7MBP150RA120 1200V / 150A 7 in one-package IGBT-IPM R series Features * Temperature protection provided by directly detecting the junction temperature of the IGBTs * Low power loss and soft switching * High performance and high reliability IGBT with overheating protection * Higher reliability because of a big decrease in number of parts in built-in control circuit Maximum ratings and characteristics Absolute maximum ratings(at Tc=25C unless otherwise specified) Symbol Item DC bus voltage DC bus voltage (surge) DC bus voltage (short operating) Collector-Emitter voltage DB Reverse voltage INV Collector current DB Collector power dissipation Collector current DC 1ms DC One transistor DC 1ms Forward current of Diode Collector power dissipation One transistor Junction temperature Input voltage of power supply for Pre-Driver Input signal voltage Input signal current Alarm signal voltage Alarm signal current Storage temperature Operating case temperature Isolating voltage (Case-Terminal) Screw torque Mounting (M5) Terminal (M5) VDC VDC(surge) VSC VCES VR IC ICP -IC PC IC ICP IF PC Tj VCC *1 Vin *2 Iin VALM *3 IALM *4 Tstg Top Viso *5 Rating Min. Max. 0 0 200 0 0 0 0 -40 -20 - 900 1000 800 1200 1200 150 300 150 1040 50 100 50 400 150 20 Vz 1 Vcc 15 125 100 AC2.5 3.5 *6 3.5 *6 Unit V V V V V A A A W A A A W C V V mA V mA C C kV N*m N*m Fig.1 Measurement of case temperature *1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10. *2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 12,13,14,15 and 10. *3 Apply VALM between terminal No. 16 and 10. *4 Apply IALM to terminal No. 16. *5 50Hz/60Hz sine wave 1 minute. *6 Recommendable Value : 2.5 to 3.0 N*m Electrical characteristics of power circuit (at Tc=Tj=25C, Vcc=15V) Item INV DB Symbol Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of Diode ICES VCE(sat) VF ICES VCE(sat) VF Condtion VCE=1200V input terminal open Ic=150A -Ic=150A VCE=1200V input terminal open Ic=50A -Ic=50A http://store.iiic.cc/ Min. Typ. - - - - - - - - - - - - Max. Unit 1.0 2.6 3.0 1.0 2.6 3.3 mA V V mA V V 7MBP150RA120 IGBT-IPM Electrical characteristics of control circuit(at Tc=Tj=25C, Vcc=15V) Item Power supply current of P-line side Pre-driver(one unit) Power supply current of N-line side three Pre-driver Input signal threshold voltage (on/off) Symbol Iccp ICCN Vin(th) Input zener voltage Over heating protection temperature level Hysteresis IGBT chips over heating protection temperature level Hysteresis Collector current protection level INV DB Over current protection delay time (Fig.2) Under voltage protection level Hysteresis Alarm signal hold time SC protection delay time Limiting resistor for alarm VZ TCOH TCH TjOH TjH IOC IOC tDOC VUV VH tALM tSC RALM Condition fsw=0 to 15kHz Tc=-20 to 100C *7 Min. Typ. Max. 3 18 fsw=0 to 15kHz Tc=-20 to 100C *7 10 65 ON 1.00 1.35 1.70 OFF 1.70 2.05 2.40 Rin=20k ohm 8.0 VDC=0V, Ic=0A, Case temperature, Fig.1 110 125 20 surface of IGBT chips 150 20 Tj=125C 225 Tj=125C 75 Tj=25C Fig.2 10 11.0 12.5 0.2 1.5 2 Tj=25C Fig.3 12 1425 1500 1575 Unit mA mA V V V C C C C A A s V V ms s ohm *7 Switching frequency of IPM Dynamic characteristics(at Tc=Tj=125C, Vcc=15V) Item Switching time (IGBT) Symbol Condition ton toff trr Switching time (FWD) Min. IC=150A, VDC=600V Typ. Max. Unit - - s s s 0.3 - IF=150A, VDC=600V 3.6 0.4 Thermal characteristics(Tc=25C) Item Junction to Case thermal resistance INV DB IGBT FWD IGBT Case to fin thermal resistance with compound Symbol Rth(j-c) Rth(j-c) Rth(j-c) Rth(c-f) Typ. 0.05 Max. 0.12 0.29 0.31 - Unit C/W C/W C/W C/W Typ. 15 - Max. 800 16.5 20 3.0 3.0 Unit V V kHz N*m N*m Recommendable value Item DC bus voltage Operating power supply voltage range of Pre-driver Switching frequency of IPM Screw torque Mounting (M5) Terminal (M5) Symbol VDC VCC fSW - http://store.iiic.cc/ Min. 200 13.5 1 2.5 2.5 7MBP150RA120 IGBT-IPM Block diagram Pre-drivers include following functions a) Amplifier for driver b) Short circuit protection c) Undervoltage lockout circuit d) Over current protection e) IGBT chip over heating protection Outline drawings, mm Mass : 920g http://store.iiic.cc/ 7MBP150RA120 IGBT-IPM Characteristics (Representative) Control Circuit Power supply current vs. Switching frequency Tj=100C 70 Vcc=15V 60 Vcc=13V 50 40 30 Vcc=17V Vcc=15V 20 Vcc=13V 2 } Vin(off) 1.5 } Vin(on) 1 0.5 10 0 0 0 5 10 15 20 25 12 13 Switching frequency : fsw (kHz) Under voltage hysterisis : VH (V) Under voltage : VUVT (V) 18 1 12 10 8 6 4 2 0 14 15 16 17 Power supply voltage : Vcc (V) Under voltage hysterisis vs. Jnction temperature Under voltage vs. Junction temperature 14 0.8 0.6 0.4 0.2 0 20 40 60 80 100 120 140 20 40 80 100 120 140 17 18 Over heating characteristics TcOH,TjOH,TcH,TjH vs. Vcc Alarm hold time vs. Power supply voltage Over heating protection : TcOH,TjOH (C) OH hysterisis : TcH,TjH (C) 3 2.5 Tj=125C 2 Tj=25C 1.5 1 0.5 0 12 60 Junction temperature : Tj (C) Junction temperature : Tj (C) Alarm hold time : tALM (mSec) Tj=25C Tj=125C 2.5 Vcc=17V P-side N-side Input signal threshold voltage : Vin(on),Vin(off) (V) Power supply current : Icc (mA) 80 Input signal threshold voltage vs. Power supply voltage 200 TjOH 150 TcOH 100 50 TcH,TjH 0 13 14 15 16 17 18 Power supply voltage : Vcc (V) http://store.iiic.cc/ 12 13 14 15 16 Power supply voltage : Vcc (V) 7MBP150RA120 IGBT-IPM Inverter Collector current vs. Collector-Emitter voltage Tj=25C 250 250 Vcc=15V Collector current vs. Collector-Emitter voltage Tj=125C Vcc=15V Vcc=17V Collector Current : Ic (A) Collector Current : Ic (A) Vcc=17V 200 Vcc=13V 150 100 200 Vcc=13V 150 100 50 50 0 0 0.5 1 1.5 2 2.5 3 Collector-Emitter voltage : Vce (V) 0.5 3.5 Switching time vs. Collector current Edc=600V,Vcc=15V,Tj=25C Switching time : ton,toff,tf (nSec) Switching time : ton,toff,tf (nSec) toff ton 1000 tf 100 toff ton 1000 tf 100 10 10 0 50 100 150 200 Collector current : Ic (A) 0 250 50 100 150 200 Collector current : Ic (A) 250 Reverse recovery characteristics trr,Irr vs. IF Forward current vs. Forward voltage 250 125C 25C Reverse recovery current : Irr(A) Reverse recovery time : trr(nSec) trr125C 200 Forward Current : If (A) 3.5 Switching time vs. Collector current Edc=600V,Vcc=15V,Tj=125C 10000 10000 1 1.5 2 2.5 3 Collector-Emitter voltage : Vce (V) 100 150 100 50 0 trr25C Irr125C Irr25C 10 0 0.5 1 1.5 2 2.5 3 0 Forward voltage : Vf (V) http://store.iiic.cc/ 50 100 150 200 Forward current : IF(A) 250 7MBP150RA120 IGBT-IPM Reversed biased safe operating area Vcc=15V,Tj < = 125C Transient thermal resistance 2100 FWD 1800 Collector current : Ic (A) Thermal resistance : Rth(j-c) (C/W) 1 1500 0.1 IGBT 0.01 1200 SCSOA (non-repetitive pulse) 900 600 300 0.001 RBSOA (Repetitive pulse) 0 0.001 0.01 0.1 0 1 200 Pulse width :Pw (sec) 800 1000 1200 1400 500 Collecter Power Dissipation : Pc (W) 1200 Collecter Power Dissipation : Pc (W) 600 Power derating for FWD (per device) Power derating for IGBT (per device) 1000 800 600 400 200 400 300 200 100 0 0 0 60 20 40 60 80 100 120 140 0 160 20 40 60 80 100 120 140 Case Temperature : Tc (C) Case Temperature : Tc (C) S w itch in g L os s v s. C o lle cto r C u rren t E dc = 60 0V ,V c c = 1 5V ,T j= 2 5C Switching Loss vs. Collector Current Edc=600V,Vcc=15V,Tj=125C 160 60 Switching loss : Eon,Eoff,Err (mJ/cycle) Switching loss : Eon,Eoff,Err (mJ/cycle) 400 Collector-Emitter voltage : Vce (V) 50 40 Eon 30 20 Eoff 10 Err Eon 50 40 30 Eoff 20 Err 10 0 0 0 50 100 150 200 250 0 50 100 150 Collector current : Ic (A) Collector current : Ic (A) http://store.iiic.cc/ 200 250 7MBP150RA120 IGBT-IPM Over current protection level : Ioc(A) Over current protection vs. Junction temperature Vcc=15V 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 Junction temperature : Tj(C) http://store.iiic.cc/ 7MBP150RA120 IGBT-IPM Brake Collector current vs. Collector-Emitter voltage Tj=125C Collector current vs. Collector-Emitter voltage Tj=25C Vcc=15V 80 Vcc=13V 60 50 40 30 20 10 0 Vcc=17V 70 Collector Current : Ic (A) Collector Current : Ic (A) 70 Vcc=15V 80 Vcc=17V Vcc=13V 60 50 40 30 20 10 0 0.5 1 1.5 2 2.5 0 3 0 0.5 Collector-Emitter voltage : Vce (V) 1.5 2 2.5 3 Reversed biased safe operating area Vcc=15V,Tj 125C Transient thermal resistance 1 700 600 IGBT Collector current : Ic (A) Thermal resistance : Rth(j-c) (C/W) 1 Collector-Emitter voltage : Vce (V) 0.1 500 400 SCSOA (non-repetitive pulse) 300 200 100 0.01 0 0.001 0.01 0.1 RBSOA (Repetitive pulse) 0 200 1 400 600 800 1000 1200 1400 Collector-Emitter voltage : Vce (V) Pulse width :Pw (sec) Power derating for IGBT (per device) Over current protection vs. Junction temperature Vcc=15V 200 Over current protection level : Ioc(A) Collecter Power Dissipation : Pc (W) 400 350 150 300 250 100 200 150 100 50 50 0 0 0 20 40 60 80 100 120 140 160 Case Temperature : Tc (C) http://store.iiic.cc/ 0 20 40 60 80 100 Junction temperature : Tj(C) 120 140