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FEATURES
DEVICE INFORMATION
DESCRIPTION
TRF1122
(TOP VIEW)
P0042-01
IADJ
VDD2
GND
UCATTN
GND
RFO
LOADJ1
VNEG
1
2
3
4
5
6
7
8
MXRADJ
UCEN
MXRO
GND
IFIN
IFIP
VDDIFP
VDDIFN
24
23
22
21
20
19
18
17
GND
VDD1
GND
GND
GND
RFI
VDDIF
IFADJ
3132 30 29 28 27 26 25
GND
LOADJ2
GND
LOP
LON
VDDLO
GND
GND
109 11 12 13 14 15 16
B0084-02
RFO
Mixer
Power
Supply
RF Amplifier
UCATTN VDDUCEN –VNEG
LOBuffer
VGA
LOP
LON
BALUN
RFI MXRO
IFIP
IFIN
BPF
TRF1122
SLWS173B – APRIL 2005 – REVISED SEPTEMBER 2006
2.5-GHz Integrated Up-Converter
•Performs Up-Conversion in 2.5-GHz RadiosMDS/MMDS/WCS
•Integrated IF Amplifier, Mixer and LO BufferAmplifier
•Provision for External Image Reject /Band-Pass Filter•TTL Switched Attenuator For Gain Control•TTL Controlled Amplifier Power Down•RF Frequency Range: 2100 - 2700 MHz•20 dB of Gain with 16-dB Switched Attenuator•Output P-1 dB: +14 dBm, Typical•Output IP3: +24 dBm, Typical•LO Drive Level = 0 dBm, Typical
The TRF1122 up-converts a UHF IF signal to an RFsignal in the 2100-MHz to 2700-MHz range for2.5-GHz radio applications. The TRF1122 has 20 dBof gain and an output P-1 dB of +14 dBm, typical. ATTL compatible, 1-bit 16-dB switched attenuator isprovided for gain control and the IF and RF
Figure 1. TRF1122 Pin Outamplifiers can be shut off via a TTL control signal forpower critical or TDD applications. In order to providesystem requirements for LO/spurious rejection, theTRF1122 offers a signal path to an off-chipband-pass filter. Specifications are providedassuming an in-band 2-dB insertion loss filter.
The TRF1122 is designed to complete the secondup-conversion in Texas Instruments complete2.5-GHz chip set. The linear nature of theup-converter makes it ideal for complex modulationsschemes such as high order QAM or OFDM.
Figure 2. Functional Block Diagram
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of TexasInstruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Copyright © 2005–2006, Texas Instruments IncorporatedProducts conform to specifications per the terms of the TexasInstruments standard warranty. Production processing does notnecessarily include testing of all parameters.
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ABSOLUTE MAXIMUM RATINGS
DC SPECIFICATIONS
TRF1122
SLWS173B – APRIL 2005 – REVISED SEPTEMBER 2006
VALUE UNIT
VDD Positive DC Supply Voltage, VDD 0.0 to +5.50 V–VDD Negative DC Supply Voltage, –VDD –5.5 to 0 VPin RF Input Power 10 dBmT
J
Junction Temperature 200 °CPd Power Dissipation 1 WDigital Input Pins –0.3 to 5.5 Vθ
JC
Thermal Resistance Junction to Case
(1)
9.01 °C/WT
stg
Storage Temperature –40 to 105 °CT
op
Operating Temperature –40 to 85 °CLead Temperature 260 °C
(1) Thermal resistance is junction to ambient assuming thermal pad with 16 thermal vias under package metal base. See RecommendedPCB layout.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VDD Positive Supply Voltage 4.75 5 5.25 VIDD Positive Supply Current (Total) 170 185 mAVNEG Negative Supply Voltage –5.25 –5 –4.75 VINEG Negative Supply Current -6 3 6 mAI
VDD2
Supply Current RF 2, pin 2 48 mAI
LO
Supply Current, LO, pin 14 50 mAI
IF
Supply Current, IF Pins 17, 18, and 26 combined. 44 mAI
VDD1
Supply Current RF1, pin 31 28V
IH
Input High Voltage 2.5 5 VV
IL
Input Low Voltage 0.8 VI
IH
Input High Current 300 µAI
IL
Input Low Current -50 µA
2
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ELECTRICAL CHARACTERISTICS
(1)
TRF1122
SLWS173B – APRIL 2005 – REVISED SEPTEMBER 2006
Unless otherwise stated VDD = 5.0 V, VNEG = –5 V, External Filter loss = 2 dB, T
A
= 25°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
F
IF
IF input frequency 325 MHzF
RF
RF output frequency 2100 2700 MHzG Gain UCATTN = TTL High, Input IF 20 dBImpedance is 100 ΩdifferentialSwitched attenuator range Valid at 2.5 GHz 15 16 17 dBG
NB
Gain flatness / 6 MHz 0.2 dBOP-1dB Output power at 1 dB compression, high gain UCATTN = TTL High 14 dBmOIP3 Output third order intercept point, high gain UCATTN = TTL High 24 dBmGain: IF to MXRO UCATTN = TTL High 1 dBGain: RFI to RFO UCATTN = TTL High 19 dBZ
RF
RF output impedance Differential 50 ΩRL
RF
RF output: return loss Z = 50 Ω, P
LO
= 3 dBm, –10 dBF
RF
= 2100-2700 MHzZ
LO
LO input impedance Differential 100 ΩP
LO
LO input power Referenced to 100 Ωdifferential –3 0 3 dBRL
LO
LO input return loss Referenced to 100 Ωdifferential, LO –10 dBinput = 3 dBmZ
IF
IF input impedance Differential 100 ΩRL
IF
IF1 input return loss Referenced to 100 Ωdifferential –10 dBLO to RFO: leakage
(1)
LO input = 0 dBm –20 dBm
(1) Performance is sensitive to impedance termination and board layout.
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TRF1122
SLWS173B – APRIL 2005 – REVISED SEPTEMBER 2006
TERMINAL FUNCTIONS
TERMINAL
I/O TYPE DESCRIPTIONNO. NAME
Not connected for normal operation. Amplifier Bias Adjustment. Do not ground this pin or1 IADJ
connect to any other pin.2 VDD2 I Power RF amplifier bias +5 V3, 5, 9, 11,15, 16, 21, GND Ground28–30, 324 UCATTN I Digital Logic high is high gain, Logic low reduces gain by 16 dB. Normally set high.6 RFO O Analog RF output from RF amplifierNot connected for normal operation. LO common gate bias adjustment. Do not ground this7 LOADJ1
pin or connect to any other pin.Negative bias used for enable circuitry -5 V. This pin can be grounded if the user does not8 VNEG I Power use the UCEN pin to turnoff the amplifier. If the VNEG is grounded the UCEN pin should betied high.
Not connected for normal operation. LO amplifier bias adjustment. Do not ground this pin or10 LOADJ2
connect to any other pin.12 LOP I Analog LO input, Positive, Internally ac coupled13 LON I Analog LO input, Negative, Internally ac coupled.14 VDDLO I Power Positive power for LO amplifier, +5 V.17 VDDIFN I Analog VDD supply for IF amplifier, negative, +5 V18 VDDIFP I Analog VDD supply for IF amplifier, positive, +5 V19 IFIP I Analog IF input, positive, dc coupled, Typical dc voltage is 1.2 V.20 IFIN I Analog IF input, negative, dc coupled Typical dc voltage is 1.2 V.22 MXRO O Analog Output of mixer (after balun) 50 Ωimpedance with high impedance DC ground.23 UCEN Digital Set HIGH to enable IF amplifier and RF amplifiers24 MXRADJ I Analog Normally grounded. Provide 0 Ωjumper to ground.Not connected for normal operation. IF amplifier bias adjustment. Do not ground this pin or25 IFADJ I
connect to any other pin.26 VDDIF I Power Positive supply for IF bias circuitry +5 V27 RFI I Analog Input to RF amplifier, 50 Ωimpedance, Internally AC coupled31 VDDI I Power RF amplifier bias +5 VBack GND Back of package has metal base that must be grounded for thermal and RF performance.
4
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RECOMMENDED PCB LAYOUT
M0022-03
Notes:9ViaHoles,Each0.38mm.
SolderMask.NoSolderMaskUnderChip,OnLeadPadsorOnGroundConnections.
DIMENSIONSinmm
DIA 0.38TYP
0.50TYP
0.23TYP
0.60TYP
3.75
3.50
3.50
3.75
0.25TYP
1.00TYP
1.00TYP
PIN1
TRF1122
SLWS173B – APRIL 2005 – REVISED SEPTEMBER 2006
A. Four layer Board, Starting material: two: 10 mil core FR4 with 1 oz copper, both sides, pressed with 8 mil thickprepreg. Via plating ½ oz copper plate, final plate White immersion tin. Final thickness: 0.033” to 0.037” thick.
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APPLICATION SCHEMATIC
S0196-01
LOINN
LOINP
UCATTN
RFOUT
IFINN
IFINP
UCEN
VDD2
LOADJ2
GND
RFO
GND
MXRO
GND
UCEN
VDD1
IFIN
IFIP
VDDIFP
VDDIFN
GND
RFI
VDDIF
IFADJ
MXRADJC
0.01 Fm
100pF
100 Fm
100pF 0.01 Fm
100pF
100pF
0.01 Fm
0.01 Fm
0.01 Fm
0W(2)
33nH(1)
33nH(1)
1000pF
1000pF
100pF
100pF
VDD
–VNEG
VDD
GND
IADJ
Base
GND
UCATTN
LOADJ1
LOP
GND
VNEG
23
22
24
21
20
19
18
17
31 30
32 29 28 27 26 25
LON
VDDLO
GND
GND
GND
3
2
5
6
7
8
1
4
11
10 13 14 15 16
912
GND
BPF
Z=50 W
TRF1122
SLWS173B – APRIL 2005 – REVISED SEPTEMBER 2006
6
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APPLICATION INFORMATION
TRF1122
SLWS173B – APRIL 2005 – REVISED SEPTEMBER 2006
Figure 3. Package Outline: 5 mm x 5 mm LPCC 32-Pin Leadless Package
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PACKAGE OPTION ADDENDUM
www.ti.com 21-Jul-2012
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status (1) Package Type Package
Drawing Pins Package Qty Eco Plan (2) Lead/
Ball Finish MSL Peak Temp (3) Samples
(Requires Login)
TRF1122IRTMR ACTIVE VQFN RTM 32 2500 Green (RoHS
& no Sb/Br) CU SN Level-3-260C-168 HR
TRF1122IRTMRG3 ACTIVE VQFN RTM 32 2500 Green (RoHS
& no Sb/Br) CU SN Level-3-260C-168 HR
TRF1122IRTMT ACTIVE VQFN RTM 32 250 Green (RoHS
& no Sb/Br) CU SN Level-3-260C-168 HR
TRF1122IRTMTG3 ACTIVE VQFN RTM 32 250 Green (RoHS
& no Sb/Br) CU SN Level-3-260C-168 HR
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
TRF1122IRTMR VQFN RTM 32 2500 330.0 12.4 5.3 5.3 1.5 8.0 12.0 Q2
TRF1122IRTMT VQFN RTM 32 250 330.0 12.4 5.3 5.3 1.5 8.0 12.0 Q2
PACKAGE MATERIALS INFORMATION
www.ti.com 20-Jul-2012
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TRF1122IRTMR VQFN RTM 32 2500 338.1 338.1 20.6
TRF1122IRTMT VQFN RTM 32 250 338.1 338.1 20.6
PACKAGE MATERIALS INFORMATION
www.ti.com 20-Jul-2012
Pack Materials-Page 2
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