MSCXXXX.PDF 05-18-99
MS2321
DESCRIPTION:DESCRIPTION:
The MS2321 is a gold metallized, silicon NPN power transistor
designed for pulsed applications with low duty cycles such as
IFF, DME and TACAN. Internal impedance matching is utilized
for maximum broadband performance and simplified external
matching.
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
VCBO Collector-Base Voltage 65 V
VCES Collector-Emitter Voltage 65 V
VEBO Emitter-Base Voltage 3.5 V
ICDevice Current 1.5 A
PDISS Power Dissipation 87.5 W
TJJunction Temperature +200 °°C
TSTG Storage Temperature -65 to +150 °°C
Thermal DataThermal Data
RTH(J-C) Thermal Resistance Junction-case 2.0 °°C/W
FeaturesFeatures
· 1025 - 1150 MHz
· 50 VOLT OPERATION
· POUT = 15 WATTS
· GP = 10 dB MINIMUM
· 20:1 VSWR CAPABILITY @ RATED CONDITIONS
· COMMON BASE CONFIGURATION
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MSCXXXX.PDF 05-18-99
MS2321
ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25°°C)C)
STATICSTATIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
BVCBO IC = 10mA IE = 0mA 65 --- --- V
BVCES IC = 25mA VBE = 0V 65 --- --- V
BVEBO IE = 1mA IC = 0mA 3.5 --- --- V
ICES VCE = 50V IE = 0mA --- --- 2mA
HFE VCE = 5V IC = 100mA 10 --- 200 ---
DYNAMICDYNAMIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
POUT f =1025 - 1150 MHz PIN = 1.5W VCC = 50V 15 --- --- W
GPf =1025 - 1150 MHz PIN = 1.5W VCC = 50V 10 --- --- dB
hhCf =1025 - 1150 MHz PIN = 1.5W VCC = 50V 30 --- --- %
Condition
s
Pulse Width = 10 mms Duty Cycle = 1%
IMPEDANCE DATAIMPEDANCE DATA
FREQ ZIN (W)ZCL (W)
1025 MHz 3.0 + j5.0 5.8 + j7.5
1090 MHz 3.8 + j7.5 3.3 + j8.5
1150 MHz 2.5 + j20.0 6.0 + j8.9
VCC = 50V
PIN = 1.5W
MSCXXXX.PDF 05-18-99
MS2321
PACKAGE MECHANICAL DATAPACKAGE MECHANICAL DATA
