BFR92AWT - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of October 1992

File under discrete semiconductors, SC14

1995 Sep 18

DISCRETE SEMICONDUCTORS

BFR92AW

NPN 5 GHz wideband transistor

1995 Sep 18 2

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR92AW

FEATURES

•High power gain

•Gold metallization ensures

excellent reliability

•SOT323 (S-mini) package.

APPLICATIONS

It is designed for use in RF amplifiers,

mixers and oscillators with signal

frequencies up to 1 GHz.

DESCRIPTION

Silicon NPN transistor encapsulated

in a plastic SOT323 (S-mini) package.

The BFR92AW uses the same crystal

as the SOT23 version, BFR92A.

PINNING

PIN DESCRIPTION

1 base

2 emitter

3 collector

Marking code: P2.

Fig.1 SOT323

handbook, 2 columns

MBC870

Top view

QUICK REFERENCE DATA

Note

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VCBO collector-base voltage open emitter −−20 V

VCEO collector-emitter voltage open base −−15 V

ICcollector current (DC) −−25 mA

Ptot total power dissipation up to Ts=93°C; note 1 −−300 mW

hFE current gain IC= 15 mA; VCE =10V 40 90 −

re feedback capacitance IC= 0; VCE = 10 V; f = 1 MHz;

Tamb =25°C−0.35 −pF

fTtransition frequency IC= 15 mA; VCE = 10 V; f = 500 MHz 3.5 5 −GHz

GUM maximum unilateral power

gain IC= 15 mA; VCE = 10 V; f = 1 GHz;

Tamb =25°C−14 −dB

IC= 15 mA; VCE = 10 V; f = 2 GHz;

Tamb =25°C−8−dB

F noise ﬁgure IC= 5 mA; VCE = 10 V; f = 1 GHz;

Γs=Γopt

−2−dB

Tjjunction temperature −−150 °C

1995 Sep 18 3

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR92AW

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

THERMAL CHARACTERISTICS

Note to the Limiting values and Thermal characteristics

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −20 V

VCEO collector-emitter voltage open base −15 V

VEBO emitter-base voltage open collector −2V

Ccollector current (DC) −25 mA

Ptot total power dissipation up to Ts=93°C; see Fig.2; note 1 −300 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-s thermal resistance from junction to

soldering point up to Ts=93°C; note 1 190 K/W

Fig.2 Power derating curve

0 50 100 200

200

MLB540

150T ( C)

Ptot

(mW)

300

400

100

1995 Sep 18 4

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR92AW

CHARACTERISTICS

Tj=25°C (unless otherwise speciﬁed).

Note

1. GUM is the maximum unilateral power gain, assuming s12 is zero and

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector leakage current IE= 0; VCB =10V −−50 nA

hFE DC current gain IC= 15 mA; VCE = 10 V 40 90 −

Cccollector capacitance IE=i

e= 0; VCB = 10 V; f = 1 MHz −0.6 −pF

Ceemitter capacitance IC=i

c= 0; VEB = 0.5 V; f = 1 MHz −0.9 −pF

Cre feedback capacitance IC= 0; VCE = 10 V; f = 1 MHz −0.35 −pF

fTtransition frequency IC= 15 mA; VCE = 10 V; f = 500 MHz 3.5 5 −GHz

GUM maximum unilateral power

gain; note 1 IC= 15 mA; VCE =10V;

f = 1 GHz; Tamb =25°C−14 −dB

IC= 15 mA; VCE =10V;

f = 2 GHz; Tamb =25°C−8−dB

F noise ﬁgure IC= 5 mA; VCE =10V;

f = 1 GHz; Γs=Γopt

−2−dB

IC= 5 mA; VCE =10V;

f = 2 GHz; Γs=Γopt

−3−dB

GUM 10 s21 2

11 2

–()1s

22 2

–()

------------------------------------------------------------ dB.log=

1995 Sep 18 5

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR92AW

Fig.3 DC current gain as a function of collector

current; typical values.

VCE =10V.

handbook, halfpage

0102030

120

MCD074

hFE

I (mA)

Fig.4 Feedback capacitance as a function of

collector-base voltage; typical values.

IC= 0; f = 1 MHz.

1.0

020

MGC883

48 V (V)

Cre

(pF)

0.8

0.6

0.4

0.2

12 16

Fig.5 Transition frequency as a function of

collector current; typical values.

VCE = 5 V; f = 500 MHz; Tamb =25°C.

handbook, halfpage

MGC884

101

(GHz)

I (mA)

C102

1995 Sep 18 6

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR92AW

Fig.6 Gain as a function of collector current;

typical values.

VCE = 10 V; f = 500 MHz.

handbook, halfpage

0510

MGC885

15 20

gain

(dB)

I (mA)

MSG

GUM

Fig.7 Gain as a function of collector current;

typical values.

VCE = 10 V; f = 1 GHz.

handbook, halfpage

0510

MGC886

15 20

gain

(dB)

I (mA)

MSG

GUM

Fig.8 Gain as a function of frequency;

typical values.

VCE =10V;I

C= 5 mA.

handbook, halfpage

010

MGC887

102103104

gain

(dB)

f (MHz)

GUM

Gmax

MSG

Fig.9 Gain as a function of frequency;

typical values.

VCE =10V;I

C=15mA.

handbook, halfpage

010

MGC888

102103104

gain

(dB)

f (MHz)

GUM

Gmax

MSG

1995 Sep 18 7

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR92AW

Fig.10 Minimum noise figure as a function of

collector current; typical values.

VCE =10V.

handbook, halfpage

MGC889

101

(dB)

I (mA)

f = 2 GHz

500 MHz

1 GHz

102

Fig.11 Minimum noise figure as a function of

frequency; typical values.

VCE =10V.

handbook, halfpage

MGC890

103

102

(dB)

f (MHz)

IC = 15 mA

5 mA

10 mA

104

Fig.12 Common emitter noise figure circles; typical values.

f = 500 MHz; VCE = 10 V; IC= 5 mA; Zo=50Ω.

handbook, full pagewidth

MGC891

00o

0.2

0.6

0.4

0.8

1.0

45o

90o

135o

45o

90o

135o

0.5

2 5

180o

0.5

0.50.2

0.2

F = 2 dB

opt

F = 1.6 dB

min

F = 4 dB

F = 3 dB

1995 Sep 18 8

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR92AW

Fig.13 Common emitter noise figure circles; typical values.

f = 1 GHz; VCE = 10 V; IC= 5 mA; Zo=50Ω.

handbook, full pagewidth

MGC892

00o

0.2

0.6

0.4

0.8

1.0

45o

90o

135o

45o

90o

135o

0.5

21 5

180o

0.5

0.2

0.5

0.2

(4)

(3)

(2)

(1)

(6)

(5)

(7)

(8)

(1) Γopt; Fmin = 2.1 dB.

(2) F = 2.5 dB.

(3) F = 3 dB.

(4) F = 4 dB.

(5) Γms;G

max = 15.7 dB.

(6) G = 15 dB.

(7) G = 14 dB.

(8) G = 13 dB.

Fig.14 Common emitter noise figure circles; typical values.

f = 2 GHz; VCE = 10 V; IC= 5 mA; Zo=50Ω.

handbook, full pagewidth

MGC893

00o

0.2

0.6

0.4

0.8

1.0

45o

90o

135o

45o

90o

135o

0.5

21 5

180o

0.5

0.2

(3)

(2)

(1)

(5)

(4)

(6)

(7)

(8)

(1) Γopt; Fmin = 3 dB.

(2) F = 3.5 dB.

(3) F = 4 dB.

(4) F = 5 dB.

(5) Γms;G

max = 9.1 dB.

(6) G = 8 dB.

(7) G = 7 dB.

(8) G = 6 dB.

1995 Sep 18 9

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR92AW

Fig.15 Common emitter input reflection coefficient (s11); typical values.

VCE = 10 V; IC= 15 mA; Zo=50Ω.

handbook, full pagewidth

MGC894

00o

0.2

0.6

0.4

0.8

1.0

45o

90o

135o

45o

90o

135o

0.5

0.2

0.5

0.2

180 0.2 1

00.5

40 MHz

3 GHz

Fig.16 Common emitter forward transmission coefficient (s21); typical values.

VCE = 10 V; IC=15mA.

handbook, full pagewidth

MGC895

90o

135o

180o

90o

50 40 30 20 10

45o

135o45o

40 MHz 3 GHz

1995 Sep 18 10

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR92AW

Fig.17 Common emitter reverse transmission coefficient (s12); typical values.

VCE = 10 V; IC=15mA.

handbook, full pagewidth

MGC896

90o

135o

180o

90o

0.25 0.20 0.15 0.10 0.05

45o

135o45o

40 MHz

3 GHz

Fig.18 Common emitter output reflection coefficient (s22); typical values.

VCE = 10 V; IC= 15 mA; Zo=50Ω.

handbook, full pagewidth

MGC897

00o

0.2

0.6

0.4

0.8

1.0

45o

90o

135o

180o

45o

90o

135o

0.5

0.2

0.5

0.2 0.5 2

40 MHz

3 GHz

0.2

1 5

1995 Sep 18 11

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR92AW

PACKAGE OUTLINE

Fig.19 SOT323.

Dimensions in mm.

handbook, full pagewidth

0.25

0.10

0.2

0.2 A

0.65

1.3

2.2

1.8

0.40

0.30

1.35

1.15

2.2

2.0

detail X

1.1

max

0.1

0.0

1.0

0.8

0.3

0.1

0.2

MBC871

1995 Sep 18 12

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR92AW

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data sheet status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Short-form speciﬁcation The data in this speciﬁcation is extracted from a full data sheet with the same type

number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.