should be capable of performing at higher frequencies
if used correctly.
Here are some guidelines to follow that will help
maximize the performance of the device:
Keep trace length to a minimum by placing the
PCA9306 close to the processor.
The trace length should be less than half the time of
flight to reduce ringing and reflections.
The faster the edge of the signal, the higher the chance
for ringing.
The higher the drive strength (up to 15 mA), the higher
the frequency the device can use.
In a 3.3 V to 1.8 V direction level shift, if the 3.3 V side
is being driven by a totem pole type driver no pull−up
resistor i s needed on the 3.3 V side. The capacitance and line
length of concern is on the 1.8 V side since it is driven
through the ON resistance of the PCA9306. If the line length
on the 1.8 V side is long enough there can be a reflection at
the chip/terminating end of the wire when the transition time
is shorter than the time of flight of the wire because the
PCA9306 looks like a high−impedance compared to the
wire. If the wire is not too long and the lumped capacitance
is not excessive the signal will only be slightly degraded by
the series resistance added by passing through the PCA9306.
If the lumped capacitance is large the rise time will
deteriorate, the fall time is much less affected and if the rise
time is slowed down too much the duty cycle of the clock
will be degraded and at some point the clock will no longer
be useful. So the principle design consideration is to
minimize the wire length and the capacitance on the 1.8 V
side for the clock path. A pull−up resistor on the 1.8 V side
can also be used to trade a slower fall time for a faster rise
time and can also reduce the overshoot in some cases.
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PACKAGE DIMENSIONS
TSSOP8, 4.4x3
CASE 948AL
ISSUE O
E1 E
A2
A1
e
b
D
c
A
TOP VIEW
SIDE VIEW END VIEW
q1
L1 L
Notes:
(1) All dimensions are in millimeters. Angles in degrees.
(2) Complies with JEDEC MO-153.
SYMBOL
θ
MIN NOM MAX
A
A1
A2
b
c
D
E
E1
e
L1
L
0.05
0.80
0.19
0.09
0.50
2.90
6.30
4.30
0.65 BSC
1.00 REF
1.20
0.15
1.05
0.30
0.20
0.75
3.10
6.50
4.50
0.90
0.60
3.00
6.40
4.40
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PACKAGE DIMENSIONS
US8
CASE 493−02
ISSUE B
DIM
AMIN MAX MIN MAX
INCHES
1.90 2.10 0.075 0.083
MILLIMETERS
B2.20 2.40 0.087 0.094
C0.60 0.90 0.024 0.035
D0.17 0.25 0.007 0.010
F0.20 0.35 0.008 0.014
G0.50 BSC 0.020 BSC
H0.40 REF 0.016 REF
J0.10 0.18 0.004 0.007
K0.00 0.10 0.000 0.004
L3.00 3.20 0.118 0.126
M0 6 0 6
N5 10 5 10
P0.23 0.34 0.010 0.013
R0.23 0.33 0.009 0.013
S0.37 0.47 0.015 0.019
U0.60 0.80 0.024 0.031
V0.12 BSC 0.005 BSC
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION “A” DOES NOT INCLUDE MOLD
FLASH, PROTRUSION OR GATE BURR.
MOLD FLASH. PROTRUSION AND GATE
BURR SHALL NOT EXCEED 0.140 MM
(0.0055”) PER SIDE.
4. DIMENSION “B” DOES NOT INCLUDE
INTER−LEAD FLASH OR PROTRUSION.
INTER−LEAD FLASH AND PROTRUSION
SHALL NOT E3XCEED 0.140 (0.0055”) PER
SIDE.
5. LEAD FINISH IS SOLDER PLATING WITH
THICKNESS OF 0.0076−0.0203 MM.
(300−800 “).
6. ALL TOLERANCE UNLESS OTHERWISE
SPECIFIED ±0.0508 (0.0002 “).
LB
A
PG
41
58
C
K
D
SEATING
J
S
R
U
DETAIL E
V
F
H
NR 0.10 TYP
M
−Y−
−X−
−T−
DETAIL E
T
M
0.10 (0.004) XY
T0.10 (0.004)
____
____
PLANE
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
ǒmm
inchesǓ
SCALE 8:1
3.8
0.15
0.50
0.0197
1.0
0.0394
0.30
0.012
1.8
0.07
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PACKAGE DIMENSIONS
ÉÉ
ÉÉ
UQFN8, 1.6x1.6, 0.5P
CASE 523AN
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30 mm FROM THE TERMINAL TIP.
A
B
E
D
BOTTOM VIEW
b
e
8X
0.10 B
0.05
AC
CNOTE 3
2X
0.10 C
PIN ONE
REFERENCE
TOP VIEW
2X
0.10 C
A
A1
(A3)
0.05 C
0.05 C
CSEATING
PLANE
SIDE VIEW
L
8X
1
35
8
DIM MIN MAX
MILLIMETERS
A0.45 0.60
A1 0.00 0.05
A3 0.13 REF
b0.15 0.25
D1.60 BSC
L1 −− 0.15
E1.60 BSC
e0.50 BSC
L0.35 0.45
L1
DETAIL A
ÇÇ
ÉÉ
A1
A3
DETAIL B
OPTIONAL
MOLD CMPD
EXPOSED Cu
b
CONSTRUCTION
OPTIONAL
CONSTRUCTION
DETAIL B
DET AIL A
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
PITCH
0.35
7X
DIMENSIONS: MILLIMETERS
1
7
L3
0.25
1.70
1.70
0.50
L3 0.25 0.35
L3
(0.10) (0.15)
8X
0.53
8X
0.53
8X
PCA9306
http://onsemi.com
12
PACKAGE DIMENSIONS
ÉÉ
ÉÉ
UDFN8, 1.45x1, 0.35P
CASE 517BZ
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.20 MM FROM TERMINAL TIP.
4. PACKAGE DIMENSIONS EXCLUSIVE OF
BURRS AND MOLD FLASH.
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
RECOMMENDED
DIM MIN MAX
MILLIMETERS
A0.45 0.55
A1 0.00 0.05
A3 0.13 REF
b0.15 0.25
D1.45 BSC
E1.00 BSC
e0.35 BSC
L0.25 0.35
L1 0.30 0.40
A B
E
D
0.10 C
PIN ONE
REFERENCE
TOP VIEW
0.10 C
A
A1
0.05 C
0.05 C
CSEATING
PLANE
SIDE VIEW
2X
2X
A3
BOTTOM VIEW
b
e
8X
L7X
L1
14
58
e/2
DIMENSIONS: MILLIMETERS
0.22
7X
0.48 8X
1.18
0.53 PITCH
0.35
1
PKG
OUTLINE
0.10 B
0.05
AC
CNOTE 3
M
M
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