R08DS0072EJ0400 Rev.4.00 Page 1 of 12
Jan 9, 2013
PS2801C-1
PS2801C-4
PIN CONNECTION
(Top View)
1. Anode
2. Cathode
3. Emitter
4. Collector
43
12
12345678
16 15 1413 12 11 10 9
Anode
Cathode
Emitter
Collector
1. 3. 5. 7.
2. 4. 6. 8.
9. 11. 13. 15.
10. 12. 14. 16.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
Data Sheet
PS2801C-1, PS2801C-4
HIGH ISOLATION VOLTAGE SSOP PHOTOCOUPLER
DESCRIPTION
These products are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon
phototransistor in a plastic SSOP for high density applications to realize an excellent cost performance.
This package has shield effect to cut off ambient light.
FEATURES
• High isolati on vol t a ge (BV = 2 500 Vr.m.s.)
• Small and thin package (4, 16-pin SSOP, Pin pitch 1.27 mm)
• High collector to emitter voltage (VCEO : 80 V)
• Ordering number of tape product: PS2801C-1-F3, PS2801C-4-F3
• Pb-Free product
• Safety standards
• UL approved: File No. E72422
• CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 6095 0)
• BSI approved (BS EN 60065, BS EN 60950) (PS2801C-1 only)
• DIN EN 60747-5-5 (VDE 0884-5) approved (Option)
APPLICATIONS
• Programmable logic controllers
• Measuring instruments
• Power supply
• Hybrid IC
R08DS0072EJ0400
Rev.4.00
Jan 9, 2013
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PS2801C-1, PS2801C-4e
R08DS0072EJ0400 Rev.4.00 Page 2 of 12
Jan 9, 2013
PACKAGE DIMENSIONS (UNIT: mm)
M
0.12
0.4±0.1
1.27
2.0±0.1
0.1±0.1
PS2801C-1 PS2801C-4
4.4
7.0±0.3
0.5±0.3
0.15
+0.10
–0.05
2.7±0.3
10.3±0.3
4.4
7.0±0.3
0.5±0.3
0.15
+0.10
–0.05
1.27
2.0
+0.3
–0.2
0.1±0.1
M
0.12
0.40
+0.10
–0.05
43
12
16 9
18
PHOTOCOUPLER CONSTRUCTION
Parameter Unit (MIN.)
Air Distance 4.5 mm
Outer Creepage Distance 4.5 mm
Inner Creepage Distance 2.5 mm
Isolation Distance 0.1 mm
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PS2801C-1, PS2801C-4e
R08DS0072EJ0400 Rev.4.00 Page 3 of 12
Jan 9, 2013
MARKING EXAMPLE
PS2801C-1
Made in Taiwan
Made in Japan
Made in Taiwan
Halogen free
Made in Japan
Halogen free
" " (Vertical bar)
:Made in Taiwan & Halogen free
" " (Horizontal bar)
:Made in Japan & Halogen free
" " (Square)
:Made in Japan
Company initial
Week Assembled
Year Assembled (Last 1 digit)
Last 2 numbers of type
No. : 1C
Assembly Lot
301
PS2801C-4
Country Assembled
Assembly Lot
No. 1 pin
Mark
PS2801C-4
NL301
301
Year Assembled
(Last 1 Digit)
LN
Rank Code
In-house Code
(L: Pb-Free)
Week Assembled
R
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PS2801C-1, PS2801C-4e
R08DS0072EJ0400 Rev.4.00 Page 4 of 12
Jan 9, 2013
ORDERING INFORMATION
Part Number Order Number Solder Plating
Specification etc. Packing Style Safety Standard
Approval Application
Part Number*1
PS2801C-1- F3 PS2801C-1- F3-A Emb ossed Ta pe 3 5 00 p cs/reel PS2801C-1
PS2801C- 4-F 3 PS2801C- 4-F 3-A Embossed Tape 2 50 0 p cs/re e l
Standard products
(UL, CSA, BSI
approved) PS2801C-4
PS2801C-1-V-F 3 PS2801C-1-V-F 3 -A Emb ossed Ta pe 3 5 00 p cs/reel PS2801C-1
PS2801C-4-V-F3 PS2801C-4-V-F3-A
Pb-Free
Embossed Tape 2 500 pcs/reel
DIN EN 60747-5-5
(VDE0884 -5)
Approved (Option) PS2801C-4
PS2801C-1-F 3 PS280 1C- 1Y -F3-A Embossed Tap e 3 50 0 p cs/re el Standard p ro du cts
(UL, CSA, BSI
approved)
PS2801C-1-V-F3 PS2801C-1Y-V-F3-A
Special version
(Pb-Free and
Halogen Free)
Embossed Tape 3 500 pcs/reel DIN EN 60747-5-5
(VDE0884 -5)
Approved (Option)
PS2801C-1
Note: *1. For the application of the Safety Standard, follo wing part number should be used.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Ratings Parameter Symbol PS2801C-1 PS2801C-4 Unit
Forward Current (DC) IF 30 mA/ch
Reverse Voltage VR 6 V
Power Dissipation Derating
Δ
PD/°C 0.6 0.8 mW/°C
Power Dissipation PD 60 80 mW/ch
Diode
Peak Forward Current *1 I
FP 0.5 A/ch
Collector to Emitter Voltage VCEO 80 V
Emitter to Collector Voltage VECO 5 V
Collector Current IC 30 mA/ch
Power Dissipation Derating
Δ
PC/°C 1.2 mW/°C
Transistor
Power Dissipation PC 120 mW/ch
Isolation Voltage *2 BV 2 500 Vr.m.s.
Operating Ambient Temperature TA −55 to +100 °C
Storage Temperature Tstg −55 to +150 °C
Notes: *1. PW = 100
μ
s, Duty Cycle = 1%
*2. AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output.
Pins 1-2 shorted together, 3-4 shorted together (PS2801C-1).
Pins 1-8 shorted together, 9-16 shorted together (PS2801C-4).
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PS2801C-1, PS2801C-4e
R08DS0072EJ0400 Rev.4.00 Page 5 of 12
Jan 9, 2013
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Forward Voltage VF I
F = 5 mA 1.2 1.4 V
Reverse Current IR V
R = 5 V 5
μ
A
Diode
Terminal Capacitance Ct V = 0 V, f = 1.0 MHz 10 pF
Transistor Collector to Emitter
Dark Current ICEO V
CE = 80 V, IF = 0 mA 100 nA
Current Transfer Ratio
(IC/IF) *1 CTR IF = 5 mA, VCE = 5 V 50 400 %
Collector Saturation
Voltage VCE (sat) I
F = 10 mA, IC = 2 mA 0.13 0.3 V
Isolation Resistance RI-O V
I-O = 1.0 kVDC 1011 Ω
Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz 0.4 pF
Rise Time *2 t
r 5
Fall Time *2 t
f 7
Turn-on Time *2 t
on 10
Coupled
Turn-off Time *2 t
off
VCC = 5 V, IC = 2 mA, RL = 100 Ω
7
μ
s
Notes: *1. CTR rank
PS2801C-1
N : 50 to 400 (%)
P : 150 to 300 (%)
L : 100 to 300 (%)
M : 100 to 400 (%)
PS2801C-4
N : 50 to 400 (%)
M : 100 to 400 (%)
*2. Test circuit for switching time
Input
Output
90%
10%
t
r
t
d
t
f
t
s
t
on
t
off
V
CC
V
OUT
R
L
= 100 Ω
I
F
50 Ω
Pulse Input
PW = 100 s
Duty Cycle = 1/10
μ
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PS2801C-1, PS2801C-4e
R08DS0072EJ0400 Rev.4.00 Page 6 of 12
Jan 9, 2013
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
100
80
60
40
20
0
PS2801C-1
PS2801C-4
0.8 mW/°C
0.6 mW/°C
0 25 50 75 100 125
Ambient Temperature T
A
(°C)
Diode Power Dissipation P
D
(mW)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
160
120
80
40
0
PS2801C-1
PS2801C-4
1.2 mW/°C
0 25 50 75 100 125
Ambient Temperature T
A
(°C)
Transistor Power Dissipation P
C
(mW)
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
100
1.51.41.31.21.11.00.90.80.7
50
10
5
1
0.5
0.1
0
°
C
–25
°
C
–55
°
C
+60
°
C
+25
°
C
T
A
= +100
°
C
0.05
Forward Voltage V
F
(V)
Forward Current I
F
(mA)
FORWARD CURRENT vs.
FORWARD VOLTAGE
30
25
20
15
10
5
00246810
I
F
= 10 mA
5 mA
2 mA
1 mA
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Ambient Temperature T
A
(°C)
Collector to Emitter Dark Current I
CEO
(nA)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
10 000
1 000
100
10
10 25 50 75 100
24 V
70 V
V
CE
= 80 V
Collector Saturation Voltage V
CE (sat)
(V)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
10
1
0.10 0.2 0.4 0.6 0.8 1.0
I
F
= 10 mA
5 mA
2 mA
1 mA
CTR = 200% CTR = 250%
CTR = 250%
Remark The graphs indicate nominal characteristics.
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PS2801C-1, PS2801C-4e
R08DS0072EJ0400 Rev.4.00 Page 7 of 12
Jan 9, 2013
100
10
1
0.1
10 100 1 000 10 000
tf
tr
td
ts
I
C
= 2 mA, V
CC
= 5 V,
CTR = 228%
Switching Time t ( s)
μ
Load Resistance RL (Ω)
SWITCHING TIME vs.
LOAD RESISTANCE
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
–
50
–7
5
–
25 0 25 7550 100
Ambient Temperature T
A (°C)
Normalized Current Transfer Ratio CTR
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
Normalized to 1.0
at TA = 25°C,
IF = 5 mA, VCE = 5 V
CTR = 250%
80%
400
300
200
100
0
0.01 0.1 1 10 100
V
CE
= 5 V,
n = 3
Forward Current I
F (mA)
Current Transfer Ratio CTR (%)
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
Sample A
B
C
0.1 1 10 100 1 000
R
L
= 1 kΩ
300 Ω
100 Ω
I
F
= 5 mA,
V
CE
= 5 V
5
0
–
5
–
10
–
15
–
20
–
25
FREQUENCY RESPONSE
Frequency f (kHz)
Normalized Gain Gv
1 000
100
10
11 10 100
t
d
t
s
tf
I
F
= 5 mA, V
CC
= 5 V,
CTR = 228%
tr
Load Resistance RL (kΩ)
SWITCHING TIME vs.
LOAD RESISTANCE
Switching Time t ( s)
μ
Remark The graphs indicate nominal characteristics.
PS2801C-1, PS2801C-4e
R08DS0072EJ0400 Rev.4.00 Page 8 of 12
Jan 9, 2013
TAPING SPECIFICATIONS (UNIT: mm)
Outline and Dimensions (Reel)
Tape Direction
Outline and Dimensions (Tape)
1.55±0.1
4.0±0.1
2.0±0.1
4.0±0.1
1.75±0.1
2.8 MAX.
7.55±0.1
0.3
7.5±0.1
16.0±0.3
2.85±0.1 2.3±0.1
1.5
+0.1
–0
φ
Packing: 3 500 pcs/reel
2.0±0.5
R 1.0
13.0±0.2
φ
21.0±0.8
φ
330±2.0
φ
100±1.0
φ
2.0±0.5
15.9 to 19.4
Outer edge of
flange
21.5±1.0
17.5±1.0
PS2801C-1-F3
301
R1C
301
R1C
301
R1C
301
R1C
301
R1C
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PS2801C-1, PS2801C-4e
R08DS0072EJ0400 Rev.4.00 Page 9 of 12
Jan 9, 2013
Tape Direction
PS2801C-4-F3
Outline and Dimensions (Reel)
Outline and Dimensions (Tape)
1.55±0.1
12.0±0.1
2.0±0.1
4.0±0.1
1.75±0.1
16.0±0.3
8.3±0.1
2.8 MAX.
10.7±0.1
0.3
2.3±0.1
7.5±0.1
1.5+0.1
–0
φ
Packing: 2 500 pcs/reel
2.0±0.5
R 1.0
13.0±0.2
φ
21.0±0.8
φ
330±2.0
φ
100±1.0
φ
2.0±0.5
15.9 to 19.4
Outer edge of
flange
21.5±1.0
17.5±1.0
PS2801C-1, PS2801C-4e
R08DS0072EJ0400 Rev.4.00 Page 10 of 12
Jan 9, 2013
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
• Peak reflow temperature 260°C or below (package surface temperature)
• Ti me of pe ak reflow temperature 10 seconds or less
• Time of temperature higher than 220°C 60 seconds or less
• Time to preheat temperature from 120 to 180°C 120±30 s
• Number of reflows Three
• Flux Rosin flux containing small amount of chlorine (The
flux with a maximum chlorine content of 0.2 Wt% is
recommended.)
120±30 s
(preheating)
220°C
180°C
Package Surface Temperature T (°C)
Time (s)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
to 60 s
260°C MAX.
120°C
(2) Wave soldering
• Temperature 260°C or below (molten solder temperature)
• Time 10 seconds or less
• Preheating conditions 120°C or below (package surface temperature)
• Number of times One (Allowed to be dipped in solder including plastic
mold portion.)
• Flux Rosin flux containing small amount of chlorine (The flux
with a maximum chlorine content of 0.2 Wt% is
recommended.)
(3) Soldering by Soldering Iron
• Peak Temperature (lead part temperature) 350°C or be low
• Time (each pins) 3 seconds or less
• Flux Rosin flux containing small amount of chlorine (The flux
with a maximum chlorine content of 0.2 Wt% is
recommended.)
(a) Soldering of leads should be made at th e point 1.5 to 2.0 mm from the root of the lead
(4) Cautions
• Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
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PS2801C-1, PS2801C-4e
R08DS0072EJ0400 Rev.4.00 Page 11 of 12
Jan 9, 2013
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between collector-
emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum
ratings.
3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler
Check the setting values before use, since the forward current conditions at CTR measurement differ according to
product.
When using products other than at the specified forward current, the characteristics curves may differ from the
standard curves due to CTR value variations or the like. This tendency may sometimes be obvious, especially below
IF = 1 mA.
Therefore, check the characteristics under the actual operating conditions and thoroughly take variations or the like
into consideration before use.
USAGE CAUTIONS
1. Protect against static electricity when handling.
2. Avoid storage at a high temperature and high humidity.
PS2801C-1, PS2801C-4e
R08DS0072EJ0400 Rev.4.00 Page 12 of 12
Jan 9, 2013
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT
Parameter Symbol Spec. Unit
Climatic test class (IEC 60068-1/DIN EN 60068-1) 55/100/21
Dielectric strength
maximum operating isolati on voltage
Test voltage (partial discharge test, procedure a for type test and
random test)
Upr = 1.6 × UIORM, Pd < 5 pC
UIORM
Upr
705
1 128
Vpeak
Vpeak
Test voltage (partial discharge test, procedure b for all devic es)
Upr = 1.875 × UIORM, Pd < 5 pC Upr 1 322 Vpeak
Highest permissible overvoltage UTR 6 000 Vpeak
Degree of pollution (DIN EN 60664-1 VDE0 110 Part 1) 2
Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303
Part 11)) CTI 175
Material group (DIN EN 60664-1 VDE0110 Part 1) III a
Storage temperature range Tstg −55 to + 150 °C
Operating temperature range TA −55 to +100 °C
Isolation resistance, minimum value
VIO = 500 V dc at TA = 25°C
VIO = 500 V dc at TA MAX. at least 100°C
Ris MIN.
Ris MIN.
1012
1011
Ω
Ω
Safety maximum ratings (maximum permissible in case of fault, see
thermal derating curve)
Package temperature
Current (input current IF, Psi = 0)
Power (output or total power dissipation)
Isolation resistance
VIO = 500 V dc at TA = Tsi
Tsi
Isi
Psi
Ris MIN.
150
300
500
109
°C
mA
mW
Ω
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All trademarks and registered trademarks are t he property of their respective owners.
C - 1
Revision History PS2801C-1, PS2801C-4 Data Sheet
Description
Rev. Date Page Summary
1.00 May 30, 2006 − This data sheet was released as PN10610EJ01V0DS
4.00 Jan 9, 2013 Throughout Renesas format is applied to this data sheet.
p.1 The ordering number and safety standards are revised.
p.2
PHOTOCOUPLER CONSTRUCTION is added as eac h distance of this
device.
p.3 The explanation in MARKING EXAMPLE is revised.
p.4
ORDERING INFORMATION is modified with the revision of the safety
standards.
p.5
Turn-on Time (ton) and Turn-off Time (toff) are added to the table in
ELECTRICAL CHARACTERISTICS.
p.7 The graph of LONG TERM CTR DEGRADATION is deleted from those in
TYPICAL CHARACTERISTICS.
p.8 PS2801C-1-F4 is deleted form Tape Direction image in TAPING
SPECIFICATIONS.
p.9 PS2801C-4-F4 is deleted form Tape Direction image in TAPING
SPECIFICATIONS.
p.10
The note about temperature c ondition of the recommended solder ing
conditions is deleted.
p.12
The values in SPECIFICATION OF VDE MARKS LICENSE DOCUMENT are
changed as follows.
-- Test voltage is changed from the factor, 1.5, and the value, 1058, to 1.6
and 1128, respectively.
-- Clearance distance is moved to PHOT OCOUPLER CONSTRUCTION with
changing 5.0 (min.) to 4.5 (min.).
Notice
1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
use of these circuits, software, or information.
2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics
assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
3. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or
technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or
others.
4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Renesas Electronics assumes no responsibility for any losses incurred by you or
third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product.
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the product's quality grade, as indicated below.
"Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic
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incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by Renesas Electronics.
6. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.
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malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to
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please evaluate the safety of the final products or systems manufactured by you.
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products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
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regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the
development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and
regulations and follow the procedures required by such laws and regulations.
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products.
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12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
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13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co.
,
Ltd
.
11F., Samik Lavied' or Bld
g
., 720-2 Yeoksam-Don
g
, Kan
g
nam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737
,
Fax: +82-2-558-514
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2012 Renesas Electronics Corporation. All ri
g
hts reserved
.
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