This is information on a product in full production.
July 2015 DocID17029 Rev 5 1/9
9
T3035H , T3050H
Snubberless™ high temperature 30 A Triacs
Datasheet − production data
Features
•High current Triac
•High immuni ty level
•Low thermal resistance with clip bounding
•RoHS (2002/95/ EC) compliant package
•Very high commut at ion (3Q) at 150 °C
capability
•UL certified (ref. file E81734)
Applications
Thank s to its h igh electrical noise immun ity level
and its strong current robustness, the T3035H,
T3050H series is designed fo r the control of AC
actuat ors in appliances and industrial systems .
Description
Specifically designed to operate at 150 °C, the
new 30 A T3035H, T3050H T ri acs provide very
high dynamic performance and enhanced
perform ance in terms of power loss and thermal
dissipation. This allows optimizing the heatsink
size, leadin g to space and cost effectiveness
when compared to electro-me chanical solutions.
Based on S T Snubberless™ technology, the y
offer a specified minimal commutat ion and high
noise immunity levels valid up to the T j max.
The T3035 H, T3050H se ries optimize safely the
control of universal motors and of inductive loads
found in power tools and major appliances.
By using an internal ceramic pad, the T3035H-6I,
T3050H-6I provides voltage insulation (rated at
2500 V rms).
TM: Snubberless is a trademark of STMicroelectronics
*
$
$
72$%
$
$
$
*
*
$
$
72$%
,QVXODWHG
Table 1. Device summary
Order
code Package VDRM/VRRM IGT IT(RMS)
T3035H-6T TO-220AB
600 V
35 m A
30 A
T3050H-6T 50 m A
T3035H-6I TO-220AB
insulated 35 mA
T3050H-6I 50 m A
www.st.com
Character istics T3035H, T3050 H
2/9 DocID17029 Rev 5
1 Characteristics
Tabl e 2. Abs ol ute maximum ratin gs
Symbol Parameter Value Unit
IT(RMS) On-state rms cu rr ent (Full sine wave) TO-220AB Tc = 121 °C 30 A
TO-220AB
insulated Tc = 92 °C
ITSM Non repetitive surge peak on-state curr ent
(Full cycle, Tj initial = 25 °C) f = 50 Hz t = 20 ms 270 A
f = 60 Hz t = 16.7ms 284
I²tI
²t val u e fo r fu s in g tp = 10 ms 487 A²s
VRSM,
VDSM Non repetitive surge peak off-st ate volt age tp = 10 µs Tj = 25 °C VRRM, VDRM
+100 V
dI/dt Critical rate of rise of on-st ate current
IG = 2 x IGT, tr ≤ 100 ns F = 120 Hz Tj = 150 °C 50 A/µs
IGM Peak gate current tp = 20 µs Tj = 150 °C 4 A
PG(AV) Average gate power dissipation Tj = 150 °C 1 W
Tstg Storage junction temperature range - 40 to + 150 °C
TjOperating junction temperature range - 40 to + 150 °C
Table 3. Electrical chara cteri stics (Tj = 25 °C, unless otherwise specified)
Symbol Test conditions Quadrant Value Unit
T3035H T3050H
IGT (1) VD = 12 V RL = 33 ΩI - II - II I MAX . 35 50 mA
VGT I - II - III MAX. 1 .0 V
VGD VD = VDRM RL = 3.3 kΩI - II - III MIN. 0.15 V
IH (2) IT = 500 mA MAX. 60 75 mA
ILIG = 1.2 IGT I - III MAX. 75 90 mA
II 90 110
dV/dt (2) VD = 67 %VDRM ga te open Tj = 150 °C MIN. 1000 1500 V/µs
(dI/dt)c
(2) Without snubber Tj = 150 °C MIN. 33 44 A/ms
1. Minimum IGT is guaranted at 20 % of IGT max .
2. For both polarities of A2 referenced to A1
DocID17029 Rev 5 3/9
T3035H, T3050 H Characteri stics
Table 4. St atic characteristics
Symbol Test condi tions Value Unit
VTM (1) ITM = 42 A tp = 380 µs Tj = 25 ° C MA X. 1.55 V
Vto (1) Threshold voltage Tj = 150 °C MAX. 0.85 V
Rd (1) Dynamic resist ance Tj = 150 °C MAX. 15 mΩ
IDRM
IRRM
VDRM = VRRM Tj = 25 °C MAX. 10 µA
Tj = 150 °C 8.5
mAVD/VR = 400V (at peak mains voltage) Tj = 150 °C MAX. 7
VD/VR = 200V (at peak mains voltage) Tj = 150 °C 5.5
1. for both pol aritie s of A2 referenced to A1.
Table 5. Thermal resist ance
Symbol Parameter Value Unit
Rth(j-c) Junction to case (AC) TO-220AB 0.8 °C/W
TO- 2 2 0AB In s ul 1.6
Rth(j-a) Junction to ambient TO-220AB / TO-220AB Insul 60 °C/W
Figure 1. Maximum power dissipati on versus
rms on-state current (full cycle 180°) Figure 2. On-state rms current vs case
temperature
0
5
10
15
20
25
30
35
40
0510
15 20 25 30
P(W)
I (A)
T(RMS)
7F&
72$%LQ V
72$%
,7506$
Figure 3. On-st ate rms current versus ambient
tempe rature (free air convecti on) F igure 4. R elative variatio n of thermal
impeda nce vers us pu lse duration
7D&
,7506$
. >=WK5WK@
(
(
(
( ( ( ( ( ( (
W V
S
=WKMF
=WKMD
Character istics T3035H, T3050 H
4/9 DocID17029 Rev 5
Figure 5. Relative vari ation of gate trigg er
current and gate trigger volt age versus junction
temperature
Fig ur e 6. Relat ive vari ation of hold ing curre nt
and latching current vs junction temperatur e
(typical value)
,4
*7
, 44
*7
9 444
*7
7 &
M
7\SLFDOYDOXH
,*79*7>7M@,*79*7>7M &@
7 &
M
,+
,/
,+,/>7M@,+,/>7M &@
Figure 7. Surge peak on-st ate current vs
number of cycles Figur e 8. Non repetitive surge peak on-state
current for a sinusoidal pulse
2QHF\ FOH
W PV
1XPEHURIF\FOHV
1RQUHSHWLWLYH
7 LQLWLDO &
M
5HSHWLWLYH
7 &
&
,760$
,760$,ðW$ðV
ZLGWK W PV DQGFRUUHVSRQGLQJYDOXHRI,ðW
S WPV
7MLQLWLDO &
,ðW
,
GOGWOLPLWDWLRQ $V
760
Figure 9. On state characteristics
(maximum values) F ig ur e 10. Relative variation of critical rate of
decrease of main current verus junction
temperature
I (A)
TM
1
10
100
1000
0123
1
10
100
1000
012345
T max:
V = 0.85 V
R = 15 m
J
to
dΩ
V (V)
TM
T = 150 °C
jT = 25 °C
j
0
1
2
3
4
5
6
7
8
9
10
11
25 50 75 100 125 150
T (°C)
j
(dI/dt) [T ]/(dI/dt) [T = 150 °C]
Cj Cj
DocID17029 Rev 5 5/9
T3035H, T3050 H Characteri stics
Figure 13. Accep ta ble junction to ambien t thermal resistance versus repetitive peak off-sta te
voltage and ambient temperature
Figure 11. Relative variation of static dV/dt
immunity vs junction temperature Figure 12. Relative variation of leakage current
vs junction tem perature for differen t values of
blockin g voltage
0
1
2
3
4
5
6
7
8
9
10
11
25 50 75 100 125 150
dV/dt[T ]/dV/dt[T = 150 °C]
jj
V=V= 400V
DR
T (°C)
j
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
25 50 75 100 125 150
T (°C)
j
I/I[T;V/V]/I/I
DRM RRM j DRM RRM DRM RRM
[T = 150 °C; 600 V]
j
V=V= 200V
DRM RRM
V=V= 400V
DRM RRM
V=V= 600V
DRM RRM
5 &:
WKMD
7D&
YROWDJHDQGDPELHQWWHPSHUDWXUH
9 9 9
'50 550
9 9 9
'50 550
9 9 9
'50 550
Pack age information T3035H, T3050 H
6/9 DocID17029 Rev 5
2 Package information
•Epoxy meets UL94, V0
•Lead-free package
•Recomm ended t orque: 0.4 to 0.6 N ·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECO PACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark .
2.1 TO-220AB (insulated and non-insulated) package
information
Figure 14. TO-220AB (insulated and non-insula ted ) dimension definitions
C
b2
c2
F
Ø I
L
A
a1
a2
B
eb1
I4
l3
l2
c1
M
DocID17029 Rev 5 7/9
T3035H, T3050 H Packag e in formati on
Table 6. TO -220AB package mechani cal data
Ref.
Dimensions
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 15.20 15.90 0.598 0.625
a1 3.75 0.147
a2 13.00 14.00 0.511 0.551
B 10.00 10.40 0.393 0.409
b1 0.61 0.88 0.024 0.034
b2 1.23 1.32 0.048 0.051
C 4.40 4.60 0.173 0.181
c1 0.49 0.70 0.019 0.027
c2 2.40 2.72 0.094 0.107
e 2.40 2.70 0.094 0.106
F 6.20 6.60 0.244 0.259
ØI 3.75 3.85 0.147 0.151
I4 15.80 16.40 16.80 0.622 0.646 0.661
L 2.65 2.95 0.104 0.116
l2 1.14 1.70 0.044 0.066
l3 1.14 1.70 0.044 0.066
M 2.60 0.102
Order ing informati on T3035H, T3050 H
8/9 DocID17029 Rev 5
3 Ordering information
Figure 15. Ordering information scheme
4 Revision history
Table 7. Ordering information
Order code Marking Pa ckage Weight Base qty Delivery mode
T3035H-6T T3035H 6T TO-220AB
2.3 g 50 Tube
T3050H-6T T3050H 6T
T3035H-6I T3035 H 6I TO-220AB
Insulated
T3050H-6I T3050 H 6I
7+ 7
7ULDFVHULHV
&XUUHQW
6HQVLWLYLW\
+LJK 7HPSHUDWXUH
9ROWDJH
$
P$
P$
9
3DFNDJH
7 72$%
, 72$%LQV
Table 8. Document revision history
Date Revision Changes
28-Jan-2010 1 I nitial release.
17-May-2010 2 Updated maximum Tj in Table 2.
14-Dec-2010 3 Updated IGT in Table 1.
20-Sep-2011 4 Updated: Fea tur es.
21-Jul-2015 5 Update Table 2 and reformatt ed to current st andard.
DocID17029 Rev 5 9/9
T3035H, T3050 H
IMP ORTANT NOTICE – PL EA SE REA D CAREFULLY
STM i croelectroni cs NV and its subsidi aries (“S T”) reser ve the ri ght t o m ake ch anges , c orrec ti ons , enhan cements, m odi fic ations , and
improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on
ST produc ts before pl acing orders. S T produc ts are sold purs uant to ST ’s te rm s and c onditions of sale i n pl ace at the t i m e of order
acknowledgement.
Purchasers are solely responsible for the choice, sele ction, and use of ST product s and S T assumes no liability for appli cation assistance or
the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST pr oducts wi th pr ovisions differen t f rom the info rm ation set forth herei n sha l l v oi d any w arrant y gra nted by ST for such product.
ST and the ST l ogo are tradem arks of S T. All othe r product or servi ce names are the property of their resp ectiv e owners.
Info rm ation in th i s document su persedes and replaces information prev i ously suppli ed in any prior versi ons of t hi s docum ent.
© 2015 STMicroelectronics – All rights reserved
