NESG2046M33
NEC's NPN SiGe TRANSISTOR
FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
California Eastern Laboratorie
• IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS:
NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
• HIGH BREAKDOWN VOLTAGE TECHNOLOGY
FOR SIGE TRANSISTORS :
VCEO (absolute maximum ratings) = 5.0 V
• 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE
FEATURES
PRELIMINARY DATA SHEET
ORDERING INFORMATION
Remark To order evaluation samples, contact your nearby sales offi ce.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA =+25ºC)
PARAMETER SYMBOL RATINGS UNIT
Collector to Base Voltage VCBO 13 V
Collector to Emitter Voltage VCEO 5V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC40 mA
Total Power Dissipation Ptot Note 130 mW
Junction Temperature Tj150 °C
Storage Temperature Tstg −65 to +150 °C
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
PART NUMBER QUANTITY SUPPLYING FORM
NESG2046M33-A 50 pcs (Non reel) • 8 mm wide embossed taping
• Pin 2 (Base) face the perforation side of the tape
NESG2046M33-T3-A 10 kpcs/reel