C5D50065D VRRM Silicon Carbide Schottky Diode Z-Rec(R) Rectifier IF (TC=130C) = 50 A = 110 nC Package 650-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF TO-247-3 Benefits * * * * * 650 V Qc Features * * * * * * * = Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications * * * * * Solar Inverters Motor Drives EV Chargers UPS Automotive Part Number Package Marking C5D50065D TO-247-3 C5D50065 Maximum Ratings (TC = 25C unless otherwise specified) Symbol Parameter Unit Test Conditions Note VRRM Repetitive Peak Reverse Voltage 650 V VRSM Surge Peak Reverse Voltage 650 V VDC DC Peak Blocking Voltage 650 V Continuous Forward Current 100 50 46 A TC=25C TC=130C TC=135C IFRM Repetitive Peak Forward Surge Current 153 106 A TC=25C, tP=10 ms, Half Sine Pulse TC=110C, tP=10 ms, Half Sine Pulse IFSM Non-Repetitive Forward Surge Current 400 330 A TC=25C, tP=10 ms, Half Sine Pulse TC=110C, tP=10 ms, Half Sine Pulse Fig. 8 IF,Max Non-Repetitive Peak Forward Current 2000 1600 A TC=25C, tP=10 ms, Pulse TC=110C, tP=10 ms, Pulse Fig. 8 Power Dissipation 300 130 W TC=25C TC=110C Fig. 4 i2t value (Per Leg) 800 545 A2s TC=25C, tP=10 ms TC=110C, tP=10 ms -55 to +175 C 1 8.8 Nm lbf-in IF Ptot i2dt TJ , Tstg Operating Junction and Storage Temperature TO-247 Mounting Torque 1 Value C5D50065D Rev. B, 05-2017 M3 Screw 6-32 Screw Fig. 3 Electrical Characteristics Symbol VF Parameter Forward Voltage IR Reverse Current QC Total Capacitive Charge C EC Typ. Max. 1.5 1.25 1.8 1.8 1.3 2.2 50 4 500 200 6 1000 Unit Test Conditions Note IF = 50 A TJ=25C IF = 25 A TJ=25C V Fig. 1 IF = 50 A TJ=175C IF = 25 A TJ=175C VR = 650 V , TJ=25C VR = 400 V , TJ=25C A Fig. 2 VR = 650 V , TJ=175C VR = 400 V , TJ=175C 110 nC VR = 400 V, IF = 50 A di/dt = 500 A/s TJ = 25C Fig. 5 Total Capacitance 1970 200 180 pF VR = 0 V, TJ = 25C, f = 1 MHz VR = 200 V, TJ = 25C, f = 1 MHz VR = 400 V, TJ = 25C, f = 1 MHz Fig. 6 Capacitance Stored Energy 16.5 J VR = 400 V Fig. 7 Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RJC Parameter Thermal Resistance from Junction to Case Typ. Unit 0.5 C/W Typical Performance 100 0.45 ReverseILeakage ReverseCurrent, Voltage I(mA) RR (mA) R 0.40 IFFoward ForwardCurrent, Current I(A) F (A) 75 TJ = 175 C TJ = 125 C 50 TJ = 75 C TJ = 25 C 25 TJ = -55 C 0 TJ = 175 C 0.30 0.25 TJ = 125 C 0.20 TJ = 75 C 0.15 TJ = 25 C 0.10 TJ = -55 C 0.05 0.00 0 0.5 1 1.5 2 2.5 3 FowardVoltage Voltage, V(V) VF Forward F (V) Figure 1. Forward Characteristics 2 0.35 C5D50065D Rev. B, 05-2017 3.5 4 0 100 200 300 400 500 Reverse Voltage Voltage, VR (V) VR Reverse (V) Figure 2. Reverse Characteristics 600 700 Typical Performance 350 350 325 325 300 300 200 200 IF (A) 275 275 250 250 225 225 PTOT (W) 250 250 Duty Duty Duty Duty Duty Power Dissipation (W) 10% 20% 30% 50% 70% DC 300 300 150 150 100 100 200 200 175 175 150 150 125 125 100 100 75 75 50 50 50 50 25 25 00 25 50 75 100 125 150 175 25 50 75 100 125 150 175 00 25 50 25 50 TC (C) Figure 3. Current Derating 150 175 2000 2000 Conditions: = 25 CC TTJ =25 Conditions: Conditions: Figure 6. Power Derating TJ = 25 C T =25 C FFtest ==1 1 MHz MHz 25 mV VVtest ==25mV Conditions: J 1800 1800 J 100 100 test 1600 1600 test 1400 1400 80 80 Capacitance (pF) 60 60 C (pF) Q (nC) 75 100 125 (C) TcTCase Temperature (C) C Figure 4. Power Derating 120 120 rr Capacitive Charge, QC (nC) 75 100 125 150 175 40 40 1200 1200 1000 1000 800 800 600 600 400 400 20 20 200 200 00 0 50 100 150 200 250 300 350 400 0 50 100 150 200 250 300 350 400 00 0.1 1 10 100 1000 ReverseVVoltage, (V)VR (V) R Reverse VRVoltage, (V) VR (V) Figure 5. Recovery Charge vs. Reverse Voltage 3 C5D50065D Rev. B, 05-2017 0.1 1 10 100 Figure 6. Typical Capacitance vs. Reverse Voltage 1000 Typical Performance 50 10000 10000 45 35 1000 1000 IIFSM(A) (A) FSM 30 25 C Capacitance StoredEEnergy, (mJ) EC (J) 40 20 TJ = 25C T = 110C J 100 100 15 10 5 0 0 100 200 300 400 500 600 10 10 1.E-05 1.E-04 1.E-03 1.E-02 1E-05 1E-04 1E-03 1E-02 tp(s) 700 ReverseVVoltage, (V) VR (V) R tp (s) Figure 7. Typical Capacitance Stored Energy Figure 8. Non-Repetitive Peak Forward Surge Current versus Pulse Duration (sinusoidal waveform) (C/W) Thermal Junction To Resistance Case Impedance, ZthJC (oC/W) 1 0.5 0.3 100E-3 0.1 0.05 0.02 10E-3 SinglePulse 0.01 1E-3 100E-6 1E-6 10E-6 100E-6 1E-3 Time, tp (s) T (Sec) 10E-3 Figure 9. Transient Thermal Impedance 4 C5D50065D Rev. B, 05-2017 100E-3 1 Package Dimensions ASE Advanced Package TO-247-3 Semiconductor Engineering Weihai, Inc. PACKAGE OUTLINE DWG NO. 98WHP03165A ISSUE O DATE Sep.05, 2016 e POS Inches Min Millimeters Max A .190 .205 4.83 5.21 .090 .100 2.29 2.54 A2 .075 .085 1.91 2.16 b .042 .052 1.07 1.33 b1 .075 .095 1.91 2.41 b3 .113 .133 2.87 3.38 c .022 .027 0.55 0.68 D .819 .831 20.80 21.10 D1 .640 .695 16.25 17.65 D2 .037 .049 0.95 1.25 E .620 .635 15.75 16.13 E1 .516 .557 13.10 14.15 E2 .145 .201 3.68 5.10 E3 .039 .075 1.00 1.90 E4 .487 .529 12.38 13.43 .214 BSC 5.44 BSC L .780 .800 L1 .161 .173 N OP 1 - GATE 2 - DRAIN (COLLECTOR) 3 - SOURCE (EMITTER) 4 - DRAIN (COLLECTOR) TITLE: TO-247 3LD, Only For Cree COMPANY ASE Weihai SHEET 1 OF 3 Recommended Solder Pad Layout 19.81 20.32 4.10 4.40 3.51 3.65 3 .138 .144 Q .216 .236 5.49 6.00 S .238 .248 6.04 6.30 T 17.5 REF W 3.5 REF X 4 REF Part Number Package Marking C5D50065D TO-247-3 C5D50065 all units are in inches TO-247-3 Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering 5 C5D50065D Rev. B, 05-2017 Max A1 e NOTE ; 1. ALL METAL SURFACES: TIN PLATED,EXCEPT AREA OF CUT 2. DIMENSIONING & TOLERANCEING CONFIRM TO ASME Y14.5M-1994. 3. ALL DIMENSIONS ARE IN MILLIMETERS. ANGLES ARE IN DEGREES. 4. THIS DRAWING WILL MEET ALL DIMENSIONS REQUIREMENT OF JEDEC outlines TO-247 AD. Min Diode Model Diode Model CSD10060 Vf Vf T T==VTV+T+If*R If*RT T V -3 0.9947+(T J* -0.0013) VTT==0.92 + (Tj * -1.35*10 ) -5 -3 R 0.0093+(T ) J* 7.00*10 RT =0.052 + (T * 0.29*10 ) T= j Note: Tj = Diode Junction Temperature In Degrees Celsius, valid from 25C to 175C VT RT Notes * RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfpseed representative or from the Product Ecology section of our website at http:// www.wolfspeed.com/Power/Tools-and-Support/Product-Ecology. * REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. * This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links * * * Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2 SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Copyright (c) 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 C5D50065D Rev. B, 05-2017 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power