TGF2023-10 - TriQuint - Product.Network

TGF2023-10

Apr 2011 © Rev D

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

Datasheet subject to change without notice.

Primary Applications

Product Description

Key Features

50 Watt Discrete Power GaN on SiC HEMT

Bias conditions: Vd = 28 V, Idq = 1 A, Vg = -3.6 V Typical

•Frequency Range: DC - 18 GHz

•46.7 dBm Nominal Psat at 3 GHz

•55% Maximum PAE

•17.5 dB Nominal Power Gain

•Bias: Vd = 28 - 32 V, Idq = 1 A, Vg = -3.6 V Typical

•Technology: 0.25 um Power GaN on SiC

•Chip Dimensions: 0.82 x 2.48 x 0.10 mm

The TriQuint TGF2023-10 is a discrete 10 mm

GaN on SiC HEMT which operates from DC-18

GHz. The TGF2023-10 is designed using

TriQuint’s proven 0.25um GaN production process.

This process features advanced field plate

techniques to optimize microwave power and

efficiency at high drain bias operating conditions.

The TGF2023-10 typically provides 46.7 dBm of

saturated output power with power gain of 17.8 dB

at 3 GHz. The maximum power added efficiency

is 55% which makes the TGF2023-10 appropriate

for high efficiency applications.

Lead-free and RoHS compliant

•Defense & Aerospace

•Broadband Wireless

TGF2023-10

Apr 2011 © Rev D

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

Table II

Recommended Operating Conditions

Table I

Absolute Maximum Ratings 1/

Symbol Parameter Value

Vd Drain Voltage 28 - 32 V

Idq Drain Current 1 A

Id_Drive Drain Current under RF Drive 3 A

Vg Gate Voltage -3.6 V

1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed

under “Absolute Maximum Ratings” may cause permanent damage to the device and / or affect

device lifetime. These are stress ratings only, and functional operation of the device at these

conditions is not implied.

2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed the

maximum power dissipation listed in Table IV.

Symbol Parameter Value Notes

Vd Drain Voltage 40 V 2/

Vg Gate Voltage Range -50 to 0 V

Vdg Drain-Gate Voltage 80 V

Id Drain Current 10 A 2/

Ig Gate Current 56 mA

Pin Input Continuous Wave Power 40 dBm 2/

Tch Channel Temperature 200 °C

TGF2023-10

Apr 2011 © Rev D

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

Table III

RF Characterization Table 1/

Bias: Vd = 28 V, Idq = 1000 mA, Vg = -3.6V Typical

1/ Values in this table are engineering estimates scaled from measurements on the 1.25 mm

GaN/SiC unit cell (see TGF2023-01 datasheet)

2/ Large signal equivalent output network (normalized) (see figure, pg 7)

SYMBOL PARAMETER 3 GHz 6 GHz 10 GHz 14 GHz UNITS

Power Tuned:

Psat Saturated Output

Power

46.7 46.0 45.8 44.3 dBm

PAE Power Added

Efficiency

55 53 47 38 %

Gain Power Gain 17.5 11.5 8.9 5.6 dB

Efficiency Tuned:

Psat Saturated Output

Power

45.4 44.3 45.5 44.3 dBm

PAE Power Added

Efficiency

60 60 49 39 %

Gain Power Gain 16.8 12.1 9.2 5.5 dB

SYMBOL PARAMETER 3 GHz 6 GHz 10 GHz 14 GHz UNITS

Power Tuned:

Rp 2/ Parallel Resistance 79.3 81.9 61.5 49.9 Ω·mm

Cp 2/ Parallel Capacitance 0.524 0.348 0.426 0.432 pF/mm

Efficiency Tuned:

Rp 2/ Parallel Resistance 153 171 72.1 53.1 Ω·mm

Cp 2/ Parallel Capacitance 0.426 0.372 0.414 0.472 pF/mm

TGF2023-10

Apr 2011 © Rev D

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

Table IV

Power Dissipation and Thermal Properties 1/

Parameter Test Conditions Value Notes

Maximum Power Dissipation Tbaseplate = 70 ºC Pd = 64 W

Tchannel = 200 ºC

Tm = 1.5E+6 Hrs

Thermal Resistance, θjc Vd = 28 V

Id = 1 A

Pd = 28 W

Tbaseplate = 70 ºC

θjc = 2.0 (ºC/W)

Tchannel = 126 ºC

Tm = 6.4E+8 Hrs

Thermal Resistance, θjc

Under RF Drive

Vd = 28 V

Id = 2.98 A

Pout = 46.7 dBm

Pd = 37.6 W

Tbaseplate = 70 ºC

θjc = 2.0 (ºC/W)

Tchannel = 145 ºC

Tm = 1.1E+8 Hrs

Mounting Temperature 30 Seconds 320 ºC

Storage Temperature -65 to 150 ºC

1/ Assumes eutectic attach using 1mil thick 80/20 AuSn mounted to a 10mil CuMo Carrier Plate

2/ Channel operating temperature will directly affect the device median lifetime. For maximum life, it is

recommended that channel temperatures be maintained at the lowest possible levels.

TGF2023-10

Apr 2011 © Rev D

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

Median Lifetime vs Channel Temperature

TGF2023-10

Apr 2011 © Rev D

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

MODEL

PARAMETER Vd=28V

Idq=125mA UNITS

Rg 0.78 Ω

Rs 0.13 Ω

Rd 1.28 Ω

gm 0.270 S

Cgs 1.79 pF

Ri 0.26 Ω

Cds 0.308 pF

Rds 123.6 Ω

Cgd 0.064 pF

Tau 2.78 pS

Ls 0.0058 nH

Lg -0.013 nH

Ld 0.018 nH

Rgs 8900 Ω

Rgd 1730000 Ω

Linear Model for 1.25 mm Unit GaN Cell (UGC)

Unit GaN cell (UGC)

Reference Plane

Source

Drain

Lg Rg Cdg Rd Ld

Rdg

Gate

Rgs

Cgs

gm vi

Rds Cds

TGF2023-10

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

Complete 10mm GaN HEMT Linear Model

Includes 8 UGC, 9 vias, and 16 bonding pads

Γ_load

Rp, Cp

Gate Pads Drain Pads

.s16p file

TGF2023-10

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge . Proper precautions should

be observed during handling, assembly and test.

Mechanical Drawing

Units: millimeters

Thickness: 0.100

Die x,y size tolerance: +/- 0.050

Chip edge to bond pad dimensions are shown to center of pad

Ground is backside of die

Bond Pad #1 - 8 Vg 0.154 x 0.115

Bond Pad #9 Vd 0.154 x 2.050

TGF2023-10

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge . Proper precautions should

be observed during handling, assembly and test.

Assembly Notes

Ordering Information

Component placement and adhesive attachment assembly notes:

•Vacuum pencils and/or vacuum collets are the preferred method of pick up.

•Air bridges must be avoided during placement.

•The force impact is critical during auto placement.

•Organic attachment (i.e. epoxy) can be used in low-power applications.

•Curing should be done in a convection oven; proper exhaust is a safety concern.

Reflow process assembly notes:

•Use AuSn (80/20) solder and limit exposure to temperatures above 300°C to 3-4 minutes, maximum.

•An alloy station or conveyor furnace with reducing atmosphere should be used.

•Do not use any kind of flux.

•Coefficient of thermal expansion matching is critical for long-term reliability.

•Devices must be stored in a dry nitrogen atmosphere.

Interconnect process assembly notes:

•Ball bonding is the preferred interconnect technique, except where noted on the assembly diagram.

•Force, time, and ultrasonics are critical bonding parameters.

•Aluminum wire should not be used.

•Devices with small pad sizes should be bonded with 0.0007-inch wire.

Part ECCN Package Style

TGF2023-10 3A001.b.3.b GaN on SiC Die