IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) * Isolated Package 900 RDS(on) () VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration * High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 * Sink to Lead Creepage Distance = 4.8 mm RoHS* COMPLIANT * Dynamic dV/dt Rating * Low Thermal Resistance Single * Lead (Pb)-free Available D TO-220 FULLPAK Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. G S G D S N-Channel MOSFET ORDERING INFORMATION Package TO-220 FULLPAK IRFIBF30GPbF SiHFIBF30G-E3 IRFIBF30G SiHFIBF30G Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current SYMBOL VDS VGS VGS at 10 V TC = 25 C TC = 100 C Currenta Pulsed Drain Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque ID IDM TC = 25 C for 10 s 6-32 or M3 screw EAS IAR EAR PD dV/dt TJ, Tstg LIMIT 900 20 1.9 1.2 7.6 0.28 220 1.9 3.5 35 1.5 - 55 to + 150 300d 10 1.1 UNIT V A W/C mJ A mJ W V/ns C lbf * in N*m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 C, L = 115 mH, RG = 25 , IAS = 1.9 A (see fig. 12). c. ISD 3.6 A, dI/dt 70 A/s, VDD 600, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91186 S09-0063-Rev. A, 02-Feb-09 www.vishay.com 1 IRFIBF30G, SiHFIBF30G Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 65 Maximum Junction-to-Case (Drain) RthJC - 3.6 UNIT C/W SPECIFICATIONS TJ = 25 C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0 V, ID = 250 A 900 - - V VDS/TJ Reference to 25 C, ID = 1 mA - 1.1 - V/C VGS(th) VDS = VGS, ID = 250 A 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = 20 V - - 100 nA Zero Gate Voltage Drain Current IDSS VDS = 900 V, VGS = 0 V - - 100 VDS = 720 V, VGS = 0 V, TJ = 125 C - - 500 - - 3.7 1.7 - - S Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs ID = 1.1 Ab VGS = 10 V VDS = 50 V, ID = 1.1 Ab A Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Drain to Sink Capacitance VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 C Total Gate Charge Qg Gate-Source Charge Qgs f = 1.0 MHz VGS = 10 V ID = 3.6 A, VDS = 360 V, see fig. 6 and 13b - 1200 - - 320 - - 200 - - 12 - - - 78 - - 10 pF nC Gate-Drain Charge Qgd - - 42 Turn-On Delay Time td(on) - 14 - - 25 - - 90 - - 30 - - 4.5 - - 7.5 - - - 1.9 - - 7.6 - - 1.8 - 430 650 ns - 1.4 2.1 C Rise Time Turn-Off Delay Time Fall Time tr td(off) VDD = 450 V, ID = 3.6 A, RG = 12 , RD= 120 , see fig. 10b tf Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact D ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 C, IS = 1.9 A, VGS = 0 Vb TJ = 25 C, IF = 3.6 A, dI/dt = 100 A/sb V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %. www.vishay.com 2 Document Number: 91186 S09-0063-Rev. A, 02-Feb-09 IRFIBF30G, SiHFIBF30G Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted Fig. 1 - Typical Output Characteristics, TC = 25 C Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics, TC = 150 C Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91186 S09-0063-Rev. A, 02-Feb-09 www.vishay.com 3 IRFIBF30G, SiHFIBF30G Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Document Number: 91186 S09-0063-Rev. A, 02-Feb-09 IRFIBF30G, SiHFIBF30G Vishay Siliconix RD VDS VGS D.U.T. RG + - VDD 10 V Pulse width 1 s Duty factor 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case L Vary tp to obtain required IAS VDS VDS tp VDD D.U.T RG + - I AS V DD VDS 10 V tp 0.01 Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91186 S09-0063-Rev. A, 02-Feb-09 IAS Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5 IRFIBF30G, SiHFIBF30G Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 k QG 10 V 12 V 0.2 F 0.3 F QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91186 S09-0063-Rev. A, 02-Feb-09 IRFIBF30G, SiHFIBF30G Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer + - - RG * * * * dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test Driver gate drive P.W. + Period D= + - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple 5 % ISD * VGS = 5 V for logic level devices Fig.14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91186. Document Number: 91186 S09-0063-Rev. 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