IRG4BC15UD-SPbF
IRG4BC15UD-LPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
E
G
n-channel
C
VCES = 600V
VCE(on) typ. = 2.02V
@VGE = 15V, IC = 7.8A
Thermal Resistance
UltraFast CoPack IGBT
Benefits
www.irf.com 1
UltraFast: Optimized for high frequencies from10 to
30 kHz in hard switching
• IGBT Co-packaged with ultra-soft-recovery
antiparallel diode
• Industry standard D2Pak & TO-262 packages
• Lead-Free
Best Value for Appliance and Industrial Applications
• High noise immune "Positive Only" gate drive-
Negative bias gate drive not necessary
• For Low EMI designs- requires little or no snubbing
• Single Package switch for bridge circuit applications
• Compatible with high voltage Gate Driver IC's
• Allows simpler gate drive D2Pak
IRG4BC15UD-S TO-262
IRG4BC15UD-L
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 14
IC @ TC = 100°C Continuous Collector Current 7.8
ICM Pulsed Collector Current 42 A
ILM Clamped Inductive Load Current 42
IF @ TC = 100°C Diode Continuous Forward Current 4.0
IFM Diode Maximum Forward Current 16
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation 49
PD @ TC = 100°C Maximum Power Dissipation 19
TJOperating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Absolute Maximum Ratings
W
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case - IGBT ––– ––– 2.7
RθJC Junction-to-Case - Diode ––– ––– 7.0 °C/W
RθCS Case-to-Sink, flat, greased surface ––– 0.50 –––
RθJA Junction-to-Ambient, typical socket mount ––– ––– 80
RθJA Junction-to-Ambient (PCB Mount, steady state) ––– ––– 40
Wt Weight ––– 2 (0.07) ––– g (oz)
08/27/04
PD - 95781
IRG4BC15UD-S/LPbF
Parameter Min. Typ. Max. Units Conditions
QgTotal Gate Charge (turn-on) –– – 23 35 IC = 7.8A
Qge Gate - Emitter Charge (turn-on) ––– 4.0 6.0 nC VCC = 400V
Qgc Gate - Collector Charge (turn-on) ––– 9.6 14 VGE = 15V
td(on) Turn-On Delay Time ––– 17 ––– TJ = 25°C
trRise Time ––– 20 ––– ns IC = 7.8A, VCC = 480V
td(off) Turn-Off Delay Time ––– 160 240 VGE = 15V, RG = 75Ω
tfFall Time ––– 83 120 Energy losses include "tail" and
Eon Turn-On Switching Loss ––– 0.24 ––– diode reverse recovery.
Eoff Turn-Off Switching Loss ––– 0.26 ––– m J
Ets Total Switching Loss ––– 0.50 0.63
td(on) Turn-On Delay Time ––– 16 ––– TJ = 150°C,
trRise Time ––– 21 ––– ns IC = 7.8A, VCC = 480V
td(off) Turn-Off Delay Time ––– 180 ––– VGE = 15V, RG = 75Ω
tfFall Time ––– 2 20 ––– Energy losses include "tail" and
Ets Total Switching Loss ––– 0.76 ––– m J diode reverse recovery.
LEInternal Emitter Inductance ––– 7.5 ––– nH Measured 5mm from package
Cies Input Capacitance ––– 410 ––– VGE = 0V
Coes Output Capacitance ––– 37 ––– pF VCC = 30V
Cres Reverse Transfer Capacitance ––– 5.3 ––– ƒ = 1.0MHz
trr Diode Reverse Recovery Time ––– 28 42 ns TJ = 25°C
––– 38 57 TJ = 125°C IF = 4.0A
Irr Diode Peak Reverse Recovery Current ––– 2.9 5 .2 A TJ = 25°C
––– 3.7 6.7 TJ = 125°C VR = 200V
Qrr Diode Reverse Recovery Charge ––– 40 60 nC TJ = 25°C
––– 70 110 TJ = 125°C di/dt 200A/µs
di(rec)M/dt Diode Peak Rate of Fall of Recovery ––– 2 80 ––– A/µs TJ = 25°C
During tb––– 240 ––– TJ = 125°C
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage600 ––– ––– V VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJTemperature Coeff. of Breakdown Voltage ––– 0.63 ––– V/°C VGE = 0V, IC = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage ––– 2.02 2.4 IC = 7.8A VGE = 15V
––– 2.56 ––– V IC = 14A
––– 2.21 ––– IC = 7.8A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 – –– 6. 0 VCE = VGE, IC = 250µA
∆VGE(th)/∆TJTemperature Coeff. of Threshold Voltage ––– -10 ––– mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance 4.1 6.2 ––– S VCE = 100V, IC = 7.8A
ICES Zero Gate Voltage Collector Current ––– – –– 250 µA VGE = 0V, VCE = 600V
––– ––– 1400 VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop ––– 1.5 1. 8 V IC = 4.0A
––– 1.4 1.7 IC = 4.0A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IRG4BC15UD-S/LPbF
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics
0.1
1
10
100
0.1 1 10
V , Collector-to -Emitter Voltage (V )
I , Collector-to-Emitter Current (A)
CE
C
V = 15V
20µs PU LSE WIDTH
GE
T = 25 C
J°
T = 150 C
J°
0.1
1
10
100
5.0 10.0 15.0 20.0
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Cu rrent (A )
GE
C
V = 5 0V
5µs PULSE WIDTH
CC
T = 150 C
J°
T = 25 C
J°
0.1 110 100
f , Frequency ( kHz )
0.00
2.00
4.004.00
6.00
8.008.00
10.00
12.0012.00
0.00
4.00
8.00
12.00
Load Current ( A )
Du ty cycle : 50%
Tj = 125°C
Tsink = 90°C Ta = 55°C
Gate drive as specified
Turn-on losses include effects of
reve rse recovery
Power Dissipation = 11W for Heatsink Mount
Power Dissipation = 1.8W for typical
PCB socket Mount
60% o f r a ted
voltag e
Ideal diodes
IRG4BC15UD-S/LPbF
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. D u ty fa c to r D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response ( Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150
0
2
4
6
8
10
12
14
T , C ase T emperature ( C)
Maximum DC Collector Current(A)
C°-60 -40 -20 020 40 60 80 100 120 140
TJ , Junction Tem perature (° C)
1.0
2.0
3.0
4.0
VCE , Collector-to Emitter Voltage (V)
IC = 14A
VGE = 15V
80µs PULSE WIDTH
IC = 7. 8A
IC = 3. 9A
IRG4BC15UD-S/LPbF
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
-60 -40 -20 020 40 60 80 100 120 140 160
TJ, Juncti on Temper ature ( °C)
0.1
1
10
Total Switching Losses (mJ)
RG = 75Ω
VGE = 15V
VCC
= 480V
IC = 14A
IC = 7.8A
IC = 3.9A
0 5 10 15 20 25
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V= 400V
I = 7.8A
CC
C
1 10 100
0
200
400
600
800
V , Collector-to-Emi tter Voltage (V)
C, Capacitanc e (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1M Hz
+ C
+ C
C SHORTED
GE
ies ge gc , ce
res gc
oes ce gc
Cies
Coes
Cres
010 20 30 40 50
RG, Gate Resistance (Ω)
0.42
0.44
0.46
0.48
Total Switching Losses (mJ)
VCC = 480V
VGE = 15V
TJ = 25°C
I C = 7.8A
IRG4BC15UD-S/LPbF
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
0.1
1
10
1
00
0.0 1.0 2.0 3.0 4.0 5.0 6.0
FM
Forward Voltage Drop - V (V)
T = 150°C
T = 125°C
T = 25°C
J
J
J
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
110 100 1000
VDS, Drain-to-Source V oltage (V)
1
10
100
C, Capacitance(pF)
VGE = 20V
TJ = 125°
SAFE OPERATING AREA
2 4 6 8 10 12 14 16
IC, C oll ector C urrent (A)
0.0
0.4
0.8
1.2
1.6
2.0
Total Switching Losses (mJ)
RG = 75Ω
TJ = 150°C
VGE = 15V
VCC = 480V
IRG4BC15UD-S/LPbF
Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt,
Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt
di (rec) M/dt- (A /µs)
Qrr- (nC)
Irr- ( A)
trr- (nC)
2
0
2
5
3
0
3
5
4
0
4
5
5
0
100 1000
f
di /dt - (A/µs)
I = 8.0A
I = 4.0A
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
0
2
4
6
8
1
0
1
2
1
4
100 1000
f
I = 8.0A
I = 4.0A
V = 20 0V
T = 125°C
T = 25°C
R
J
J
di /dt - (A/µs)
F
F
0
40
80
1
20
1
60
2
00
100 1000
f
di /dt - (A/µs)
I = 8.0A
I = 4.0A
V = 200V
T = 1 25°C
T = 25°C
R
J
J
F
F
100
1
000
100 1000
f
di /dt - (A/µs)
A
I = 8.0A
I = 4.0A
V = 20 0V
T = 125°C
T = 25°C
R
J
J
F
F
IRG4BC15UD-S/LPbF
Same t ype
device as
D.U.T.
D.U.T.
430µF
80%
of Vce
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
Ic
Vce
t1 t2
90% Ic
10% Vce
td(off) tf
Ic
5% Ic
t1+5µ
S
Vce ic d
t
90% Vge
+
Vge
∫
Eoff =
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
∫
Vce ie dt
t2
t1
5% Vce
Ic
Ipk
Vcc 10% Ic
Vce
t1 t2
DUT VOLTAGE
AN D CURRENT
GATE VOLTAGE D.U.T.
+Vg
10% +Vg
90% Ic
tr
td(on)
DIODE REVERSE
RECOVERY ENERGY
tx
Eon =
∫
Erec = t4
t3
Vd id dt
t4
t3
DIODE RECOVERY
WAVEFORMS
Ic
Vpk
10% Vcc
Irr
10% Irr Vc
c
trr
∫
Qrr = trr
tx
id d t
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Vd Ic dt
Vce Ic dt
Ic dt
Vce Ic dt
IRG4BC15UD-S/LPbF
GATE SIGNAL
DEVICE UNDER TES
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0 t1 t2
D.U.T.
V *
c
50V
L
1000V
6000µF
100V
Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current
Test Circuit
RL=480V
4 X IC @25°C
0 - 480V
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
IRG4BC15UD-S/LPbF
D2Pak Part Marking Information
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
Note: "P" in assembly line
position indicates "Lead-Free"
F530S
THIS IS A N IRF530S WITH
LOT CODE 8024
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
ASSEMBLY
LOT CODE
INTERNATIONAL
RECTIFIER
LOGO
PART NUMB ER
DAT E CODE
YEAR 0 = 2000
WEEK 02
LINE L
OR
F530S
A = AS SE MBLY S IT E CODE
WEE K 02
P = DE S IGNAT ES L E AD-F R E E
PRODUCT (OPTIONAL)
RECTIFIER
INTERNATIONAL
LOGO
LOT CODE
AS S EMB LY YEAR 0 = 2000
DATE CODE
PART NUMBE R
IRG4BC15UD-S/LPbF
TO-262 Part Marking Information
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
ASSEMBLY
LOT CODE
RECTIFIER
INTERNATIONAL
A SSEMBLED ON WW 19, 1997
Note: " P" in assembly line
positi on indi cates "L ead-Free"
IN THE ASSEMBLY LINE "C" LOGO
THIS IS AN IRL3103L
LOT CODE 1789
EXAMPLE:
LINE C
DAT E C ODE
WEEK 19
YEA R 7 = 1997
PART NUMBER
PART NUMBER
LOGO
LOT CODE
ASSEMBLY
INTERNATIONAL
RECTIFIER
PRODUCT (OPTIONAL)
P = D ESIGN ATES LEAD-FREE
A = ASSEMBL Y SI T E CODE
WEEK 19
YEAR 7 = 1997
DATE CODE
OR
IRG4BC15UD-S/LPbF
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/04
Notes:
Repetitive rating: VGE=20V; pulse width limited
by maximum junction temperature.
VCC=80%(VCES), VGE=20V, L=10µH, RG = 75Ω
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
This only applies to TO-262 package.
This applies to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
3
4
4
TRR
F
EED DIRECTION
1.85 (. 073)
1.65 (. 065)
1.60 (. 063)
1.50 (. 059)
4.10 (. 161)
3.90 (. 153)
TRL
F
EED DIRECTION
10.90 (.429)
10.70 (.421) 16.10 (.634 )
15.90 (.626 )
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957
)
23.90 (.941
)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX .
27.40 (1.079)
23.90 (.941)
60.00 (2.362
)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA -418.
2. CONTROLLING DIMENS ION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/