VBO40-16NO6 3~ 1~ Rectifier Standard Rectifier VRRM = 1600 V I DAV = 40 A I FSM = 320 A 1~ Rectifier Bridge Part number VBO40-16NO6 Backside: isolated 3 2 1 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) Planar passivated chips Very low leakage current Very low forward voltage drop Improved thermal behaviour Diode for main rectification For one phase bridge configurations Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors Isolation Voltage: 3000 V~ Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Base plate: Copper internally DCB isolated Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130517b VBO40-16NO6 Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 1700 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 1600 V IR reverse current VF VR = 1600 V TVJ = 25C 40 A TVJ = 150C 1.5 mA TVJ = 25C 1.15 V 1.33 V 1.07 V 20 A IF = 40 A IF = 20 A IF = 40 A TVJ = 125 C TC = 115C I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current It CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 1.31 V T VJ = 150 C 40 A TVJ = 150 C 0.81 V d = 0.5 for power loss calculation only Ptot typ. VR = 1600 V IF = forward voltage drop min. 12.1 m 1.3 K/W K/W 0.10 TC = 25C 95 W t = 10 ms; (50 Hz), sine TVJ = 45C 320 A t = 8,3 ms; (60 Hz), sine VR = 0 V 345 A t = 10 ms; (50 Hz), sine TVJ = 150 C 270 A t = 8,3 ms; (60 Hz), sine VR = 0 V 295 A t = 10 ms; (50 Hz), sine TVJ = 45C 510 As t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 495 As TVJ = 150 C 365 As 360 As t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25C Data according to IEC 60747and per semiconductor unless otherwise specified 11 pF 20130517b VBO40-16NO6 Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 150 Unit A -40 150 C -40 150 C Weight 30 MD mounting torque MT terminal torque d Spp/App d Spb/Apb VISOL creepage distance on surface | striking distance through air t = 1 minute 1.1 1.5 1.1 1.5 Nm Nm terminal to terminal 10.5 3.2 mm terminal to backside 8.6 6.8 mm 3000 V 2500 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL 1 mA Product Marking abcde Logo YYWW Z Part No. XXXXXX Assembly Code DateCode Assembly Line Ordering Standard Part Number VBO40-16NO6 Similar Part VBO40-12NO6 VBO40-08NO6 Equivalent Circuits for Simulation I V0 R0 Marking on Product VBO40-16NO6 Package SOT-227B (minibloc) SOT-227B (minibloc) * on die level Delivery Mode Tube Code No. 475904 Voltage class 1200 800 T VJ = 150 C Rectifier V 0 max threshold voltage 0.81 V R 0 max slope resistance * 10.2 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20130517b VBO40-16NO6 Outlines SOT-227B (minibloc) 3 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 2 1 4 Data according to IEC 60747and per semiconductor unless otherwise specified 20130517b VBO40-16NO6 Rectifier 80 300 60 250 700 50 Hz 0.8 x V RRM VR = 0 V 600 500 IF IFSM 2 TVJ = 45C It 200 40 [A] 400 [A] TVJ = 45C 2 [A s] TVJ = 150C TVJ = 150C 300 TVJ = 125C 150C 20 150 200 TVJ = 25C 0 0.6 0.8 1.0 1.2 1.4 1.6 100 10-3 1.8 100 10-2 10-1 100 t [s] Fig. 1 Forward current vs. voltage drop per diode Fig. 2 Surge overload current vs. time per diode 28 20 Ptot 16 10 2 Fig. 3 I t vs. time per diode 80 RthJA: DC = 1 0.5 0.4 0.33 0.17 0.08 24 1 t [ms] VF [V] DC = 0.6 KW 1 0.8 KW 1 KW 2 KW 4 KW 8 KW 60 0.5 0.4 0.33 IF(AV)M 0.17 40 [W] 12 0.08 [A] 8 20 4 0 0 0 5 10 15 20 0 25 50 75 100 125 150 0 175 25 50 TA [C] IdAVM [A] 75 100 125 150 TC [C] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode 1.6 1.2 Constants for ZthJC calculation: ZthJC 0.8 [K/W] 0.4 0.0 1 10 100 1000 i Rth (K/W) ti (s) 1 0.061 0.0002 2 0.145 0.0036 3 0.398 0.0200 4 0.405 0.1000 5 0.291 0.7000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130517b