Sep.2000
1.
2.
3.
4.
5.
6.
7.
8.
9.
V
V
V
V
V
V
V
10.
11.
12.
13.
14.
15.
16.
U
U
VV
W
W
WPC
UPI
VPI
WPI
NC
NI
P
N
P
P
N
N
UPC
FO
VVPC
17.
18.
19.
NC
OWF
OVF
OUF
AC
R
B
A
Y
Y
C
E
V
F
W
M M S
ZDZ
J
Q
Q
T
H
AC WWW
AHAH G
10
12
N
V
BP
W
U
ZY
ZY
AB - THD
(6 TYP.)
AA - DIA.
(4 TYP.)
3
AE (15 TYP.)
4 5678 9 11
12 14 16 18
13 15 17 19
P
AF AG
X
AD
NLK
U
2.54 MM DIA. (2 TYP.)
0.5 MM SQ. PIN
(19 TYP.)
V
VCC
SI
GND GND
OUT UPI
V
UFO
UP
UPC
FO
IN
VCC
SI
GND GND
OUT FO
IN
VCC
SI
GND GND
OUT FO
IN
V
V
FO
V
V
FO
VPI
V
VP
VPC
WPI
W
WP
WPC
VCC
SI
GND GND
OUT FO
IN
VCC
SI
GND GND
OUT FO
IN
UN
VCC
SI
GND GND
OUT FO
IN
V
V
W
NV
NI
N
NC
TEMP
NC
FO
PUVWNNC
Description:
Mitsubishi Intelligent Power Mod-
ules are isolated base modules de-
signed for power switching applica-
tions operating at frequencies to
20kHz. Built-in control circuits pro-
vide optimum gate drive and pro-
tection for the IGBT and free-wheel
diode power devices.
Features:
uComplete Output Power
Circuit
uGate Drive Circuit
uProtection Logic
– Short Circuit
– Over Current
– Over Temperature
– Under Voltage
Applications:
uInverters
uUPS
uMotion/Servo Control
uPower Supplies
Ordering Information:
Example: Select the complete
part number from the table below
-i.e. PM100CSA120 is a 1200V,
100 Ampere Intelligent Power Mod-
ule.
Type Current Rating VCES
Amperes Volts (x 10)
PM 100 120
Dimensions Inches Millimeters
A 5.31±0.04 135.0±1.0
B 4.74±0.02 120.5±0.5
C 4.33±0.04 110.0±1.0
D 4.27 108.5
E 3.76±0.02 95.5±0.5
F 3.29 83.5
G 2.01 51.0
H 1.602 40.68
J 1.54 39.0
K 1.37 34.7
L 1.33 33.7
M 1.02 26.0
N 0.95 +0.06/-0.0 24.1 +1.5/-0.0
P 0.84 21.3
Q 0.79 20.0
R 0.780 19.82
Dimensions Inches Millimeters
S 0.69 17.5
T 0.65 16.5
U 0.52 13.2
V 0.43 11.0
W 0.39 10.0
X 0.31 8.0
Y 0.285 7.25
Z 0.24 6.0
AA 0.22 Dia. Dia. 5.5
AD Metric M5 M5
AC 0.128 3.22
AD 0.10 2.6
AE 0.08 2.0
AF 0.07 1.8
AG 0.06 1.6
AH 0.02 0.5
Outline Drawing and Circuit Diagram
MITSUBISHI INTELLIGENT POWER MODULES
PM100CSA120
FLAT-BASE TYPE
INSULATED PACKAGE
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM100CSA120
FLAT-B ASE TYPE
INSULATED PACKAGE
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Symbol Ratings Units
Power Device Junction Temperature Tj-20 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Case Operating Temperature TC-20 to 100 °C
Mounting Torque, M5 Mounting Screws — 1.47 ~ 1.96 N · m
Mounting Torque, M5 Main Terminal Screws — 1.47 ~ 1.96 N · m
Module Weight (Typical) — 920 Grams
Supply Voltage Protected by OC and SC (V D = 13.5 - 16.5V, Inverter Par t, Tj = 125 °C) VCC(prot.) 800 Volts
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms
Control Sector
Supply Voltage (Applied between VUP1-VUPC, VVP1-VVPC, VWP1-VWPC, VN1-VNC)V
D20 Volts
Input Voltage (Applied between UP-VUPC, VP-VVPC, WP-VWPC, UN · VN · WN-VNC)V
CIN 20 Volts
Fault Output Supply V oltage
(Applied between U
FO
-V
UPC
, V
FO
-V
VPC
, W
FO
-V
WPC
, F
O
-V
NC
)
VFO 20 Volts
Fault Output Current (Sink Current of UFO, VFO, WFO and FO Terminal) IFO 20 mA
IGBT Inverter Sector
Collector-Emitter Voltage (VD = 15V, VCIN = 15V) VCES 1200 Volts
Collector Current, (TC = 25°C) IC100 Amperes
Peak Collector Current, (TC = 25°C) ICP 200 Amperes
Supply Voltage (Applied between P - N) VCC 900 Volts
Supply Voltage, Surge (Applied between P - N) VCC(surge) 1000 Volts
Collector Dissipation PC595 Watts
Sep.2000
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Control Sector
Over Current Trip Level Inverter Par t OC -20°C ≤ T ≤ 125°C, VD = 15V 145 230 — Amperes
Short Circuit Trip Level Inver ter Part SC -20 °C ≤ T ≤ 125°C, VD = 15V — 340 — Amperes
Over Current Delay Time t off(OC) VD = 15V — 10 — µs
Over Temperature Protection OT Trip Le vel 1 11 11 8 125 °C
OTrReset Level — 100 — °C
Supply Circuit Under Voltage Protection UV Tri p Level 11.5 12.0 12.5 Volts
UVrReset Level — 12.5 — Volts
Supply V oltage VDApplied between VUP1-VUPC, 13.5 15 16.5 Volts
VVP1-VVPC, VWP1-VWPC, VN1-VNC
Circuit Current IDVD = 15V, VCIN = 15V, VN1-VNC —4055mA
VD = 15V, VCIN = 15V, VXP1-VXPC —1318mA
Input ON Threshold Voltage Vth(on) Applied between 1.2 1.5 1.8 mA
Input OFF Threshold Voltage V th(off) UP-VUPC, VP-VVPC, WP-VWPC, 1.7 2.0 2.3 mA
UN · VN · WN-VNC
PWM Input Frequency fPWM 3-φ Sinusoidal — 15 20 kHz
Fault Output Current IFO(H) VD = 15V, VFO = 15V — — 0.01 mA
IFO(L) VD = 15V, VFO = 15V — 10 15 mA
Minimum Fault Output Pulse Width tFO VD = 15V 1.0 1.8 — ms
MITSUBISHI INTELLIGENT POWER MODULES
PM100CSA120
FLAT-BASE TYPE
INSULATED PACKAGE
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM100CSA120
FLAT-B ASE TYPE
INSULATED PACKAGE
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
IGBT Inverter Sector
Collector Cutoff Current ICES VCE = VCES, Tj = 25 °C — — 1.0 mA
VCE = VCES, Tj = 125°C——10mA
Diode Forward Voltage VEC -IC = 100A, V D = 15V, VCIN = 0V — 2.5 3.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) VD = 15V, VCIN = 15V, IC = 100A — 2.5 3.5 Volts
VD = 15V, VCIN = 15V, IC = 100A, — 2.2 3.2 Volts
Tj = 125°C
Inductive Load Switching Times ton 0.5 1.0 2.5 µs
trr VD = 15V, VCIN = 0 ↔ 15V — 0.15 0.3 µs
tC(on) VCC = 600V, IC = 100A — 0.4 1.0 µs
toff Tj = 125°C — 2.5 3.5 µs
tC(off) — 0.7 1.2 µs
Thermal Characteristics
Characteristic Symbol Condition Min. Ty p. Max. Units
Junction to Case Thermal Resistance Rth(j-c)Q Each IGBT — — 0.21 °C/Watt
Rth(j-c)F Each FWDi — — 0.35 °C/Watt
Contact Thermal Resistance R th(c-f) Case to Fin Per Module, — — 0.018 °C/Watt
Thermal Grease Applied
Recommended Conditions for Use
Characteristic Symbol Condition Value Units
Supply Voltage VCC Applied across P-N Terminals 0 ~ 800 Volts
VDApplied between VUP1-VUPC,15 ± 1.5 Volts
VN1-VNC, VVP1-VVPC, VWP1-VWPC
Input ON Voltage VCIN(on) Applied between 0 ~ 0.8 Volts
Input OFF Voltage VCIN(off) UP-VUPC, VP-VVPC, WP-VWPC, 4.0 ~ VDVolts
UN · VN · WN-VNC
PWM Input Frequency fPWM Using Application Circuit 5 ~ 20 kHz
Minimum Dead Time tdead Input Signal ≥ 3.0 µs
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM100CSA120
FLA T-B ASE TYPE
INSULATED PACKAGE
0
1
2
3
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT, IC, (AMPERES)
SATURATION VOLTAGE VCE(sat), (VOLTS)
0 12040 80
VD = 15V
VCIN = 0V
Tj = 25oC
Tj = 125oC
0
1
2
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS (TYPICAL)
SUPPLY VOLTAGE, VD, (VOLTS)
COLLECTOR-EMITTER SATURATION VOLTAGE
VCE(sat), (VOLTS)
12 14 16 18 20
Tj = 25oC
Tj = 125oC
3
0
VD = 15V
VCIN = 0V
012
0
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
3
40
80
120 Tj = 25oC
VCIN = 0V
VD = 17V 13
15
20
60
100
101102103
10-1
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING TIMES, ton, toff, (µs)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
ton
100
101
toff
VCC = 600V
VD = 15V
Inductive Load
Tj = 25oC
Tj = 125oC
101102103
10-1
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING TIMES, tc(on), tc(off), (µs)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
tc(on)
100
101
tc(off)
VCC = 600V
VD = 15V
Inductive Load
Tj = 25oC
Tj = 125oC
101102103
10-2
COLLECTOR REVERSE CURRENT, -IC, (AMPERES)
REVERSE RECOVERY TIME, trr, (µs)
REVERSE RECOVERY CURRENT VS.
COLLECTOR CURRENT (TYPICAL)
10-1
100
VCC = 600V
VD = 15V
Inductive Load
Tj = 25oC
Tj = 125oC
100
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
101
102
trr
Irr
001.0 2.5
100
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
COLLECTOR REVERSE CURRENT, -IC, (AMPERES)
DIODE FORWARD CHARACTERISTICS
101
102
0.5 1.5 2.0
Tj = 25oC
Tj = 125oC
VD = 15V
VCIN = 15V
0
90
100
110
120
OVER CURRENT TRIP LEVEL VS.
SUPPLY VOLTAGE (TYPICAL)
SUPPLY VOLTAGE, VD, (VOLTS)
OVER CURRENT TRIP LEVEL % (NORMALIZED)
12 14 16 18 20
Tj = 25oC
80
0
80
90
120
OVER CURRENT TRIP LEVEL
TEMPERATURE DEPENDENCY (TYPICAL)
JUNCTION TEMPERATURE, Tj, (oC)
OVER CURRENT TRIP LEVEL % (NORMALIZED)
0 50 100 150-50
VD = 15V
110
100
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM100CSA120
FLAT-B ASE TYPE
INSULATED PACKAGE
0
40
0
60
80
100
120
FAULT OUTPUT PULSE WIDTH VS.
TEMPERATURE (TYPICAL)
JUNCTION TEMPERATURE, Tj, (oC)
FAULT OUTPUT PULSE WIDTH % (NORMALIZED)
-50 0 50 100 150
VD = 15V
11
12
13
14
15
CONTROL SUPPLY VOLTAGE TRIP-RESET
LEVEL TEMPERATURE DEPENDENCY
(TYPICAL)
JUNCTION TEMPERATURE, Tj, (oC)
UV TRIP-RESET LEVEL,
UVt, UVr, (VOLTS)
-50 150050100
UVt
UVr
TIME, (s)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each IGBT)
101
10-1 100101
100
10-1
10-2
10-3
SINGLE PULSE
STANDARD VALUE = Rth(j-c)Q = 0.21oC/W
10-2
10-3
TIME, (s)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each FWDi)
101
10-1 100101
100
10-1
10-2
10-3
SINGLE PULSE
STANDARD VALUE = Rth(j-c)F = 0.35oC/W
10-2
10-3
