MRF6S27015NR1 MRF6S27015GNR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2000 to
2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
•Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ =
160 mA, Pout = 3 Watts Avg., f = 2600 MHz, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 14 dB
Drain Efficiency — 22%
ACPR @ 5 MHz Offset — -45 dBc in 3.84 MHz Channel Bandwidth
•Capable of Handling 5:1 VSWR, @ 28 Vdc, 2600 MHz, 15 Watts CW
Output Power
Features
•Characterized with Series Equivalent Large-Signal Impedance Parameters
•Internally Matched for Ease of Use
•Qualified Up to a Maximum of 32 VDD Operation
•Integrated ESD Protection
•225°C Capable Plastic Package
•RoHS Compliant
•In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage VDSS -0.5, +68 Vdc
Gate-Source Voltage VGS -0.5, +12 Vdc
Storage Temperature Range Tstg -65 to +150 °C
Case Operating Temperature TC150 °C
Operating Junction Temperature (1,2) TJ225 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 7.5 W Avg., Two - Tone
Case Temperature 79°C, 3 W CW
RθJC
2.0
2.2
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF6S27015N
Rev. 2, 12/2008
Freescale Semiconductor
Technical Data
2300-2700 MHz, 3 W AVG., 28 V
SINGLE W- CDMA
LATERAL N -CHANNEL
RF POWER MOSFETs
MRF6S27015NR1
MRF6S27015GNR1
CASE 1265-09, STYLE 1
TO-270-2
PLASTIC
MRF6S27015NR1
CASE 1265A-03, STYLE 1
TO-270-2 GULL
PLASTIC
MRF6S27015GNR1
Freescale Semiconductor, Inc., 2006 -2008. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF6S27015NR1 MRF6S27015GNR1
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22-A114) 1A (Minimum)
Machine Model (per EIA/JESD22-A115) A (Minimum)
Charge Device Model (per JESD22-C101) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD 22-A113, IPC/JEDEC J- STD -020 3 260 °C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS — — 10 µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS — — 1 µAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS — — 500 nAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 40 µAdc)
VGS(th) 1.5 2.2 3.5 Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 160 mAdc)
VGS(Q) — 2.8 — Vdc
Fixture Gate Quiescent Voltage (1)
(VDD = 28 Vdc, ID = 160 mAdc, Measured in Functional Test)
VGG(Q) 2.2 3.1 4.4 Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 0.4 Adc)
VDS(on) — 0.27 0.4 Vdc
Dynamic Characteristics (2)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 11.6 — pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss — 22.9 — pF
Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 160 mA, Pout = 3 W Avg., f = 2600 MHz, Single-Carrier
W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. PAR = 8.5 dB @
0.01% Probability on CCDF.
Power Gain Gps 12.5 14 16 dB
Drain Efficiency ηD19 22 — %
Adjacent Channel Power Ratio ACPR — -45 -42 dBc
Input Return Loss IRL — -18 -9 dB
1. VGG = 11/10 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally input matched.
3. Measurement made with device in straight lead configuration before any lead forming operation is applied.
MRF6S27015NR1 MRF6S27015GNR1
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF6S27015NR1(GNR1) Test Circuit Schematic
Z11 0.143″ x 0.816″ Microstrip
Z12 0.101″ x 0.667″ Microstrip
Z13 0.073″ x 0.485″ Microstrip
Z14 0.120″ x 0.021″ Microstrip
Z15 0.407″ x 0.170″ Microstrip
Z16 0.714″ x 0.066″ Microstrip
Z17 0.496″ x 0.066″ Microstrip
Z18 0.475″ x 0.050″ Microstrip
Z19 0.480″ x 0.050″ Microstrip
PCB Taconic RF - 35, 0.030″, εr = 3.5
Z1 0.503″ x 0.066″ Microstrip
Z2 0.905″ x 0.066″ Microstrip
Z3 0.371″ x 0.300″ x 0.049″ Taper
Z4 0.041″ x 0.016″ Microstrip
Z5 0.245″ x 0.851″ Microstrip
Z6 0.248″ x 0.851″ Microstrip
Z7 0.973″ x 0.050″ Microstrip
Z8 0.085″ x 0.485″ Microstrip
Z9 0.091″ x 0.667″ Microstrip
Z10 0.138″ x 0.816″ Microstrip
VBIAS VSUPPLY
RF
OUTPUT
RF
INPUT
DUT
Z1 Z2 Z3
C3
Z4 Z5 Z6
R2 C4
Z8 Z11 Z12 Z14 Z15
C11
+
Z13 Z16
C6
Z17
Z7
C2C1
Z18
C7 C8
R3 Z9 Z10
Z19
C5 C9 C10
VSUPPLY
R1
Table 6. MRF6S27015NR1(GNR1) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1 100 nF Chip Capacitor CDR33BX104AKYS Kemet
C2 4.7 pF Chip Capacitor ATC100B4R7BT500XT ATC
C3 9.1 pF Chip Capacitor ATC100B9R1BT500XT ATC
C4, C5, C6 8.2 pF Chip Capacitors ATC100B8R2BT500XT ATC
C7, C8, C9, C10 10 µF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata
C11 10 µF, 35 V Tantalum Chip Capacitor T491D106K035AT Kemet
R1 1 KΩ, 1/4 W Chip Resistor CRCW12061001FKEA Vishay
R2 10 KΩ,1/4 W Chip Resistor CRCW12061002FKEA Vishay
R3 10 Ω, 1/4 W Chip Resistor CRCW120610R0FKEA Vishay
4
RF Device Data
Freescale Semiconductor
MRF6S27015NR1 MRF6S27015GNR1
Figure 2. MRF6S27015NR1(GNR1) Test Circuit Component Layout
MRF6S27015N Rev. 3
C11 R1
R2 C1 C2
R3
C3
C4
C7 C8
C6
C5
C10C9
CUT OUT AREA
MRF6S27015NR1 MRF6S27015GNR1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Gps, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc), ALT1 (dBc)
−25
−5
−10
−15
−20
27002500
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 3. Single-Carrier W-CDMA Broadband Performance
@ Pout = 3 Watts Avg.
VDD = 28 Vdc, Pout = 3 W (Avg.)
IDQ = 160 mA, Single−Carrier W−CDMA
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
2640262026002580256025402520
8
16
15
14
13
12
11
10
9
−60
24
23
22
21
20
−30
−40
−50
ηD, DRAIN
EFFICIENCY (%)
ηD
26802660
ALT1
Gps, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc), ALT1 (dBc)
−25
−5
−10
−15
−20
27002500
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 4. Single-Carrier W-CDMA Broadband Performance
@ Pout = 6 Watts Avg.
VDD = 28 Vdc, Pout = 6 W (Avg.)
IDQ = 160 mA, Single−Carrier W−CDMA
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
2640262026002580256025402520
7
15
14
13
12
11
10
9
8
−60
32
31
30
29
28
−30
−40
−50
ηD, DRAIN
EFFICIENCY (%)
ηD
26802660
ALT1
Figure 5. Two-Tone Power Gain versus
Output Power
12
16
1
IDQ = 240 mA
Pout, OUTPUT POWER (WATTS) PEP
VDD = 28 Vdc
f1 = 2592 MHz, f2 = 2605 MHz
Two−Tone Measurements
80 mA
14
13
10
Gps, POWER GAIN (dB)
Figure 6. Third Order Intermodulation Distortion
versus Output Power
−45
−10
1
IDQ = 80 mA
Pout, OUTPUT POWER (WATTS) PEP
10
−15
−20
−30
−35
−40
−60
−50
INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
190 mA
160 mA
130 mA
15
190 mA
130 mA
240 mA
VDD = 28 Vdc
f1 = 2595 MHz, f2 = 2605 MHz
Two−Tone Measurements
−25
−55 160 mA
6
RF Device Data
Freescale Semiconductor
MRF6S27015NR1 MRF6S27015GNR1
TYPICAL CHARACTERISTICS
10
−60
1
VDD = 28 Vdc, Pout = 15 W (PEP)
IDQ = 160 mA IM3−U
−40
−45
−50
100
IMD, INTERMODULATION DISTORTION (dBc)
Figure 7. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
IMD, INTERMODULATION DISTORTION (dBc)
−65
−15
1
−40
−50
10
−30
−20
−60
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
TWO−TONE SPACING (MHz)
Figure 9. Pulsed CW Output Power versus
Input Power
Pin, INPUT POWER (dBm)
36
50
27
VDD = 28 Vdc, IDQ = 160 mA
Pulsed CW, 12 µsec(on), 1% Duty Cycle
f = 2600 MHz
48
46
44
42
40
28 3029 3231 3533
Actual
Ideal
49
47
43
45
41
3426
Pout, OUTPUT POWER (dBm)
P6dB = 44.3 dBm (27 W)
ACPR (dBc), ALT1 (dBc)
Figure 10. Single-Carrier W-CDMA ACPR, ALT1, Power
Gain and Drain Efficiency versus Output Power
5 −65
Pout, OUTPUT POWER (WATTS) AVG.
50 −20
25
−25
20
−35
15
−40
−50
10
−45
10
Gps
ηD
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dBc)
7th Order
VDD = 28 Vdc, IDQ = 160 mA
f1 = 2595 MHz, f2 = 2605 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
5th Order
3rd Order
−30
−35
−25
IM3−L
IM5−U
IM5−L
IM7−L
IM7−U
P3dB = 43.7 dBm (23 W)
P1dB = 43 dBm (20 W)
35
30
45
40
1
−30
−55
−60
ACPR
ALT1
−55
−45
−35
−25
−55
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2600 MHz
VDD = 28 Vdc, IDQ = 160 mA, f = 2600 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
MRF6S27015NR1 MRF6S27015GNR1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
10
18
1
0
64
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
VDD = 28 Vdc
IDQ = 160 mA
f = 2600 MHz
TC = −30_C
25_C
85_C
−30_C
25_C
85_C
10
17
16
15
14
13
12
48
40
32
24
16
8
ηD, DRAIN EFFICIENCY (%)
ηD
Gps
Gps, POWER GAIN (dB)
11
56
Figure 12. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
Gps, POWER GAIN (dB)
30
10
15
515
11
20
13
VDD = 24 V 28 V 32 V
IDQ = 160 mA
f = 2600 MHz
2510
EVM, ERROR VECTOR MAGNITUDE (%)
Figure 13. Drain Efficiency and Error Vector
Magnitude versus Output Power
00.5
Pout, OUTPUT POWER (dBm)
25 3
15
10
2.5
5
2
21 35 36
1.5
VDD = 28 Vdc, IDQ = 160 mA
WiMAX, 802.16, 64 QAM 3/4, 4 Bursts
7 MHz Channel Bandwidth, f = 2600 MHz
ηD
ηD, DRAIN EFFICIENCY (%)
20
1
EVM
22 23 25 26 27 28
14
12
24 343329 30 3231 250
109
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 14. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 3 W Avg., and ηD = 22%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
108
107
106
110 130 150 170 190
MTTF (HOURS)
210 230
8
RF Device Data
Freescale Semiconductor
MRF6S27015NR1 MRF6S27015GNR1
W- CDMA TEST SIGNAL
−60
−110
−10
(dB)
−20
−30
−40
−50
−70
−80
−90
−100
3.84 MHz
Channel BW
7.21.8 5.43.60−1.8−3.6−5.4−9 9
f, FREQUENCY (MHz)
Figure 15. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single-Carrier Test Signal
−7.2
−ACPR in 3.84 MHz
Integrated BW
−ACPR in 3.84 MHz
Integrated BW
10
0.0001
100
0
PEAK−TO−AVERAGE (dB)
10
1
0.1
0.01
0.001
24 68
PROBABILITY (%)
W−CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. PAR = 8.5 dB @
0.01% Probability on CCDF
Figure 16. Single-Carrier W-CDMA Spectrum
MRF6S27015NR1 MRF6S27015GNR1
9
RF Device Data
Freescale Semiconductor
Zo = 5 Ω
Zload
f = 2500 MHz
Zsource
f = 2700 MHz
f = 2500 MHz
f = 2700 MHz
VDD = 28 Vdc, IDQ = 160 mA, Pout = 3 W Avg.
f
MHz
Zsource
W
Zload
W
2500 4.059 - j2.284 3.380 - j0.543
2525 3.679 - j2.593 3.265 - j0.546
2550 3.006 - j2.574 3.077 - j0.449
2575 2.355 - j2.190 2.892 - j0.336
2600 2.075 - j1.657 2.727 - j0.182
2625 1.930 - j1.179 2.564 - j0.034
2650 1.973 - j0.771 2.435 + j0.140
2675 2.017 - j0.557 2.286 + j0.340
2700 2.024 - j0.379 2.227 + j0.538
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Figure 17. Series Equivalent Source and Load Impedance
10
RF Device Data
Freescale Semiconductor
MRF6S27015NR1 MRF6S27015GNR1
Table 7. Common Source Scattering Parameters (VDD = 28 V, IDQ = 160 mA, TC = 25°C, 50 ohm system)
f
MH
S11 S21 S12 S22
MHz |S11|∠φ |S21|∠φ |S12|∠φ |S22|∠φ
500 0.984 -178.2 1.453 39.2 0.001 -109.8 0.870 -122.3
550 0.984 -179.0 1.180 36.5 0.000 -121.0 0.888 -127.6
600 0.986 180.0 0.958 34.4 0.000 159.6 0.901 -132.0
650 0.987 179.0 0.776 33.0 0.001 118.4 0.911 - 135.8
700 0.987 178.1 0.627 32.3 0.001 106.5 0.921 -139.1
750 0.986 177.3 0.502 32.5 0.001 104.2 0.931 -142.1
800 0.985 176.5 0.397 34.1 0.002 96.0 0.940 -144.8
850 0.985 175.8 0.308 37.7 0.002 95.6 0.944 -147.3
900 0.984 175.1 0.235 44.5 0.003 94.0 0.951 -149.5
950 0.983 174.5 0.180 56.5 0.003 91.2 0.956 -151.5
1000 0.982 173.8 0.146 75.6 0.003 91.2 0.962 -153.4
1050 0.981 173.2 0.142 98.9 0.004 89.9 0.965 -155.2
1100 0.980 172.5 0.163 118.0 0.004 89.2 0.969 -156.8
1150 0.978 171.9 0.199 129.9 0.005 88.9 0.973 -158.3
1200 0.976 171.2 0.243 136.6 0.005 87.4 0.976 -159.8
1250 0.974 170.5 0.291 140.2 0.006 86.5 0.980 -161.1
1300 0.970 169.8 0.342 141.8 0.006 86.3 0.983 -162.4
1350 0.966 169.0 0.395 142.1 0.006 84.6 0.986 -163.7
1400 0.960 168.3 0.452 141.5 0.006 84.8 0.988 -164.9
1450 0.953 167.5 0.514 140.2 0.007 86.9 0.990 -166.1
1500 0.945 166.6 0.580 138.4 0.007 92.5 0.993 -167.3
1550 0.933 165.8 0.655 135.9 0.009 100.3 0.992 - 168.4
1600 0.918 164.9 0.738 132.5 0.011 93.7 0.994 -169.4
1650 0.901 164.1 0.828 128.4 0.013 83.6 0.996 -170.4
1700 0.879 163.2 0.925 123.5 0.014 75.4 0.997 -171.6
1750 0.850 162.5 1.030 117.6 0.014 69.1 0.998 -172.8
1800 0.815 162.2 1.139 110.8 0.015 62.8 0.995 -173.9
1850 0.775 162.5 1.246 102.7 0.016 55.8 0.991 -175.0
1900 0.734 164.0 1.337 93.6 0.016 48.2 0.984 -176.0
1950 0.700 167.0 1.399 83.5 0.015 40.3 0.976 -176.9
2000 0.683 171.0 1.420 73.1 0.015 33.2 0.966 -177.6
2050 0.687 175.1 1.396 62.9 0.014 26.5 0.957 -178.0
2100 0.710 178.5 1.338 53.4 0.012 22.1 0.951 -178.3
2150 0.741 -179.3 1.259 45.0 0.011 19.8 0.948 -178.6
2200 0.774 -178.2 1.169 37.6 0.010 19.7 0.947 -178.9
2250 0.805 -177.8 1.079 31.1 0.009 19.7 0.947 -179.2
2300 0.832 -177.9 0.993 25.8 0.008 19.6 0.948 -179.5
2350 0.855 -178.2 0.917 21.2 0.007 22.6 0.950 -179.9
(continued)
MRF6S27015NR1 MRF6S27015GNR1
11
RF Device Data
Freescale Semiconductor
Table 7. Common Source Scattering Parameters (VDD = 28 V, IDQ = 160 mA, TC = 25°C, 50 ohm system) (continued)
f
MH
S11 S21 S12 S22
MHz |S11|∠φ |S21|∠φ |S12|∠φ |S22|∠φ
2400 0.873 -178.8 0.848 17.2 0.006 31.2 0.953 179.7
2450 0.887 -179.4 0.786 13.7 0.006 42.2 0.955 179.2
2500 0.897 -179.9 0.731 10.6 0.007 45.6 0.956 178.7
2550 0.907 179.6 0.682 7.9 0.007 46.5 0.957 178.2
2600 0.914 179.1 0.639 5.5 0.007 48.0 0.958 177.8
2650 0.919 178.8 0.600 3.3 0.007 47.0 0.960 177.2
2700 0.926 178.3 0.566 1.3 0.007 45.8 0.962 176.8
2750 0.931 177.9 0.534 -0.6 0.006 52.1 0.964 176.2
2800 0.936 177.4 0.505 -2.2 0.006 62.3 0.965 175.7
2850 0.940 177.0 0.480 -3.8 0.006 69.8 0.966 175.2
2900 0.942 176.6 0.457 -5.2 0.007 73.2 0.967 174.7
2950 0.945 176.3 0.436 -6.5 0.007 78.7 0.968 174.2
3000 0.947 175.8 0.416 -7.6 0.008 85.1 0.969 173.8
3050 0.949 175.6 0.399 -8.7 0.009 87.9 0.969 173.2
3100 0.950 175.1 0.382 -9.6 0.011 88.2 0.970 172.9
3150 0.953 174.8 0.368 -10.5 0.012 86.9 0.972 172.6
3200 0.955 174.5 0.355 -11.5 0.014 85.1 0.974 172.1
12
RF Device Data
Freescale Semiconductor
MRF6S27015NR1 MRF6S27015GNR1
PACKAGE DIMENSIONS
MRF6S27015NR1 MRF6S27015GNR1
13
RF Device Data
Freescale Semiconductor
14
RF Device Data
Freescale Semiconductor
MRF6S27015NR1 MRF6S27015GNR1
MRF6S27015NR1 MRF6S27015GNR1
15
RF Device Data
Freescale Semiconductor
16
RF Device Data
Freescale Semiconductor
MRF6S27015NR1 MRF6S27015GNR1
MRF6S27015NR1 MRF6S27015GNR1
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RF Device Data
Freescale Semiconductor
18
RF Device Data
Freescale Semiconductor
MRF6S27015NR1 MRF6S27015GNR1
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
•AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
•AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
•EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Aug. 2006 •Initial Release of Data Sheet
1June 2007 •Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150_C, p. 1
•Operating Junction Temperature increased from 200_C to 225_C in Maximum Ratings table, related
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200_C to
225_C in Capable Plastic Package bullet, p, 1
•Removed footnote and “Measured in Functional Test” from the RF test condition voltage callout for VGS(Q),
and added Fixture Gate Quiescent Voltage, VGG(Q) to On Characteristics table, p. 2
•VDS(on) Typ and Min values corrected in On Characteristics table, p. 2
•Output Capacitance Typ value corrected in Dynamic Characteristics table, p. 2
•Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part
numbers, p. 3
•Replaced Fig. 14, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 7
•Fig. 15, CCDF W-CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single-Carrier Test Signal,
updated to remove IM3 measurement copy from callout in graph, p. 8
•Updated Fig. 16, Single-Carrier W- CDMA Spectrum, to correctly reflect integrated bandwidth offsets, p. 8
2Dec. 2008 •Changed Typical Performance Full Frequency Band to f = 2600 MHz to match Functional Test specification,
p. 1
•Changed Storage Temperature Range in Max Ratings table from - 65 to +175 to -65 to +150 for
standardization across products, p. 1
•Replaced Case Outline 1265-08 with 1265-09, Issue K, p. 1, 12-14. Corrected cross hatch pattern in
bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed
from Min-Max .290-.320 to .290 Min; E3 changed from Min- Max .150-.180 to .150 Min). Added JEDEC
Standard Package Number.
•Replaced Case Outline 1265A - 02 with 1265A - 03, Issue C, p. 1, 15-17. Corrected cross hatch pattern and
its dimensions (D2 and E2) on source contact (D2 changed from Min-Max .290 - .320 to .290 Min; E3
changed from Min-Max .150 -.180 to .150 Min). Added pin numbers. Corrected mm dimension L for
gull-wing foot from 4.90 - 5.06 Min - Max to 0.46-0.61 Min - Max. Added JEDEC Standard Package Number.
•Added footnote, Measurement made with device in straight lead configuration before any lead forming
operation is applied, to Functional Tests table, p. 2.
•Updated Part Numbers in Table 6, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
MRF6S27015NR1 MRF6S27015GNR1
19
RF Device Data
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Document Number: MRF6S27015N
Rev. 2, 12/2008
