APTGT150DA170D1G - Microsemi Corp.

APTG

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APTGT150DA170D1 – Rev 0 January, 2004

APT website – http://www.advancedpower.com

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Absolute maximum ratings

Symbol Parameter Max ratings Unit

V

CES

Collector - Emitter Breakdown Voltage 1700 V

T

C

= 25°C 280

I

C

Continuous Collector Current T

C

= 80°C 150

I

CM

Pulsed Collector Current T

C

= 25°C 300

A

V

GE

Gate – Emitter Voltage ±20 V

P

D

Maximum Power Dissipation T

C

= 25°C 780 W

RBSOA Reverse Bias Safe Operation Area T

j

= 125°C 300A@1600V

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

1

2

3

Q2

6

7

6

7

5

4

3 2 1

VCES = 1700V

IC = 150A @ Tc = 80°C

Application

• AC and DC motor control

• Switched Mode Power Supplies

• Power Factor Correction

Features

• Trench + Field Stop IGBT

®

Technology

- Low voltage drop

- Low tail current

- Switching frequency up to 20 kHz

- Soft recovery parallel diodes

- Low diode VF

- Low leakage current

- Avalanche energy rated

- RBSOA and SCSOA rated

• Kelvin emitter for easy drive

• Low stray inductance

• High level of integration

• Kelvin emitter for easy drive

• Low stray inductance

- M5 power connectors

Benefits

• Stable temperature behavior

• Very rugged

• Direct mounting to heatsink (isolated package)

• Low junction to case thermal resistance

• Easy paralleling due to positive TC of VCEsat

Boost chopper

Trench IGBT

®

Power Module

APTG

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1

5

0

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A17

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APTGT150DA170D1 – Rev 0 January, 2004

APT website – http://www.advancedpower.com

2

-

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All ratings @ T

j

= 25°C unless otherwise specified

Electrical Characteristics

Symbol

Characteristic Test Conditions Min Typ Max Unit

BV

CES

Collector - Emitter Breakdown Voltage V

GE

= 0V, I

C

= 4mA

1700

V

I

CES

Zero Gate Voltage Collector Current V

GE

= 0V, V

CE

= 1700V 4 mA

T

j

= 25°C 2.0 2.4

V

CE(on)

Collector Emitter on Voltage V

GE

= 15V

I

C

= 150A T

j

= 125°C 2.4 V

V

GE(th)

Gate Threshold Voltage V

GE

= V

CE

, I

C

= 6 mA 5.2 5.8 6.4 V

I

GES

Gate – Emitter Leakage Current V

GE

= 20V, V

CE

= 0V 200 nA

Dynamic Characteristics

Symbol

Characteristic Test Conditions Min Typ Max Unit

C

ies

Input Capacitance 13

C

res

Reverse Transfer Capacitance

V

GE

= 0V, V

CE

= 25V

f = 1MHz 0.45 nF

T

d(on)

Turn-on Delay Time 280

T

r

Rise Time 100

T

d(off)

Turn-off Delay Time 850

T

f

Fall Time

Inductive Switching (25°C)

V

GE

= ±15V

V

Bus

= 900V

I

C

= 150A

R

G

= 10Ω 120

ns

T

d(on)

Turn-on Delay Time 330

T

r

Rise Time 100

T

d(off)

Turn-off Delay Time 1000

T

f

Fall Time 200

ns

E

off

Turn Off Energy

Inductive Switching (125°C)

V

GE

= ±15V

V

Bus

= 900V

I

C

= 150A

R

G

= 10Ω

47 mJ

Reverse diode ratings and characteristics

Symbol

Characteristic Test Conditions Min Typ Max Unit

T

j

= 25°C 1.8 2.2

V

F

Diode Forward Voltage I

F

= 150A

V

GE

= 0V T

j

= 125°C 1.9 V

T

j

= 25°C 17.5

E

r

Reverse Recovery Energy I

F

= 150A

V

R

= 900V

di/dt =900A/µs T

j

= 125°C 35 mJ

T

j

= 25°C 37.5

Q

rr

Reverse Recovery Charge I

F

= 150A

V

R

= 900V

di/dt =900A/µs

T

j

= 125°C 62.5 µC

Thermal and package characteristics

Symbol

Characteristic Min Typ Max Unit

IGBT 0.16

R

thJC

Junction to Case Diode 0.25 °C/W

V

ISOL

RMS Isolation Voltage, any terminal to case t =1 min,

I isol<1mA, 50/60Hz 3500 V

T

J

Operating junction temperature range -40 150

T

STG

Storage Temperature Range -40 125

T

C

Operating Case Temperature -40 125

°C

For terminals M5 2 3.5

Torque Mounting torque To Heatsink M6 3 5 N.m

Wt Package Weight 180 g

APTG

T

1

5

0

D

A17

0D

1

APTGT150DA170D1 – Rev 0 January, 2004

APT website – http://www.advancedpower.com

3

-

3

Package outline

APT reserves the right to change, without notice, the specifications and information contained herein

APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522