© 2017 IXYS All rights reserved 1 - 7
20170614f
MTI145WX100GD
IXYS reserves the right to change limits, test conditions and dimensions.
Package: ISOPLUS-DIL®
• High level of integration
• RoHS compliant
• High current capability
• Aux. Terminals
for MOSFET control
• Terminals for soldering or welding
connections
• Space and weight savings
Part number
MTI145WX100GD
Applications:
AC drives
• in automobiles
− electric power steering
− starter generator
• in industrial vehicles
− propulsion drives
− fork lift drives
• in battery supplied equipment
Features / Advantages:
• MOSFETs in trench technology:
− low RDSon
− optimized intrinsic reverse diode
• Package:
− high level of integration
− high current capability
− aux. terminals for MOSFET control
− terminals for soldering or welding
connections
− isolated DCB ceramic base plate
with optimized heat transfer
• Space and weight savings
VDSS = 100 V
ID25 = 190 A
RDSon typ. = 1.7 mW
Three phase full Bridge
with Trench MOSFETs
in DCB-isolated high-current package
S2
L3
G2
S1
G1
S3
G3
S4
G4
S5
G5
S6
G6
L3+
L2L1
L1+ L2+
L3-L1- L2-
Terms & Conditions of usage
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of
the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly
notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales
office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Surface Mount Device
© 2017 IXYS All rights reserved 2 - 7
20170614f
MTI145WX100GD
IXYS reserves the right to change limits, test conditions and dimensions.
MOSFETs Ratings
Symbol Definitions Conditions min. typ. max. Unit
VDSS drain source breakdown voltage TVJ = 25°C to 150°C 100 V
VGS
VGSM
gate source voltage
max. transient gate
source
voltage
±15
±20
V
V
ID25
ID90
continuous drain current TC = 25°C
TC = 90°C
190
145
A
A
RDS(on) 1) static drain source on resistance on chip level at TVJ = 25°C
ID = 100 A; VGS = 10 V TVJ = 125°C
1.7
2.9
2.2 mW
mW
VGS(th) gate threshold voltage ID = 275 µA; VDS = VGS TVJ = 25°C 2.0 2.7 3.5 V
IDSS drain source leakage current VDS = VDSS; VGS = 0 V TVJ = 25°C
TVJ = 125°C 10
1
100
µA
µA
IGSS gate source leakage current VGS = ±20 V; VDS = 0 V 500 nA
RGgate resistance on chip level 1.9 W
Ciss
Coss
Crss
input capacitance
output capacitance
reverse transfer capacitance
VGS = 0 V; VDS = 50 V; f = 1 Mhz
11.1
1.94
70
nF
nF
pF
Qg
Qgs
Qgd
total gate charge
gate source charge
gate drain (Miller) charge
VGS = 10 V; VDS = 50 V; ID = 100 A
155
48
27
nC
nC
nC
td(on)
tr
td(off)
tf
Eon
Eoff
Erec(off)
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
turn-off reverse recovery losses
inductive load TVJ = 125°C
VGS = 10 V; VDS = 50 V
ID = 100 A; RG = 27 W
135
75
600
40
200
600
36
ns
ns
ns
ns
µJ
µJ
µJ
RthJC thermal resistance junction to case 0.85 K/W
RthJH thermal resistance junction to heatsink with heat transfer paste (IXYS test setup) 1.1 1.4 K/W
1) VDS = ID·(RDS(on) + 2·RPin to Chip )
Source-Drain Diode
IF25
IF90
forward current TC = 25°C
TC = 90°C
180
105
A
A
VSD source drain voltage IF = 100 A; VGS = 0 V TVJ = 25°C 0.9 1.2 V
QRM
IRM
trr
reverse recovery charge
max. reverse recovery current
reverse recovery time
VR = 50 V; IF = 100 A TVJ = 125°C
RG = 27 W (di/dt = 1700 A/µs)
2
54
60
µC
A
ns
© 2017 IXYS All rights reserved 3 - 7
20170614f
MTI145WX100GD
IXYS reserves the right to change limits, test conditions and dimensions.
Part number
M = MOSFET
T = Trench
I = Infineon Trench
145 = Current Rating [A]
WX = 6-Pack with separated Phase Legs
100 = Reverse Voltage [V]
GD = ISOPLUS-DIL
Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code
Standard MTI145WX100GD-SMD MTI145WX100GD Tube 13 518023
XXXXXXXXXXXX
yywwC
DCB
backside
YYYYYY
Date Code
Assembly Line
Type Number
Assembly Code
Package ISOPLUS-DIL® Ratings
Symbol Definitions Conditions min. typ. max. Unit
IRMS RMS current per pin in main current paths
(L1+...L3+, L1-...L3-, L1...L3)
may be additionally limited by external connections
(PCB tracks)
2 pins for output L1, L2, L3
75 A
Tstg storage temperature -55 125 °C
Top operation temperature -55 150 °C
TVJ virtual junction temperature -55 175 °C
Weight 13 g
FCmounting force with clip 50 250 N
VISOL isolation voltage t = 1 second 50/60 Hz, RMS, IISOL < 1 mA 1200 V
t = 1 minute 1000 V
Rpin-chip resistance terminal to chip VDS = ID·(RDS(on) + 2·Rpin to chip) 0.5 mW
CPcoupling capacity between shorted pins and back side metallization 160 pF
© 2017 IXYS All rights reserved 4 - 7
20170614f
MTI145WX100GD
IXYS reserves the right to change limits, test conditions and dimensions.
Outlines ISOPLUS-DIL®
S2
L3
G2
S1
G1
S3
G3
S4
G4
S5
G5
S6
G6
L3+
L2L1
L1+ L2+
L3-L1- L2-
© 2017 IXYS All rights reserved 5 - 7
20170614f
MTI145WX100GD
IXYS reserves the right to change limits, test conditions and dimensions.
-25 0 25 50 75 100 125 150 175
0.0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
5
0.0 0.2 0.4 0.6 0.8 1.0
0
100
200
300
0.0 0.5 1.0 1.5 2.0
0
100
200
300
23456
0
100
200
300
5.5 V
-40 0 40 80 120 160
0.8
0.9
1.0
1.1
1.2
6 V
0 100 200 300 400
0
1
2
3
5 V
5.5 V
5 V
R
DS(on)
5.5 V
5 V
6 V
6.5 V
T
J
= 125°C
6 V
TJ [°C]
VDSS
[V]
Fig.1 Drain source breakdown voltage
VDSS vs. junction temperature TVJ
VGS [V]
ID
[A]
Fig. 2 Typ. transfer characteristics
VDS [V]
ID
[A]
Fig. 3 Typ. output characteristics
on die level
ID
[A]
VDS [V]
Fig. 4 Typ. output characteristics
on die level
RDS(on)
norm.
TJ [°C]
Fig.5 Drain source on-state resistance RDS(on)
vs. junction temperature TVJ
, on die level
R
DS(on)
normalized
ID [A]
Fig. 6 Drain source on-state resistance
RDS(on) versus ID, on die level
RDS(on)
norm.
RDS(on)
[mΩ]
V
GS
= 10 V
I
D
= 38 A
I
DSS
= 1 mA
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
7 V
10 V
15 V
20 V
normalized
V
DS
= 25 V
V
GS
=
20 V
15 V
10 V
7 V
6.5 V
V
G S
=
20 V
15 V
10 V
7 V
6.5 V
© 2017 IXYS All rights reserved 6 - 7
20170614f
MTI145WX100GD
IXYS reserves the right to change limits, test conditions and dimensions.
0 20 40 60 80 100 120 140 160
0
2
4
6
8
10
0 40 80 120 160 200
0
50
100
150
200
250
300
0
40
80
120
160
200
240
0 40 80 120 160 200
0.0
0.4
0.8
1.2
1.6
0
200
400
600
800
10 20 30 40 50 60 70 80 90 100
0.0
0.2
0.4
0.6
0.8
1.0
0
100
200
300
400
500
20 40 60 80 100
0.0
0.4
0.8
1.2
1.6
2.0
0
400
800
1200
1600
2000
0 20 40 60 80 100 120 140 160 180
0
50
100
150
200
250
QG [nC]
VGS
[V]
Fig.7 Typical turn on gate charge Fig. 8 Drain current ID vs. case temperature TC
(Chip capability)
Eon
[µJ]
ID [A]
t
[ns]
Fig. 9 Typ. turn-on energy and switching times
versus drain current, inductive switching
t
r
E
on
t
d(on)
E
off
t
f
t
d(off)
Eoff
[mJ]
ID [A]
t
[ns]
Fig. 10 Typ. turn-off energy and switching times
versus drain-current, inductive switching
t
r
E
on
t
d(on)
Eon
[mJ]
t
[ns]
RG [Ω]
Fig. 11 Typ. turn-on energy and switching times
versus gate resistor, inductive switching
RG [Ω]
E
off
t
d(off)
t
f
t
[ns]
Eoff
[mJ]
Fig. 12 Typ. turn-off energy and switching times
versus gate resistor, inductive switching
TC [°C]
ID
[A]
E
rec(off)
E
rec(off)
x10
I
D
= 100 A
T
VJ
= 25°C
V
DS
= 20 V
V
DS
= 40 V
T
VJ
= 175°C
V
DS
= 50 V
V
GS
= 0/10 V
R
G
= 27 Ω
T
VJ
= 125°C V
DS
= 50 V
V
GS
= 10/0 V
R
G
= 27 Ω
T
VJ
= 125°C
V
DS
= 50 V
V
GS
= 0/10 V
I
D
= 100 A
T
VJ
= 125°C
V
DS
= 50 V
V
GS
= 0/10 V
I
D
= 100 A
T
VJ
= 125°C
© 2017 IXYS All rights reserved 7 - 7
20170614f
MTI145WX100GD
IXYS reserves the right to change limits, test conditions and dimensions.
0 400 800 1200 1600 2000
0.4
0.8
1.2
1.6
2.0
0 400 800 1200 1600 2000
0
10
20
30
40
50
60
20
30
40
50
60
70
80
0.5 0.6 0.7 0.8 0.9 1.0
0
100
200
300
0.001 0.01 0.1 1 10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
IRM
[A]
trr
[ns]
di/dt [A/µs]
Fig. 13 Typ. reverse recovery characteristics
270 Ω
82 Ω
270 Ω
27 Ω
27 Ω
82 Ω
I
RM
t
rr
Qrr
[nC]
Fig. 14 Typ. reverse recovery characteristics
VSD [V]
IS
[A]
Fig.15 Source current IS vs. source drain voltage
VSD (body diode) on die level
t [s]
ZthJH
[K/W]
Fig. 16 Typ. thermal impedance junction to
heatsink ZthJH with heat transfer paste
(IXYS test setup)
di/dt [A/µs]
270 Ω
27 Ω
82 Ω
T
VJ
= -25°C
25°C
125°C
150°C
I
F
= 100A
V
DS
= 50 V
T
VJ
= 125°C
I
F
= 100 A
V
R
= 50 V
T
VJ
= 125°C
