AP1RA03GMT-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D SO-8 Compatible with Heatsink Low On-resistance 30V RDS(ON) 1.59m ID G RoHS Compliant & Halogen-Free BVDSS 185A S D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The PMPAK(R) 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile. D D D S S S G PMPAK(R) 5x6 Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage +20 V ID@TC=25 Continuous Drain Current (Chip), V GS @ 10V ID@TA=25 ID@TA=70 185 A 3 46 A 3 36.7 A 300 A 83.3 W 5 W 28.8 mJ Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation PD@TA=25 Total Power Dissipation 4 EAS Single Pulse Avalanche Energy TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case 3 Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Value Units 1.5 /W 25 /W 1 201103022 AP1RA03GMT-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=20A - - 1.59 m VGS=4.5V, ID=20A - - 3 m V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 VDS=10V, ID=20A - 80 - S gfs Forward Transconductance IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 1 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA ID=30A - 24 38 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=15V - 5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 14 - nC 2 td(on) Turn-on Delay Time VDS=15V - 10 - ns tr Rise Time ID=30A - 100 - ns td(off) Turn-off Delay Time RG=3.3 - 30 - ns tf Fall Time VGS=10V - 95 - ns Ciss Input Capacitance VGS=0V - 2540 4060 pF Coss Output Capacitance VDS=25V - 800 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 230 - pF Rg Gate Resistance f=1.0MHz - 1.6 3.2 Min. Typ. IS=20A, VGS=0V - - 1.3 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=10A, VGS=0V, - 45 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 55 - nC Notes: 1.Pulse width limited by Max. junction temperature 2.Pulse test 2 o 3.Surface mounted on 1 in copper pad of FR4 board, t <10sec, 60 C/W at steady state. o 4.Starting Tj=25 C , VDD=25V , L=0.1mH , RG=25 , IAS=24A. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP1RA03GMT-HF 300 160 10V 7.0V 6.0V 5.0V V G = 4.0 V ID , Drain Current (A) 200 10V 7.0V 6.0V 5.0V V G =4.0V o T C =150 C ID , Drain Current (A) o T C =25 C 100 120 80 40 0 0 0.0 1.0 2.0 3.0 4.0 5.0 0.0 V DS , Drain-to-Source Voltage (V) 2.0 3.0 4.0 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 2.4 I D =20A I D =20A V G =10V T C =25 o C Normalized RDS(ON) 2.2 RDS(ON) (m) 1.0 2 1.8 1.6 1.2 1.6 0.8 1.4 0.4 1.2 2 4 6 8 -50 10 0 50 100 150 o V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 30 o T j =150 C Normalized VGS(th) (V) T j =25 o C IS(A) 20 10 1.2 0.8 0.4 0 0.0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP1RA03GMT-HF 12 f=1.0MHz 3200 I D =30A C iss 2400 V DS =15V V DS =18V V DS =24V 8 C (pF) VGS , Gate to Source Voltage (V) 10 6 1600 4 C oss 800 2 C rss 0 0 0 10 20 30 40 50 1 60 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 1000 Operation in this area limited by RDS(ON) 100us ID (A) 100 1ms 10 10ms 100ms DC T C =25 o C Single Pulse Normalized Thermal Response (Rthjc) Duty factor = 0.5 0.2 0.1 0.1 0.05 PDM t T 0.02 Duty factor = t/T Peak Tj = PDM x R thjc + T c 0.01 Single Pulse 1 0.01 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS ,Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4