TL0640L thru TL3500L
FEATURES
Oxide Glass P assivat ed Ju nction
Bidirectional protection in a single device
Surge capabilities up to 30A @10/1000us or 150A
@8/20us
High off state Impedance and low on state voltage
Plastic mat eri al ha s UL flammability classification
94V-0
MECHA NICAL DATA
Case : JEDEC DO- 15 Molded plasti c
Po lari ty : Den ote s n on e ca tho de ba nd
Weight : 0.4 grams
SURFACE MO UNT
THYRISTOR SURGE PROTECTIVE DEVICE
VDRM -
58 to 320
Volts
IPP -
30
Amperes
MAXIMUM RA TINGS
MAXIM UM RATED SURGE WAVEFORM
WAVEFORM
THERM AL RE SISTANCE
℃
/W
UNIT
SYMBOL
%/
℃
Juncti on to leads
CHARACTERISTICS
Typical positive temperature coefficient for brekdown voltage
Rth
(J-L)
△
V
BR
/
△
T
J
0.1
VALUE
60
100
Junction to ambient on print circuit (on recommended pad layout)
Rth
(J-A)
℃
/W
2/10 us
8/20 us
10/160 us
10/700 us
10/560 us
10/1000 us
STANDARD
GR-1089-CORE
IEC 61000-4-5
FCC Pa rt 68
ITU-T K20/21
FCC Pa rt 68
GR-1089-CORE
I
PP
(A)
200
150
100
60
50
30
I
PP
, PEAK PUL SE CURR ENT (%)
100
50
0tr tp
TIME
Half value
Peak value (Ipp)
tr= ri se ti m e to pea k va l ue
tp= De cay ti me to h a lf value
SEMICONDUCTOR
LITE-ON
Bi-Directional
UNIT
SYMBOL
Non-repetitive peak im pulse current @ 10/1000us
CHARACTERISTICS
I
PP
I
TSM
A
A
VALUE
30
15
Non-repetitive peak On-state current @ 8.3ms (one half cycle)
Junction and storage temperature range
T
J ; TSTG
-55 to +150
℃
DO-15
Max.
All Dimensions in millimeter
Min.
D O-15
Dim.
A
D
C
B 25.4 7.60
-
5.80
0.71
2.60 3.60
0.86
A
C
D
A
B
REV. 0, 15-Nov-2001, KDWD03
SYMBOL
V
DRM
I
DRM
V
BR
I
BR
V
BO
I
BO
PARAMETER
Stand-off Voltage
Leakage current at stand-off voltage
Breakdown voltage
Breakdown current
Breakover voltage
Holding current Note: 1
I
H
V
T
I
PP
C
O
On state voltage
Peak pulse current
Off state capacitance Note: 2
Breakover current V
DRM
I
DRM
V
BR
I
BR
V
BO
I
BO
I
H
V
T
I
PP
V
I
NOTES: 1. I
H
> (V
L
/R
L
) If this criterion is not obeyed, the T
SPD
Triggers but does not return correctly to high-resistance state.
The Surge recovery time does not exceed 30ms.
2. Off-state capacitance measured at f=1.0MHz; 1.0V
RMS
signal; VR=2V
DC
bias.
TL0640L
TL0720L
75
58
65
TL0900L
TL1100L
TL1300L
TL1500L
TL1800L
TL2300L
TL2600L
TL3100L
TL3500L
140
90
120
220
160
190
275
320
5
5
5
5
5
5
5
5
5
5
5
98
77
88
180
130
160
300
220
265
350
400
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
150
150
150
150
150
150
150
150
150
150
150
100
100
100
60
60
60
40
60
40
40
40
50
50
50
50
50
50
50
50
50
50
50
Max
PARAMETER
SYMBOL
UNITS
LIMIT
RATED
REPETITIVE
OFF-STATE
VOLTAGE
OFF-STATE
LEAKAGE
CURRENT
@ V
DRM
BREAKOVER
VOLTAGE
ON-STATE
VOLTAGE
@ I
T
=1.0A
HOLDING
CURRENT OFF-STATE
CAPACITANCE
Max Max Max Min Max Min Typ
V
DRM
I
DRM
V
BO
V
T
I
BO
-I
BO+
I
H-
Co
Volts uA Volts Volts mA mA mA pF
ELECTRIC A L CHARACTERI STICS @ TA= 25
℃
℃℃
℃
unless otherwise specified
TL0640 L thru TL3 500L
BREAKOVER
CURRENT
800
800
800
800
800
800
800
800
800
800
800
Max
I
H+
mA
800
800
800
800
800
800
800
800
800
800
800
REV. 0, 15-Nov-2001, KDWD03
FI G .1 - O FF STATE CU RREN T v s JUNC TION T E MPE RATU RE
I(
DRM)
, OFF STATE CURRENT (uA)
T
J
, JUNCTION TEMPERATURE (
℃
)
VDRM=50V
100
10
1.0
0.1
0.001
0.01
-25 025 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
-50 -25 025 50 75 125 150
NORMALIZED BREAKDOWN VOLT AGE
1.20
1.10
1.05
1.0
0.90
0.95
1.15
VBR (TJ)
VBR (TJ=25
℃
)
100 175
FIG. 2 - RELATIVE VARIATION OF BREAKDOWN VOLT AGE
vs JUNCTION TEMPERATURE
T
J
, JUNCTION TEMPERATURE (
℃
)
-50 -25 025 50 75 125 150
NORMALIZED BREAKOVER V OLTAG E
1.10
1.05
1.0
0.95 100 175
FIG. 3 - RELATIVE VARIATION OF BREAKOVER VOLTAGE
vs JUNCTION TEMPERATURE
V (T); ON STATE VOLTAGE
I
(T)
, ON STATE CURRENT
FIG. 4 - ON STATE CURRENT vs ON STATE VOLTAGE
T
J
, JUNCTION TEMPERATURE (
℃
)
NORMALIZED HOLDING CURRENT
FIG. 5 - RELATIVE VARI ATION OF HOLDING C URRENT
vs JUNCTION TEMPERATURE
VR, REVERSE VOLTAGE
NORMALIZE CAPACIT ANCE
FIG. 6 - RELATIVE VARIATION OF JUNCT ION
CAPACITANCE vs REVERSE VOLTAGE BIAS
RATING AND CHARACTERIST IC S CURVES
TL0640 L thru TL3 500L
-50 -25 0 25 50 75 100 125
0
0.5
1
1.5
2
1 10 100
0.1
1
Tj =25
℃
f=1MHz
VRMS = 1V
CO(VR)
CO(VR = 1V)
IH (TJ)
IH (TJ=25
℃
)
VBO (TJ)
VBO (TJ=25
℃
)
123456789
1
10
100
T
J
= 25
℃
REV. 0, 15-Nov-2001, KDWD03
The PTC (Positive Temperature Coefficient) is an overcurrent protection device
TELECOM
EQUIPMENT
E.G. MODEM
FUSE
TSPD 1
RING
TIP
TELECOM
EQUIPMENT
E.G. LINE
CARD
RING
TIP
TSPD 2
TSPD 3
PTC
PTC
TSPD 1
TELECOM
EQUIPMENT
E.G. ISDN
TSPD 1
RING
TIP
TSPD 2
PTC
PTC
TYPICAL CIRCUIT APPLICATIONS
TL0640 L thru TL3 500L
REV. 0, 15-Nov-2001, KDWD03
