REJ03G1775-0100 Rev.1.00 Page 1 of 5
Jul 13, 2010
Preliminary Datasheet
RKR104BKV
Silicon Schottky Barrier Diode for Rectifying
Features
Low reverse current and suitable for high efficiency rectifying.
Halogen free, environmental friendly package includes conformity to RoHS directive.
Small Resin Package Flat lead type (SRP-F) is suitable for compact and high-density surface mount design.
Ordering Information
Part No Laser Mark Package Name Package Code Taping Abbreviation
(Quantity)
RKR104BKV P S01 SRP-F PWSF0002ZB-A P (3,000pcs / reel)
Pin Arrangement
12
1. Cathode
2. Anode
S01
Cathode mark
Mark
REJ03G1775-0100
Rev.1.00
Jul 13, 2010
RKR104BKV Preliminary
REJ03G1775-0100 Rev.1.00 Page 2 of 5
Jul 13, 2010
Absolute Maximum Ratings
(Ta = 25C)
Item Symbol Value Unit
Repetitive peak reverse voltage VRRM 40 V
Reverse voltage VR 40 V
Average rectified current IO *2 1 A
Non-Repetitive peak forward surge curr ent IFSM *1 5 A
Junction temperature Tj 150 C
Storage temperature Tstg –55 to +150 C
Notes: 1. 10 ms sine wave 1 pulse
2. Ta = 36C, With Ceramics board (board size: 50 mm 50 mm, Land size 2 mm 2 mm)
Short form wave (180C), VR = 20 V.
Electrical Characteristics *1
(Ta = 25C)
Item Symbol Min Typ Max Unit Test Condition
VF1 — — 0.37 IF = 100 mA Forward voltage VF2 — — 0.55
V IF = 700 mA
IR1 — — 10 VR = 5 V Reverse current IR2 — — 50
A VR = 40 V
Capacitance C — — 35 pF VR = 10 V, f = 1 MHz
— 100 — Ceramics board *1 Thermal resistance Rth(j-a) — 200 —
C/W Glass epoxy board *2
Notes: 1. Ceramics board : 50h 50w 0.8t (mm)
1.0
1.7
2.0
2.0
2.0
2. Glass epoxy board
1.0
10
10
1.7
2.0
RKR104BKV Preliminary
REJ03G1775-0100 Rev.1.00 Page 3 of 5
Jul 13, 2010
Main Characteristic
01020 30 40
0 0.2 0.4 0.6 0.8 1.0
Pulse test
10
–3
10
–2
10
–5
10
–4
1.0
10
–6
10
–1
10
–2
10
–7
10
–4
10
–3
10
–6
10
–5
Reverse voltage V
R
(V)
Fig.2 Reverse current vs. Reverse voltage
Reverse current I
R
(A)
Ta = 25°C
Forward voltage V
F
(V)
Fig.1 Forward current vs. Forward voltage
Forward current I
F
(A)
Pulse test
1.0
10
101.00.1
100
f=1MHz
Pulse test
Reverse voltage V
R
(V)
Fig.3 Capacitance vs. Reverse voltage
Capacitance C (pF)
Ta = 75°C
Ta = 75°C
Ta = 25°C
RKR104BKV Preliminary
REJ03G1775-0100 Rev.1.00 Page 4 of 5
Jul 13, 2010
05010025 75 125
0
0.8
0.4
1.2
1.0
0.6
0.2
Average rectified current I
O
(A)
Ambient temperature Ta (
°C
)
Fig.6 Average rectified current vs. Ambient temperature
–25
DC
1.5
0
Reverse power dissipation Pd (W)
Fig.4 Forward power dissipation vs.
Forward current
Forward current I
F
(A)
Forward power dissipation Pd (W)
1.00
D=1/3
D=1/2
sin
0.5
t
T
0A
Ta = 25°C
D = —
T
tD=1/6
40302010
0
Fig.5
Reverse
power dissipation vs. Reverse voltage
Reverse voltage V
R
(V)
0
t
T
0V
D = —
T
t
Tj = 150°C
D=2/3
D=1/2
sin
0.4
0.6
0.8
0.2
1.0
1.2
DC
2.5
2.0
1.5
1.0
0.5
3.0
3.5
4.0
D=5/6
50
150
V
R
= V
RRM
/2
Tj = 150°C
Rth(j-a) = 100°C/W
D=1/3
sin(θ=180°)
D=1/2
D=1/6
RKR104BKV Preliminary
REJ03G1775-0100 Rev.1.00 Page 5 of 5
Jul 13, 2010
Package Dimensions
Pattern of terminal position areas
A
b
c
D
E
HE
b2
e1
l1
0.8
0.6
0.08 0.13
1.5
2.5
3.3
0.9
0.7
1.6
1.2
2.8
2.6
3.5
1.2
0.8
1.0
0.18
1.7
2.7
3.7
L
LP
0.35 0.45
0.6 0.55
Dimension in Millimeters
Reference
Symbol Min Nom Max
⎯
0.0084g
MASS[Typ.]
SRP-FVPWSF0002ZB-A
RENESAS CodeJEITA Package Code Previous Code
Package Name
SRP-F
c
A
L
e
1
l
1
L
P
L
P
l
1
b
2
E
H
E
D
b
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