Rev.4.00, Jun. 13, 2005, page 1 of 6
HAT1090C
Silicon P Channel MOS FET
Power Switching REJ03G1228-0400
Rev.4.00
Jun. 13, 2005
Features
• Low on-resistance
RDS(on) = 50 mΩ typ. (at VGS = –4.5 V)
• Low drive current.
• 2.5 V gate drive devi ces.
• High densit y mounting
Outline
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK-6)
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
123
654
Indexband
G
D
S
6
1
5
D
2D
3D
4
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to Source voltage VDSS –20 V
Gate to Source voltage VGSS ±12 V
Drain current ID –2.5 A
Drain peak current ID (pulse)Note1 –10 A
Body - Drain diode reverse dr ain current IDR –2.5 A
Channel dissipation PchNote 2 900 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epox y board. (FR4 40 × 40 × 1.6mm), Ta = 25°C
HAT1090C
Rev.4.00, Jun. 13, 2005, page 2 of 6
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min. Typ. Max. Unit Test Conditions
Drain to Source breakdown voltage V(BR)DSS –20 — — V ID = –10 mA, VGS = 0
Gate to Source breakdown voltage V(BR)GSS ±12 — — V IG = ±100 µA, VDS = 0
Gate to Source leakage current IGSS — — ±10 µA VGS = ±10 V, VDS = 0
Drain to Source leakage curr ent IDSS — — –1 µA VDS = –20 V, VGS = 0
Gate to Source cutoff voltage VGS(th) –0.4 — –1.4 V ID = –1 mA, VDS = –10 V Note3
— 50 65 mΩ I
D = –1.3 A, VGS = –4.5 V Note3 Drain to Source on state resistance RDS(on) — 74 104 mΩ I
D = –1.3 A, VGS = –2.5 V Note3
Forward transfer admittance | yfs | 3.5 5.5 — S ID = –1.3 A, VDS = –10 V Note3
Input capacitance Ciss — 590 — pF
Output capacitance Coss — 175 — pF
Reverse transfer capacitance Crss — 60 — pF
VDS = –10 V, VGS = 0,
f = 1 MHz
Total gate charge Qg — 7 — nC
Gate to Source charge Qgs — 1.2 — nC
Gate to Drain charge Qgd — 2.5 — nC
VDS = -10 V, VGS = -4.5 V,
ID = -2.5 A
Turn - on delay time td(on) — 15 — ns
Rise time tr — 17 — ns
Turn - off delay time td(off) — 40 — ns
Fall time tf — 20 — ns
VDS = -10 V, VGS = -4.5 V,
ID = -1.3 A, RL = 7.7 Ω,
Rg = 4.7 Ω
Body - Drain diode for ward voltage VDF — –0.8 –1.1 V IF = -2.5 A, VGS = 0
Notes: 3. Pulse test
HAT1090C
Rev.4.00, Jun. 13, 2005, page 3 of 6
Main Characteristics
1.6
1.2
0.8
0.4
050 100 150 200
–
30
–
10
–
3
–
1
–
0.3
–
0.1
–0.1 –0.3–0.03 –1–3–10 –30 –100
–
10
–
8
–
6
–
4
–
2
0
–
2
–
4
–
6
–
8
–
10
–
10
–
8
–
6
–
4
–
2
0
–
1
–
2
–
3
–
4
–
5
–
0.03
–0.01
–
100
–
120
–
80
–
40
0–2 –4 –6 –8 –10
–
0.1
–
10
–
1
–
100
100
1000
10
–
160
–1.3 A
–1 A
–
10 V
–
4.5 V
–
2.5 V
–
1.6 V
–
2.2 V
–
2 V
–
1.8 V
DC operation
10 µs100 µs
PW = 10 ms
1 ms
Power Dissipation Pch (W)
Ambient Temperature Tc (°C)
Power vs. Temperature Derating
Drain Source Voltage V
DS (V)
Drain Current ID (A)
Maximum Safe Operation Area
Test condition.
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm)
When using the FR4 board.
1 shot pulse, Ta = 25°C
Operation in this
area is limited by
RDS(on)
Drain Current ID (A)
Drain Current ID (A)
Typical Output Characteristics Typical Transfer Characteristics
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)
Gate to Source Voltage VGS (V) Drain Current ID (A)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
RDS(on) (mΩ)
Drain to Source Saturation Voltage
VDS(on) (mV)
Pulse Test
Pulse Test
V
GS
= –2.5 V
–4.5 V
V
GS
= –1.4 V
Pulse Test V
DS
= –10 V
Pulse Test
–
25
°C
25°C
Tc = 75°C
HAT1090C
Rev.4.00, Jun. 13, 2005, page 4 of 6
120
200
160
80
40
–25 0 25 50 75 100 125 150
0
–0.03–0.01 –0.3 –3 –10
100
30
10
3
1
0.3
0.1
–0.1 –1
Pulse Test
0–20
10000
1000
3000
0
0
0
–10 –2
–20 –4
–30 –6
4 8 12 16 20
–8
100
1000
10
1
–0.1 –0.3 –1 –3 –10 –100
–30
300
100
30
10
Ciss
Coss
Crss
–10
0–0.4 –0.8 –1.2 –1.6 –2.0
–10
–4
Pulse Test
–2
–6
–8
ID = –2.5 A
ID = –1, –1.3, –2.5 A
–2.5 V
–5 V
–40
–1, –1.3 A
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
R
DS(on)
(mΩ)
Case Temperature Tc (°C) Drain Current I
D
(A)
Capacitance C (pF)
Gate Charge Qg (nC)
Dynamic Input Characteristics Typical Capacitance vs.
Drain to Source Voltage
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Drain to Source Voltage V
DS
(V)
Switching Characteristics
Switching Time t (ns)
Drain Current I
D
(A)
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current I
DR
(A)
Source to Drain Voltage V
SD
(V)
td(off)
td(on)
tr
tf
V
GS
= –4.5 V, V
DD
= –10 V
R
G
= 4.7 Ω, Ta = 25°C
V
GS = 0, 5 V
VDD = –5 V
–10 V
–20 V
VDD = –5 V
–10 V
–20 V
ID = –2.5 A
VDD
VGS
VGS = 0
f = 1 MHz
V
DS
= –10 V
Pulse Test
75°C
25°C
Tc = –25°C
V
GS = –4.5 V
HAT1090C
Rev.4.00, Jun. 13, 2005, page 5 of 6
Vin Monitor
D.U.T.
Vin
-4.5 V
RL
V
= -10 V
DD
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor
4.7 90%
tf
Switching Time Test Circuit Waveform
10%
HAT1090C
Rev.4.00, Jun. 13, 2005, page 6 of 6
Package Dimensions
D
A
AA
A
A
A
2
A
1
L
LP
S
S
S
y
b
b2
l1
M
x
EH
E
e
e
e1
c
Pattern of terminal position areas
A
A
1
A
2
b
b
1
c
c
1
D
E
e
H
E
L
L
P
x
y
b
2
e
1
l
1
0.6
0
0.7
0.15
0.1
1.9
1.6
2.05
0.1
0.15
0.22
0.2
0.13
0.11
2.0
1.7
0.65
2.1
0.2
1.65
0.8
0.01
0.79
0.3
0.15
2.1
1.8
2.15
0.3
0.45
0.05
0.05
0.35
0.5
Dimension in Millimeters
Reference
Symbol
Min Nom Max
0.0065g
MASS[Typ.]
CMFPAK-6 / CMFPAK-6VPWSF0006JA-A
RENESAS CodeJEITA Package Code Package Name
b
A-A Section
b
1
c
1
c
Ordering Information
Part Name Quantity Shipping Container
HAT1090C-EL-E 3000 pcs Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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