FK30SM-5 High-Speed Switching Use Nch Power MOS FET REJ03G1402-0200 (Previous: MEJ02G0204-0101) Rev.2.00 Jul 07, 2006 Features * * * * VDSS : 250 V rDS (ON) (max) : 0.108 ID : 30 A Integrated Fast Recovery Diode (MAX.) : 150 ns Outline RENESAS Package code: PRSS0004ZB-A (Package name: TO-3P) 2, 4 4 1. 2. 3. 4. 1 1 2 Gate Drain Source Drain 3 3 Applications Servo motor drive, Robot, UPS, Lamp ballast, etc. Maximum Ratings (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Rev.2.00 Jul 07, 2006 page 1 of 6 Symbol VDSS Ratings 250 Unit V VGSS ID IDM IS ISM PD Tch Tstg -- 30 30 90 30 90 275 - 55 to +150 - 55 to +150 4.8 V A A A A W C C g Conditions VGS = 0 V VDS = 0 V Typical value FK30SM-5 Electrical Characteristics (Tch = 25C) Parameter Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol V(BR) DSS V(BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) | yfs | Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Min. 250 30 -- -- 2 -- -- 10.0 -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3 0.083 1.25 15.0 2850 580 110 45 120 330 120 1.5 -- -- Max. -- -- 10 1 4 0.108 1.62 -- -- -- -- -- -- -- -- 2.0 0.45 150 Unit V V A mA V V S pF pF pF ns ns ns ns V C/W ns Test conditions ID = 1 mA, VGS = 0 V IG = 100 A, VDS = 0 V VGS = 25 V, VDS = 0 V VDS = 250 V, VGS = 0 V ID = 1 mA, VDS = 10 V ID = 15 A, VGS = 10 V ID = 15 A, VGS = 10 V ID = 15 A, VDS = 10 V VDS = 25 V, VGS = 0 V, f = 1 MHz VDD = 150 V, ID = 15 A, VGS = 10 V, RGEN = RGS = 50 IS = 15 A, VGS = 0 V Channel to case IS = 30 A, dis/dt = -100 A/s Performance Curves 300 3 2 250 102 7 5 3 2 200 150 100 50 0 0 50 100 150 Case Temperature Tc (C) Rev.2.00 Maximum Safe Operating Area Drain Current ID (A) Power Dissipation PD (W) Power Dissipation Derating Curve Jul 07, 2006 page 2 of 6 200 101 7 5 3 2 tw =1 00 D s C 100 7 Tc = 25C 5 Single Pulse 3 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Drain-Source Voltage VDS (V) FK30SM-5 Output Characteristics (Typical) Output Characteristics (Typical) VGS=20V 20 10V Tc = 25C Pulse Test 40 6V 30 20 5V 10 PD = 275W Drain Current ID (A) Drain Current ID (A) VGS = 20V 50 10V 16 5V Tc = 25C Pulse Test PD = 275W 12 4.5V 8 4 4V 4V 10 20 30 40 ID = 50A 4 30A 2 15A 4 8 12 16 20 Drain Current ID (A) 16 20 0.20 Tc = 25C Pulse Test 0.16 VGS = 20V 0.12 10V 0.08 0.04 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Gate-Source Voltage VGS (V) Drain Current ID (A) Transfer Characteristics (Typical) Forward Transfer Admittance vs. Drain Current (Typical) 40 Tc = 25C VDS = 50V Pulse Test 32 24 16 8 4 8 12 16 Gate-Source Voltage VGS (V) Rev.2.00 12 On-State Resistance vs. Drain Current (Typical) 6 0 8 On-State Voltage vs. Gate-Source Voltage (Typical) 8 0 4 Drain-Source Voltage VDS (V) Tc = 25C Pulse Test 0 0 Drain-Source Voltage VDS (V) 10 0 0 50 Drain-Source On-State Resistance rDS(ON) () 0 Jul 07, 2006 page 3 of 6 20 Forward Transfer Admittance | yfs | (S) Drain-Source On-State Voltage VDS(ON) (V) 0 102 7 VDS = 10V 5 Pulse Test 3 2 Tc = 25C 75C 125C 101 7 5 3 2 100 0 10 2 3 5 7 101 2 3 Drain Current ID (A) 5 7 102 FK30SM-5 Capacitance vs. Drain-Source Voltage (Typical) Switching Characteristics (Typical) 103 104 7 5 Ciss 3 2 103 7 5 Switching Time (ns) Capacitance C (pF) 7 5 Coss 3 2 102 7 5 3 2 Crss Tch = 25C f = 1MHz VGS = 0V t d(on) 3 2 5 7 101 2 3 5 7 102 2 3 Drain Current ID (A) Gate-Source Voltage vs. Gate Charge (Typical) Source-Drain Diode Forward Characteristics (Typical) 50 VDS = 50V 100V 12 200V 8 4 0 101 7 5 40 80 120 160 40 25C 30 75C 20 10 0 200 0 0.8 1.6 2.4 3.2 4.0 Gate Charge Qg (nC) Source-Drain Voltage VSD (V) On-State Resistance vs. Channel Temperature (Typical) Threshold Voltage vs. Channel Temperature (Typical) VGS = 10V ID = 15A Pulse Test 3 2 100 7 5 3 2 0 VGS = 0V Pulse Test Tc = 125C Source Current IS (A) 16 10-1 Tch = 25C VDD = 150V VGS = 10V RGEN = RGS = 25 Drain-Source Voltage VDS (V) 50 100 150 200 250 Channel Temperature Tch (C) Jul 07, 2006 page 4 of 6 Gate-Source Threshold Voltage VGS(th) (V) Gate-Source Voltage VGS (V) Drain-Source On-State Resistance rDS(ON) (tC) tr Tch = 25C ID = 30 A 0 Drain-Source On-State Resistance rDS(ON) (25C) tf 102 7 5 101 100 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 20 Rev.2.00 t d(off) 3 2 5.0 VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 -50 0 50 100 150 Channel Temperature Tch (C) Breakdown Voltage vs. Channel Temperature (Typical) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 -50 0 50 100 103 7 5 101 7 5 3 2 3 2 Irr 101 7 5 101 2 3 5 7 102 0 Tch = 25C 10 Tch = 150C 7 5 2 3 5 7 103 Source Current dis/dt (-A/s) Transient Thermal Impedance Zth(ch-c) (C/W) Reverce Recovery Time trr (ns) t rr Reverce Recovery Current Irr (ns) 5 IS = 30A VGS = 0V 3 VDD = 150V 2 102 7 5 Irr 3 2 Tch = 25C Tch = 150C 5 7 101 2 3 2 3 100 5 7 102 101 7 5 3 2 100 7 D=1 5 3 0.5 2 0.2 -1 10 7 0.1 5 3 2 PDM tw T 0.05 D= tw 0.02 T 0.01 Single Pulse 10-2 10-42 3 5710-32 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 Pulse Width tw (s) Switching Waveform Vout Monitor Vin Monitor 3 2 Transient Thermal Impedance Characteristics Switching Time Measurement Circuit 90% D.U.T. RGEN RL Vin Vout 10% 10% 10% VDD RGS 90% td(on) Rev.2.00 101 7 5 Source Current IS (A) Diode Reverse vs. Source Currnet dis/dt Characteristic (Typical) 3 2 t rr 102 7 5 Channel Temperature Tch (C) 5 3 2 3 2 101 0 10 150 102 7 5 dis/dt = -100A/s VGS = 0V VDD = 150V Jul 07, 2006 page 5 of 6 Reverce Recovery Current Irr (ns) Diode Reverse vs. Source Currnet Characteristic (Typical) Reverce Recovery Time trr (ns) Drain-Source Breakdown Voltage V(BR)DSS (tC) Drain-Source Breakdown Voltage V(BR)DSS (25C) FK30SM-5 tr 90% td(off) tf FK30SM-5 Package Dimensions JEITA Package Code SC-65 Package Name TO-3P* RENESAS Code PRSS0004ZB-A Previous Code MASS[Typ.] 4.8g Unit: mm 4.5 15.9Max 4 2 3.2 20.0 5.0 1.5 2 19.5Min 4.4 1.0 0.6 2.8 5.45 5.45 4 Ordering Information Lead form Straight type Standard packing Static electricity prevention bag Quantity 200 Standard order code Type name Note: Please confirm the specification about the shipping in detail. Rev.2.00 Jul 07, 2006 page 6 of 6 Standard order code example FK30SM-5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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