ML7XX11 SERIES
TYPE
NAME ML725B11/ML720J11S/ML725J11F
MITSUBISHI LASER DIODES
InGaAsP DFB-LASER DIODES
DESCRIPTION
ML7XX11 series are DFB (Distributed Feedback) laser diodes
emitting light beam around 1310nm.
They are well suited for light source in long -distance
digital transmission systems.
ML725B11F / ML720J11S are hermetically sealed devices with
the photo diode for optical output monitoring.
FEATURES
Low threshold current (typical 10mA)
Wide temperature range operation
High - side mode suppression ratio (typical 40dB)
High speed response (typical 0.2nsec)
MQW* active layer
FSBH** structure fabricated by MOCVD process
* Multiple Quantum Well
** Facet Selective - growth Buried Hetero structure
APPLICATION
Long - distance digital transmission system
***Specification Note
Type Operation Temperature Range
ML7XX11-01 Tc=-40 to 85ºC
ML7XX11-02 Tc=-20 to 85ºC
ML7XX11-03 Tc= 0 to 85ºC
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC
MITSUBISHI
ELECTRIC
mA
Symbol Parameter Test conditions Min. Typ. Max Unit
Ith Threshold current CW -10 30 mA
Iop Operation current CW,Po=5mW -20 40 mA
Slope efficiency CW,Po=5mW 0.3 0.5 -
V
Vop Operating voltage CW,Po=5mW 1.2 1.8
mW/mA
pPeak wavelength CW,Po=5mW ***)Note 1290 1310 1330 nm
Beam divergence angle (parallel) CW,Po=5mW 25 deg.
Beam divergence angle CW,Po=5mW
-0.2 -
-
(perpendicular)
SMSR Side mode suppression ratio CW,Po=5mW ***)Note
ImCW,Po=5mW
35
-
-30 40 deg.
30 40 -dB
Monitoring output current
tr,tf Rise and Fall time If=Ith,Po=5mW,10 - 90% - 0.40.2 ns
IFD Forward current (Photo diode) -2mA
Symbol Paramete
r
Conditions Ratings Unit
Po Light output power CW 6mW
VRL Reverse voltage (Laser diode) -2V
VRD Reverse voltage (Photo diode) -20 V
Tc Case temperature -
Tstg Storage temperature --40to+100 ºC
ºC
-02 -20 to +85
-01 -40 to +85
-03 0 to +85
(1)
φ1.0Min.
φ2.0Min.
φ3.55±0.1
φ5.6 +0
-0.03
1.27
0.25±0.03
(Glass)
18 ±1 2.1±0.15
1.2
±0.1
4-φ0.45±0.05
(2)
1±0.1
2-90º
φ2.0±0.25
(P.C.D.)
φ4.25
(3)
(4)
(0.25)
(0.25)
Reference Plane
Emitting Facet
(1) (2)
(Dimension:mm)
±0.03
ML725B11F
LDPD
(3)
(2) (1)
(4)
Case
OUTLINE DRAWINGS
(1)
φ1.0Min.
φ2.0Min.
φ3.55±0.1
φ5.6 +0
-0.03
1.27
0.25±0.03
(Glass)
18 ±1 2.1±0.15
1.2
±0.1
4-φ0.45±0.05
(2)
1±0.1
2-90º
φ2.0±0.25
(P.C.D.)
φ4.25
(3)
(4)
(0.25)
(0.25)
Reference Plane
Emitting Facet
(1) (2)
(Dimension:mm)
±0.03
ML720J11S
LDPD
(3)
(4) (1)
(2)
Case
(1)
φ3.75±0.1
φ5.6 +0
-0.03
1.27
18 ±1
3.97 ±0.15
1.2 ±0.1
4-φ0.45±0.05
(2)
1±0.1
2-90º
φ2.0±0.25
(P.C.D.)
φ4.3
(3)
(4)
(0.25)
(0.25)
Reference Plane
Emitting Facet
(1) (2)
Top View
(7.51)
(Dimension:mm)
±0.03
ML725J11F
LDPD
(3)
(2) (1)
(4)
Case
ML720J11S
ML725B11F
ML725J11F
ML7XX11 SERIES
MITSUBISHI LASER DIODES
InGaAsP DFB-LASER DIODES
