BPW96B, BPW96C
www.vishay.com Vishay Semiconductors
Rev. 1.8, 23-Aug-11 1Document Number: 81532
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon NPN Phototransistor
DESCRIPTION
BPW96 is a silicon NPN phototransistor with high radiant
sensitivity in clear, T-1¾ plastic package. It is sensitive to
visible and near infrared radiation.
FEATURES
Package type: leaded
Package form: T-1¾
Dimensions (in mm): Ø 5
Leads with stand-off
High photo sensitivity
High radiant sensitivity
Suitable for visible and near infrared radiation
Fast response times
Angle of half sensitivity: ϕ = ± 20°
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
Detector in electronic control and drive circuits
Note
Test condition see table “Basic Characteristics”
Note
MOQ: minimum order quantity
94 8391
PRODUCT SUMMARY
COMPONENT Ica (mA) ϕ (deg) λ0.1 (nm)
BPW96B 2.5 to 7.5 ± 20 450 to 1080
BPW96C 4.5 to 15 ± 20 450 to 1080
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
BPW96B Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
BPW96C Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Collector emitter voltage VCEO 70 V
Emitter collector voltage VECO 5V
Collector current IC50 mA
Collector peak current tp/T 0.5, tp 10 ms ICM 100 mA
Power dissipation Tamb 47 °C PV150 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 100 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature t 3 s Tsd 260 °C
Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm2 R
thJA 350 K/W
BPW96B, BPW96C
www.vishay.com Vishay Semiconductors
Rev. 1.8, 23-Aug-11 2Document Number: 81532
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
0
40
80
120
160
200
PV - Power Dissipation (mW)
Tamb - Ambient Temperature (°C)
100806040200
94 8300
RthJA
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Collector emitter breakdown voltage IC = 1 mA V(BR)CEO 70 V
Collector emitter dark current VCE = 20 V, E = 0 ICEO 1 200 nA
Collector emitter capacitance VCE = 5 V, f = 1 MHz, E = 0 CCEO 3pF
Angle of half sensitivity ϕ± 20 deg
Wavelength of peak sensitivity λp850 nm
Range of spectral bandwidth λ0.1 450 to 1080 nm
Collector emitter saturation voltage Ee = 1 mW/cm2, λ = 950 nm,
IC = 0.1 mA VCEsat 0.3 V
Turn-on time VS = 5 V, IC = 5 mA, RL = 100 Ωton 2.0 μs
Turn-off time VS = 5 V, IC = 5 mA, RL = 100 Ωtoff 2.3 μs
Cut-off frequency VS = 5 V, IC = 5 mA, RL = 100 Ωfc180 kHz
TYPE DEDICATED CHARACTERISTICS
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Collector light current Ee = 1 mW/cm2, λ = 950 nm,
VCE = 5 V
BPW96B Ica 2.5 4.5 7.5 mA
BPW96C Ica 4.5 8 15 mA
BPW96B, BPW96C
www.vishay.com Vishay Semiconductors
Rev. 1.8, 23-Aug-11 3Document Number: 81532
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Collector Dark Current vs. Ambient Temperature
Fig. 2 - Relative Collector Current vs. Ambient Temperature
Fig. 3 - Collector Light Current vs. Irradiance
Fig. 4 - Collector Light Current vs. Collector Emitter Voltage
Fig. 5 - Collector Emitter Capacitance vs. Collector Emitter Voltage
Fig. 6 - Turn-on/Turn-off Time vs. Collector Current
20 100
40 60 80
10
10
1
10
2
10
3
10
4
V
CE
= 20 V
T
amb
- Ambient Temperature (°C)
I
CEO
- Collector Dark Current (nA)
94 8304
0
0.6
0.8
1.0
1.2
1.4
2.0
20 40 60 80 100
1.6
1.8
λ
94 8239
T
amb
- Ambient Temperature (°C)
I
ca rel
- Relative Collector Current
V
CE
= 5 V
E
e
= 1 mW/cm2
= 950 nm
0.01 0.1 1
0.01
0.1
1
10
10
94 8296
VCE =5V
λ= 950 nm
BPW96B
BPW96C
Ee- Irradiance (mW/cm2)
I - Collector Light Current (mA)
ca
0.1 1 10
0.1
1
10
I - Collector Light Current (mA)
ca
V
CE
- Collector Emitter Voltage (V)
100
94 8297
BPW96B E
e
= 1 mW/cm²
0.5 mW/cm²
0.1 mW/cm²
0.2 mW/cm²
0.05 mW/cm²
λ
=950nm
0.1 1 10
0
2
4
6
8
10
V
CE - Collector Emitter Voltage (V)
100
94 8301
C - Collector Emitter Capacitance (pF)
CEO
f = 1 MHz
0
0 2 4 6 8 10 12 14
2
8
6
4
V
CE
= 5 V
R
L
= 100 Ω
λ = 950 nm
t
off
t
on
I
C
- Collector Current (mA)
t
on
/t
off
- Turn-on/Turn-off Time (µs)
94 8293
BPW96B, BPW96C
www.vishay.com Vishay Semiconductors
Rev. 1.8, 23-Aug-11 4Document Number: 81532
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Relative Spectral Sensitivity vs. Wavelength Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
400 600 1000
0
0.2
0.4
0.6
0.8
1.0
S (λ)
rel
- Relative Spectral Sensitivity
λ - Wavelength (nm)
94 8348
800
0.4 0.2 0
94 8299
0.6
0.9
0.8
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
Srel - Relative Radiant Sensitivity
ϕ - Angular Displacement
Issue:1; 01.07.96
± 0.15
Drawing-No.: 6.544-5086.01-4
specifications
according to DIN
technical drawings
0.5
Area not plane
± 0.15
± 0.3
8.6
± 0.5
5.75
± 0.15
< 0.7
E
C
1.5
7.6
Ø 5
1
0.8
- 0.1
+ 0.2
- 0.1
+ 0.2
± 0.3
+ 0.15
- 0.1
+ 0.2
± 0.25
0.63
Chip position
2.54 nom.
12.3
(4.8)
35.3
R 2.45 (sphere)
96 12192
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Revision: 12-Mar-12 1Document Number: 91000
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