SS8050
NPN Silicon
Transistors
TO-92
Features
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CBO Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0) 40 --- Vdc
V(BR)CEO Collector-Emitter Breakdown Voltage
(IC=0.1mAdc, IB=0) 25 --- Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0) 5.0 --- Vdc
ICBO Collector Cutoff Current
(VCB=40Vdc, IE=0) --- 0.1 uAdc
ICEO Collector Cutoff Current
(VCE=20Vdc, IB=0) --- 0.1 uAdc
IEBO Emitter Cutoff Current
(VEB=5.0Vdc, IC=0) --- 0.1 uAdc
ON CHARACTERISTICS
hFE(1) DC Current Gain
(IC=100mAdc, VCE=1.0Vdc) 85 300 ---
hFE(2) DC Current Gain
(IC=800mAdc, VCE=1.0Vdc) 40 --- ---
VCE(sat) Collector-Emitter Saturation Voltage
(IC=800mAdc, IB=80mAdc) --- 0.5 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(IC=800mAdc, IB=80mAdc) --- 1.2 Vdc
VEB Base- Emitter Voltage
(IE=1.5Adc) --- 1.6 Vdc
SMALL-SIGNAL CHARACTERISTICS
fT Transistor Frequency
(IC=50mAdc, VCE=10Vdc, f=30MHz) 190 --- MHz
• Marking Code: SS8050
• TO-92 Plastic-Encapsulate Transistors
• Capable of 1.0Watts(Tamb=25OC) of Power Dissipation.
• Collector-current 1.5A
• Collector-base Voltage 40V
• Operating and storage junction temperature range: -55OC to +150OC
CLASSIFICATION OF HFE (1)
Rank C D
Range 120-200 160-300
E
B
C
AE
B
C
D
G
Pin Configuration
omponents
20736 Marilla Street Chatsworth
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MCC
www.mccsemi.com
Revision: 3 2004/07/26
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .170 .190 4.33 4.83
B .170 .190 4.30 4.83
C .550 .590 13.97 14.97
D .010 .020 0.36 0.56
E .130 .160 3.30 3.96
G .010 .104 2.44 2.64
TM
Micro Commercial Components
