Data Sheet Schottky Barrier Diode RB480Y-40 lDimensions (Unit : mm) lApplications Low current rectification lLand size figure (Unit : mm) 1.60.1 1.60.1 0.220.05 1.55 (3) 1.20.1 (4) 3)High reliability (1) lConstruction Silicon epitaxial planer 1.60.1 1.60.05 lFeatures 1)Ultra small mold type. (EMD4) 2)Low IR 0.130.05 0.45 0.5 1.0 00.1 EMD4 (2) 0.5 0.5 1.00.1 lStructure 0.50.05 ROHM : EMD4 JEITA : SC-75A Size week code 1Pin Mark lTaping dimensions (Unit : mm) 1.50.1 0 2.00.05 0.30.1 lAbsolute maximum ratings (Ta=25C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz1cyc) (*1) Junction temperature Tj Storage temperature Tstg (*1) Rating of per diode lElectrical characteristics (Ta=25C) Parameter Symbol VF1 Forward voltage VF2 Reverse current 0.80.1 4.00.1 Limits 40 40 200 1 125 1.650.01 Unit V V mA A C C -40 to +125 Typ. Max. Unit - - 0.39 V - - 0.55 V IF=100mA IR1 - - 1.0 A IR2 - - 10.0 A VR=10V VR=40V 1/4 8.00.2 0.650.1 Min. www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 00.1 1.650.1 1PIN 1.650.1 1.70.05 5.50.2 3.50.05 1.750.1 4.00.1 Conditions IF=10mA 2011.10 - Rev.A Data Sheet RB480Y-40 1000 1000 Ta=125C REVERSE CURRENT:IR(A) Ta=125C 100 FORWARD CURRENT:IF(mA) 100 Ta=75C 10 Ta=25C 1 0.1 Ta=-25C 1 Ta=25C 0.1 0.01 0.01 0.001 Ta=75C 10 Ta=-25C 0.001 0 100 200 300 400 500 0.0001 600 0 10 20 40 510 100 FORWARD VOLTAGE:VF(mV) f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) 30 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 10 Ta=25C IF=100mA n=30pcs 500 490 480 AVE:491.2mV 470 1 0 10 20 460 30 VF DISPERSION MAP REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 1000 Ta=25C VR=10V n=30pcs 800 700 600 500 400 300 200 AVE:67.0nA Ta=25C f=1MHz VR=0V n=10pcs 29 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) 900 28 27 26 25 24 23 22 100 AVE:23.87pF 21 0 20 IR DISPERSION MAP www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. Ct DISPERSION MAP 2/4 2011.10 - Rev.A Data Sheet RB480Y-40 20 20 Ta=25C IF=0.1A IR=0.1A Irr=0.1*IR n=10pcs 15 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc 8.3ms 10 5 15 10 5 AVE:6.2ns AVE:3.70A 0 0 IFSM DISPERSION MAP trr DISPERSION MAP 10 10 9 IFSM 8 8.3ms 7 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 9 8.3ms 1cyc. 6 5 4 3 6 5 4 3 2 1 1 1 10 0 100 1 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 1000 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.25 Rth(j-a) D.C. 0.2 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THERMAL IMPEDANCE:Rth (C/W) time 7 2 0 IFSM 8 Rth(j-c) 100 D=1/2 Sin(180) 0.15 0.1 0.05 10 0.0001 0.001 0.01 0.1 1 10 100 0 1000 www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 0 0.1 0.2 0.3 0.4 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS 3/4 2011.10 - Rev.A Data Sheet 0.01 0.5 0.008 0.4 D.C. AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) RB480Y-40 0.006 D=1/2 0.004 Sin(180) 0 10 20 30 t T D=t/T VR=20V Tj=125C 0.3 D=1/2 0.2 Sin(180) 0 40 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(C) DERATING CURVE(Io-Ta) 0.5 30 Io 0A VR t 0.4 D.C. T D=t/T VR=20V Tj=125C 0.3 D=1/2 0.2 Sin(180) 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) VR D.C. REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0.1 0 Io 0V 0.1 0.002 0 0A 20 15 10 AVE:5.60kV AVE:5.1kV 5 0 25 50 75 100 0 125 CASE TEMPERATURE:Tc(C) DERATING CURVE(Io-Tc) www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP 4/4 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. R1120A