RF & Protection Devices
Data Sheet
Revision 1.0, 2010-10-22
BFP450
High Linearity Low Noise Si NPN RF Transistor
Edition 2010-10-22
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BFP450
Data Sheet 3 Revision 1.0, 2010-10-22
Trademarks of Infineon Technologies AG
AURIX™, BlueMoon™, COMNEON™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™,
CORECONTROL™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™,
EiceDRIVER™, EUPEC™, FCOS™, HITFET™, HybridPACK™, ISOFACE™, I²RF™, IsoPACK™, MIPAQ™,
ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PROFET™, PRO-SIL™,
PRIMARION™, PrimePACK™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SMARTi™,
SmartLEWIS™, TEMPFET™, thinQ!™, TriCore™, TRENCHSTOP™, X-GOLD™, XMM™, X-PMU™,
XPOSYS™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, PRIMECELL™,
REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership.
Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation
Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation.
FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of
Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of
INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of
Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP.
MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2010-06-09
Revision History
Page or Item Subjects (changes since previous revision)
Revision 1.0, 2010-10-22
This datasheet replaces the revision from 20 April 2007.
The product itself has not been changed and the device characteristics remain unchanged.
Only the product description and information available in the datasheet have been expanded
and updated.
The old datasheet revision remains fully valid for those customers who have got the revision
from 20 April 2007.
1 Maximum collector current ICmax increased from 100 mA to 170 mA and maximum DC power
dissipation Ptot from 450 mW to 500 mW .
2 Typical values for leakage currents included.
3 Description of electrical parameters updated.
4, 5 Spice GP model parameters removed from datasheet, updated model parameters shifted to
the internet simulation data section.
6 Pulse load curves removed.
7, 8 AC characteristic curves updated.
BFP450
Table of Contents
Data Sheet 4 Revision 1.0, 2010-10-22
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.2 General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.3 Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.4 Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
4.5 Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
5 Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
6 Package Information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Table of Contents
BFP450
List of Figures
Data Sheet 5 Revision 1.0, 2010-10-22
Figure 1 Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Figure 2 BFP450 Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 3 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter . . . . . . . . . . . . . . . . . 15
Figure 4 DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 5 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V. . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 6 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 16
Figure 7 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 17
Figure 8 Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 9 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters. . . . . . . . . . . . . . . . . 18
Figure 10 Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 11 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 90 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 12 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . 20
Figure 13 Maximum Power Gain Gmax = f (VCE), IC = 90 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 20
Figure 14 Input Matching S11 = f ( f ), VCE = 3 V, IC = 50 / 90 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 15 Source Impedance for Minimum Noise Figure Zopt = f ( f ), VCE = 3 V, IC = 50 / 90 mA . . . . . . . . 21
Figure 16 Output Matching S22 = f ( f ), VCE = 3 V, IC = 50 / 90 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 17 Noise Figure NFmin = f ( f ), VCE = 3 V, IC = 50 / 90 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 18 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 23
Figure 19 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 23
Figure 20 Comparison Noise Figure NF50 / NFmin= f (IC), VCE = 3 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . 24
Figure 21 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 22 Package Foot Print . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 23 Marking Description (Marking BFP450: ANs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 24 Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
List of Figures
BFP450
List of Tables
Data Sheet 6 Revision 1.0, 2010-10-22
Table 1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 2 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 3 DC Characteristics at TA= 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Table 4 General AC Characteristics at TA= 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Table 5 AC Characteristics, VCE = 3 V, f= 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 6 AC Characteristics, VCE = 3 V, f= 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 7 AC Characteristics, VCE = 3 V, f= 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 8 AC Characteristics, VCE = 3 V, f= 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 9 AC Characteristics, VCE = 3 V, f= 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 10 AC Characteristics, VCE = 3 V, f= 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 11 AC Characteristics, VCE = 3 V, f= 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
List of Tables
12
3
4
Product Name Package Pin Configuration Marking
BFP450 SOT343 1 = B 2 = E 3 = C 4 = E ANs
High Linearity Low Noise Si NPN RF Transistor
BFP450
Data Sheet 7 Revision 1.0, 2010-10-22
1 Features
• Highly linear low noise driver amplifier for all RF frontends
up to 2.5 GHz
• Output compression point OP1dB = 18.5 dBm
at 90 mA, 3 V, 1.9 GHz, 50 Ω system
• Output 3rd order intermodulation point OIP3 = 31 dBm
at 90 mA, 3 V, 1.9 GHz, 50 Ω system
• Maximum available gain Gma = 15.5 dB at 50 mA, 3 V, 1.9 GHz
• Minimum noise figure NFmin = 1.7 dB at 50 mA, 3 V, 1.9 GHz
• Based on Infineon´s reliable, high volume 25 GHz SIEGET™ line
• Easy to use Pb-free (RoHS compliant) standard package with visible
leads
• Qualified according AEC Q101
Application Examples
Driver amplifier
• ISM bands 434 and 868 MHz
• 1.9 GHz cordless phones
• CATV LNA
Transmitter driver amplifier
• 2.4 GHz WLAN and Bluetooth
Output stage LNA for active antennas
• TV, GPS, SDARS, 2.4 GHz WLAN, etc
Suitable for 3 - 5.5 GHz oscillators
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
BFP450
Maximum Ratings
Data Sheet 8 Revision 1.0, 2010-10-22
2 Maximum Ratings
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Table 1 Maximum Ratings
Parameter Symbol Values Unit Note / Test Condition
Min. Max.
Collector emitter voltage VCEO Open base
–4.5V
TA = 25 °C
–4.1V
TA = -55 °C
Collector emitter voltage VCES – 15 V Emitter / base shortened
Collector base voltage VCBO – 15 V Open emitter
Emitter base voltage VEBO – 1.5 V Open collector
Collector current IC–170mA–
Base current IB–10mA–
Total power dissipation1)
1)TS is the soldering point temperature. TS measured on the emitter lead at the soldering point of the pcb.
Ptot –500mWTS≤90 °C
Junction temperature TJ–150°C–
Storage temperature TStg -65 150 °C –
BFP450
Thermal Characteristics
Data Sheet 9 Revision 1.0, 2010-10-22
3 Thermal Characteristics
Figure 1 Total Power Dissipation Ptot = f (Ts)
Table 2 Thermal Resistance
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Junction - soldering point1)
1)For calculation of RthJA please refer to Application Note Thermal Resistance AN077
RthJS ––120K/W–
Ts [°C]
Ptot [mW]
0
100
200
300
400
500
600
0 50 100 150
Ts [°C]
Ptot [mW]
0
100
200
300
400
500
600
0 50 100 150
BFP450
Electrical Characteristics
Data Sheet 10 Revision 1.0, 2010-10-22
4 Electrical Characteristics
4.1 DC Characteristics
4.2 General AC Characteristics
Table 3 DC Characteristics at TA=25°C
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Collector emitter breakdown voltage V(BR)CEO 4.55–VIC=1mA, IB=0
Open base
Collector emitter leakage current ICES ––10µAVCE =15V, VBE =0
–130nA
VCE =3V, VBE =0
Emitter/base shortened
Collector base leakage current ICBO –130nAVCB =3V, IE=0
Open emitter
Emitter base leakage current IEBO –0.13µAVEB =0.5V, IC=0
Open collector
DC current gain hFE 60 95 130 VCE =4V, IC=50mA
50 85 120 VCE =3V, IC=90mA
Pulse measured
Table 4 General AC Characteristics at TA=25°C
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Transition frequency fT18 24 – GHz VCE =3V, IC=90mA,
f=1GHz
Collector base capacitance CCB – 0.48 0.8 pF VCB =3V, VBE =0 V
f=1MHz
Emitter grounded
Collector emitter capacitance CCE –1.2–pFVCE =3V, VBE =0 V
f=1MHz
Base grounded
Emitter base capacitance CEB –1.7–pFVEB =0.5V, VCB =0 V
f=1MHz
Collector grounded
BFP450
Electrical Characteristics
Data Sheet 11 Revision 1.0, 2010-10-22
4.3 Frequency Dependent AC Characteristics
Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C
Figure 2 BFP450 Testing Circuit
Table 5 AC Characteristics, VCE = 3 V, f=150MHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB
High linearity operation point Gms –34.5– IC=50mA
Class A operation point Gms –35.5– IC=90mA
Transducer gain dB ZS= ZL= 50 Ω
High linearity operation point S21 –33– IC=50mA
Class A operation point S21 –33.5– IC=90mA
Minimum noise figure dB ZS=Zopt
Minimum noise figure NFmin –1.55– IC=50mA
Associated gain Gass –32– IC=50mA
Linearity dBm ZS= ZL= 50 Ω
1 dB gain compression point OP1dB –19– IC=90mA
3rd order intercept point OIP3–30.5– IC=90mA
IN
OUT
Bias -T
Bias-T
B
(Pin 1)
EC
E
VC
Top View
VB
BFP450
Electrical Characteristics
Data Sheet 12 Revision 1.0, 2010-10-22
Table 6 AC Characteristics, VCE = 3 V, f=450MHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB
High linearity operation point Gms –28.5– IC=50mA
Class A operation point Gms –29– IC=90mA
Transducer gain dB ZS= ZL= 50 Ω
High linearity operation point S21 –25– IC=50mA
Class A operation point S21 –25– IC=90mA
Minimum noise figure dB ZS=Zopt
Minimum noise figure NFmin –1.55– IC=50mA
Associated gain Gass –27.5– IC=50mA
Linearity dBm ZS= ZL= 50 Ω
1 dB gain compression point OP1dB –19– IC=90mA
3rd order intercept point OIP3–30– IC=90mA
Table 7 AC Characteristics, VCE = 3 V, f=900MHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB
High linearity operation point Gms –23– IC=50mA
Class A operation point Gms –23.5– IC=90mA
Transducer gain dB ZS= ZL= 50 Ω
High linearity operation point S21 –18.5– IC=50mA
Class A operation point S21 –19– IC=90mA
Minimum noise figure dB ZS=Zopt
Minimum noise figure NFmin –1.6– IC=50mA
Associated gain Gass –23– IC=50mA
Linearity dBm ZS= ZL= 50 Ω
1 dB gain compression point OP1dB –19– IC=90mA
3rd order intercept point OIP3–30.5– IC=90mA
BFP450
Electrical Characteristics
Data Sheet 13 Revision 1.0, 2010-10-22
Table 8 AC Characteristics, VCE = 3 V, f= 1.5 GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB
High linearity operation point Gma –18– IC=50mA
Class A operation point Gma –18– IC=90mA
Transducer gain dB ZS= ZL= 50 Ω
High linearity operation point S21 –14– IC=50mA
Class A operation point S21 –14– IC=90mA
Minimum noise figure dB ZS=Zopt
Minimum noise figure NFmin –1.65– IC=50mA
Associated gain Gass –17– IC=50mA
Linearity dBm ZS= ZL= 50 Ω
1 dB gain compression point OP1dB –19– IC=90mA
3rd order intercept point OIP3–31– IC=90mA
Table 9 AC Characteristics, VCE = 3 V, f= 1.9 GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB
High linearity operation point Gma –15.5– IC=50mA
Class A operation point Gma –15.5– IC=90mA
Transducer gain dB ZS= ZL= 50 Ω
High linearity operation point S21 9.5 11.5 – IC=50mA
Class A operation point S21 –11.5– IC=90mA
Minimum noise figure dB ZS=Zopt
Minimum noise figure NFmin –1.7– IC=50mA
Associated gain Gass –14– IC=50mA
Linearity dBm ZS= ZL= 50 Ω
1 dB gain compression point OP1dB –19– IC=90mA
3rd order intercept point OIP3–31– IC=90mA
BFP450
Electrical Characteristics
Data Sheet 14 Revision 1.0, 2010-10-22
Note:
1. AC paramter limits verified by random sampling
2. In order to get the NFmin values stated in this chapter the test fixture losses have been subtracted from all
measured result
3. OIP33 value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.2 MHz to 12 GHz.
Table 10 AC Characteristics, VCE = 3 V, f= 2.4 GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB
High linearity operation point Gma –13.5– IC=50mA
Class A operation point Gma –13.5– IC=90mA
Transducer gain dB ZS= ZL= 50 Ω
High linearity operation point S21 –9.5– IC=50mA
Class A operation point S21 –9.5– IC=90mA
Minimum noise figure dB ZS=Zopt
Minimum noise figure NFmin –1.8– IC=50mA
Associated gain Gass –12– IC=50mA
Linearity dBm ZS= ZL= 50 Ω
1 dB gain compression point OP1dB –19– IC=90mA
3rd order intercept point OIP3–30– IC=90mA
Table 11 AC Characteristics, VCE = 3 V, f= 3.5 GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB
High linearity operation point Gma –10– IC=50mA
Class A operation point Gma –10– IC=90mA
Transducer gain dB ZS= ZL= 50 Ω
High linearity operation point S21 –5.5– IC=50mA
Class A operation point S21 –6– IC=90mA
Minimum noise figure dB ZS=Zopt
Minimum noise figure NFmin –2.05– IC=50mA
Associated gain Gass –9– IC=50mA
Linearity dBm ZS= ZL= 50 Ω
1 dB gain compression point OP1dB –18.5– IC=90mA
3rd order intercept point OIP3–29.5– IC=90mA
BFP450
Electrical Characteristics
Data Sheet 15 Revision 1.0, 2010-10-22
4.4 Characteristic DC Diagrams
Figure 3 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter
Figure 4 DC Current Gain hFE = f (IC), VCE = 3 V
0 1 2 3 4 5
0
20
40
60
80
100
120
140
160
VCE [V]
IC [mA]
0.19mA
0.38mA
0.57mA
0.76mA
0.95mA
1.14mA
1.33mA
1.52mA
1.71mA
1.90mA
50
60
70
80
90
100
110
120
0.1 1 10 100 1000
IC [mA]
hFE
BFP450
Electrical Characteristics
Data Sheet 16 Revision 1.0, 2010-10-22
Figure 5 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V
Figure 6 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V
0.01
0.1
1
10
100
1000
0.6 0.65 0.7 0.75 0.8 0.85 0.9
V
BE
[V]
I
C
[mA]
0.0001
0.001
0.01
0.1
1
10
0.6 0.65 0.7 0.75 0.8 0.85 0.9
V
BE
[V]
I
B
[mA]
BFP450
Electrical Characteristics
Data Sheet 17 Revision 1.0, 2010-10-22
Figure 7 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
0.20.40.60.8 1 1.21.41.61.8
V
EB
[V]
I
B
[A]
BFP450
Electrical Characteristics
Data Sheet 18 Revision 1.0, 2010-10-22
4.5 Characteristic AC Diagrams
Figure 8 Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter
Figure 9 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters
0 20 40 60 80 100 120 140 160 180
0
5
10
15
20
25
30
IC [mA]
fT [GHz]
3.00V
2.00V
1.00V
4.00V
0 20 40 60 80 100 120 140 160 180
18
20
22
24
26
28
30
32
34
IC [mA]
OIP3 [dBm]
3V, 0.9GHz
4V, 0.9GHz
3V, 1.9GHz
4V, 1.9GHz
BFP450
Electrical Characteristics
Data Sheet 19 Revision 1.0, 2010-10-22
Figure 10 Collector Base Capacitance CCB = f (VCB), f = 1 MHz
Figure 11 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 90 mA
0 0.5 1 1.5 2 2.5 3 3.5 4
0
0.2
0.4
0.6
0.8
1
1.2
VCB [V]
Ccb [pF]
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
0
3
6
9
12
15
18
21
24
27
30
33
36
39
42
f [GHz]
G [dB]
Gms
Gma
|S21|2
BFP450
Electrical Characteristics
Data Sheet 20 Revision 1.0, 2010-10-22
Figure 12 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz
Figure 13 Maximum Power Gain Gmax = f (VCE), IC = 90 mA, f = Parameter in GHz
0 20 40 60 80 100 120 140 160 180 200
0
3
6
9
12
15
18
21
24
27
30
33
36
39
IC [mA]
G [dB]
5.50GHz
3.50GHz
2.40GHz
1.90GHz
1.50GHz
0.90GHz
0.45GHz
0.15GHz
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
0
3
6
9
12
15
18
21
24
27
30
33
36
39
VCE [V]
G [dB]
5.50GHz
3.50GHz
2.40GHz
1.90GHz
1.50GHz
0.90GHz
0.45GHz
0.15GHz
BFP450
Electrical Characteristics
Data Sheet 21 Revision 1.0, 2010-10-22
Figure 14 Input Matching S11 = f ( f ), VCE = 3 V, IC = 50 / 90 mA
Figure 15 Source Impedance for Minimum Noise Figure Zopt = f ( f ), VCE = 3 V, IC = 50 / 90 mA
10.1 0.2 0.3 0.4 0.5 21.5 3 4 5
0
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
0.03 to 10 GHz
1
2
3
4
5 6 7 8 9 10
90 mA
50 mA
10.1 0.2 0.3 0.4 0.5 21.5 3 4 5
0
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
0.45GHz
0.9GHz
1.9GHz
2.4GHz I
c
= 50mA
I
c
= 90mA
BFP450
Electrical Characteristics
Data Sheet 22 Revision 1.0, 2010-10-22
Figure 16 Output Matching S22 = f ( f ), VCE = 3 V, IC = 50 / 90 mA
Figure 17 Noise Figure NFmin = f ( f ), VCE = 3 V, IC = 50 / 90 mA, ZS = Zopt
10.1 0.2 0.3 0.4 0.5 21.5 3 4 5
0
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
0.03 to 10 GHz
1
2
3
4
5
6 7 8 9 10
90 mA
50 mA
0 0.5 1 1.5 2 2.5 3
0
0.5
1
1.5
2
2.5
3
f [GHz]
NFmin [dB]
IC = 50mA
IC = 90mA
BFP450
Electrical Characteristics
Data Sheet 23 Revision 1.0, 2010-10-22
Figure 18 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz
Figure 19 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz
0 20 40 60 80 100
0
0.5
1
1.5
2
2.5
3
Ic [mA]
NFmin [dB]
f = 0.45GHz
f = 0.9GHz
f = 1.9GHz
f = 2.4GHz
0 20 40 60 80 100
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Ic [mA]
NF50 [dB]
f = 0.45GHz
f = 0.9GHz
f = 1.9GHz
f = 2.4GHz
BFP450
Electrical Characteristics
Data Sheet 24 Revision 1.0, 2010-10-22
Figure 20 Comparison Noise Figure NF50 / NFmin= f (IC), VCE = 3 V, f = 1.9 GHz
Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as
a guarantee that all devices have identical characteristic curves. TA = 25°C.
0 20 40 60 80 100
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Ic [mA]
NF [dB]
ZS = ZSopt
ZS = 50Ω
BFP450
Simulation Data
Data Sheet 25 Revision 1.0, 2010-10-22
5 Simulation Data
For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please
refer to our internet website: www.infineon.com/rf.models. Please consult our website and download the latest
versions before actually starting your design.
You find the BFP450 SPICE GP model in the internet in MWO- and ADS-format, which you can import into these
circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is
ready to use for DC- and high frequency simulations. The terminals of the model circuit correspond to the pin
configuration of the device.
The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP450 SPICE
GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP
model itself.
BFP450
Package Information SOT343
Data Sheet 26 Revision 1.0, 2010-10-22
6 Package Information SOT343
Figure 21 Package Outline
Figure 22 Package Foot Print
Figure 23 Marking Description (Marking BFP450: ANs)
Figure 24 Tape Dimensions
SOT343-PO
V08
1.25
±0.1
0.1 MAX.
2.1
±0.1
0.15
+0.1
-0.05
0.3
+0.1
2
±0.2
±0.1
0.9
3
2
4
1
A
+0.1
0.6 A
M
0.2
1.3
-0.05
-0.05
0.15
0.1
M
4x
0.1
0.1 MIN.
0.6
SOT343-FP
V08
0.8
1.6
1.15
0.9
XY s
2009, June
Date Code (YM)
9 6
Marking
Pin 1
Manufacturer
SOT323-TP V02
0.2
4
2.15
8
2.3
1.1
Pin 1
