January 2012 Doc ID 6876 Rev 9 1/23
23
SD2932
HF/VHF/UHF RF power N-channel MOSFETs
Features
■Gold metallization
■Excellent thermal stability
■Common source configuration, push-pull
■POUT = 300 W min. with 15 dB gain @ 175 MHz
Description
The SD2932 is a gold metalized N-channel MOS
field-effect RF power transistor, intended for use
in 50 V dc large signal applications up to 250
MHz.
Figure 1. Pin connection
M244
Epoxy sealed
1
2
1
2
1. Drain
2. Gate
3. Source
33
Table 1. Device summary
Order code Marking Base qty. Package Packaging
SD2932W SD2932(1) 15 M244 Tube
1. For more details please refer to Chapter 12: Marking, packing and shipping specifications.
www.st.com
Contents SD2932
2/23 Doc ID 6876 Rev 9
Contents
1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Impedance data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Typical performances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4.1 Typical performance (175 MHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5 Test circuit 175 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
6 Test circuit photomaster . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
7 Typical broadband data (175 - 230 MHz) . . . . . . . . . . . . . . . . . . . . . . . . 13
8 Test circuit 175 - 230 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
9 Typical broadband data (88 -108 MHz) . . . . . . . . . . . . . . . . . . . . . . . . . 16
10 Test circuit 88 - 108 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
11 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
12 Marking, packing and shipping specifications . . . . . . . . . . . . . . . . . . . 21
13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
SD2932 Electrical data
Doc ID 6876 Rev 9 3/23
1 Electrical data
1.1 Maximum ratings
1.2 Thermal data
Table 2. Absolute maximum ratings (TCASE = 25°C)
Symbol Parameter Value Unit
V(BR)DSS Drain source voltage 125 V
VDGR Drain-gate voltage (RGS = 1MΩ)125V
VGS Gate-source voltage ±20 V
IDDrain current 40 A
PDISS Power dissipation 500 W
TjMax. operating junction temperature +200 °C
TSTG Storage temperature -65 to +150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
Rthj-c Junction - case thermal resistance 0.35 °C/W
Electrical characteristics SD2932
4/23 Doc ID 6876 Rev 9
2 Electrical characteristics
TCASE = +25 oC
2.1 Static
2.2 Dynamic
Table 4. Static (per section)
Symbol Test conditions Min Typ Max Unit
V(BR)DSS VGS = 0 V IDS = 100 mA 125 V
IDSS VGS = 0 V VDS = 50 V 50 µA
IGSS VGS = 20 V VDS = 0 V 250 nA
VGS(Q) VDS = 10 V ID = 250 mA 1.5 4 V
VDS(ON) VGS = 10 V ID = 10A 3 V
GFS VDS = 10 V ID = 5 A 5 mho
ΔVGS (1)
1. Absolute VGS difference between side 1 and side 2 of the device
VDS = 10 V ID = 250 mA 200 mV
CISS VGS = 0 V VDS = 50 V f = 1 MHz 480 pF
COSS VGS = 0 V VDS = 50 V f = 1 MHz 190 pF
CRSS VGS = 0 V VDS = 50 V f = 1 MHz 18 pF
Table 5. Dynamic
Symbol Test conditions Min Typ Max Unit
POUT VDD = 50 V IDQ = 500 mA f = 175 MHz 300 W
GPS VDD = 50 V, IDQ = 500 mA, POUT = 300 W, f = 175 MHz 15 16 dB
hDVDD = 50 V, IDQ = 500 mA, POUT = 300 W, f = 175 MHz 50 60 %
Load
mismatch
VDD = 50 V, IDQ = 500 mA, POUT = 300 W, f = 175 MHz
All phase angles 5:1 VSWR
SD2932 Impedance data
Doc ID 6876 Rev 9 5/23
3 Impedance data
Figure 2. Impedance data
Note: Measured Gate to Gate and Drain to Drain, respectively.
Table 6. Impedance data
Freq ZIN (Ω)Z
DL (Ω)
175 MHz 0.92 - j 0.14 3.17 + j 4.34
Z
DL
D
S
Z
IN
G
Typical Input
Impedance
Typical Drain
Load Impedance
Typical performances SD2932
6/23 Doc ID 6876 Rev 9
4 Typical performances
Figure 3. Maximum thermal resistance vs
case temperature
Figure 4. Gate voltage vs case temperature
25 30 35 40 45 50 55 60 65 70 75 80 85
Tc, CASE TEMPERATURE (°C)
0.34
0.36
0.38
0.4
0.42
Rth(j-c) (ºC/W)
-25 0 25 50 75 100
Tcase, CASE TEMPERATURE (°C)
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
VGS, GATE-SOURCE VOLTAGE (NORMALIZED)
Id=.1 A
Id=.25 A
Id=1 A
Id=2 A
Id=4 A
Id=7 A
Id=5 A
Id=9 A
Id=10 A
Id=11 A
Figure 5. Capacitance vs drain-source
voltage
Figure 6. Drain current vs gate voltage
0 1020304050
VDS, DRAIN-SOURCE VOLTAGE (V)
10
100
1000
10000
C, CAPACITANCE (pF)
Ciss
Coss
Crss
2 2.5 3 3.5 4 4.5 5 5.5 6
VGS, GATE-SOURCE VOLTAGE (V)
0
5
10
15
20
ID, DRAIN CURRENT (A)
T=-20 °C
T=+25 °C
T=+80 °C
Vds=10 V
SD2932 Typical performances
Doc ID 6876 Rev 9 7/23
Figure 7. Maximum safe operating area
Figure 8. Transient thermal impedance
$#
)D!
$#
M3
M3
$#
M3
M3
-AX$RAIN#URRENT
$RAINSUPPLYVOLTAGE 6DD6
$#
M3
M3
$#
M3
M3
4CASE#4J#
!-V
4RANSIENT
4HERMAL)MPEDANCE:THJC#7
2ECTANGULAR0OWER0ULSE7IDTH SEC
3INGLEPULSE
% % % % %
!-V
Typical performances SD2932
8/23 Doc ID 6876 Rev 9
Figure 9. Transient thermal model
4.1 Typical performance (175 MHz)
Figure 10. Output power vs input power Figure 11. Output power vs input power
0 2 4 6 8 10 12 14 16 18 20 22
Pin, INPUT POWER (W)
0
100
200
300
400
500
600
Pout, OUTPUT POWER (W)
Vdd=50V
Idq=2 x 250mA
F=175Mhz
Vdd=40 V
Vdd=50 V
0 2 4 6 8 10121416182022
Pin, INPUT POWER
(
W
)
0
100
200
300
400
500
600
Pout, OUTPUT POWER (W)
Vdd=50V
Idq=2 x 250mA
F=175Mhz
T=-20 °C
T=+25 °C
T=+80 °C
SD2932 Typical performances
Doc ID 6876 Rev 9 9/23
Figure 12. Power gain vs output power Figure 13. Efficiency vs output power
0 100 200 300 400 500
Pout, OUTPUT POWER (W)
10
11
12
13
14
15
16
17
18
Gp, POWER GAIN (dB)
Vdd=50V
Idq=2 x 250mA
F=175Mhz
0 100 200 300 400 500
Pout, OUTPUT POWER (W)
10
20
30
40
50
60
70
80
Nc, EFFICIENCY (%)
Vdd=50V
Idq=2 x 250mA
F=175Mhz
Table 7. Output power vs supply voltage Figure 14. Output power vs gate voltage
24 26 28 30 32 34 36 38 40 42 44 46 48 50
Vdd,DRAIN VOLTAGE (V)
100
150
200
250
300
350
400
450
Pout,OUTPUT POWER (W)
Pin=3.9 W
Pin=7.8 W
Pin=15.6 W
Idq=2 x 250mA
F=175Mhz
-3 -2 -1 0 1 2 3
VGS, GATE_SOURCE VOLTAGE (V)
0
100
200
300
400
Pout, OUTPUT POWER (W)
Vdd=50V
Idq=2 x 250mA
F=175Mhz
T=-20 °C
T=+25 °C
T=+80 °C
Test circuit 175 MHz SD2932
10/23 Doc ID 6876 Rev 9
5 Test circuit 175 MHz
Figure 15. 175 MHz test circuit schematic (production test circuit
NOTES:
1. DIMENSION AT COMPONENT SYMBOL ARE REFERENCE FOR COMPONENT PLACEMENT.
2. GAP BETWEEN GROUND & TRANSMISSION LINES IS + 0.002{0.05} - O.OOO[0.00] TYP
REF. 1022256B
Table 8. 175 MHz test circuit part list
Component Description
R1,R2,R5,R6 470 Ohm 1 W, surface mount chip resistor
R3,R4 360 Ohm 0.5 W, carbon comp. axial lead resistor or equivalent
R7,R8 560 Ohm 2 W, resistor two turn wire air-wound axial lead resistor
R9,R10 20 K Ohm 3.09 W, 10 turn wirewound precision potentiometer
C1,C4 680 pF ATC 130B surface mount ceramic chip capacitor
C2,C3,C7,C8,C17,C19,
C20,C21 10000 pF ATC 200B surface mount ceramic chip capacitor
C5 75 pF ATC 100B surface mount ceramic chip capacitor
C6 ST40 25 pF - 115 pF miniature variable trimmer
C9,C10 47 pF ATC 100B surface mount ceramic chip capacitor
C11,C12, C13 43 pF ATC 100B surface mount ceramic chip capacitor
C14,C15,C24,C25 1200 pF ATC 700B surface mount ceramic chip capacitor
C16,C18 470 pF ATC 700B surface mount ceramic chip capacitor
SD2932 Test circuit 175 MHz
Doc ID 6876 Rev 9 11/23
C22,C23 0.1 μF / 500 V surface mount ceramic chip capacitor
C26,C27 0.01 μF / 500 V surface mount ceramic chip capacitor
C28 10 μF / 63 aluminum eletrolytic axial lead capacitor
B1 50 Ohm RG316 O.D 0.076[1.93] L = 11.80[299.72] flexible coaxial cable 4 Turns thru
ferrite bead
B2 50 Ohm RG-142B O.D 0.165[4.19] L = 11.80[299.72] flexible coaxial cable
T1 R.F. Transformer 4:1, 25 Ohm O.D RG316-25 O.D 0.080[2.03] L = 5.90[149.86] flexible
coaxial cable 2 turns thru fferrite multi-aperture core
T2 R.F. transformer 1:4, 25 Ohm semi-rigid coaxial cable O.D. 0.141[3.58] L = 5.90[149.86]
L1 Inductor λ 1/4 wave 50 Ohm O.D 0.165[4.19] L = 11.80 [299.72] flexible coaxial cable 2
turns thru ferrite bead
FB1,FB5 Shield bead
FB2,FB6 Multi-aperture core
FB3 Multilayer ferrite chip bead (surface mount)
FB4 Surface mount EMI shield bead
PCB Woven glass reinforced PTFE microwave laminate 0.06”, 1 oz EDCu, both sides, εr =
2.55
Table 8. 175 MHz test circuit part list (continued)
Component Description
Test circuit photomaster SD2932
12/23 Doc ID 6876 Rev 9
6 Test circuit photomaster
Figure 16. 175 MHz test circuit photomaster
Figure 17. 175 MHz test fixture
8.50 inches
4 inches
SD2932 Typical broadband data (175 - 230 MHz)
Doc ID 6876 Rev 9 13/23
7 Typical broadband data (175 - 230 MHz)
Figure 18. Input power vs frequency Figure 19. Power gain vs frequency
Figure 20. Efficiency vs frequency Figure 21. Return loss vs frequency
Figure 22. 1 dB compression point vs
frequency
160 170 180 190 200 210 220 230 240
FREQUENCY (MHz)
2
4
6
8
10
12
Pin , INPUT POWER (W)
Vdd = 50V
Idq = 300 mA
Pout = 250W
160 170 180 190 200 210 220 230 240
FREQUENCY (MHz)
10
11
12
13
14
15
16
17
18
Gp , POWER GAIN (dB)
Vdd = 50V
Idq = 300 mA
Pout = 250W
160 170 180 190 200 210 220 230 240
FREQUENCY (MHz)
45
50
55
60
65
70
75
80
Nd , DRAIN EFFICIENCY (%)
Vdd = 50V
Idq = 300 mA
Pout = 250W
160 170 180 190 200 210 220 230 240
FREQUENCY (MHz)
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
RTL , RETURN LOSS (dB)
Vdd = 50V
Idq = 300 mA
Pout = 250W
160 170 180 190 200 210 220 230 240
FREQUENCY (MHz)
250
275
300
325
350
P1dB , 1dB COMPRESSION (W)
Vdd = 50V
Idq = 300 mA
Test circuit 175 - 230 MHz SD2932
14/23 Doc ID 6876 Rev 9
8 Test circuit 175 - 230 MHz
Figure 23. 175 - 230 MHz test circuit layout (engineering fixture)
Table 9. 175 - 230 MHz circuit layout component part list
Component Description
PCB 1/32” woven fiberglass 0.030 Cu, sides, εr = 4.8
T1 50 Ohm flexible coax cable OD 0.06”, 3” long. ferrite Core NEOSIDE
T2,T3 9:1transformer, 16.5 Ohm flexible coax cable 0.1”, 3” Long
T4,T5 4:1 transformer, 25 Ohm flexible coax cable OD 0.06”, 5” Long
C1 8.2 pF ceramic cap
C2,C3 100 pF ceramic cap
C4 2 - 18 pF chip cap
C5 47 pF ceramic cap
C6,C11 47 nF ceramic cap
C7 56 pF ATC chip cap
C8,C9,C13 470 pF ATC chip cap
C10 100 nF ceramic cap
C12 2 x 330 nF / 50 V cap
C14 10 nF / 63 V electrolityc cap
R1,R3 47 Ohm resistor
R2 6.8 K Ohm chip resistor
SD2932 Test circuit 175 - 230 MHz
Doc ID 6876 Rev 9 15/23
Component Description
R4 4.7 K Ohm multi turns trim resistor
R5 8.2 K Ohm / 5 W resistor
R6 3.3 K Ohm / 5 W resistor
D1 6.8 V Zener diode
L1 20 nH Inductor
L2 70 nH Inductor
L3 30 nH Inductor
L4 10 nH Inductor
L5 15 nH Inductor
Table 9. 175 - 230 MHz circuit layout component part list (continued)
Typical broadband data (88 -108 MHz) SD2932
16/23 Doc ID 6876 Rev 9
9 Typical broadband data (88 -108 MHz)
Figure 24. Input power vs frequency Figure 25. Power gain vs frequency
Figure 26. Efficiency vs frequency Figure 27. Return loss vs frequency
Figure 28. 2nd harmonic vs. frequency
(88 - 108 MHz)
Figure 29. 3rd harmonic vs frequency
(88 - 108 MHz)
85 90 95 100 105 110
FREQUENCY (MHz)
2.5
3
3.5
4
Pin , INPUT POWER (W)
Vdd = 50V
Idq = 200 mA
Pout = 300W
85 90 95 100 105 110
FREQUENCY (MHz)
16
17
18
19
20
21
22
Gp , POWER GAIN (dB)
Vdd = 50V
Idq = 200 mA
Pout = 300W
85 90 95 100 105 110
FREQUENCY (MHz)
60
62
64
66
68
70
72
74
76
78
80
Nd , EFFICIENCY (%)
Vdd = 50V
Idq = 200 mA
Pout = 300W
85 90 95 100 105 110
FREQUENCY (MHz)
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
RTL , RETURN LOSS (dB)
Vdd = 50V
Idq = 200 mA
Pout = 300W
85 90 95 100 105 110
FREQUENCY (MHz)
-36
-34
-32
-30
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
H2 , 2nd HARMONIC (dBc)
Vdd = 50V
Idq = 200 mA
Pout = 300W
85 90 95 100 105 110
FREQUENCY (MHz)
-36
-34
-32
-30
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
H3 , 3rd HARMONIC (dBc)
Vdd = 50V
Idq = 200 mA
Pout = 300W
SD2932 Test circuit 88 - 108 MHz
Doc ID 6876 Rev 9 17/23
10 Test circuit 88 - 108 MHz
Figure 30. 88 - 108 MHz test circuit layout (engineering fixture)
Table 10. 175 - 230 MHz circuit layout component part list
Component Description
PCB 1/32” woven fiberglass 0.030 Cu, 2 sides, εr = 4.8
T1 50 Ohm flexible coax cable OD 0.06”, 5” Long
T2,T3 9:1 transformer, 25 Ohm flexible coax cable OD 0.1”, 3.9”. ferrite core NEOSIDE
T4,T5 4:1 transformer, 25 Ohm flexible coax cable OD 0.1”, 5” Long
T6 50 Ohm flexible coax cable OD 0.1”, 5” long
FB1 vk200
C1 10 pF ceramic cap
C2,C3,C4,C7,C8 1 nF chip cap
C5,C6 1 nF ATC chip cap
C9 470 pF ATC chip cap
C10 100 nF chip cap
C11 100 mF / 63 V electrolityc cap
R1 56 Ohm resistor
R2,R4 10 Ohm chip resistor
R3 10 K Ohm resistor
R5 5.6 Ohm resistor
Test circuit 88 - 108 MHz SD2932
18/23 Doc ID 6876 Rev 9
Component Description
R6 10 K Ohm, 10 turn trim resistor
R7 3.3 K Ohm / 5 W resistor
R8 15 Ohm / 5 W resistor
D1 6.6 V Zener diode
L1 10 nH inductor
L2 40 nH inductor
L3 70 nH inductor
Table 10. 175 - 230 MHz circuit layout component part list (continued)
SD2932 Package mechanical data
Doc ID 6876 Rev 9 19/23
11 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Package mechanical data SD2932
20/23 Doc ID 6876 Rev 9
Figure 31. Package dimensions
Table 11. M244 (.400 x .860 4/L BAL N/HERM W/FLG) mechanical data
Dim.
mm. Inch
Min Typ Max Min Typ Max
A 5.59 5.84 0.220 0.230
B 5.08 0.200
C 3.02 3.28 0.119 0.129
D 9.65 9.91 0.380 0.390
E 19.81 20.82 0.780 0.820
F 10.92 11.18 0.430 0.440
G 27.94 1.100
H 33.91 34.16 1.335 1.345
I 0.10 0.15 0.004 0.006
J 1.52 1.78 0.060 0.070
K 2.59 2.84 0.102 0.112
L 4.83 5.84 0.190 0.230
M 10.03 10.34 0.395 0.407
N 21.59 22.10 0.850 0.870
1020876B
Controlling Dimension: Inches
SD2932 Marking, packing and shipping specifications
Doc ID 6876 Rev 9 21/23
12 Marking, packing and shipping specifications
Figure 32. Marking layout
Table 12. Packing and shipping specifications
Order code Packaging Pcs per tray Dry pack
humidity Lot code
SD2932W Tube 15 < 10 % Not mixed
Table 13. Marking specifications
Symbol Description
W Wafer process code
CZ Assy plant
xxx Last 3 digit of diffusion lot
VY Diffusion plant
MAR Country of origin
CZ Test and finishing plant
y Assy year
yy Assy week
Revision history SD2932
22/23 Doc ID 6876 Rev 9
13 Revision history
Table 14. Document revision history
Date Revision Changes
15-Jul-2004 5
24-Jan-2006 6 Updated Table 4: Static (per section).
23-Nov-2009 7 Inserted ΔVGS in Table 4: Static (per section).
31-Mar-2010 8 Added Figure 7, Figure 8 and Figure 9.
11-Jan-2012 9 Inserted Chapter 12: Marking, packing and shipping specifications.
Minor text changes.
SD2932
Doc ID 6876 Rev 9 23/23
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