2N6486 2N6487 2N6488 NPN
2N6489 2N6490 2N6491 PNP
COMPLEMENTARY SILICON
POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6486, 2N6489
series types are complementary silicon power
transistors designed for general purpose switching and
amplifier applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C unless otherwise noted) 2N6486 2N6487 2N6488
SYMBOL 2N6489 2N6490 2N6491 UNITS
Collector-Base Voltage VCBO 50 70 90 V
Collector-Emitter Voltage VCEO 40 60 80 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 15 A
Continuous Base Current IB 5.0 A
Power Dissipation PD 75 W
Power Dissipation (TA=25°C) PD 1.8 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJC 1.67 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C) 2N6486 2N6487 2N6488
2N6489 2N6490 2N6491
SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS
ICEV V
CE=45V, VEB=1.5V - 500 - - - - μA
ICEV V
CE=65V, VEB=1.5V - - - 500 - - μA
ICEV V
CE=85V, VEB=1.5V - - - - - 500 μA
ICEO V
CE=½ Rated VCEO - 1.0 - 1.0 - 1.0 mA
IEBO V
EB=5.0V - 1.0 - 1.0 - 1.0 mA
BVCEV VBE=1.5V, IC=200mA 50 - 70 - 90 - V
BVCEO IC=200mA 40 - 60 - 80 - V
VCE(SAT) IC=5.0A, IB=0.5A - 1.3 - 1.3 - 1.3 V
VCE(SAT) IC=15A, IB=5.0A - 3.5 - 3.5 - 3.5 V
VBE(ON) VCE=4.0V, IC=5.0A - 1.3 - 1.3 - 1.3 V
VBE(ON) VCE=4.0V, IC=15A - 3.5 - 3.5 - 3.5 V
hFE VCE=4.0V, IC=5.0A 20 150 20 150 20 150
hFE VCE=4.0V, IC=15A 5.0 - 5.0 - 5.0 -
hfe VCE=4.0V, IC=1.0A, f=1.0kHz 25 - 25 - 25 -
fT VCE=4.0V, IC=1.0A, f=1.0MHz 5.0 - 5.0 - 5.0 - MHz
TO-220 CASE
R1 (11-September 2012)
www.centralsemi.com
2N6486 2N6487 2N6488 NPN
2N6489 2N6490 2N6491 PNP
COMPLEMENTARY SILICON
POWER TRANSISTORS
TO-220 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Collector
3) Emitter
Tab) Collector
MARKING:
FULL PART NUMBER
www.centralsemi.com
R1 (11-September 2012)
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