Green DMTH3004LK3 30V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V Features RDS(ON) max ID max TC = +25C 4m@VGS = 10V 75A 7m@VGS = 4.5V 75A Low On-Resistance Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability NEW PRODUCT Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Applications Power Management Functions DC-DC Converters Backlighting Top View Case:TO252 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Matte Tin Finish. Solderable per MIL-STD-202, Method 208 Weight: 0.315 grams (Approximate) Pin Out Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMTH3004LK3-13 Notes: Case TO252 Packaging 2500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information H3004L YYWW DMTH3004LK3 Document number: DS37859 Rev. 3 - 2 =Manufacturer's Marking H3004L = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 15 = 2015) WW = Week Code (01 to 53) 1 of 6 www.diodes.com November 2015 (c) Diodes Incorporated DMTH3004LK3 Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol VDSS Drain-Source Voltage Gate-Source Voltage VGSS Continuous Drain Current (Note 6) VGS = 10V NEW PRODUCT Value 30 +20 -16 75 75 TC = +25C TC = +70C TA = +25C TA = +70C Steady State Steady State ID V A 21 17 160 3 10.7 287 ID Pulsed Drain Current (380s Pulse, Duty Cycle=1%) Maximum Continuous Body Diode Forward Current (Note 6) Avalanche Current (Note 7) L=5mH Avalanche Energy (Note 7) L=5mH Unit V IDM IS IAS EAS A A A A mJ Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Value 1.9 RJA 80 Steady state Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Steady state Thermal Resistance, Junction to Case Operating and Storage Temperature Range Electrical Characteristics Symbol PD PD 3 W RJA RJC TJ, TSTG 50 1.4 -55 to +175 C/W C/W C (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Symbol Min Typ Max Unit BVDSS IDSS 30 - - V A IGSS - - 10 100 -100 ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) RDS(ON) 3 4 7 1 m VSD 3.3 5.5 0.75 V Static Drain-Source On-Resistance 1 - Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR - 2370 1360 240 0.6 20 44 7 8 6.2 4.3 21 8 25 37 - pF pF pF nC nC nC nC ns ns ns ns ns nC Gate-Source Leakage Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: Unit W C/W nA V Test Condition VGS = 0V, ID = 1mA VDS = 24V, VGS = 0V VGS = +20V, VDS = 0V VGS = -16V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 20A VGS = 4.5V, ID = 7A VGS = 0V, IS = 1A VDS =15V, VGS = 0V, f = 1MHz VDS =0V, VGS = 0V, f = 1MHz VDS = 15V, ID =20A VDD = 15V, VGS = 10V, RL = 0.75, RG = 3, ID =20A IF =15A, di/dt=500A/s 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMTH3004LK3 Document number: DS37859 Rev. 3 - 2 2 of 6 www.diodes.com November 2015 (c) Diodes Incorporated DMTH3004LK3 30 30.0 VGS = 10.0V VGS = 4.5V 25 VGS = 3.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 5V VGS = 4.0V VGS = 3.5V 20.0 15.0 VGS = 2.8V 10.0 5.0 VGS = 2.2V 15 150 125 10 85 175 25 -55 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 0.007 0.006 VGS = 4.5V 0.005 0.004 0.003 0 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 20 5 VGS = 2.5V 0.0 VGS = 10V 0.002 150 175 0.005 125 0.004 85 25 0.003 -55 0.002 5 0.08 0.07 0.06 0.05 0.04 0.03 0.02 ID = 20A 0.01 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = 10V 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 0.09 0 0 5 10 15 20 25 30 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 0.006 0.5 0.1 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () NEW PRODUCT 25.0 2 4 6 8 10 12 14 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 16 2.5 2 VGS = 10V, ID = 20A 1.5 VGS = 4.5V, ID = 15A 1 0.5 0 0 5 10 15 20 ID, DRAIN CURRENT (A) 25 30 Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature DMTH3004LK3 Document number: DS37859 Rev. 3 - 2 3 of 6 www.diodes.com -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE () Figure 6. On-Resistance Variation with Junction Temperature November 2015 (c) Diodes Incorporated 2.5 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.009 0.008 0.007 VGS = 4.5V, ID = 15A 0.006 0.005 0.004 0.003 VGS = 10V, ID = 20A 0.002 0.001 -50 -25 2 ID = 1mA 1.5 ID = 250A 1 0.5 0 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE () -50 Figure 7. On-Resistance Variation with Junction Temperature 20 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE () Figure 8. Gate Threshold Variation vs. Junction Temperature 10000 f=1MHz CT, JUNCTION CAPACITANCE (pF) VGS = 0V IS, SOURCE CURRENT (A) 15 10 TJ = 125oC TJ = 85oC TJ = 150oC 5 TJ = TJ = 175oC 25oC TJ = -55oC Ciss 1000 0 Coss 100 Crss 10 0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 30 Figure 10. Typical Junction Capacitance 1000 10 RDS(ON) Limited ID, DRAIN CURRENT (A) 8 VGS (V) NEW PRODUCT DMTH3004LK3 6 4 VDS = 15V, ID = 20A 2 0 5 10 15 25 30 35 40 Qg (nC) Figure 11. Gate Charge DMTH3004LK3 Document number: DS37859 Rev. 3 - 2 20 45 50 PW =1s 100 PW =100s PW =1ms PW =10ms 10 PW =100ms PW =1s 1 0.1 0 PW =10s TJ(Max) = 175 TC = 25 Single Pulse DUT on Infinite Heatsink VGS= 10V 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 Figure 12. SOA, Safe Operation Area 4 of 6 www.diodes.com November 2015 (c) Diodes Incorporated DMTH3004LK3 1 NEW PRODUCT r(t), TRANSIENT THERMAL RESISTANCE D=0.7 D=0.5 D=0.3 D=0.9 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 RJC(t) = r(t) * RJC RJC = 1.4/W Duty Cycle, D = t1 / t2 D=0.005 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance 1 10 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. E A b3 7 1 c L3 D A2 L4 e H b(3x) b2(2x) Gauge Plane E1 0.508 D1 Seating Plane a L A1 2.74REF DMTH3004LK3 Document number: DS37859 Rev. 3 - 2 5 of 6 www.diodes.com TO252 (DPAK) Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 e 2.286 E 6.45 6.70 6.58 E1 4.32 H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0 10 All Dimensions in mm November 2015 (c) Diodes Incorporated DMTH3004LK3 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Dimensions C X X1 Y Y1 Y2 Y1 NEW PRODUCT Y2 C Value (in mm) 4.572 1.060 5.632 2.600 5.700 10.700 Y X IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright (c) 2015, Diodes Incorporated www.diodes.com DMTH3004LK3 Document number: DS37859 Rev. 3 - 2 6 of 6 www.diodes.com November 2015 (c) Diodes Incorporated