PTFA192001E V4-T350 - INFINEON TECHNOLOGIES AG

PTFA192001E

PTFA192001F

Confidential, Limited Internal Distribution

Data Sheet 1 of 11 Rev. 08, 2017-07-19

All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Description

The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs

intended for single- and two-carrier WCDMA and CDMA applications

from 1930 to 1990 MHz. Features include input and output matching,

and thermally-enhanced packages with slotted or earless flanges.

Manufactured with Infineon's advanced LDMOS process, these

devices provide excellent thermal performance and superior reliability.

PTFA192001E

Package H-36260-2

Thermally-Enhanced High Power RF LDMOS FETs

200 W, 1930 – 1990 MHz

2-Carrier WCDMA Drive-up

VDD = 30 V, IDQ = 1600 mA, ƒ = 1960 MHz, 3GPP

WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing

-55

-50

-45

-40

-35

-30

-25

34 36 38 40 42 44 46 48

Output Power, avg. (dBm)

IM3 (dBc), ACPR (dBc)

Drain Efficiency (%)

ACPR

Efficiency

IM3

PTFA192001F

Package H-37260-2

Features

•Pb-free, RoHS-compliant and thermally-enhanced

packages

•Broadband internal matching

•Typical two-carrier WCDMA performance at 1990

MHz, 30 V

- Average output power = 47.0 dBm

- Linear Gain = 15.9 dB

- Efficiency = 27%

- Intermodulation distortion = –36 dBc

- Adjacent channel power = –41 dBc

•Typical single-carrier WCDMA performance at 1960

MHz, 30 V, 3GPP signal, P/AR = 7.5 dB

- Average output power = 48.5 dBm

- Linear Gain = 15.9 dB

- Efficiency = 34%

- Intermodulation distortion = –37 dBc

- Adjacent channel power = –40 dBc

•Typical CW performance, 1960 MHz, 30 V

- Output power at P–1dB = 240 W

- Efficiency = 57%

•Integrated ESD protection: Human Body Model,

Class 2 (minimum)

•Excellent thermal stability, low HCI drift

•Capable of handling 5:1 VSWR @ 30 V, 200 W

(CW) output power

*See Infineon distributor for future availability.

discontinued product

Data Sheet 2 of 11 Rev. 08, 2017-07-19

PTFA192001E

PTFA192001F

Confidential, Limited Internal Distribution

RF Characteristics

WCDMA Measurements (tested in Infineon test fixture)

VDD = 30 V, IDQ = 1.8 A, POUT = 50 W average

ƒ1 = 1985 MHz, ƒ2 = 1995 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF

Characteristic Symbol Min Typ Max Unit

Gain Gps 15.3 15.9 —dB

Drain Efficiency ηD26.5 27 —%

Intermodulation Distortion IMD —–36 –34 dBc

Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)

VDD = 30 V, IDQ = 1.6 A, POUT = 200 W PEP, ƒ = 1960 MHz, tone spacing = 1 MHz

Characteristic Symbol Min Typ Max Unit

Gain Gps —15.9 —dB

Drain Efficiency ηD—41 —%

Intermodulation Distortion IMD —–30 —dBc

DC Characteristics

Characteristic Conditions Symbol Min Typ Max Unit

Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V

Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA

Drain Leakage Current VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA

On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) —0.05 —Ω

Operating Gate Voltage VDS = 30 V, IDQ = 1.8 A VGS 2.0 2.5 3.0 V

Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA

Maximum Ratings

Parameter Symbol Value Unit

Drain-Source Voltage VDSS 65 V

Gate-Source Voltage VGS –0.5 to +12 V

Junction Temperature TJ200 °C

Total Device Dissipation PD625 W

Above 25°C derate by 3.57 W/°C

Storage Temperature Range TSTG –40 to +150 °C

Thermal Resistance (TCASE = 70°C, 200 W CW) RθJC 0.28 °C/W

discontinued product

Data Sheet 3 of 11 Rev. 08, 2017-07-19

PTFA192001E

PTFA192001F

Confidential, Limited Internal Distribution

Intermodulation Distortion Products v. Output Power

VDD = 30 V, IDQ = 1600 mA,

ƒ1 = 1957.5 MHz, ƒ2 = 1962.5 MHz

-60

-50

-40

-30

-20

10 100 1000

Output Power, PEP (W)

IM5

IM7

Intermodulation Distortion (dBc)

IM3

Low

Broadband Performance

VDD = 30 V, IDQ = 1600 mA, POUT = 50 W

1860 1890 1920 1950 1980 2010 2040

Frequency (MHz)

Gain (dB), Efficiency (%)

-35

-30

-25

-20

-15

-10

-5

Input Return Loss (dB)

Gain

Efficiency

Return Loss

*See Infineon distributor for future availability.

Ordering Information

Type and Version Package Type Package Description Marking

PTFA192001E V4 H-36260-2 Thermally-enhanced slotted flange, single-ended PTFA192001E

PTFA192001F V4 H-37260-2 Thermally-enhanced earless flange, single-ended PTFA192001F

Typical Performance (data taken in a production test fixture)

discontinued product

Data Sheet 4 of 11 Rev. 08, 2017-07-19

PTFA192001E

PTFA192001F

Confidential, Limited Internal Distribution

Two-carrier WCDMA at Selected Biases

VDD = 30 V, ƒ = 1960 MHz, 3GPP WCDMA signal,

P/AR = 8 dB, 10 MHz carrier spacing, series show IDQ

-55

-50

-45

-40

-35

-30

34 36 38 40 42 44 46

Output Power, PEP (dBm)

3rd Order IMD (dBc)

1.6 A

1.4 A

2.0 A

1.8 A

2.2 A

Typical Performance (cont.)

2-Tone Drive-up

VDD = 30 V, IDQ = 1600 mA,

ƒ = 1960 MHz, tone spacing = 1 MHz

-60

-55

-50

-45

-40

-35

-30

-25

42 44 46 48 50 52 54 56

Output Power, PEP (dBm)

Drain Efficiency (%)

IM5

Efficiency

IM7

Intermodulation Distortion (dBc)

IM3

Power Sweep, CW Conditions

VDD = 30 V, IDQ = 1800 mA, ƒ = 1990 MHz

040 80 120 160 200 240

Output Power (W)

Gain (dB)

Drain Efficiency (%)

Gain

Efficiency

TCASE = 25°C

TCASE = 90°C

Intermodulation Distortion Products

vs. Tone Spacing

VDD = 30 V IDQ = 1800 mA , ƒ = 1960 MHz,

POUT = 53 dBm PEP

-55

-50

-45

-40

-35

-30

-25

-20

0 5 10 15 20 25 30 35 40

Tone Spacing (MHz)

Intermodulation Distortion (dBc)

3rd Order

5th

7th

discontinued product

Data Sheet 5 of 11 Rev. 08, 2017-07-19

PTFA192001E

PTFA192001F

Confidential, Limited Internal Distribution

Typical Performance (cont.)

Output Peak-to-Average Ratio Compression

(PARC) at various Power levels

VDD = 30 V, IDQ = 1500 mA, ƒ = 1990 MHz,

single-carrier WCDMA input PAR = 7.5 dB

0.001

0.01

0.1

100

1 2 3 4 5 6 7 8

Peak-to-Average (dB)

Probability (%)

52 dBm

50.5 dBm

50 dBm

48 dBm

46 dBm

Input

Power Gain vs. Power Sweep (CW) over

Temperature

VDD = 30 V, IDQ = 1500 mA, ƒ = 1990 MHz

110 100 1000

Output Power (W)

Power Gain (dB)

-15C

25C

85C

Voltage Sweep

IDQ = 1800 mA, ƒ = 1960 MHz, tone spacing = 1 MHz,

Output Power (PEP) = 53 dBm

-50

-40

-30

-20

-10

23 25 27 29 31 33

Supply Voltage (V)

3rd Order Intermodulation

Distortion (dBc)

Gain

Efficiency

IM3 Up

Gain (dB), Drain Efficiency (%)

Bias Voltage vs. Temperature

Voltage normalized to typical gate voltage,

series show current

0.95

0.96

0.97

0.98

0.99

1.00

1.01

1.02

1.03

-20 0 20 40 60 80 100

Case Temperature (°C)

Normalized Bias Voltage (V)

0.44 A

1.32 A

2.20 A

3.30 A

6.61 A

9.91 A

13.22 A

16.52 A

discontinued product

Data Sheet 7 of 11 Rev. 08, 2017-07-19

PTFA192001E

PTFA192001F

Confidential, Limited Internal Distribution

Reference Circuit

Reference circuit schematic for ƒ = 1960 MHz

Circuit Assembly Information

DUT PTFA192001E or PTFA192001F LDMOS Transistor

PCB 0.76 mm [.030"] thick, εr = 3.48 Rogers RO4350 1 oz. copper

Microstrip Electrical Characteristics at 1960 MHz1Dimensions: L x W ( mm) Dimensions: L x W (in.)

l10.038 λ, 50.0 Ω3.51 x 1.70 0.138 x 0.067

l20.071 λ, 50.0 Ω6.60 x 1.70 0.260 x 0.067

l30.022 λ, 43.0 Ω2.01 x 2.16 0.079 x 0.085

l4 (taper) 0.060 λ, 43.0 Ω / 6.9 Ω5.28 x 2.16 / 20.32 0.208 x 0.085 / 0.800

l50.040 λ, 6.9 Ω3.33 x 20.32 0.131 x 0.800

l60.026 λ, 6.9 Ω2.21 x 20.32 0.087 x 0.800

l7, l80.123 λ, 60.0 Ω11.48 x 1.24 0.452 x 0.049

l9, l10 0.258 λ, 50.9 Ω23.88 x 1.65 0.940 x 0.065

l11 0.067 λ, 5.0 Ω5.59 x 28.91 0.220 x 1.138

l12 (taper) 0.017 λ, 5.0 Ω / 7.2 Ω1.42 x 28.91 / 19.51 0.056 x 1.138 / 0.768

l13 (taper) 0.024 λ, 7.2 Ω / 12.3 Ω2.08 x 19.51 / 10.67 0.082 x 0.768 / 0.420

l14 (taper) 0.019 λ, 12.3 Ω / 41 Ω1.78 x 10.67 / 2.29 0.070 x 0.420 / 0.090

l15 0.009 λ, 41.0 Ω0.79 x 2.29 0.031 x 0.090

l16 0.021 λ, 41.0 Ω1.85 x 2.29 0.073 x 0.090

l17 0.096 λ, 50.0 Ω8.99 x 1.70 0.354 x 0.067

1Electrical characteristics are rounded.

a 1 9 2 00 1 e f_sch

RF_OUT

RF_IN

10pF

DUT

4.7µF

16V

0.1µF

10pF

C24

0.7pF

C23

0.7pF C28

10pF

C17

10pF

C19

1µF

C18

1µF

C22

10µF

50V

C20

2.2µF

C21

0.1µF

C26

0.7pF

C25

0.7pF

C27

0.7pF

C11

10pF

C13

1µF

C12

1µF

C16

10µF

50V

C14

2.2µF

C15

0.1µF

l2l3l6l5

4.7µF

16V

0.1µF

C10

10pF

5.1K V

l11 l12 l13 l14 l15 l16 l17

l10

VDD

2K V

0.001µF

BCP56

1.3K V

1.2K V

0.001µFQQ1

LM7805

5.1K V

discontinued product

Data Sheet 8 of 11 Rev. 08, 2017-07-19

PTFA192001E

PTFA192001F

Confidential, Limited Internal Distribution

Reference Circuit (cont.)

Reference circuit assembly diagram* (not to scale)

Component Description Suggested Manufacturer P/N or Comment

C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND

C4, C8 Capacitor, 4.7 µF, 16 VDigi-Key PCS3475CT-ND

C5, C9, C15, C21 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND

C6, C10 Ceramic capacitor, 10 pF ATC 100A 100

C7, C28 Ceramic capacitor, 10 pF ATC 100B 100

C11, C17 Capacitor, 10 pF AVX 08051J100GBTTR

C12, C13, C18, C19 Ceramic capacitor, 1 µF Digi-Key 445-1411-1-ND

C14, C20 Capacitor, 2.2 µF Digi-Key 445-1447-2-ND

C16, C22 Tantalum capacitor, 10 µF, 50 V Garrett Electronics TPSE106K050R0400

C23, C24, C25, Capacitor, 0.7 pF AVX 08051J0R7BBTTR

C26, C27

L1, L2 Ferrite, 8.9 mm Elna Magnetics BDS 4.6/3/8.9-4S2

Q1 Transistor Infineon Technologies BCP56

QQ1 Voltage regulator National Semiconductor LM7805

R1 Chip resistor 1.2 k-ohms Digi-Key P1.2KGCT-ND

R2 Chip resistor 1.3 k-ohms Digi-Key P1.3KGCT-ND

R3, R5 Chip resistor 2 k-ohms Digi-Key P2KECT-ND

R6, R7 Chip resistor 5.1 k-ohms Digi-Key P5.1KECT-ND

R8 Potentiometer 2 k-ohms Digi-Key 3224W-202ETR-ND

a192001ef_assy

RF_IN RF_OUT

VDD

C15

C12

C21

C28

C13

C14

C19

C18

C20

C9 C10

C5 C6

C11

C17

C27

C26

C24

C25

C23

A192001in_01

RO4350_.030

A192001out_01

C22

QQ1 Q1

RO4350_.030

C16

VDD

*Gerber files for this circuit available on request

discontinued product

Data Sheet 9 of 11 Rev. 08, 2017-07-19

PTFA192001E

PTFA192001F

Confidential, Limited Internal Distribution

Package Outline Specifications

Package H-36260-2

Diagram Notes—unless otherwise specified:

1. Interpret dimensions and tolerances per ASME Y14.5M-1994.

2. Pins: D = drain, S = source, G = gate.

3. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].

4. Gold plating thickness:

S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch]

5. All tolerances ± 0.127 [.005] unless specified otherwise.

6. Primary dimensions are mm. Alternate dimensions are inches.

Find the latest and most complete information about products and packaging at the Infineon Internet page

http://www.infineon.com/rfpower

h-36+37260-2_36260 / 04-25-08

0.0381 [.0015] -A-

22.35±0.23

[.880±.009]

4.83±0.50

[.190±.020]

2X 12.70

[.500]

23.37±0.51

[.920±.020]

4X R 1.52

[R.060]

34.04

[1.340]

FLANGE 13.72

[.540]

45° X 2.03

[.080]

SPH 1.57

[.062]

2X R1.63

[R.064]

4.11±0.38

[.162±.015]

27.94

[1.100]

1.02

[.040]

+0.10

LID 13.21 –0.15

+.004

[.520 ]

–.006

discontinued product

Data Sheet 10 of 11 Rev. 08, 2017-07-19

PTFA192001E

PTFA192001F

Confidential, Limited Internal Distribution

Package Outline Specifications (cont.)

Package H-37260-2

Diagram Notes—unless otherwise specified:

1. Interpret dimensions and tolerances per ASME Y14.5M-1994.

2. Pins: D = drain, S = source, G = gate.

3. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].

4. Gold plating thickness:

S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch]

5. All tolerances ± 0.127 [.005] unless specified otherwise.

6. Primary dimensions are mm. Alternate dimensions are inches.

Find the latest and most complete information about products and packaging at the Infineon Internet page

http://www.infineon.com/rfpower

+0.10

LID 13.21 –0.15

+.004

[.520 ]

–.006

h-36+37260-2_37260 / 04-25-08

SPH 1.57

[.062]

23.37±0.51

[.920±.020]

2X 12.70

[.500]

45° X 2.031

[.080]

-A-

4.11±0.38

[.162±.015]

LID 22.35±0.23

[.880±.009]

FLANGE 23.11

[.910]

13.72

[.540]

4.83±0.50

[.190±.020]

0.0381 [.0015]

+0.381

4X R0.508 –0.127

+.015

[R.020 ]

–.005

1.02

[.040]

discontinued product

Data Sheet 11 of 11 Rev. 08, 2017-07-19

PTFA192001E/F

Confidential, Limited Internal Distribution

Revision History: 2017-07-19 Data Sheet

Previous Version: 2015-03-04, Data Sheet

Page Subjects (major changes since last revision)

All Product discontinued

GOLDMOS® is a registered trademark of Infineon Technologies AG.

Edition 2017-07-19

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or

characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any

information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and

liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any

third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest

Infineon Technologies Office (www.infineon.com/rfpower).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in

question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with the express written

approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of

that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices

or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect

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discontinued product