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HAL710, HAL730

Hall-Effect Sensors

with Direction Detection

Edition Sept. 15, 2004

6251-478-2DS

DATA SHEET

MICRONAS

2Sept. 15, 2004; 6251-478-2DS Micronas

Contents

Page Section Title

HAL710, HAL730 DATA SHEET

3 1. Introduction

31.1.Features

3 1.2. Family Overview

4 1.3. Marking Code

4 1.3.1. Special Marking of Prototype Parts

4 1.4. Operating Junction Temperature Range

4 1.5. Hall Sensor Package Codes

4 1.6. Solderability

4 1.7. Pin Connections

5 2. Functional Description

8 3. Specifications

8 3.1. Outline Dimensions

9 3.2. Dimensions of Sensitive Area

9 3.3. Positions of Sensitive Areas

9 3.4. Absolute Maximum Ratings

9 3.4.1. Storage and Shelf Life

10 3.5. Recommended Operating Conditions

10 3.6. Characteristics

14 4. Type Description

14 4.1. HAL710, HAL730

16 5. Application Notes

16 5.1. Ambient Temperature

16 5.2. Extended Operating Conditions

16 5.3. Signal Delay

16 5.4. Test Mode Activation

17 5.5. Start-up Behavior

18 6. Data Sheet History

DATA SHEET HAL710, HAL730

Micronas Sept. 15, 2004; 6251-478-2DS 3

Hall-Effect Sensors with Direction Detection

Release Note: Revision bars indicate significant

changes to the previous edition.

1. Introduction

The HAL710 and the HAL730 are monolithic inte-

grated Hall-effect sensors manufactured in CMOS

technology with two independent Hall plates S1 and

S2 spaced 2.35 mm apart. The devices have two

open-drain outputs:

– The Count Output operates like a single latched Hall

switch according to the magnetic field present at

Hall plate S1 (see Fig. 4–1).

– The Direction Output indicates the direction of a lin-

ear or rotating movement of magnetic objects.

In combination with an active target providing a

sequence of alternating magnetic north and south

poles, the sensors generate the signals required to

control position, speed, and direction of the target

movement.

The internal circuitry evaluates the direction of the

movement and updates the Direction Output at every

edge of the Count Signal (rising and falling). The state

of the Direction Output only changes at a rising or fall-

ing edge of the Count Output.

The design ensures a setup time for the Direction Out-

put with respect to the corresponding Count Signal

edge of 1/2 clock periods (1 µs minimum).

The devices include temperature compensation and

active offset compensation. These features provide

excellent stability and matching of the switching points

in the presence of mechanical stress over the whole

temperature and supply voltage range. This is required

by systems determining the direction from the compar-

ison of two signals.

The sensors are designed for industrial and automo-

tive applications and operate with supply voltages

from 3.8 V to 24 V in the ambient temperature range

from −40 °C up to 125 °C.

The HAL710 and the HAL730 are available in the

SMD-package SOT89B-2.

1.1. Features

– generation of Count Signals and Direction Signals

– delay of the Count Signals with respect to the

Direction Signal of 1 µs minimum

– switching type: latching

– switching offset compensation at typically 150 kHz

– operation from 3.8 V to 24 V supply voltage

– overvoltage protection at all pins

– reverse-voltage protection at VDD-pin

– robustness of magnetic characteristics against

mechanical stress

– short-circuit protected open-drain outputs

by thermal shut down

– constant switching points over a wide

supply voltage range

– EMC corresponding to ISO 7637

1.2. Family Overview

The types differ according to the behavior of the Direc-

tion Output.

Type Direction Output:

Definition of Output State

HAL710 Output high, when

edge of comparator 1 precedes

edge of comparator 2

HAL730 Output high, when

edge of comparator 2 precedes

edge of comparator 1

HAL710, HAL730 DATA SHEET

4Sept. 15, 2004; 6251-478-2DS Micronas

1.3. Marking Code

All Hall sensors have a marking on the package sur-

face (branded side). This marking includes the name

of the sensor and the temperature range.

1.3.1. Special Marking of Prototype Parts

Prototype parts are coded with an underscore beneath

the temperature range letter on each IC. They may be

used for lab experiments and design-ins but are not

intended to be used for qualification tests or as produc-

tion parts.

1.4. Operating Junction Temperature Range

The Hall sensors from Micronas are specified to the

chip temperature (junction temperature TJ).

K: TJ = −40 °C to +140 °C

E: TJ = −40 °C to +100 °C

Note: Due to power dissipation, there is a difference

between the ambient temperature (TA) and junc-

tion temperature. Please refer to section 5.1. on

page 16 for details.

1.5. Hall Sensor Package Codes

Hall sensors are available in a wide variety of packag-

ing versions and quantities. For more detailed informa-

tion, please refer to the brochure: “Hall Sensors:

Ordering Codes, Packaging, Handling”.

1.6. Solderability

all packages: according to IEC68-2-58

During soldering reflow processing and manual

reworking, a component body temperature of 260 °C

should not be exceeded.

1.7. Pin Connections

Fig. 1–1: Pin configuration

Type Temperature Range

K E

HAL710 710K 710E

HAL730 730K 730E

HALXXXPA-T

Temperature Range: K or E

Package: SF for SOT89B-2

Type: 710

Example: HAL710SF-K

→Type: 710

→Package: SOT89B-2

→Temperature Range: TJ = −40 °C to +140 °C

1VDD

4GND

3 Count Output

2 Direction Output

DATA SHEET HAL710, HAL730

Micronas Sept. 15, 2004; 6251-478-2DS 5

2. Functional Description

The HAL710 and the HAL730 are monolithic inte-

grated circuits with two independent subblocks each

consisting of a Hall plate and the corresponding com-

parator. Each subblock independently switches the

comparator output in response to the magnetic field at

the location of the corresponding sensitive area. If a

magnetic field with flux lines perpendicular to the sen-

sitive area is present, the biased Hall plate generates a

Hall voltage proportional to this field. The Hall voltage

is compared with the actual threshold level in the com-

parator.

The output of comparator 1 (connected to S1) directly

controls the Count Output. The outputs of both com-

parators enter the Direction Detection Block controlling

the state of the Direction Output. The Direction Output

is updated at every edge of comparator 1 (rising and

falling). The previous state of the Direction Output is

maintained between two edges of the Count Output

and in case the edges at comparator 1 and comparator

2 occur in the same clock period. The subblocks are

designed to have closely matched switching points.

The temperature-dependent bias – common to both

subblocks – increases the supply voltage of the Hall

plates and adjusts the switching points to the decreas-

ing induction of magnets at higher temperatures. If the

magnetic field exceeds the threshold levels, the com-

parator switches to the appropriate state. The built-in

hysteresis prevents oscillations of the outputs.

In order to achieve good matching of the switching

points of both subblocks, the magnetic offset caused

by mechanical stress is compensated for by use of

switching offset compensation techniques. Therefore,

an internal oscillator provides a two-phase clock to

both subblocks. For each subblock, the Hall voltage is

sampled at the end of the first phase. At the end of the

second phase, both sampled and actual Hall voltages

are averaged and compared with the actual switching

point.

Shunt protection devices clamp voltage peaks at the

output pins and VDD-pin together with external series

resistors. Reverse current is limited at the VDD-pin by

an internal series resistor up to −15 V. No external

reverse protection diode is needed at the VDD-pin for

reverse voltages ranging from 0 V to −15 V.

Fig. 2–1: HAL710 timing diagram with respect to the

clock phase

Fig. 2–2 and Fig. 2–3 on page 6 show how the output

signals are generated by the HAL710 and the

HAL730. The magnetic flux density at the locations of

the two Hall plates is shown by the two sinusodial

curves at the top of each diagram. The magnetic

switching points are depicted as dashed lines for each

Hall plate separately.

At the time t = 0, the signal S2 precedes the signal S1.

The Direction Output is in the correct state according

to the definition of the sensor type.

When the phase of the magnetic signal changes its

sign, the Direction-Output switches its state with the

next signal edge of the Count Output.

Idd

Direction

VOH

VOL

Count

VOH

VOL

BS2 t

BS2on

Clock

1/fosc tf

Output

BS1

BS1on

Idd

HAL710, HAL730 DATA SHEET

6Sept. 15, 2004; 6251-478-2DS Micronas

Fig. 2–2: HAL710 timing diagram

Fig. 2–3: HAL730 timing diagram

time

Bon,S1

Boff,S1

Boff,S2

Bon,S2

S1 Count

Output Pin 3

Direction

Output Pin 2

HAL710

time

Bon,S1

Boff,S1

Boff,S2

Bon,S2

S1 Count

Output Pin 3

Direction

Output Pin 2

HAL730

DATA SHEET HAL710, HAL730

Micronas Sept. 15, 2004; 6251-478-2DS 7

Fig. 2–4: HAL710 and HAL730 block diagram

Reverse

Voltage and

Overvoltage

Protection

Temperature

Dependent

Bias

Hysteresis

Control

Hall Plate 1

Switch

Comparator

VDD

Hall Plate 2

Switch

Comparator

Clock

Output 3

Count Output

Direction Output 2

Direction Output

Short Circuit

and

Overvoltage

Protection

Test-Mode

Control

S2 Detection

GND

HAL710, HAL730 DATA SHEET

8Sept. 15, 2004; 6251-478-2DS Micronas

3. Specifications

3.1. Outline Dimensions

Fig. 3–1:

SOT89B-2: Plastic Small Outline Transistor package, 4 leads, with two sensitive areas

Weight approximately 0.039 g

DATA SHEET HAL710, HAL730

Micronas Sept. 15, 2004; 6251-478-2DS 9

3.2. Dimensions of Sensitive Area

0.25 mm × 0.12 mm

3.3. Positions of Sensitive Areas

3.4. Absolute Maximum Ratings

Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This

is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute

maximum rating conditions for extended periods will affect device reliability.

This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric

fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than abso-

lute maximum-rated voltages to this high-impedance circuit.

All voltages listed are referenced to ground (GND).

3.4.1. Storage and Shelf Life

The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of

30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required.

Solderability is guaranteed for one year from the date code on the package. Solderability has been tested after stor-

ing the devices for 16 hours at 155 °C. The wettability was more than 95%.

SOT89B-2

x1+x2(2.35±0.001) mm

x1=x21.175 mm nominal

y 0.975 mm nominal

Symbol Parameter Pin No. Min. Max. Unit

VDD Supply Voltage 1 −15 281) V

VOOutput Voltage 2, 3 −0.3 281) V

IOContinuous Output Current 2, 3 −201) mA

TJJunction Temperature Range −40 170 °C

1) as long as TJmax is not exceeded

HAL710, HAL730 DATA SHEET

10 Sept. 15, 2004; 6251-478-2DS Micronas

3.5. Recommended Operating Conditions

Functional operation of the device beyond those indicated in the “Recommended Operating Conditions” of this speci-

fication is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime.

All voltages listed are referenced to ground (GND).

3.6. Characteristics

at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24 V, GND = 0 V

at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.

Typical Characteristics for TJ = 25 °C and VDD = 5 V.

Symbol Parameter Pin No. Min. Typ. Max. Unit

VDD Supply Voltage 1 3.8 −24 V

IOContinuous Output Current 3 0 −10 mA

VOOutput Voltage

(output switch off)

30−24 V

Symbol Parameter Pin No. Min. Typ. Max. Unit Test Conditions

IDD Supply Current 1 3 5.5 9 mA TJ = 25 °C

IDD Supply Current

over Temperature Range 12710mA

VDDZ Overvoltage Protection

at Supply 1−28.5 32 V IDD = 25 mA, TJ = 25 °C, t = 2 ms

VOZ Overvoltage Protection

at Output 2,3 −28 32 V IOL = 20 mA, TJ = 25 °C, t = 15 ms

VOL Output Voltage 2,3 −130 280 mV IOL = 10 mA, TJ = 25 °C

VOL Output Voltage over

Temperature Range 2,3 −130 400 mV IOL = 10 mA,

IOH Output Leakage Current 2,3 −0.06 0.1 µA Output switched off, TJ = 25 °C,

VOH = 3.8 V to 24 V

IOH Output Leakage Current over

Temperature Range 2,3 −−10 µA Output switched off, TJ ≤ 140 °C,

VOH = 3.8 V to 24 V

fosc Internal Sampling Frequency over

Temperature Range −100 150 −kHz

ten(O) Enable Time of Output after

Setting of VDD

1−50 −µsV

DD = 12 V,

B>Bon + 2 mT or B<Boff − 2mT

trOutput Rise Time 2,3 −0.2 −µsV

DD = 12 V, RL= 2.4 kΩ, CL= 20 pF

tfOutput FallTime 2,3 −0.2 −µsV

DD = 12 V, RL= 2.4 kΩ, CL= 20 pF

RthSB

case

SOT89B-2

Thermal Resistance Junction to

Substrate Backside −−150 200 K/W Fiberglass Substrate

30 mm x 10mm x 1.5mm,

pad size

DATA SHEET HAL710, HAL730

Micronas Sept. 15, 2004; 6251-478-2DS 11

–15

–10

–5

–15–10 –5 0 5 10 15 20 25 30 35 V

VDD

IDD TA = –40 °C

TA = 25 °C

TA=140 °C

HAL7xx

Fig. 3–2: Typical supply current

versus supply voltage

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

12345678

VDD

IDD

TA = –40 °C

TA = 25 °C

TA = 140 °C

TA = 100 °C

HAL7xx

Fig. 3–3: Typical supply current

versus supply voltage

–50 0 50 100 150°C

IDD

VDD = 3.8 V

VDD = 12 V

VDD = 24 V

HAL7xx

Fig. 3–4: Typical supply current

versus ambient temperature

140

150

160

170

180

190

–50 0 50 100 150 200°C

kHz

fosc

VDD = 3.8 V

VDD = 4.5 V...24 V

HAL7xx

Fig. 3–5: Typ. internal chopper frequency

versus ambient temperature

HAL710, HAL730 DATA SHEET

12 Sept. 15, 2004; 6251-478-2DS Micronas

120

140

160

180

200

220

240

0 5 10 15 20 25 30 V

kHz

VDD

fosc

TA = –40 °C

TA = 25 °C

TA = 140 °C

HAL7xx

Fig. 3–6: Typ. internal chopper frequency

versus supply voltage

120

140

160

180

200

220

240

3 3.5 4.0 4.5 5.0 5.5 6.0 V

kHz

VDD

fosc

TA= –40 °C

TA=25 °C

TA=140 °C

HAL7xx

Fig. 3–7: Typ. internal chopper frequency

versus supply voltage

100

150

200

250

300

350

400

0 5 10 15 20 25 30 V

VDD

VOL

TA = –40 °C

TA = 25 °C

TA = 140 °C

IO = 10 mA

TA = 100 °C

HAL7xx

Fig. 3–8: Typical output low voltage

versus supply voltage

100

200

300

400

3 3.5 4.0 4.5 5.0 5.5 6.0 V

VDD

VOL

TA= –40 °C

TA=25 °C

TA=140 °C

IO = 10 mA

TA=100 °C

HAL7xx

Fig. 3–9: Typical output low voltage

versus supply voltage

DATA SHEET HAL710, HAL730

Micronas Sept. 15, 2004; 6251-478-2DS 13

100

150

200

250

300

–50 0 50 100 150°C

VOL

VDD = 24 V

VDD = 3.8 V

VDD = 4.5 V

HAL7xx

IO = 10 mA

Fig. 3–10: Typ. output low voltage

versus ambient temperature

15 20 25 30 35 V

µA

VOH

IOH

TA=140 °C

TA=100 °C

TA=25 °C

10–6

10–5

10–4

10–3

10–2

10–1

100

101

102HAL7xx

Fig. 3–11: Typical output leakage current

versus output voltage

–50 0 50 100 150 200°C

µA

IOH

VOH = 24 V

10–5

10–4

10–3

10–2

10–1

100

101

102HAL7xx

VOH = 3.8 V

Fig. 3–12: Typical output leakage current

versus ambient temperature

HAL710, HAL730 DATA SHEET

14 Sept. 15, 2004; 6251-478-2DS Micronas

4. Type Description

4.1. HAL710, HAL730

The types differ according to the behavior of the Direc-

tion Output (see Section 1.2. on page 3).

Magnetic Features

– typical BON: 14.9 mT at room temperature

– typical BOFF: −14.9 mT at room temperature

– temperature coefficient of −2000 ppm/K in all mag-

netic characteristics

– operation with static magnetic fields and dynamic

magnetic fields up to 10 kHz

Fig. 4–1: Definition of magnetic switching points for

the HAL710

Positive flux density values refer to magnetic south

pole at the branded side of the package.

Applications

The HAL710 and the HAL730 are the optimal sensors

for position-control applications with direction detection

and alternating magnetic signals such as:

– multipole magnet applications,

– rotating speed and direction measurement,

position tracking (active targets), and

– window lifters.

Magnetic Thresholds

(quasistationary: dB/dt<0.5 mT/ms)

at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24 V,

as not otherwise specified

Typical characteristics for TJ = 25 °C and VDD = 5 V

Matching BS1 and BS2

(quasistationary: dB/dt<0.5 mT/ms)

at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24 V,

as not otherwise specified

Typical characteristics for TJ = 25 °C and VDD = 5 V

Hysteresis Matching

(quasistationary: dB/dt<0.5 mT/ms)

at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24 V,

as not otherwise specified

Typical characteristics for TJ = 25 °C and VDD = 5 V

BOFF BON

VOL

utput Voltage

BHYS

Para-

meter On-Point

BS1on, BS2on

Off-Point

BS1off,, BS2off

Unit

TjMin. Typ. Max. Min. Typ. Max.

−40 °C 12.5 16.3 20 −20 −16.3 −12.5 mT

25 °C 10.7 14.9 19.1 −19.1 −14.9 −10.7 mT

100 °C 7.7 12.5 17.3 −17.3 −12.5 −7.7 mT

140 °C 6.0 10.9 16.0 −16.0 −10.9 −6.0 mT

Para-

meter BS1on − BS2on BS1off − BS2off Unit

TjMin. Typ Max. Min. Typ Max.

−40 °C −7.5 0 7.5 −7.5 0 7.5 mT

25 °C −7.5 0 7.5 −7.5 0 7.5 mT

100 °C −7.5 0 7.5 −7.5 0 7.5 mT

140 °C −7.5 0 7.5 −7.5 0 7.5 mT

Parameter (BS1on − BS1off) / (BS2on − BS2off) Unit

TjMin. Typ. Max.

−40 °C 0.85 1.0 1.2 −

25 °C 0.85 1.0 1.2 −

100 °C 0.85 1.0 1.2 −

140 °C 0.85 1.0 1.2 −

DATA SHEET HAL710, HAL730

Micronas Sept. 15, 2004; 6251-478-2DS 15

−20

−15

−10

−5

0 5 10 15 20 25 30 V

VDD

BON

BOFF

TA=−40 °C

TA=25 °C

TA=140 °C

TA=100 °C

HAL710, HAL730

BON

BOFF

Fig. 4–2: Magnetic switching points

versus supply voltage

−20

−15

−10

−5

3 3.5 4.0 4.5 5.0 5.5 6.0 V

VDD

BON

BOFF

HAL710, HAL730

BON

BOFF

TA= −40 °C

TA= 25 °C

TA= 140 °C

TA= 100 °C

Fig. 4–3: Magnetic switching points

versus supply voltage

−25

−20

−15

−10

−5

−50 0 50 100 150°C

TA, TJ

BON

BOFF BONmax

BONtyp

BONmin

BOFFmax

BOFFtyp

BOFFmin

HAL710, HAL730

VDD = 3.8 V

VDD = 4.5 V...24 V

Fig. 4–4: Magnetic switching points

versus ambient temperature

HAL710, HAL730 DATA SHEET

16 Sept. 15, 2004; 6251-478-2DS Micronas

5. Application Notes

5.1. Ambient Temperature

Due to the internal power dissipation, the temperature

on the silicon chip (junction temperature TJ) is higher

than the temperature outside the package (ambient

temperature TA).

TJ = TA + ∆T

At static conditions and continuous operation, the fol-

lowing equation applies:

∆T = IDD * VDD * Rth

For typical values, use the typical parameters. For

worst case calculation, use the max. parameters for

IDD and Rth, and the max. value for VDD from the appli-

cation.

For all sensors, the junction temperature range TJ is

specified. The maximum ambient temperature TAmax

can be calculated as:

TAmax = TJmax − ∆T

5.2. Extended Operating Conditions

All sensors fulfill the electrical and magnetic character-

istics when operated within the Recommended Oper-

ating Conditions (see Section 3.5. on page 10).

Supply Voltage Below 3.8 V

Typically, the sensors operate with supply voltages

above 3 V, however, below 3.8 V some characteristics

may be outside the specification.

Note: The functionality of the sensor below 3.8 V is not

tested. For special test conditions, please con-

tact Micronas.

5.3. Signal Delay

The extra circuitry required for the direction detection

increases the latency of the Count and Direction Sig-

nal compared to a simple switch (e.g. HAL 525). This

extra delay corresponds to 0.5 and 1 clock period for

the Direction Signal and Count Signal respectively.

5.4. Test Mode Activation

In order to obtain the normal operation as described

above, two external pull-up resistors with appropriate

values are required to connect each output to an exter-

nal supply, such that the potential at the open-drain

output rises to at least 3 V in less than 10 µs after hav-

ing turned off the corresponding pull-down transistor or

after having applied VDD.

If the Direction Output is pulled low externally (the

potential does not rise after the internal pull-down tran-

sistor has been turned off), the device enters Manufac-

turer Test Mode.

Direction detection is not functional in Manufacturer

Test Mode. The device returns to normal operation as

soon as the Count Output goes high.

Note: The presence of a Manufacturer Test Mode

requires appropriate measures to prevent acci-

dental activation (e.g. in response to EMC

events).

DATA SHEET HAL710, HAL730

Micronas Sept. 15, 2004; 6251-478-2DS 17

5.5. Start-up Behavior

Due to the active offset compensation, the sensors

have an initialization time (enable time ten(O)) after

applying the supply voltage. The parameter ten(O) is

specified in the “Characteristics” (see Section 3.6. on

page 10).

During the initialization time, the output states are not

defined and the outputs can toggle. After ten(O), both

outputs will be either high or low for a stable magnetic

field (no toggling) and the Count Output will be low if

the applied magnetic field B exceeds BON. The Count

Output will be high if B drops below BOFF

. The Direc-

tion Output will have the correct state after the second

edge (rising or falling) in the same direction.

The device contains a Power-On Reset circuit (POR)

generating a reset when VDD rises. This signal is used

to disable Test Mode. The generation of this reset sig-

nal is guaranteed when VDD at the chip rises to a mini-

mum 3.8 V in less than 4 µs monotonically. If this con-

dition is violated, the internal reset signal might be

missing. Under these circumstances, the chip will still

operate according to the specification, but the risk of

toggling outputs during ten(O) increases; and for mag-

netic fields between BOFF and BON, the output states

of the Hall sensor after applying VDD will be either low

or high. In order to achieve a well-defined output state,

the applied magnetic field then must exceed BONmax,

respectively, drop below BOFFmin.

WARNING:

DO NOT USE THESE SENSORS IN LIFE-

SUPPORTING SYSTEMS, AVIATION, AND

AEROSPACE APPLICATIONS.

All information and data contained in this data sheet are without any

commitment, are not to be considered as an offer for conclusion of a

contract, nor shall they be construed as to create any liability. Any new

issue of this data sheet invalidates previous issues. Product availability

and delivery are exclusively subject to our respective order confirmation

form; the same applies to orders based on development samples deliv-

ered. By this publication, Micronas GmbH does not assume responsibil-

ity for patent infringements or other rights of third parties which may

result from its use.

Further, Micronas GmbH reserves the right to revise this publication and

to make changes to its content, at any time, without obligation to notify

any person or entity of such revisions or changes.

No part of this publication may be reproduced, photocopied, stored on a

retrieval system, or transmitted without the express written consent of

Micronas GmbH.

HAL710, HAL730 DATA SHEET

18 Sept. 15, 2004; 6251-478-2DS Micronas

Micronas GmbH

Hans-Bunte-Strasse 19

D-79108 Freiburg (Germany)

P.O. Box 840

D-79008 Freiburg (Germany)

Tel. +49-761-517-0

Fax +49-761-517-2174

E-mail: docservice@micronas.com

Internet: www.micronas.com

Printed in Germany

Order No. 6251-478-2DS

6. Data Sheet History

1. Data sheet: “HAL710, HAL730 Hall-Effect Sensors

with Direction Detection”, May 13, 2002,

6251-478-1DS. First release of the data sheet.

2. Data Sheet: “HAL710, HAL730 Hall-Effect Sensors

with Direction Detection”, Sept. 15, 2004,

6251-478-2DS. Second release of the data sheet.

Major changes:

– new package diagram for SOT89B-2