1
IPZ60R017C7
Rev.2.0,2016-03-01Final Data Sheet
PG-TO247-4
Drain
Pin 1
Gate
Pin 4
Power
Source
Pin 2
Driver
Source
Pin 3
MOSFET
600VCoolMOSªC7PowerTransistor
CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.
600VCoolMOS™C7seriescombinestheexperienceoftheleadingSJ
MOSFETsupplierwithhighclassinnovation.
The600VC7isthefirsttechnologyeverwithRDS(on)*Abelow1Ohm*mm².
Features
•Suitableforhardandsoftswitching(PFCandhighperformanceLLC)
•IncreasedMOSFETdv/dtruggednessto120V/ns
•IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg
•BestinclassRDS(on)/package
•Easytouse/drive
•Pb-freeplating,halogenfreemoldcompound
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
•4pinkelvinsourceconcept
Benefits
•IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe
application
•Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency
•Enablinghighersystemefficiencybylowerswitchinglosses
•Increasedpowerdensitysolutionsduetosmallerpackages
•Suitableforapplicationssuchasserver,telecomandsolar
•Upto0.5%betterfullloadefficiency@100kHzcomparedtoconventional
3pinpackage
Applications
PFCstagesandPWMstages(TTF,LLC)forhighpower/performance
SMPSe.g.Computing,Server,Telecom,UPSandSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter Value Unit
VDS @ Tj,max 650 V
RDS(on),max 17 mΩ
Qg.typ 240 nC
ID,pulse 495 A
ID,continuous @ Tj<150°C 129 A
Eoss@400V 30 µJ
Body diode di/dt 200 A/µs
Type/OrderingCode Package Marking RelatedLinks
IPZ60R017C7 PG-TO 247-4 60C7017 see Appendix A
2
600VCoolMOSªC7PowerTransistor
IPZ60R017C7
Rev.2.0,2016-03-01Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3
600VCoolMOSªC7PowerTransistor
IPZ60R017C7
Rev.2.0,2016-03-01Final Data Sheet
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current1) ID-
-
-
-
109
69 ATC=25°C
TC=100°C
Pulsed drain current2) ID,pulse - - 495 A TC=25°C
Avalanche energy, single pulse EAS - - 582 mJ ID=12.6A; VDD=50V; see table 10
Avalanche energy, repetitive EAR - - 2.91 mJ ID=12.6A; VDD=50V; see table 10
Avalanche current, single pulse IAS - - 12.6 A -
MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V
Gate source voltage (static) VGS -20 - 20 V static;
Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)
Power dissipation Ptot - - 446 W TC=25°C
Storage temperature Tstg -55 - 150 °C -
Operating junction temperature Tj-55 - 150 °C -
Mounting torque - - - 60 Ncm M3 and M3.5 screws
Continuous diode forward current IS- - 109 A TC=25°C
Diode pulse current2) IS,pulse - - 495 A TC=25°C
Reverse diode dv/dt3) dv/dt - - 20 V/ns VDS=0...400V,ISD<=12.6A,Tj=25°C
see table 8
Maximum diode commutation speed dif/dt - - 200 A/µsVDS=0...400V,ISD<=12.6A,Tj=25°C
see table 8
Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min
1) Limited by Tj max.
2) Pulse width tp limited by Tj,max
3) Identical low side and high side switch
4
600VCoolMOSªC7PowerTransistor
IPZ60R017C7
Rev.2.0,2016-03-01Final Data Sheet
2Thermalcharacteristics
Table3Thermalcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - - 0.28 °C/W -
Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded
Thermal resistance, junction - ambient
for SMD version RthJA - - - °C/W n.a.
Soldering temperature, wavesoldering
only allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s
5
600VCoolMOSªC7PowerTransistor
IPZ60R017C7
Rev.2.0,2016-03-01Final Data Sheet
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA
Gate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS,ID=2.91mA
Zero gate voltage drain current IDSS -
-
-
50
2
-µAVDS=600,VGS=0V,Tj=25°C
VDS=600,VGS=0V,Tj=150°C
Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) -
-
0.015
0.033
0.017
-ΩVGS=10V,ID=58.2A,Tj=25°C
VGS=10V,ID=58.2A,Tj=150°C
Gate resistance RG- 0.45 - Ωf=1MHz,opendrain
Table5Dynamiccharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 9890 - pF VGS=0V,VDS=400V,f=250kHz
Output capacitance Coss - 200 - pF VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energy
related1) Co(er) - 375 - pF VGS=0V,VDS=0...400V
Effective output capacitance, time
related2) Co(tr) - 3840 - pF ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time td(on) - 30 - ns VDD=400V,VGS=13V,ID=58.2A,
RG=1.8Ω;seetable9
Rise time tr- 13 - ns VDD=400V,VGS=13V,ID=58.2A,
RG=1.8Ω;seetable9
Turn-off delay time td(off) - 106 - ns VDD=400V,VGS=13V,ID=58.2A,
RG=1.8Ω;seetable9
Fall time tf- 3 - ns VDD=400V,VGS=13V,ID=58.2A,
RG=1.8Ω;seetable9
Table6Gatechargecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 50 - nC VDD=400V,ID=58.2A,VGS=0to10V
Gate to drain charge Qgd - 85 - nC VDD=400V,ID=58.2A,VGS=0to10V
Gate charge total Qg- 240 - nC VDD=400V,ID=58.2A,VGS=0to10V
Gate plateau voltage Vplateau - 5.0 - V VDD=400V,ID=58.2A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
6
600VCoolMOSªC7PowerTransistor
IPZ60R017C7
Rev.2.0,2016-03-01Final Data Sheet
Table7Reversediodecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Diode forward voltage VSD - 0.9 - V VGS=0V,IF=58.2A,Tj=25°C
Reverse recovery time trr - 630 - ns VR=400V,IF=58.2A,diF/dt=100A/µs;
see table 8
Reverse recovery charge Qrr - 18 - µC VR=400V,IF=58.2A,diF/dt=100A/µs;
see table 8
Peak reverse recovery current Irrm - 55 - A VR=400V,IF=58.2A,diF/dt=100A/µs;
see table 8
7
600VCoolMOSªC7PowerTransistor
IPZ60R017C7
Rev.2.0,2016-03-01Final Data Sheet
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W]
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
400
450
500
Ptot=f(TC)
Diagram2:Safeoperatingarea
VDS[V]
ID[A]
100101102103
10-3
10-2
10-1
100
101
102
103
1 µs
10 µs100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
VDS[V]
ID[A]
100101102103
10-3
10-2
10-1
100
101
102
103
1 µs10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=80°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K/W]
10-5 10-4 10-3 10-2 10-1
10-3
10-2
10-1
100
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tP);parameter:D=tp/T
8
600VCoolMOSªC7PowerTransistor
IPZ60R017C7
Rev.2.0,2016-03-01Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A]
0 5 10 15 20
0
100
200
300
400
500
600
700
800
20 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.outputcharacteristics
VDS[V]
ID[A]
0 5 10 15 20
0
50
100
150
200
250
300
350
400
450
20 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
ID[A]
RDS(on)[Ω]
0 50 100 150 200 250 300 350 400 450 500
0.03
0.04
0.05
0.06
0.07
20 V
5.5 V 6 V
6.5 V 7 V
10 V
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Diagram8:Drain-sourceon-stateresistance
Tj[°C]
RDS(on)[Ω]
-50 -25 0 25 50 75 100 125 150
0.005
0.010
0.015
0.020
0.025
0.030
0.035
0.040
typ
98%
RDS(on)=f(Tj);ID=58.2A;VGS=10V
9
600VCoolMOSªC7PowerTransistor
IPZ60R017C7
Rev.2.0,2016-03-01Final Data Sheet
Diagram9:Typ.transfercharacteristics
VGS[V]
ID[A]
0 2 4 6 8 10 12
0
100
200
300
400
500
600
700
800
150 °C
25 °C
ID=f(VGS);VDS=20V;parameter:Tj
Diagram10:Typ.gatecharge
Qgate[nC]
VGS[V]
0 50 100 150 200 250 300
0
2
4
6
8
10
12
400 V
120 V
VGS=f(Qgate);ID=58.2Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
VSD[V]
IF[A]
0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60
10-1
100
101
102
103
125 °C 25 °C
IF=f(VSD);parameter:Tj
Diagram12:Avalancheenergy
Tj[°C]
EAS[mJ]
25 50 75 100 125 150
0
50
100
150
200
250
300
350
400
450
500
550
600
EAS=f(Tj);ID=12.6A;VDD=50V
10
600VCoolMOSªC7PowerTransistor
IPZ60R017C7
Rev.2.0,2016-03-01Final Data Sheet
Diagram13:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS)[V]
-60 -30 0 30 60 90 120 150
520
540
560
580
600
620
640
660
680
700
VBR(DSS)=f(Tj);ID=1mA
Diagram14:Typ.capacitances
VDS[V]
C[pF]
0 100 200 300 400
100
101
102
103
104
105
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=250kHz
Diagram15:Typ.Cossstoredenergy
VDS[V]
Eoss[µJ]
0 100 200 300 400
0
5
10
15
20
25
30
Eoss=f(VDS)
11
600VCoolMOSªC7PowerTransistor
IPZ60R017C7
Rev.2.0,2016-03-01Final Data Sheet
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform
t
V ,I
Irrm
IF
VDS
10 %Irrm
trr
tFtS
Q
FQ
S
dIF/ dt
dIrr / dt
VDS(peak)
Q
rr = QF+ Q
S
trr =tF+tS
VDS
IF
VDS
IF
Rg1
Rg2
Rg1 = Rg2
Table9switchingtimes(ss)
Switching times test circuit for inductive load Switching times waveform
VDS
VGS
td(on) td(off)
tr
ton
tf
toff
10%
90%
VDS
VGS
Table10Unclampedinductiveload(ss)
Unclamped inductive load test circuit Unclamped inductive waveform
VDS
V(BR)DS
ID
VDS
VDS
ID
12
600VCoolMOSªC7PowerTransistor
IPZ60R017C7
Rev.2.0,2016-03-01Final Data Sheet
6PackageOutlines
Figure1OutlinePG-TO247-4
13
600VCoolMOSªC7PowerTransistor
IPZ60R017C7
Rev.2.0,2016-03-01Final Data Sheet
7AppendixA
Table11RelatedLinks
•IFXCoolMOSTMC7Webpage:www.infineon.com
•IFXCoolMOSTMC7applicationnote:www.infineon.com
•IFXCoolMOSTMC7simulationmodel:www.infineon.com
•IFXDesigntools:www.infineon.com
14
600VCoolMOSªC7PowerTransistor
IPZ60R017C7
Rev.2.0,2016-03-01Final Data Sheet
RevisionHistory
IPZ60R017C7
Revision:2016-03-01,Rev.2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2016-03-01 Release of final version
TrademarksofInfineonTechnologiesAG
AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,
EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,
ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.
TrademarksupdatedAugust2015
OtherTrademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
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respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
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Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.