Preliminary Datasheet RKR104BKV Silicon Schottky Barrier Diode for Rectifying REJ03G1775-0100 Rev.1.00 Jul 13, 2010 Features Low reverse current and suitable for high efficiency rectifying. Halogen free, environmental friendly package includes conformity to RoHS directive. Small Resin Package Flat lead type (SRP-F) is suitable for compact and high-density surface mount design. Ordering Information Part No Laser Mark Package Name Package Code RKR104BKV P S01 SRP-F PWSF0002ZB-A Taping Abbreviation (Quantity) P (3,000pcs / reel) Pin Arrangement Cathode mark Mark 1 S01 2 1. Cathode 2. Anode REJ03G1775-0100 Rev.1.00 Jul 13, 2010 Page 1 of 5 RKR104BKV Preliminary Absolute Maximum Ratings (Ta = 25C) Item Repetitive peak reverse voltage Reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Symbol Value 40 40 1 5 150 -55 to +150 VRRM VR IO *2 IFSM *1 Tj Tstg Unit V V A A C C Notes: 1. 10 ms sine wave 1 pulse 2. Ta = 36C, With Ceramics board (board size: 50 mm 50 mm, Land size 2 mm 2 mm) Short form wave (180C), VR = 20 V. Electrical Characteristics *1 (Ta = 25C) Item Forward voltage Symbol VF1 VF2 Min -- -- Typ -- -- Max 0.37 0.55 Unit V Reverse current IR1 IR2 C Rth(j-a) -- -- -- -- -- -- -- -- 100 200 10 50 35 -- -- A Capacitance Thermal resistance pF C/W Test Condition IF = 100 mA IF = 700 mA VR = 5 V VR = 40 V VR = 10 V, f = 1 MHz Ceramics board *1 Glass epoxy board *2 Notes: 1. Ceramics board : 50h 50w 0.8t (mm) 2.0 2.0 1.7 1.0 2.0 2. Glass epoxy board 1.7 10 10 1.0 2.0 REJ03G1775-0100 Rev.1.00 Jul 13, 2010 Page 2 of 5 RKR104BKV Preliminary Main Characteristic 10-2 1.0 Pulse test Ta = 75C Pulse test 10-3 Reverse current IR (A) Forward current IF (A) 10-1 Ta = 25C 10-2 10-3 10-4 10-5 Ta = 25C 10-6 10-5 10-6 Ta = 75C 10-4 0 0.2 0.4 0.6 0.8 1.0 10-7 0 10 20 30 40 Forward voltage VF (V) Reverse voltage VR (V) Fig.1 Forward current vs. Forward voltage Fig.2 Reverse current vs. Reverse voltage f=1MHz Pulse test Capacitance C (pF) 100 10 1.0 0.1 1.0 10 Reverse voltage VR (V) Fig.3 Capacitance vs. Reverse voltage REJ03G1775-0100 Rev.1.00 Jul 13, 2010 Page 3 of 5 RKR104BKV Preliminary 4.0 1.2 1.0 0A t t D=-- T T Reverse power dissipation Pd (W) Forward power dissipation Pd (W) 0V 3.5 D=1/6 sin Ta = 25C 0.8 D=1/3 D=1/2 0.6 DC 0.4 0.2 t T 3.0 t D=-- T D=5/6 Tj = 150C 2.5 D=2/3 2.0 D=1/2 1.5 sin 1.0 0.5 0 0 1.0 1.5 0 0 10 20 30 40 50 Forward current IF (A) Reverse voltage VR (V) Fig.4 Forward power dissipation vs. Forward current Fig.5 Reverse power dissipation vs. Reverse voltage 1.2 Average rectified current IO (A) 0.5 1.0 VR = VRRM/2 Tj = 150C Rth(j-a) = 100C/W DC 0.8 0.6 sin(=180) D=1/2 0.4 D=1/3 D=1/6 0.2 0 -25 0 25 50 75 100 125 150 Ambient temperature Ta (C) Fig.6 Average rectified current vs. Ambient temperature REJ03G1775-0100 Rev.1.00 Jul 13, 2010 Page 4 of 5 RKR104BKV Preliminary Package Dimensions Package Name SRP-F JEITA Package Code Previous Code SRP-FV RENESAS Code PWSF0002ZB-A MASS[Typ.] 0.0084g D b L HE LP E LP c A l1 Reference Symbol e1 l1 b2 Pattern of terminal position areas REJ03G1775-0100 Rev.1.00 Jul 13, 2010 A b c D E HE L LP b2 e1 l1 Dimension in Millimeters Min 0.6 0.8 Nom 0.7 0.9 Max 0.8 1.0 0.08 1.5 2.5 3.3 0.35 0.13 1.6 2.6 3.5 0.45 0.6 1.2 2.8 1.2 0.18 1.7 2.7 3.7 0.55 Page 5 of 5 Notice 1. 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