MMBTH10M3T5G - ON Semiconductor

January, 2009 − Rev. 0

1Publication Order Number:

MMBTH10M3/D

MMBTH10M3T5G

NPN VHF/UHF Transistor

The MMBTH10M3T5G device is a spin−off of our popular

SOT−23 three−leaded device. It is designed for general purpose

VHF/UHF applications and is housed in the SOT−723 surface mount

package. This device is ideal for low−power surface mount

applications where board space is at a premium.

Features

•Reduces Board Space

•This is a Halide−Free Device

•This is a Pb−Free Device

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector −Emitter Voltage VCEO 25 Vdc

Collector −Base Voltage VCBO 30 Vdc

Emitter−Base Voltage VEBO 3.0 Vdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation

FR−5 Board (Note 1)

TA = 25°C

Derate above 25°C

PD265

2.1

mW/°C

Thermal Resistance,

Junction−to−Ambient

RqJA 470 °C/W

Total Device Dissipation

Alumina Substrate, (Note 2) TA = 25°C

Derate above 25°C

PD640

5.1

mW/°C

Thermal Resistance,

Junction−to−Ambient

RqJA 195 °C/W

Junction and Storage Temperature TJ, Tstg −55 to

+150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

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Device Package Shipping†

ORDERING INFORMATION

MMBTH10M3T5G SOT−723

(Pb−Free)

8000/Tape & Reel

COLLECTOR

BASE

EMITTER

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

SOT−723

CASE 631AA

STYLE 1

AJ M

AJ = Specific Device Code

M = Date Code

MARKING

DIAGRAM

MMBTH10M3T5G

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO 25 − − Vdc

Collector−Base Breakdown Voltage

(IC = 100 μAdc, IE = 0)

V(BR)CBO 30 − − Vdc

Emitter−Base Breakdown Voltage

(IE = 10 μAdc, IC = 0)

V(BR)EBO 3.0 − − Vdc

Collector Cutoff Current

(VCB = 25 Vdc, IE = 0)

ICBO − − 100 nAdc

Emitter Cutoff Current

(VEB = 2.0 Vdc, IC = 0)

IEBO − − 100 nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 4.0 mAdc, VCE = 10 Vdc)

hFE

60 − −

−

Collector−Emitter Saturation Voltage

(IC = 4.0 mAdc, IB = 0.4 mAdc)

VCE(sat) − − 0.5 Vdc

Base−Emitter On Voltage

(IC = 4.0 mAdc, VCE = 10 Vdc)

VBE − − 0.95 Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz)

650 − −

MHz

Collector−Base Capacitance

(VCB= 10 Vdc, IE = 0, f = 1.0 MHz)

Ccb − − 0.7 pF

Common−Base Feedback Capacitance

(VCB= 10 Vdc, IE = 0, f = 1.0 MHz)

Crb − − 0.65 pF

Collector Base Time Constant

(IC= 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz)

rb′Cc− − 9.0 ps

MMBTH10M3T5G

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TYPICAL CHARACTERISTICS

600

f, FREQUENCY (MHz)

Figure 1. Rectangular Form

gib (mmhos)

Figure 2. Polar Form

f, FREQUENCY (MHz)

Figure 3. Rectangular Form

gfb (mmhos)

Figure 4. Polar Form

70 60 50 10 0 -10

0204060

80100

10 30 50 70

-10

200 300 400 500 700 1000

-20

-30

-40

-50

-60

40 30 20 -20 -30

100 200 300 400 500 700 1000

-10

-20

-30

bfb

-gfb

100

200 400

700

1000 MHz

100

200

400

700

gib

-bib

jb (mmhos)

, FORWARD TRANSFER ADMITTANCE (mmhos) , INPUT ADMITTANCE (mmhos)

yfb, FORWARD TRANSFER ADMITTANCE

COMMON−BASE y PARAMETERS versus FREQUENCY

(VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25°C)

yib, INPUT ADMITTANCE

ib yy

MMBTH10M3T5G

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TYPICAL CHARACTERISTICS

f, FREQUENCY (MHz)

Figure 5. Rectangular Form

grb (mmhos)

Figure 6. Polar Form

f, FREQUENCY (MHz)

Figure 7. Rectangular Form

gob (mmhos)

Figure 8. Polar Form

0 2.0 4.0 6.0 8.0 10

-2.0 -1.2 -0.4 0.4

-5.0

1.2 2.0

4.0

2.0

-1.8 -0.8 0 0.8 1.6

8.0

6.0

-4.0

-3.0

-2.0

-1.0

100

4.0

3.0

1.0

0200 300 400 500 700 1000

5.0

100 200 300 400 500 700 1000

3.0

2.0

1.0

4.0

7.0

6.0

5.0

9.0

8.0

2.0

bob

gob

-brb

-grb

MPS H11

MPS H10

100

200

400

700

1000 MHz

100

200

400

700

1000 MHz

jb (mmhos)

, OUTPUT ADMITTANCE (mmhos)

ob , REVERSE TRANSFER ADMITTANCE (mmhos)

yob, OUTPUT ADMITTANCE

COMMON−BASE y PARAMETERS versus FREQUENCY

(VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25°C)

yrb, REVERSE TRANSFER ADMITTANCE

MMBTH10M3T5G

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PACKAGE DIMENSIONS

STYLE 1:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

SOT−723

CASE 631AA−01

ISSUE C

DIM MIN NOM MAX

MILLIMETERS

A0.45 0.50 0.55

b0.15 0.21 0.27

b1 0.25 0.31 0.37

C0.07 0.12 0.17

D1.15 1.20 1.25

E0.75 0.80 0.85

e0.40 BSC

H1.15 1.20 1.25

L0.15 0.20 0.25

0.018 0.020 0.022

0.0059 0.0083 0.0106

0.010 0.012 0.015

0.0028 0.0047 0.0067

0.045 0.047 0.049

0.03 0.032 0.034

0.016 BSC

0.045 0.047 0.049

0.0059 0.0079 0.0098

MIN NOM MAX

INCHES

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD

FLASH, PROTRUSIONS OR GATE BURRS.

−Y−

−X−

X0.08 (0.0032) Y

1.0

0.039

ǒmm

inchesǓ

SCALE 20:1

0.40

0.0157

0.40

0.0157

0.40

0.0157

0.40

0.0157

0.40

0.0157

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

MMBTH10M3/D

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Phone: 421 33 790 2910

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Phone: 81−3−5773−3850

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