MTI145WX100GD Three phase full Bridge VDSS = 100 V ID25 = 190 A RDSon typ. = 1.7 mW with Trench MOSFETs in DCB-isolated high-current package Part number MTI145WX100GD L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G2 G4 G6 S2 S4 S6 L1- L2- L3+ Surface Mount Device L3 L3- Features / Advantages: Applications: Package: ISOPLUS-DIL(R) * MOSFETs in trench technology: -- low RDSon -- optimized intrinsic reverse diode * Package: -- high level of integration -- high current capability -- aux. terminals for MOSFET control -- terminals for soldering or welding connections -- isolated DCB ceramic base plate with optimized heat transfer * Space and weight savings AC drives * in automobiles -- electric power steering -- starter generator * in industrial vehicles -- propulsion drives -- fork lift drives * in battery supplied equipment * * * * High level of integration RoHS compliant High current capability Aux. Terminals for MOSFET control * Terminals for soldering or welding connections * Space and weight savings Terms & Conditions of usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2017 IXYS All rights reserved 20170614f 1-7 MTI145WX100GD MOSFETs Ratings Symbol Definitions Conditions min. VDSS drain source breakdown voltage VGS VGSM gate source voltage max. transient gate source voltage ID25 ID90 continuous drain current RDS(on) 1) static drain source on resistance on chip level at ID = 100 A; VGS = 10 V TVJ = 25C TVJ = 125C VGS(th) gate threshold voltage ID = 275 A; VDS = VGS TVJ = 25C IDSS drain source leakage current VDS = VDSS; VGS = 0 V TVJ = 25C TVJ = 125C IGSS gate source leakage current VGS = 20 V; VDS = 0 V RG gate resistance on chip level Ciss Coss Crss input capacitance output capacitance reverse transfer capacitance Qg Qgs Qgd total gate charge gate source charge gate drain (Miller) charge td(on) tr td(off) tf turn-on delay time current rise time turn-off delay time current fall time Eon Eoff Erec(off) turn-on energy per pulse turn-off energy per pulse turn-off reverse recovery losses RthJC thermal resistance junction to case RthJH thermal resistance junction to heatsink typ. max. Unit 100 V 15 20 V V 190 145 A A 1.7 2.9 2.2 mW mW 2.7 3.5 V 10 1 100 A A 500 nA TVJ = 25C to 150C TC = 25C TC = 90C 2.0 1.9 W VGS = 0 V; VDS = 50 V; f = 1 Mhz 11.1 1.94 70 nF nF pF VGS = 10 V; VDS = 50 V; ID = 100 A 155 48 27 nC nC nC 135 75 600 40 ns ns ns ns 200 600 36 J J J inductive load VGS = 10 V; VDS = 50 V ID = 100 A; RG = 27 W TVJ = 125C with heat transfer paste (IXYS test setup) 1) 1.1 0.85 K/W 1.4 K/W 180 105 A A 1.2 V VDS = ID*(RDS(on) + 2*RPin to Chip ) Source-Drain Diode IF25 IF90 forward current VSD source drain voltage IF = 100 A; VGS = 0 V TVJ = 25C QRM IRM trr reverse recovery charge max. reverse recovery current reverse recovery time VR = 50 V; IF = 100 A RG = 27 W (di/dt = 1700 A/s) TVJ = 125C TC = 25C TC = 90C IXYS reserves the right to change limits, test conditions and dimensions. (c) 2017 IXYS All rights reserved 0.9 2 54 60 C A ns 20170614f 2-7 MTI145WX100GD Package ISOPLUS-DIL(R) Ratings Symbol Definitions Conditions min. IRMS RMS current per pin in main current paths (L1+...L3+, L1-...L3-, L1...L3) may be additionally limited by external connections (PCB tracks) 2 pins for output L1, L2, L3 Tstg storage temperature Top operation temperature TVJ virtual junction temperature -55 typ. max. Unit 75 A -55 125 C -55 150 C 175 C 250 N Weight 13 FC mounting force with clip VISOL isolation voltage 50 t = 1 second t = 1 minute 50/60 Hz, RMS, IISOL < 1 mA Rpin-chip resistance terminal to chip VDS = ID*(RDS(on) + 2*Rpin to chip) CP coupling capacity between shorted pins and back side metallization Assembly Line Date Code Type Number XXXXXXXXXXXX YYYYYY 1200 V 1000 V 0.5 mW 160 pF Part number DCB backside yywwC g M T I 145 WX 100 GD = MOSFET = Trench = Infineon Trench = Current Rating [A] = 6-Pack with separated Phase Legs = Reverse Voltage [V] = ISOPLUS-DIL Assembly Code Ordering Part Name Marking on Product Standard MTI145WX100GD-SMD MTI145WX100GD IXYS reserves the right to change limits, test conditions and dimensions. (c) 2017 IXYS All rights reserved Delivering Mode Base Qty Ordering Code Tube 13 518023 20170614f 3-7 MTI145WX100GD Outlines ISOPLUS-DIL(R) L1+ L2+ G1 G3 G5 S1 S3 S5 L1 G2 S2 G4 G6 S4 S6 L1- IXYS reserves the right to change limits, test conditions and dimensions. (c) 2017 IXYS All rights reserved L2 L2- L3+ L3 L3- 20170614f 4-7 MTI145WX100GD 300 1.2 VDS = 25 V IDSS = 1 mA 1.1 VDSS 200 normalized ID 1.0 [A] [V] TVJ = 125C 100 0.9 TVJ = 25C 0.8 -40 0 0 40 80 120 160 2 3 ID 6V VG S = 20 V 15 V 10 V 7V 6.5 V 6V VGS = 6 5.5 V ID 200 5V 5.5 V 20 V 15 V 10 V 7V 6.5 V 300 200 5V [A] [A] 100 100 TVJ = 25C TVJ = 125C 0 0 0.0 0.2 0.4 0.6 VDS [V] 0.8 0.0 1.0 1.0 1.5 5 5V 3 2.0 4 1.5 3 RDS(on) normalized 1.0 RDS(on) 2 RDS(on) RDS(on) TJ = 125C norm. 5.5 V 2 [m] norm. 6V 6.5 V 1 15 V 20 V 1 0.5 0.0 -25 0 0 25 2.0 Fig. 4 Typ. output characteristics on die level VGS = 10 V ID = 38 A RDS(on) 0.5 VDS [V] Fig. 3 Typ. output characteristics on die level 2.5 5 Fig. 2 Typ. transfer characteristics Fig.1 Drain source breakdown voltage VDSS vs. junction temperature TVJ 300 4 VGS [V] TJ [C] 50 75 100 125 150 175 TJ [C] Fig.5 Drain source on-state resistance RDS(on) vs. junction temperature TVJ , on die level IXYS reserves the right to change limits, test conditions and dimensions. (c) 2017 IXYS All rights reserved 7V 10 V 0 0 100 200 300 400 ID [A] Fig. 6 Drain source on-state resistance RDS(on) versus ID, on die level 20170614f 5-7 MTI145WX100GD 250 10 ID = 100 A TVJ = 175C VDS = 20 V TVJ = 25C 200 8 VDS = 40 V 150 VGS 6 [V] 4 [A] 100 2 50 ID 0 0 0 20 40 60 80 100 120 140 0 160 20 40 60 80 100 120 140 160 180 TC [C] QG [nC] Fig. 8 Drain current ID vs. case temperature TC Fig.7 Typical turn on gate charge (Chip capability) 300 240 VDS = 50 V VGS = 0/10 V 250 td(on) TVJ = 125C 200 1.2 150 t Eoff tr Eon [ns] [mJ] 100 120 td(off) VDS = 50 V VGS = 10/0 V 160 Eon [J] 800 200 27 RG = 1.6 RG = 0.8 t 27 400 TVJ = 125C [ns] 80 0.4 50 200 Eoff 40 Erec(off) 0 0 0 40 80 120 160 tf 0.0 0 200 40 80 Fig. 9 Typ. turn-on energy and switching times versus drain current, inductive switching 1.0 Eon 160 0 200 Fig. 10 Typ. turn-off energy and switching times versus drain-current, inductive switching 500 td(on) VDS = 50 V VGS = 0/10 V ID 120 ID [A] ID [A] 0.8 600 2.0 400 = 100 A 1.6 t TVJ = 125C 0.6 300 [mJ] [ns] 0.4 Eoff td(off) 2000 VDS = 50 V VGS = 0/10 V ID 1600 = 100 A TVJ = 125C t 1.2 1200 [ns] [mJ] 200 0.8 100 0.4 0 0.0 800 tr Eoff 0.2 Eon 0.0 10 tf Erec(off) x10 20 30 40 50 60 70 80 90 100 RG [] Fig. 11 Typ. turn-on energy and switching times versus gate resistor, inductive switching IXYS reserves the right to change limits, test conditions and dimensions. (c) 2017 IXYS All rights reserved 400 0 20 40 60 80 100 RG [] Fig. 12 Typ. turn-off energy and switching times versus gate resistor, inductive switching 20170614f 6-7 MTI145WX100GD 60 80 50 IRM 270 40 27 IF = 100A VDS = 50 V TVJ = 125C 70 27 60 trr 82 30 [A] 50 1.6 trr [ns] 82 20 40 Qrr 1.2 82 [nC] IRM 10 27 IF = 100 A VR = 50 V TVJ = 125C 2.0 0.8 30 270 270 0 0 400 800 1200 1600 20 2000 0.4 0 400 di/dt [A/s] 800 1200 1600 2000 di/dt [A/s] Fig. 14 Typ. reverse recovery characteristics Fig. 13 Typ. reverse recovery characteristics 300 1.2 1.0 TVJ= -25C 25C 125C 150C 200 IS 0.8 ZthJH 0.6 [A] [K/W] 100 0.4 0.2 0 0.5 0.6 0.7 0.8 0.9 1.0 VSD [V] Fig.15 Source current IS vs. source drain voltage VSD (body diode) on die level IXYS reserves the right to change limits, test conditions and dimensions. (c) 2017 IXYS All rights reserved 0.0 0.001 0.01 0.1 1 10 t [s] Fig. 16 Typ. thermal impedance junction to heatsink ZthJH with heat transfer paste (IXYS test setup) 20170614f 7-7