Jun. 2004
CM200RL-12NF
APPLICATION
AC drive inverters & Servo controls, etc
MITSUBISHI IGBT MODULES
CM200RL-12NF
HIGH POWER SWITCHING USE
¡IC...................................................................200A
¡VCES ............................................................600V
¡Insulated Type
¡7-elements in a pack
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
LABEL
U
BNP
VW
1
18
CN
11
WP VP UP
202016.5
18
110
±0.5
(6.05) (6.05)
11.7
262617.5
135
10.5
10.5
18.7
110
10.510.5
10.5 10.5
(13)
48.75
13.75
26.5
4
4-φ5.5
MOUNTING HOLES
78
±0.5
(6.05) (6.05)
2530.5 25 (13)
11
46.3
A
B
13
24.1
(SCREWING DEPTH)
6-M5 NUTS
+1
–0.5
Housing Type of A and B
(J.S.T.Mfg.Co.Ltd)
A = B8P-VH-FB-B, B = B2P-VH-FB-B
P
BU
N
CN-7
CN-8 CN-5
CN-6
UP-1
UP-2 V
CN-3
CN-4
VP-1
VP-2
W
CN-1
CN-2
WP-1
WP-2
CIRCUIT DIAGRAM
Jun. 2004
600
±20
200
400
200
400
890
MITSUBISHI IGBT MODULES
CM200RL-12NF
HIGH POWER SWITCHING USE
V
V
A
A
A
A
W
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
G-E Short
C-E Short
DC, TC = 88°C*1
Pulse (Note 2)
Pulse (Note 2)
TC = 25°C
Symbol Parameter
Collector current
Emitter current
Conditions UnitRatings
VCES
VGES
IC
ICM
IE (
Note 1
)
IEM (
Note 1
)
PC (
Note 3
)
ABSOLUTE MAXIMUM RATINGS (Tj = 25°C)
INVERTER PART
600
±20
100
200
540
600
100
V
V
A
A
W
V
A
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Repetitive peak reverse voltage
Forward current
G-E Short
C-E Short
DC, TC = 99°C*1
Pulse (Note 2)
TC = 25°C
Clamp diode part
Clamp diode part
Symbol Parameter
Collector current
Conditions UnitRatings
VCES
VGES
IC
ICM
PC (
Note 3
)
VRRM
IFM
BRAKE PART
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
2.5 ~ 3.5
750
°C
°C
V
N • m
N • m
g
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight
Main Terminal to base plate, AC 1 min.
Main Terminal M5
Mounting holes M5
Typical value
Symbol Parameter Conditions UnitRatings
Tj
Tstg
Viso—
—
—
(COMMON RATING)
Jun. 2004
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V Tj = 25°C
Tj = 125°C
VCC = 300V, IC = 100A, VGE = 15V
IF = 100A
IGBT part*1
Clamp diode part*1
IC = 10mA
IC = 100A, VGE = 15V
VCE = 10V
VGE = 0V
IC = 20mA, VCE = 10V
IC = 200A, VGE = 15V
VCE = 10V
VGE = 0V
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V Tj = 25°C
Tj = 125°C
VCC = 300V, IC = 200A, VGE = 15V
VCC = 300V, IC = 200A
VGE1 = VGE2 = 15V
RG = 3.1Ω, Inductive load switching operation
IE = 200A
IE = 200A, VGE = 0V
IGBT part (1/6 module)*1
FWDi part (1/6 module)*1
Case to fin, Thermal compound Applied (1/6 module)*2
MITSUBISHI IGBT MODULES
CM200RL-12NF
HIGH POWER SWITCHING USE
1
0.5
2.2
—
30
3.7
1.2
—
120
100
300
300
150
—
2.8
0.14
0.22
—
31
mA
µA
nF
nF
nF
nC
ns
ns
ns
ns
µC
V
°C/W
°C/W
°C/W
Ω
—
—
1.7
1.7
—
—
—
800
—
—
—
—
—
4.8
—
—
—
0.051
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.1
7V
V
68
ns
Collector cutoff current
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
T urn-on rise time
T urn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Contact thermal resistance
External gate resistance
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Thermal resistance
ICES
IGES
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Note 1
)
Qrr (
Note 1
)
VEC(
Note 1
)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
RG
Symbol Parameter
VGE(th)
VCE(sat)
Unit
Typ.
Limits
Min. Max.
Test conditions
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
INVERTER PART
1
0.5
2.2
—
15
1.9
0.6
—
2.8
0.23
0.41
63
mA
µA
nF
nF
nF
nC
V
°C/W
°C/W
Ω
—
—
1.7
1.7
—
—
—
400
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.3
7V
V
68
Collector cutoff current
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Forward voltage drop
Thermal resistance
External gate resistance
Gate-emitter threshold voltage
Collector-emitter saturation voltage
ICES
IGES
Cies
Coes
Cres
QG
VFM
Rth(j-c)Q
Rth(j-c)R
RG
Symbol Parameter
VGE(th)
VCE(sat)
*1 : Tc measured point is just under the chips.
If you use this value, Rth(f-a) should be measured just under the chips.
*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause neglible temperature rise.
Unit
Typ.
Limits
Min. Max.
Test conditions
BRAKE PART
Jun. 2004
MITSUBISHI IGBT MODULES
CM200RL-12NF
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
0
400
300
200
100
T
j
= 25°C
11
12
10
98
V
GE
=
20V 15
0246810
0
10
1
10
2
2
3
5
7
10
3
2
3
5
7
0 100 200 300 400
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
10
8
6
4
2
02012 146 8 10 16 18
T
j
= 25°C
I
C
= 200A
I
C
= 400A
I
C
= 60A
12 435
T
j
= 25°C
T
j
= 125°C
10
–12
10
0
357 2
10
1
357 2
10
2
357
C
ies
C
oes
C
res
V
GE
= 0V 10
0
10
1
2
3
5
7
10
2
2
3
5
7
10
3
2
3
5
7
10
–1
10
0
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
10
1
10
2
57
10
3
23 5723
Conditions:
V
CC
= 300V
V
GE
= ±15V
R
G
= 3.1Ω
T
j
= 125°C
Inductive load
t
d(on)
t
d(off)
t
f
t
r
0
4
3
2
1
13
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
COLLECTOR CURRENT I
C
(A)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT I
E
(A)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
CAPACITANCE–V
CE
CHARACTERISTICS
(TYPICAL)
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
SWITCHING TIME (ns)
COLLECTOR CURRENT I
C
(A)
Jun. 2004
MITSUBISHI IGBT MODULES
CM200RL-12NF
HIGH POWER SWITCHING USE
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
EMITTER CURRENT I
E
(A)
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CURRENT l
rr
(A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (j–c)
(ratio)
TIME (s)
RECOVERY LOSS vs. I
E
(TYPICAL)
RECOVERY LOSS (mJ/pulse)
EMITTER CURRENT I
E
(A)
SWITCHING LOSS vs.
COLLECTOR CURRENT
(TYPICAL)
SWITCHING LOSS (mJ/pulse)
COLLECTOR CURRENT I
C
(A)
RECOVERY LOSS vs.
GATE RESISTANCE
(TYPICAL)
RECOVERY LOSS (mJ/pulse)
GATE RESISTANCE R
G
(Ω)
SWITCHING LOSS vs.
GATE RESISTANCE
(TYPICAL)
SWITCHING LOSS (mJ/pulse)
GATE RESISTANCE R
G
(Ω)
10
1
10
2
23 57
10
3
23 57
10
1
10
2
2
3
5
7
10
3
2
3
5
7
t
rr
I
rr
Conditions:
V
CC
= 300V
V
GE
= ±15V
R
G
= 3.1Ω
T
j
= 25°C
Inductive load
10
1
10
0
10
–1
2
3
5
7
2
3
5
7
10
1
10
2
57
10
3
23 5723
Conditions:
V
CC
= 300V
V
GE
= ±15V
R
G
= 3.1Ω
T
j
= 125°C
Inductive load
C snubber at bus
Err
10
1
10
0
10
–1
2
3
5
7
2
3
5
7
10
1
10
2
57
10
3
23 5723
Conditions:
V
CC
= 300V
V
GE
= ±15V
R
G
= 3.1Ω
T
j
= 125°C
Inductive load
C snubber at bus
Esw(off)
Esw(on)
10
2
10
1
10
0
Conditions:
V
CC
= 300V
V
GE
= ±15V
I
C
= 200A
T
j
= 125°C
Inductive load
C snubber at bus Esw(off)
Esw(on)
2
3
5
7
2
3
5
7
10
0
10
1
57
10
2
23 5723
10
–3
10
–5
10
–4
10
0
7
5
3
2
10
–2
7
5
3
2
10
–1
7
5
3
2
10
–3
23 57 23 57 23 57 23 57
10
1
10
–2
10
–1
10
0
10
–3
10
–3
7
5
3
2
10
–2
7
5
3
2
10
–1
23 57 23 57
Single Pulse,
T
C
= 25°C
Under the chip
IGBT part:
Per unit base =
R
th(j–c)
= 0.14°C/W
FWDi part:
Per unit base =
R
th(j–c)
= 0.22°C/W
10
1
10
0
10
–1
2
3
5
7
2
3
5
7
10
0
10
1
57
10
2
23 5723
Conditions:
V
CC
= 300V
V
GE
= ±15V
I
E
= 200A
T
j
= 125°C
Inductive load
C snubber at bus
Err
Jun. 2004
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE VGE (V)
GATE CHARGE QG (nC)
400 800 1000200 600 1200
0
20
15
10
5
0
0
V
CC
= 300V
V
CC
= 200V
I
C
= 200A
MITSUBISHI IGBT MODULES
CM200RL-12NF
HIGH POWER SWITCHING USE
