ZXMN10A11G
Document Number DS32056 Rev. 6 - 2 1 of 8
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ZXMN10A11G
ADVANCE INFORMATION
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS RDS(on) ID
TA = 25°C
100V 350mΩ @ VGS = 10V 2.4A
450mΩ @ VGS = 6.0V 2.1A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
• Motor control
• DC-DC Converters
• Power management functions
• Uninterrupted power supply
Features and Benefits
• Fast switching speed
• Low gate drive
• Low input capacitance
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT223
• Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
• Weight: 0.112 grams (approximate)
Ordering Information
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXMN10A11GTA See below 7 12 1,000
Marking Information
Top View
SOT223
ZXMN = Product Type Marking Code, Line 1
10A11 = Product Type Marking Code, Line 2
ZXMN
10A11
Equivalent Circuit
D
S
G
Pin Out - Top View
ZXMN10A11G
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ADVANCE INFORMATION
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source voltage VDSS 100 V
Gate-Source voltage VGS ±20 V
Continuous Drain current VGS = 10V (Note 2) ID
2.4 A
TA = 70°C (Note 2) 1.9
(Note 1) 1.7
Pulsed Drain current VGS= 10V (Note 3) IDM 7.9 A
Continuous Source current (Body diode) (Note 2) IS 4.6 A
Pulsed Source current (Body diode) (Note3 ) ISM 7.9 A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power dissipation
Linear derating factor
(Note 1) PD
2.0
16 W
mW/°C
(Note 2) 3.9
31
Thermal Resistance, Junction to Ambient (Note 1) RθJA 62.5 °C/W
(Note 2) 32.0
Thermal Resistance, Junction to Lead (Note 4) R
θ
JL 9.8 °C/W
Operating and storage temperature range TJ, TSTG -55 to 150 °C
Notes: 1. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
2. Same as note (1), except the device is measured at t ≤ 10 sec.
3. Same as note (1), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
4. Thermal resistance from junction to solder-point (at the end of the drain lead)
ZXMN10A11G
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Thermal Characteristics
1 10 100
10m
100m
1
10
Single Pulse
Tamb=25°C
RDS(on)
Limited
100µs
1ms
10ms
100ms
1s
DC
Safe O p erating A rea
ID Drain Current (A)
VDS Drain-Source Voltage (V) 0 20 40 60 80 100 120 140 160
0.0
0.4
0.8
1.2
1.6
2.0
Derating Curve
Temperatu re (°C)
Max P ower Dissipati o n (W)
100µ 1m 10m 100m 1 10 100 1k
0
10
20
30
40
50
60
70 Tamb=25°C
Transient Thermal Imped ance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Therm a l Re sistance (°C/ W)
Pu lse Width ( s) 100µ 1m 10m 100m 1 10 100 1k
1
10
100
S ingle Pulse
Tamb=25°C
Pulse Power Dissipation
Pulse Width (s)
Maximum Power (W)
ZXMN10A11G
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ADVANCE INFORMATION
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS 100 ⎯ ⎯ V ID = 250μA, VGS = 0V
Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1 μA VDS = 100V, VGS = 0V
Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage VGS(th) 2.0 ⎯ 4.0 V
ID = 250μA, VDS = VGS
Static Drain-Source On-Resistance (Note 5) RDS (ON) ⎯ ⎯ 0.35 Ω VGS = 10V, ID = 2.6A
0.45 VGS = 6V, ID = 1.3A
Forward Transconductance (Notes 5 & 6) gfs ⎯ 4 ⎯ S VDS = 15V, ID = 2.6A
Diode Forward Voltage (Note 5) VSD ⎯ 0.85 0.95 V
IS = 1.85A, VGS = 0V
Reverse recovery time (Note 6) trr 26 ⎯ ns IF = 1.0A, di/dt = 100A/μs
Reverse recovery charge (Note 6) Qrr ⎯ 30 ⎯ nC
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance Ciss ⎯ 274 ⎯ pF VDS = 50V, VGS = 0V
f = 1MHz
Output Capacitance Coss ⎯ 21 ⎯ pF
Reverse Transfer Capacitance Crss ⎯ 11 ⎯ pF
Total Gate Charge (Note 7) Qg ⎯ 3.5 ⎯ nC VGS = 6.0V
VDS = 50V
ID = 2.5A
Total Gate Charge (Note 7) Qg ⎯ 5.4 ⎯ nC VGS = 10V
Gate-Source Charge (Note 7) Qgs ⎯ 1.4 ⎯ nC
Gate-Drain Charge (Note 7) Qgd ⎯ 1.5 ⎯ nC
Turn-On Delay Time (Note 7) tD(on) ⎯ 2.7 ⎯ ns
VDD = 50V, VGS = 10V
ID = 1A, RG ≅ 6.0Ω
Turn-On Rise Time (Note 7) tr ⎯ 1.7 ⎯ ns
Turn-Off Delay Time (Note 7) tD(off) ⎯ 7.4 ⎯ ns
Turn-Off Fall Time (Note 7) tf ⎯ 3.5 ⎯ ns
Notes: 5. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
6. For design aid only, not subject to production testing.
7. Switching characteristics are independent of operating junction temperatures.
ZXMN10A11G
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Typical Characteristics
0.1 1 10
0.01
0.1
1
10
0.1 1 10
0.01
0.1
1
10
345
0.1
1
-50 0 50 100 150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
0.01 0.1 1 10
0.1
1
10
100
0.4 0.6 0.8 1.0
0.01
0.1
1
10
3.5V
10V 5V
4V
O utp u t C h aracteristics
T = 25°C
4.5V
VGS
ID Drain Current (A)
VDS Drain-Source Voltage (V)
10V
2.5V
3V
4.5V
5V
3.5V
Ou tput Characteristics
T = 150°C
VGS
4V
ID Drain Current (A)
VDS Drain-Source Voltage (V)
Typical Transfer Characteristics
VDS = 10V
T = 25°C
T = 150°C
ID Drain Current (A)
VGS Gate-Source Voltage (V) No rm alised Cu rv es v Temp erature
RDS(on)
VGS = 10V
ID = 2.6A
VGS(th)
VGS = VDS
ID = 250uA
Normalised RDS(on) and VGS(th)
Tj Junction Temperature (°C)
3.5V 4V
10V
5V
4.5V
O n -R esistance v Drain Current
T = 25°C
VGS
RDS(on) Drain-Source On-Resistance (Ω)
ID Drain Current (A)
T = 150°C
T = 25°C
Source-Drain Diode Forward Voltage
VSD Source-Drain Voltage (V)
ISD Reverse Drain Current (A)
ZXMN10A11G
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ADVANCE INFORMATION
Typical Characteristics - continued
Test Circuits
Current
regulator
Charge
Gate charge test circuit
Switching time test circuit
Basicgatechargewaveform
Switching time waveforms
D.U.T
50k
12V Same as
D.U.T
VGS
VGS
V
DS
V
G
Q
GS
Q
GD
Q
G
V
GS
90%
10%
t
(on)
t
(on)
t
d(on)
t
r
t
r
t
VDS
DD
V
RD
RG
VDS
ID
IG
d(off)
ZXMN10A11G
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ADVANCE INFORMATION
Package Outline Dimensions
DIM Millimeters Inches DIM Millimeters Inches
Min Max Min Max Min Max Min Max
A - 1.80 - 0.071 D 6.30 6.70 0.248 0.264
A1 0.02 0.10 0.0008 0.004 e 2.30 BSC 0.0905 BSC
A2 1.55 1.65 0.0610 0.0649 e1 4.60 BSC 0.181 BSC
b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287
b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146
C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 -
Suggested Pad Layout
1.5
0.059
mm
inches
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.0
0.079
ZXMN10A11G
Document Number DS32056 Rev. 6 - 2 8 of 8
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ADVANCE INFORMATION
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