AON6500
30V N-Channel AlphaMOS
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 200A
R
DS(ON)
(at V
GS
=10V) < 0.95mΩ
R
DS(ON)
(at V
GS
= 4.5V) < 1.3mΩ
100% UIS Tested
100% R
g
Tested
Symbol
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5V
GS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
• See Note I
Maximum
Parameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
30V
Applications
Units
G
D
S
Top View
1
2
3
4
8
7
6
5
PIN1
DFN5X6
Top View Bottom View
PIN1
Symbol
V
DS
V
GS
I
DM
I
AS
E
AS
V
DS
Spike V
SPIKE
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJC
Maximum Junction-to-Case
Max
P
D
W
Power Dissipation
A
P
DSM
°C/W
°C/W
Maximum Junction-to-Ambient
A D
1
55
1.5
Drain-Source Voltage 30
Maximum
Parameter
W
T
C
=25°C
Power Dissipation
B
T
A
=70°C
125
83
4.7
V±20Gate-Source Voltage
450
A
33
Continuous Drain
Current
G
V
°C
Pulsed Drain Current
C
71
T
A
=70°C
Maximum Junction-to-Ambient
°C/W
R
θJA
14
40
T
A
=25°C
UnitsParameter Typ
57
Junction and Storage Temperature Range
A
50Avalanche Current
C
7.3
-55 to 150
I
DSM
Continuous Drain
Current
36
Avalanche energy L=0.1mH
C
17
T
C
=100°C
Units
Thermal Characteristics
mJ
100ns
A
V
I
D
200
151
T
C
=25°C
T
C
=100°C
T
A
=25°C
Rev 1: September 2017
www.aosmd.com Page 1 of 6
AON6500
Symbol Min Typ Max Units
BV
DSS
30 V
V
DS
=30V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
100 nA
V
GS(th)
Gate Threshold Voltage 1 1.4 2 V
0.75 0.95
T
J
=125°C 1.1 1.4
1 1.3 mΩ
g
FS
100 S
V
SD
0.7 1 V
I
S
100 A
C
iss
7036 pF
C
oss
2778 pF
C
rss
353 pF
R
g
0.5 1.1 1.7 Ω
Q
g
(10V)
107 145 nC
Q
g
(4.5V)
49.7 68 nC
Q
gs
11.7 nC
Q
gd
21.4 nC
t
D(on)
12.3 ns
t
r
12.8 ns
t
68.5
ns
I
DSS
Diode Forward Voltage
DYNAMIC PARAMETERS
V
GS
=4.5V, I
D
=20A
V
GS
=10V, I
D
=20A
Gate-Body leakage current V
DS
=0V, V
GS
= ±20V
I
S
=1A,V
GS
=0V
Maximum Body-Diode Continuous Current
µA
Drain-Source Breakdown Voltage
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
I
D
=250µA, V
GS
=0V
Gate Source Charge V
GS
=10V, V
DS
=15V, I
D
=20A
Turn-On Rise Time
Zero Gate Voltage Drain Current
mΩ
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=15V, f=1MHz
V
DS
=V
GS,
I
D
=250µA
Output Capacitance
Turn-Off DelayTime
Gate Drain Charge
Total Gate Charge
V
GS
=10V, V
DS
=15V, R
L
=0.75Ω,
R
=3
Ω
R
DS(ON)
Static Drain-Source On-Resistance
Gate resistance
Forward Transconductance
SWITCHING PARAMETERS
Turn-On DelayTime
V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
V
DS
=5V, I
D
=20A
Input Capacitance
t
D(off)
68.5
ns
t
f
28.8 ns
t
rr
31 ns
Q
rr
106 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Turn-Off Fall Time
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time
I
F
=20A, dI/dt=500A/µs
Turn-Off DelayTime
I
F
=20A, dI/dt=500A/µs
R
GEN
=3
Ω
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
I. For application requiring slow >1ms turn-on/turn-off, please consult AOS FAE for proper product selection.
Rev 1: September 2017 www.aosmd.com Page 2 of 6
AON6500
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
20
40
60
80
100
1.0 1.5 2.0 2.5 3.0
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
0.0
0.5
1.0
1.5
2.0
0 5 10 15 20 25 30
RDS(ON) (mΩ)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=4.5V
ID=20A
VGS=10V
ID=20A
25°C
125°C
V
DS
=5V
VGS=4.5V
VGS=10V
0
20
40
60
80
100
012345
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS
=2V
2.5V
4.5V
10V
3V
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-01
1.00E+00
1.00E+01
1.00E+02
0 0.2 0.4 0.6 0.8 1 1.2
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125
°
C
(Note E)
0
0.5
1
1.5
2
2 4 6 8 10
RDS(ON) (mΩ)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=20A
25°C
125°C
Rev 1: September 2017 www.aosmd.com Page 3 of 6
AON6500
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 20 40 60 80 100 120
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
0 5 10 15 20 25 30
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
100
200
300
400
500
0.0001 0.001 0.01 0.1 1 10
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
Coss
C
rss
VDS=15V
ID=20A
TJ(Max)=150°C
TC=25°C
10
µ
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased
10
µ
s
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
T
C
=25°C
100
µ
s
(Note F)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Safe Operating Area (Note F)
RθJC=1.5°C/W
Rev 1: September 2017 www.aosmd.com Page 4 of 6
AON6500
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
20
40
60
80
100
0 25 50 75 100 125 150
Power Dissipation (W)
TCASE (°C)
Figure 12: Power De-rating (Note F)
0
50
100
150
200
250
0 25 50 75 100 125 150
Current rating ID(A)
TCASE (°C)
Figure 13: Current De-rating (Note F)
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-
Ambient (Note H)
TA=25°C
0.001
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10 100 1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Ambient (Note H)
RθJA=55°C/W
Rev 1: September 2017 www.aosmd.com Page 5 of 6
AON6500
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VD C
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Id
+
L
Vds
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
DSS
2
E = 1/2 LI
AR
AR
Vdd
Vgs
Vgs
Rg
DUT
-
+
VDC
Vgs
Id
Vgs
I
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
Rev 1: September 2017 www.aosmd.com Page 6 of 6