Data Sheet, Doc. No. 5SYA 1414-05 08-2013
5SNA 3600E170300
HiPak IGBT Module
VCE = 1700 V
IC = 3600 A
Ultra low-loss, rugged SPT+ chip-set
Smooth switching SPT+ chip-set for good EMC
AlSiC base-plate for high power cycling capability
AlN substrate for low thermal resistance
Maximum rated values 1)
Symbol
Conditions
min
max
Unit
VCES
VGE = 0 V, Tvj ≥ 25 °C
1700
V
IC
TC = 70 °C, Tvj = 150 °C
3600
A
ICM
tp = 1 ms
7200
A
VGES
-20
20
V
Ptot
TC = 25 °C, Tvj = 150 °C
17800
W
IF
3600
A
IFRM
tp = 1 ms
7200
A
IFSM
VR = 0 V, Tvj = 150 °C,
tp = 10 ms, half-sinewave
18000
A
tpsc
VCC = 1200 V, VCEM CHIP 1700 V
VGE 15 V, Tvj 150 °C
10
µs
Visol
1 min, f = 50 Hz
4000
V
Tvj
175
°C
Tvj(op)
-50
150
°C
TC
-50
125
°C
Tstg
-50
125
°C
Ms
Base-heatsink, M6 screws
4
6
Nm
Mt1
Main terminals, M8 screws
8
10
Mt2
Auxiliary terminals, M4 screws
2
3
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
2) For detailed mounting instructions refer to ABB Document No. 5SYA 2039
2 5SNA 3600E170300 | Doc. No. 5SYA 1414-05 08-2013
IGBT characteristic values 3)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector (-emitter) breakdown
voltage
V(BR)CES
VGE = 0 V, IC = 10 mA, Tvj = 25 °C
1700
V
Collector-emitter 4)
saturation voltage
VCE sat
IC = 3600 A, VGE = 15 V
Tvj = 25 °C
2.2
2.5
2.8
V
Tvj = 125 °C
2.7
3.0
3.3
V
Tvj = 150 °C
3.1
V
Collector cut-off current
ICES
VCE = 1700 V, VGE = 0 V
Tvj = 25 °C
0.04
1
mA
Tvj = 125 °C
30
60
mA
Tvj = 150 °C
170
mA
Gate leakage current
IGES
VCE = 0 V, VGE = 20 V, Tvj = 125 °C
-500
500
nA
Gate-emitter threshold voltage
VGE(TO)
IC = 240 mA, VCE = VGE, Tvj = 25 °C
5.3
7.3
V
Gate charge
Qge
IC = 3600 A, VCE = 900 V, VGE = -15 V ..15 V
21
µC
Input capacitance
Cies
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C
239
nF
Output capacitance
Coes
20.9
nF
Reverse transfer capacitance
Cres
9.24
nF
Turn-on delay time
td(on)
VCC = 900 V, IC = 3600 A,
RG = 0.6 , CGE = 0 nF,
VGE = 15 V,
L = 50 nH, inductive load
Tvj = 25 °C
480
ns
Tvj = 125 °C
510
ns
Tvj = 150 °C
520
ns
Rise time
tr
Tvj = 25 °C
290
ns
Tvj = 125 °C
310
ns
Tvj = 150 °C
315
ns
Turn-off delay time
td(off)
VCC = 900 V, IC = 3600 A,
RG = 0.6 , CGE = 0 nF,
VGE = 15 V,
L = 50 nH, inductive load
Tvj = 25 °C
1160
ns
Tvj = 125 °C
1260
ns
Tvj = 150 °C
1290
ns
Fall time
tf
Tvj = 25 °C
270
ns
Tvj = 125 °C
300
ns
Tvj = 150 °C
310
ns
Turn-on switching energy
Eon
VCC = 900 V, IC = 3600 A,
RG = 0.6 , CGE = 0 nF,
VGE = ±15 V,
L = 50 nH, inductive load
Tvj = 25 °C
800
mJ
Tvj = 125 °C
1100
mJ
Tvj = 150 °C
1200
mJ
Turn-off switching energy
Eoff
VCC = 900 V, IC = 3600 A,
RG = 0.6 , CGE = 0 nF,
VGE = ±15 V,
L = 50 nH, inductive load
Tvj = 25 °C
1330
mJ
Tvj = 125 °C
1600
mJ
Tvj = 150 °C
1690
mJ
Short circuit current
ISC
tpsc ≤ 10 µs, VGE = 15 V,
VCC = 1200 V,
VCEM CHIP ≤ 1700 V
Tvj = 150 °C
10000
A
3) Characteristic values according to IEC 60747 – 9
4) Collector-emitter saturation voltage is given at chip level
3 5SNA 3600E170300 | Doc. No. 5SYA 1414-05 08-2013
Diode characteristic values 5)
Parameter
Symbol
Conditions
min
typ
max
Unit
Forward voltage 6)
VF
IF = 3600 A
Tvj = 25 °C
1.85
2.2
V
Tvj = 125 °C
1.95
2.3
V
Tvj = 150 °C
1.9
V
Reverse recovery current
Irr
VCC = 900 V,
IF = 3600 A,
VGE = 15 V,
RG = 0.6 , CGE = 0 nF,
di/dt = 11.5 kA/µs
L = 50 nH, inductive load
Tvj = 25 °C
2030
A
Tvj = 125 °C
2340
A
Tvj = 150 °C
2500
A
Recovered charge
Qrr
Tvj = 25 °C
1000
µC
Tvj = 125 °C
1560
µC
Tvj = 150 °C
1820
µC
Reverse recovery time
trr
Tvj = 25 °C
900
ns
Tvj = 125 °C
1230
ns
Tvj = 150 °C
1320
ns
Reverse recovery energy
Erec
Tvj = 25 °C
710
mJ
Tvj = 125 °C
1080
mJ
Tvj = 150 °C
1260
mJ
5) Characteristic values according to IEC 60747 – 2
6) Forward voltage is given at chip level
Package properties 7)
Parameter
Symbol
Conditions
min
typ
max
Unit
IGBT thermal resistance
junction to case
Rth(j-c)IGBT
0.007
K/W
Diode thermal resistance
junction to case
Rth(j-c)DIODE
0.012
K/W
IGBT thermal resistance 2)
case to heatsink
Rth(c-s)IGBT
IGBT per switch, grease = 1W/m x K
0.009
K/W
Diode thermal resistance 2)
case to heatsink
Rth(c-s)DIODE
Diode per switch, grease = 1W/m x K
0.018
K/W
Comparative tracking index
CTI
400
Module stray inductance
Lσ CE
8
nH
Resistance, terminal-chip
RCC’+EE’
TC = 25 °C
0.055
mΩ
TC = 125 °C
0.075
TC = 150 °C
0.080
2) For detailed mounting instructions refer to ABB Document No. 5SYA 2039
Mechanical properties 7)
Parameter
Symbol
Conditions
min
typ
max
Unit
Dimensions
L x W x H
Typical
190 x 140 x 38
mm
Clearance distance in air
da
according to IEC 60664-1
and EN 50124-1
Term. to base:
23
mm
Term. to term:
19
Surface creepage distance
ds
according to IEC 60664-1
and EN 50124-1
Term. to base:
33
mm
Term. to term:
32
Mass
m
1380
g
7) Package and mechanical properties according to IEC 60747 – 15
4 5SNA 3600E170300 | Doc. No. 5SYA 1414-05 08-2013
Electrical configuration
5
79
468
2
1
3
Outline drawing 2)
Note: all dimensions are shown in millimeters
2) For detailed mounting instructions refer to ABB Document No. 5SYA 2039
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.
This product has been designed and qualified for Industrial Level.
5 5SNA 3600E170300 | Doc. No. 5SYA 1414-05 08-2013
0
1200
2400
3600
4800
6000
7200
0 1 2 3 4 5
VCE [V]
IC [A]
25 °C
125 °C
VGE = 15 V
150 °C
0
1200
2400
3600
4800
6000
7200
5 6 7 8 9 10 11 12 13 14 15
VGE [V]
IC [A]
25 °C
125 °C
VCE = VGE
150 °C
Fig. 1
Typical on-state characteristics, chip level
Fig. 2
Typical transfer characteristics, chip level
0
1200
2400
3600
4800
6000
7200
0 1 2 3 4 5
VCE [V]
IC [A]
Tvj = 25 °C
17 V
15 V
13 V
11 V
9 V
19 V
0
1200
2400
3600
4800
6000
7200
0 1 2 3 4 5 6
VCE [V]
IC [A]
Tvj = 150 °C
17 V
15 V
13 V
11 V
9 V
19 V
Fig. 3
Typical output characteristics, chip level
Fig. 4
Typical output characteristics, chip level
6 5SNA 3600E170300 | Doc. No. 5SYA 1414-05 08-2013
0
1
2
3
4
5
6
01200 2400 3600 4800 6000 7200
IC [A]
Eon, Eoff [J]
VCC = 900 V
VGE = ±15 V
RG = 0.6 ohm
L = 50 nH
Eon
Eoff
Tvj = 125 °C
Tvj = 150 °C
0
1
2
3
4
5
6
7
8
0 1 2 3 4 5
RG [ohm]
Eon, Eoff [J]
VCC = 900 V
IC = 3600 A
VGE = ±15 V
L = 50 nH
Eon
Eoff
Tvj = 125 °C
Tvj = 150 °C
Fig. 5
Typical switching energies per pulse vs. collector current
Fig. 6
Typical switching energies per pulse vs. gate resistor
0.01
0.1
1
10
01200 2400 3600 4800 6000 7200
IC [A]
td(on), tr, td(off), tf [µs]
td(off)
tf
td(on)
tr
VCC = 900 V
VGE = ±15 V
RG = 0.6 ohm
Tvj = 125 °C
L = 50 nH
0.1
1
10
0 1 2 3 4 5
RG [ohm]
td(on), tr, td(off), tf [µs]
td(off)
tf
td(on)
tr
VCC = 900 V
IC = 3600 A
VGE = ±15 V
Tvj = 125 °C
L = 50 nH
Fig. 7
Typical switching times vs. collector current
Fig. 8
Typical switching times vs. gate resistor
7 5SNA 3600E170300 | Doc. No. 5SYA 1414-05 08-2013
1
10
100
1000
0 5 10 15 20 25 30 35
Vce[V]
C [nF]
VGE = 0 V
fOSC = 1 MHz
VOSC = 50 mV
Cies
Coes
Cres
0
5
10
15
20
0 5 10 15 20
Qg [µC]
VGE [V]
IC = 3600 A
Tvj = 25 °C
VCC = 1300 V
VCC = 900 V
Fig. 9
Typical capacitances vs. collector-emitter voltage
Fig. 10
Typical gate charge characteristics
0.0
0.5
1.0
1.5
2.0
2.5
0500 1000 1500 2000
VCE [V]
ICpulse / IC
chip
module
VCC 1200 V, Tvj = 150 °C
VGE = ±15 V, RG = 0.6 ohm
Fig. 11
Turn-off safe operating area (RBSOA)
8 5SNA 3600E170300 | Doc. No. 5SYA 1414-05 08-2013
0
500
1000
1500
2000
2500
01200 2400 3600 4800 6000 7200
IF [A]
Erec [mJ], Irr [A], Qrr [µC]
Irr
Qrr
Erec
VCC = 900 V
VGE = ±15 V
RG = 0.6 ohm
L = 50 nH
Tvj = 125 °C
Tvj = 150 °C
0
500
1000
1500
2000
2500
3000
2 3 4 5 6 7 8 9 10 11 12 13 14
di/dt [kA/µs]
Erec [mJ], Irr [A], Qrr [µC]
Erec
Qrr
Irr
RG = 2.2 ohm
RG = 1.5 ohm
RG = 1.0 ohm
RG = 0.83 ohm
RG = 0.6 ohm
RG = 4.7 ohm
VCC = 900 V
IF = 3600 A
L = 50 nH
RG = 0.47 ohm
Tvj = 125 °C
Tvj = 150 °C
Fig. 12
Typical reverse recovery characteristics vs. forward current
Fig. 13
Typical reverse recovery characteristics vs. di/dt
0
1200
2400
3600
4800
6000
7200
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VF [V]
IF [A]
25 °C
125 °C
150 °C
0
1200
2400
3600
4800
6000
7200
0500 1000 1500 2000
VR [V]
IR [A]
VCC 1200 V
di/dt 14 kA/µs
Tvj = 150 °C
Lσ = 50 nH
Fig. 14
Typicial diode forward characteristics chip level
Fig. 15
Safe operating area diode (SOA)
0.0001
0.001
0.01
0.1
0.001 0.01 0.1 1 10
t [s]
Zth(j-c) [K/W] IGBT, DIODE
Zth(j-c) IGBT
Zth(j-c) Diode
Analytical function for transient thermal impedance:
)e-(1R = (t)Z n
1i
t/-
ic)-(jth
i
i
1
2
3
4
5
IGBT
Ri(K/kW)
5.059
1.201
0.495
0.246
i(ms)
202.9
20.3
2.01
0.52
DIODE
Ri(K/kW)
8.432
1.928
0.866
0.839
i(ms)
210
29.6
7.01
1.49
Fig. 16
Thermal impedance vs. time
Related documents:
5SYA 2042 Failure rates of HiPak modules due to cosmic rays
5SYA 2043 Load – cycle capability of HiPaks
5SYA 2045 Thermal runaway during blocking
5SYA 2053 Applying IGBT
5SYA 2058 Surge currents for IGBT diodes
5SYA 2093 Thermal design of IGBT modules
5SYA 2098 Paralleling of IGBT modules
5SZK 9111 Specification of environmental class for HiPak Storage
5SZK 9112 Specification of environmental class for HiPak Transportation
5SZK 9113 Specification of environmental class for HiPak Operation (Industry)
5SZK 9120 Specification of environmental class for HiPak
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Fax: +41 58 586 1306
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5SNA 3600E170300 | Doc. No. 5SYA 1414-05 08-2013