IPA60R099C7 MOSFET 600VCoolMOSC7PowerDevice PG-TO220FP CoolMOSTMC7isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. 600VCoolMOSTMC7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation. The600VC7isthefirsttechnologyeverwithRDS(on)*Abelow1Ohm*mm. Features *Suitableforhardandsoftswitching(PFCandhighperformanceLLC) *IncreasedMOSFETdv/dtruggednessto120V/ns *IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg *BestinclassRDS(on)/package Drain Pin 2 *1 Gate Pin 1 Benefits *IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe application *Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency *Enablinghighersystemefficiencybylowerswitchinglosses *Increasedpowerdensitysolutionsduetosmallerpackages *Suitableforapplicationssuchasserver,telecomandsolar *Higherswitchingfrequenciespossiblewithoutlossinefficiencydueto lowEossandQg *1: Internal body diode Source Pin 3 Potentialapplications PFCstagesandPWMstages(TTF,LLC)forhighpower/performance SMPSe.g.Computing,Server,Telecom,UPSandSolar. Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 99 m Qg.typ 42 nC ID,pulse 83 A ID,continuous @ Tj<150C 36 A Eoss@400V 4.95 J Body diode di/dt 360 A/s Type/OrderingCode Package Marking IPA60R099C7 PG-TO 220 FullPAK 60C7099 Final Data Sheet 1 RelatedLinks see Appendix A Rev.2.1,2020-01-29 600VCoolMOSC7PowerDevice IPA60R099C7 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 2 Rev.2.1,2020-01-29 600VCoolMOSC7PowerDevice IPA60R099C7 1Maximumratings atTj=25C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 12 8 A TC=25C TC=100C - 83 A TC=25C - - 97 mJ ID=5A; VDD=50V; see table 10 EAR - - 0.49 mJ ID=5A; VDD=50V; see table 10 Avalanche current, single pulse IAS - - 5.0 A - MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 33 W TC=25C Storage temperature Tstg -55 - 150 C - Operating junction temperature Tj -55 - 150 C - Mounting torque - - - 50 Ncm M2.5 screws IS - - 12 A TC=25C Diode pulse current IS,pulse - - 83 A TC=25C Reverse diode dv/dt3) dv/dt - - 20 V/ns VDS=0...400V,ISD<=7.7A,Tj=25C see table 8 Maximum diode commutation speed dif/dt - - 360 A/s VDS=0...400V,ISD<=7.7A,Tj=25C see table 8 Insulation withstand voltage VISO - - 2500 V Vrms,TC=25C,t=1min Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive Continuous diode forward current 2) 1) Limited by Tj max. Pulse width tp limited by Tj,max 3) Identical low side and high side switch 2) Final Data Sheet 3 Rev.2.1,2020-01-29 600VCoolMOSC7PowerDevice IPA60R099C7 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Unit Note/TestCondition Min. Typ. Max. RthJC - - 3.79 C/W - Thermal resistance, junction - ambient RthJA - - 80 C/W leaded Thermal resistance, junction - ambient RthJA for SMD version - - - C/W n.a. Soldering temperature, wavesoldering only allowed at leads - - 260 C Final Data Sheet Tsold 4 1.6mm (0.063 in.) from case for 10s Rev.2.1,2020-01-29 600VCoolMOSC7PowerDevice IPA60R099C7 3Electricalcharacteristics atTj=25C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3.5 4 V VDS=VGS,ID=0.49mA - 10 1 - A VDS=600,VGS=0V,Tj=25C VDS=600,VGS=0V,Tj=150C IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.085 0.190 0.099 - VGS=10V,ID=9.7A,Tj=25C VGS=10V,ID=9.7A,Tj=150C Gate resistance RG - 0.82 - f=1MHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 600 - Gate threshold voltage V(GS)th 3 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 1819 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance Coss - 33 - pF VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related1) Co(er) - 63 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 641 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 11.8 - ns VDD=400V,VGS=13V,ID=9.7A, RG=5.3;seetable9 Rise time tr - 8 - ns VDD=400V,VGS=13V,ID=9.7A, RG=5.3;seetable9 Turn-off delay time td(off) - 54 - ns VDD=400V,VGS=13V,ID=9.7A, RG=5.3;seetable9 Fall time tf - 4.5 - ns VDD=400V,VGS=13V,ID=9.7A, RG=5.3;seetable9 Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 9 - nC VDD=400V,ID=9.7A,VGS=0to10V Gate to drain charge Qgd - 14 - nC VDD=400V,ID=9.7A,VGS=0to10V Gate charge total Qg - 42 - nC VDD=400V,ID=9.7A,VGS=0to10V Gate plateau voltage Vplateau - 5.0 - V VDD=400V,ID=9.7A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 2) Final Data Sheet 5 Rev.2.1,2020-01-29 600VCoolMOSC7PowerDevice IPA60R099C7 Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=9.7A,Tj=25C 350 - ns VR=400V,IF=9.7A,diF/dt=100A/s; see table 8 - 4.4 - C VR=400V,IF=9.7A,diF/dt=100A/s; see table 8 - 27 - A VR=400V,IF=9.7A,diF/dt=100A/s; see table 8 Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 6 Rev.2.1,2020-01-29 600VCoolMOSC7PowerDevice IPA60R099C7 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 102 40 1 s 10 s 100 s 1 ms 35 10 10 ms 1 DC 30 100 ID[A] Ptot[W] 25 20 10-1 15 10-2 10 10-3 5 0 0 25 50 75 100 125 10-4 150 100 101 TC[C] 102 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 10 100 s 1 ms 10 ms 101 10 s 1 s 101 0.5 DC 100 ZthJC[K/W] ID[A] 100 10-1 10-2 0.2 0.1 0.05 10-1 0.02 0.01 10-3 10-4 single pulse 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 tp[s] ID=f(VDS);TC=80C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tP);parameter:D=tp/T 7 Rev.2.1,2020-01-29 600VCoolMOSC7PowerDevice IPA60R099C7 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 140 80 20 V 120 20 V 70 10 V 8V 7V 60 100 10 V 8V 7V 6V 50 ID[A] ID[A] 80 40 5.5 V 60 30 6V 40 5V 20 5.5 V 20 4.5 V 10 5V 4.5 V 0 0 5 10 15 0 20 0 5 10 VDS[V] 15 ID=f(VDS);Tj=25C;parameter:VGS ID=f(VDS);Tj=125C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 0.30 20 VDS[V] 0.23 5.5 V 6V 7V 0.22 6.5 V 0.28 0.21 0.20 10 V 0.19 20 V 0.18 0.26 0.17 RDS(on)[] RDS(on)[] 0.16 0.24 0.22 0.15 0.14 98% 0.13 typ 0.12 0.11 0.10 0.09 0.20 0.08 0.07 0.06 0.18 0 20 40 60 80 0.05 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[C] RDS(on)=f(Tj);ID=9.7A;VGS=10V 8 Rev.2.1,2020-01-29 600VCoolMOSC7PowerDevice IPA60R099C7 Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 140 12 120 V 120 400 V 10 25 C 100 8 ID[A] VGS[V] 80 60 6 150 C 4 40 2 20 0 0 2 4 6 8 10 0 12 0 10 VGS[V] 20 30 40 50 125 150 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=9.7Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 2 10 100 80 101 125 C 25 C IF[A] EAS[mJ] 60 40 0 10 20 10-1 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 0 25 50 VSD[V] 100 Tj[C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=5.0A;VDD=50V 9 Rev.2.1,2020-01-29 600VCoolMOSC7PowerDevice IPA60R099C7 Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 105 700 680 104 660 Ciss 103 620 C[pF] VBR(DSS)[V] 640 600 102 Coss 101 580 560 Crss 100 540 520 -60 -30 0 30 60 90 120 150 10-1 0 100 Tj[C] 200 300 400 VDS[V] VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy 6 5 Eoss[J] 4 3 2 1 0 0 100 200 300 400 VDS[V] Eoss=f(VDS) Final Data Sheet 10 Rev.2.1,2020-01-29 600VCoolMOSC7PowerDevice IPA60R099C7 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform Rg1 VDS Rg 2 IF Rg1 = Rg 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 11 ID VDS Rev.2.1,2020-01-29 600VCoolMOSC7PowerDevice IPA60R099C7 6PackageOutlines 1 2 3 DIMENSIONS A A1 A2 b b1 b2 b3 b4 c D D1 E e H L L1 oP Q MILLIMETERS MIN. MAX. 4.50 4.90 2.34 2.85 2.42 2.86 0.65 0.90 0.95 1.38 0.95 1.51 0.65 1.38 0.65 1.51 0.40 0.63 15.67 16.15 8.97 9.83 10.00 10.65 2.54 28.70 29.75 13.75 12.78 2.83 3.45 3.30 3.00 3.15 3.50 DOCUMENT NO. Z8B00003319 REVISION 10 ISSUE DATE 21.03.2019 SCALE 5:1 0 1 2 3 4 5mm EUROPEAN PROJECTION Figure1OutlinePG-TO220FullPAK,dimensionsinmm Final Data Sheet 12 Rev.2.1,2020-01-29 600VCoolMOSC7PowerDevice IPA60R099C7 7AppendixA Table11RelatedLinks * IFXCoolMOSTMC7Webpage:www.infineon.com * IFXCoolMOSTMC7applicationnote:www.infineon.com * IFXCoolMOSTMC7simulationmodel:www.infineon.com * IFXDesigntools:www.infineon.com Final Data Sheet 13 Rev.2.1,2020-01-29 600VCoolMOSC7PowerDevice IPA60R099C7 RevisionHistory IPA60R099C7 Revision:2020-01-29,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2015-08-10 Release of final version 2.1 2020-01-29 Updated package drawing, symbol ID and product validation Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munchen,Germany (c)2020InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ("Beschaffenheitsgarantie"). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer'scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer'sproductsandanyuseofthe productofInfineonTechnologiesincustomer'sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer's technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 14 Rev.2.1,2020-01-29