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2001
MOS FIELD EFFECT TRANSISTOR
2SK3503
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DATA SHEET
Document No. D15395EJ2V0DS00 (2nd edition)
Date Published November 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
DESCRIPTION
The 2SK3503 is an N-channel vertical MOS FET. Because it can be
driven by a voltage as low as 1.5 V and it is not necessary to consider
a drive current, this FET is ideal as an actuator for low-current portable
systems such as headphone stereos and video cameras.
FEATURES
• Automatic mounting supported
• Gate can be driven by a 1.5 V power source
• Because of its high input impedance, there’s no need to
consider a drive current
• Since bias resistance can be omitted, the number of
components required can be reduced
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3503 SC-75 (USM)
Marking: E1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 16 V
Gate to Source Voltage (VDS = 0 V) VGSS ±7.0 V
Drain Current (DC) (Tc = 25°C) ID(DC) ±0.1 A
Drain Current (pulse) Note1 ID(pulse) ±0.4 A
Total Power Dissipation (TC = 25°C) Note2 PT 200 mW
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10
µ
s, Duty Cycle ≤ 1%
2. Mounted on ceramic substrate of 3.0 cm2 × 0.64 mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
0.3
1.6 ± 0.1
0.8 ± 0.1
2
0.2
+0.1
–0
0.5
1: Source
2: Gate
3: Drain
0.5
1.0
1.6 ± 0.1
3
1
0.6
0.75 ± 0.05
0 to 0.1
0.15
+0.1
–0.05
+0.1
–0
Data Sheet D15395EJ2V0DS
2
2SK3503
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V 1.0
µ
A
Gate Leakage Current IGSS VGS = ±7.0 V, VDS = 0 V ±3.0
µ
A
Gate Cut-off Voltage VGS(off) VDS = 3.0 V, ID = 10
µ
A 0.5 0.8 1.1 V
Forward Transfer Admittance Note | yfs | VDS = 3.0 V, ID = 10 mA 20 mS
Drain to Source On-state Resistance Note RDS(on)1 VGS = 1.5 V, ID = 1.0 mA 20 50 Ω
RDS(on)2 VGS = 2.5 V, ID = 10 mA 7.0 15 Ω
RDS(on)3 VGS = 4.0 V, ID = 10 mA 5.0 12 Ω
Input Capacitance Ciss VGS = 0 V 10 pF
Output Capacitance Coss VDS = 3.0 V 13 pF
Reverse Transfer Capacitance Crss f = 1 MHz 3.0 pF
Turn-on Delay Time td(on) VDD = 3.0 V, ID = 10 mA 15 ns
Rise Time tr VGS = 3.0 V 70 ns
Turn-off Delay Time td(off) RG = 10 Ω 100 ns
Fall Time tf 110 ns
Note Pulsed
TEST CIRCUIT SWITCHING TIME
PG. RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
µ
Duty Cycle ≤ 1%
V
GS
Wave Form
I
D
Wave Form
V
GS
10%
90%
V
GS
10%
0
I
D
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
τ
I
D
0
t
on
t
off
Data Sheet D15395EJ2V0DS 3
2SK3503
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
- Total Power Dissipation - mW
T
A
- Ambient Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
I
D
- Drain Current - mA
V
DS
- Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
|y
fs
| - Forward Transfer Admittance - mS
5
I
D
- Drain Current - mA
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance - Ω
I
D
- Drain Current - mA
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance - Ω
I
D
- Drain Current - mA
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance - Ω
I
D
- Drain Current - mA
30
240
0 60 90 120 150 1
50
40
30
20
10
0 2345
2.0 V
1.8 V
1.6 V
1.4 V
V
GS
= 1.2 V
500 V
DS
= 3.0 V
Pulsed
10 10 20 50 200
T
A
= –25˚C
200
100
50
20
100
25˚C
75˚C
0.5
200
5
12 5 20
100
50
20
10
10 50 100 200 500
T
A
= –25˚C
Pulsed
V
GS
= 1.5 V
2.5 V
4.0 V
0.5
200
5
12 5 20
100
50
20
10
10 50 100 200 500
V
GS
= 1.5 V
2.5 V
4.0 V
0.5
200
5
12 5 20
100
50
20
10
10 50 100 200 500
T
A
= 75˚C
V
GS
= 1.5 V
2.5 V
4.0 V
Pulsed
T
A
= 25˚C
Pulsed
T
A
= 75˚C
Pulsed
200
160
120
80
40
180 210
Mounted on ceramic substrate
of 3.0 cm2 x 0.64 mm
Data Sheet D15395EJ2V0DS
4
2SK3503
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - Ω
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - Ω
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - Ω
VGS - Gate to Source Voltage - V
SOURCE TO DRAIN DIODE FORWARD
VOLTAGE
ISD - Diode Forward Current - mA
VSD - Source to Drain Voltage - V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
Ciss, Crss, Coss, - Capacitance - pF
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
td(on), tr, td(off), tf - Switching Time - ns
ID - Drain Current - mA
1
30
0 234 7
20
10
65
TA = – 25˚C
Pulsed
ID = 10 mA
1 mA
1
30
0 234 7
20
10
65
ID = 10 mA
1 mA
1
30
0 234 7
20
10
65
ID = 10 mA
1 mA
200
0 1.0
100
50
20
10
5
2
1
0.80.60.40.2
1
50
0.5 2 5 10 50
10
5
20
VGS = 0 V
f = 1 MHz
20
2
1
Coss
Ciss
Crss
20
500
10 50 100 500
200
50
200
VDD = 3.0 V
VGS = 3.0 V
RG = 10 Ω
100
20
tr
tf
td(on)
td(off)
TA = 25˚C
Pulsed
TA = 75˚C
Pulsed
VGS = 0 V
Pulsed
2SK3503
The information in this document is current as of November, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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•
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