SMD ESD Protection Diode
Page 1
QW-BP001
REV:D
SMD Diodes Specialist
Maximum Rating and Electrical Characteristics
(at TA=25°C unless otherwise noted)
Comchip Technology CO., LTD.
Typ
Parameter Min
Max
Unit
Junction capacitance
Diode breakdown voltage V
ESD capability
Clamping voltage
80 pF
V
kV
6.1 7.1
8
Peak pulse power W
80
Leakage current uA
1.0
60
8
Operation temperature 125 °C
Forward voltage V
1.2
0.1
Conditions
IR = 1mA
VR = 0V,f = 1MHz
IPP = 1A,TP=8/20us
C = 150PF, R = 300ohm,
forward and reverse 10 pulses
VR = 3V
IF = 5uA
IPP = 8A,TP=8/20us 10
Symbol
VBD
CT
VC
ESD
PPP
IL
TJ
VF
Storage temperature TSTG °C
150
Dimensions in inches and (millimeter)
SOT-23
3
1 2
0.119(3.00)
0.110(2.80)
0.056(1.40)
0.047(1.20)
0.079(2.00)
0.071(1.80)
0.041(1.05)
0.035(0.90)
0.020(0.50)
0.012(0.30)
0.006(0.15)
0.002(0.05)
0.100(2.55)
0.089(2.25)
0.004(0.10) max
0.008(0.20) min
-55
-IEC61000-4-2 8kV(Contact), 15kV(air).
-Surface mount package.
-High component density.
Mechanical data
-Case: SOT-23 Standard package, molded
plastic.
-Terminals: Gold plated, solderable per MIL-
STD-750D, method 2026.
-Marking code: E5U
RoHS Device
Features
CPDT-5V0U
-Mounting position: Any.
-Weight: 0.0078 gram (approx.).