POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
Preliminary Data Sheet
Thyristor Modules
Thyristor/Diode Modules
Features
●International standard package
●Direct copper bonded Al2O3 -ceramic
base plate
●Planar passivated chips
●Isolation voltage 3600 V~
●UL registered, E 148688
●Keyed gate/cathode twin pins
Applications
●Motor control
●Power converter
●Heat and temperature control for
industrial furnaces and chemical
processes
●Lighting control
●Contactless switches
Advantages
●Space and weight savings
●Simple mounting with two screws
●Improved temperature and power
cycling capability
●Reduced protection circuits
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
PSKT 224
PSKH 224
PSKH
PSKT
ITRMS = 2x 400 A
ITAVM = 2x 240 A
VRRM = 2000-2200 V
3671 542
31542
VRSM VRRM Type
VDSM VDRM
VV
2100 2000 PSKT 224/20io1 PSKH 224/20io1
2300 2200 PSKT 224/22io1 PSKH 224/22io1
120
60
20
10
Symbol Test Conditions Maximum Ratings
ITRMS TVJ = TVJM A
ITAVM TC = 85°C; 180° sine A
ITSM TVJ = 45°C; t = 10 ms (50 Hz) A
VR = 0 t = 8.3 ms (60 Hz) A
TVJ = TVJM t = 10 ms (50 Hz) A
VR = 0 t = 8.3 ms (60 Hz) A
∫∫
∫∫
∫i2dt TVJ = 45°C t = 10 ms (50 Hz) A2s
VR = 0 t = 8.3 ms (60 Hz) A2s
TVJ = TVJM t = 10 ms (50 Hz) A2s
VR = 0 t = 8.3 ms (60 Hz) A2s
(di/dt)cr TVJ = TVJM repetitive, IT = 750 A 100 A/µs
f = 50 Hz, tP = 200 µs
VD = 2/3 VDRM
IG= 1 A non repetitive, IT = ITAVM 500 A/µs
diG/dt = 1 A/µs
(dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM V/µs
RGK = ∞; method 1 (linear voltage rise)
PGM TVJ = TVJM tP = 30 µs W
IT = ITAVM tP = 500 µs W
PGAV W
VRGM V
TVJ °C
TVJM °C
Tstg °C
VISOL 50/60 Hz, RMS t = 1 min V~
IISOL ≤ 1 mA t = 1 s V~
MdMounting torque (M6) Nm/lb.in.
Terminal connection torque (M8) Nm/lb.in.
Weight Typical including screws g
8000
8500
400
240
7000
7500
320000
303000
245000
240000
1000
-40 ...130
130
-40 ...125
4.5-7/40-62
11-13/97-115
750
1
2
37654
http://store.iiic.cc/
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
Optional accessories for modules
Keyed Gate/Cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type ZY 180 L (L = Left for pin pair 4/5) UL 758, style 1385,
Type ZY 180 R (R = Right for pin pair 6/7) CSA class 5851, guide 460-1-1
Fig. 1 Gate trigger characteristics
0.01 0.1 1 10
1
10
100
10-3 10-2 10-1 100101102
0.1
1
10
IG
VG
A
A
IG
1: IGT, TVJ = 140°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
µs
tgd
V
4: PGM = 20 W
5: PGM = 60 W
6: PGM = 120 W
IGD, TVJ = 140°C
4
2
1
56
Limit
typ.
TVJ = 25°C
3
0.01 0.1 1 10
1
10
100
10-3 10-2 10-1 100101102
0.1
1
10
IG
VG
A
A
IG
1: IGT, TVJ = 130°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
µs
tgd
V
4: PGM = 20 W
5: PGM = 60 W
6: PGM = 120 W
IGD, TVJ = 130°C
4
2
1
56
Limit
typ.
TVJ = 25°C
3
Fig. 2 Gate trigger delay time
Dimensions in mm (1 mm = 0.0394")
PSKT PSKH
M8x20
M8x20
600 1.4
2
3
150
220
0.139
0.069
0.179
0.089
12.7
9.6
50
40
0.8
0.76
0.25
10
150
Symbol Test Conditions Characteristic Values
IRRM, IDRM TVJ = TVJM; VR = VRRM mA
VTIT= A; TVJ = 25°C V
VT0 For power-loss calculations only (TVJ = TVJM)V
rTmΩ
VGT VD= 6 V; TVJ = 25°C V
TVJ = -40°C V
IGT VD= 6 V; TVJ = 25°C mA
TVJ = -40°C mA
VGD TVJ = TVJM;V
D = 2/3 VDRM V
IGD TVJ = TVJM;V
D = 2/3 VDRM mA
ILTVJ = 25°C; VD = 6 V; tP = 30 µs mA
diG/dt = 0.45 A/µs; IG = 0.45 A
IHTVJ = 25°C; VD = 6 V; RGK = ∞mA
tgd TVJ = 25°C; VD = 1/2 VDRM µs
diG/dt = 1 A/µs; IG = 1 A
tqTVJ = TVJM; VR = 100 V; VD = 2/3 VDRM; tP = 200 µs typ.200 µs
dv/dt = 50 V/µs; IT = 300 A; -di/dt = 10 A/µs
QSTVJ = TVJM µC
IRM -di/dt = 50 A/µs; IT = 400 A A
RthJC per thyristor; DC current K/W
per module K/W
RthJK per thyristor; DC current K/W
per module K/W
dSCreeping distance on surface m m
dACreepage distance in air m m
aMaximum allowable acceleration m/s2
200
2
760
275
http://store.iiic.cc/
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
0 25 50 75 100 125 150
0 100 200 300
0
100
200
300
400
500
0 25 50 75 100 125 150
110
104
105
106
0.001 0.01 0.1 1
0
2000
4000
6000
8000
0 200 400 600
0
500
1000
1500
2000
I2t
ITAVM
IdAVM
A
Ptot
W
TA
TC
s
t
ms
t
A2s
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
400
ITSM A
A
°C
ITAVM
W
Ptot
A°C
0.8
1
0.2
0.3
0.4
0.6
RthKA K/W
0.1
0.2
0.15
0.1
0.08
0.05
0.03
0.3
°C
3xMCC224
Circuit
B6
TA
RthKA K/W
180° sin
120°
60°
30°
DC
180° sin
120°
60°
30°
DC
VR = 0V
80 % VRRM
50 Hz
Fig. 5 Power dissipation versus on-
state current and ambient
temperature (per thyristor or
diode)
Fig. 3 Surge overload current
ITSM: Crest value, t: duration
Fig. 4 I2t versus time (1-10 ms) Fig. 4a Maximum forward current
at case temperature
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
TVJ = 45°C
TVJ = 130°C
TVJ = 45°C TVJ = 130°C
Circuit
B 6
3xPSKT 224 or
3xPSKH 224
http://store.iiic.cc/
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
t
ZthJK
s
t
10-3 10-2 10-1 100101102
0.00
0.05
0.10
0.15
0.20
0.25
0.30
K/W
ZthJC
IRMS
Ptot
0 25 50 75 100 125 1500 100 200 300 400 500
0
500
1000
1500
2000
A
3xMCC224
Circuit
W3
10-3 10-2 10-1 100101102
0.00
0.05
0.10
0.15
0.20
0.25
DC
DC
180°
120°
60°
30°
°C
TA
W
K/W
s
30°
60°
120°
180°
0.2
0.15
0.1
0.08
0.05
0.03
0.3
RthKA K/W
Fig. 9 Transient thermal impedance
junction to heatsink (per thyristor
or diode)
RthJK for various conduction angles d:
d RthJK (K/W)
DC 0.179
180° 0.188
120° 0.196
60° 0.216
30° 0.256
Constants for ZthJK calculation:
iR
thi (K/W) ti (s)
1 0.0067 0.00054
2 0.0358 0.098
3 0.0832 0.54
4 0.0129 12
5 0.04 12
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
RthJC for various conduction angles d:
d RthJC (K/W)
DC 0.139
180° 0.148
120° 0.156
60° 0.176
30° 0.214
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.0067 0.00054
2 0.0358 0.098
3 0.0832 0.54
4 0.0129 12
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
Circuit
W 3
3xPSKT 224 or
3xPSKH 224
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