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DATA SH EET

Preliminary speciﬁcation 2002 Jun 24

DISCRETE SEMICONDUCTORS

PMEG2010EV

Low VF MEGA Schottky barrier

diode

M3D744

2002 Jun 24 2

Philips Semiconductors Preliminary speciﬁcation

Low VF MEGA Schottky barrier diode PMEG2010EV

FEATURES

•Forward current: 1 A

•Reverse voltage: 20 V

•Very low forward voltage

•Ultra small SMD package

•Flat leads: excellent coplanarity and improved thermal

behaviour.

APPLICATIONS

•Low voltage rectification

•High efficiency DC/DC conversion

•Switch mode power supply

•Inverse polarity protection

•Low power consumption applications.

DESCRIPTION

Planar Maximum Efficiency General Application (MEGA)

Schottky barrier diode with an integrated guard ring for

stress protection in a SOT666 ultra small SMD plastic

package.

PINNING

PIN DESCRIPTION

1 cathode

2 cathode

3 anode

4 anode

5 cathode

6 cathode

handbook, halfpage

123

456

1, 2

5, 6 3, 4

MHC310

Fig.1 Simplified outline (SOT666) and symbol.

Marking code: F1.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134)

Note

1. Only valid, if pins 3 and 4 are connected in parallel.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VRcontinuous reverse voltage −20 V

IFcontinuous forward current −1A

FSM non-repetitive peak forward current t = 8.3 ms half sinewave;

JEDEC method; note 1 −8A

stg storage temperature −65 +150 °C

Tjjunction temperature −125 °C

Tamb operating ambient temperature −65 +125 °C

2002 Jun 24 3

Philips Semiconductors Preliminary speciﬁcation

Low VF MEGA Schottky barrier diode PMEG2010EV

THERMAL CHARACTERISTICS

Notes

1. Refer to SOT666 standard mounting conditions.

2. Mounted on printed circuit-board, 1 cm2 copper area.

Soldering

The only recommended soldering method is reflow soldering.

ELECTRICAL CHARACTERISTICS

Tamb =25°C unless otherwise speciﬁed.

Notes

1. Only valid if pins 1, 2, 5 and 6 are soldered on a 1 cm2 copper solder land.

2. Pulse test: tp= 300 µs; δ= 0.02.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient note 1 405 K/W

note 2 215 K/W

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

VFcontinuous forward voltage IF= 10 mA 240 270 mV

IF= 100 mA 300 350 mV

IF= 1000 mA; note 1; see Fig.2 480 550 mV

IRreverse current VR= 5 V; note 2 5 10 µA

VR= 8 V; note 2 7 20 µA

VR= 15 V; note 2; see Fig.3 10 50 µA

Cddiode capacitance VR= 5 V; f = 1 MHz; see Fig.4 19 25 pF

2002 Jun 24 4

Philips Semiconductors Preliminary speciﬁcation

Low VF MEGA Schottky barrier diode PMEG2010EV

GRAPHICAL DATA

handbook, halfpage

0.60.20 0.4 VF (V)

(mA)

103

102

10−1

MHC311

(1) (2) (3)

Fig.2 Forward current as a function of forward

voltage; typical values.

(1) Tamb = 125 °C.

(2) Tamb =85°C.

(3) Tamb =25°C.

handbook, halfpage

250 51015

(µA)

20 VR (V)

105

104

103

102

MHC312

(1)

(2)

(3)

Fig.3 Reverse current as a function of reverse

voltage; typical values.

(1) Tamb = 125 °C.

(2) Tamb =85°C.

(3) Tamb =25°C.

handbook, halfpage

(pF)

10 20

15 VR (V)

MHC313

Fig.4 Diode capacitance as a function of reverse

voltage; typical values.

f = 1 MHz; Tamb =25°C.

2002 Jun 24 5

Philips Semiconductors Preliminary speciﬁcation

Low VF MEGA Schottky barrier diode PMEG2010EV

PACKAGE OUTLINE

UNIT bpcDE e1HELpw

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

01-01-04

01-08-27

IEC JEDEC EIAJ

mm 0.27

0.17 0.18

0.08 1.7

1.5 1.3

1.1 0.5

1.0 1.7

1.5 0.1

0.1

DIMENSIONS (mm are the original dimensions)

0.3

0.1

SOT666

pin 1 index

detail X

0 1 2 mm

scale

0.6

0.5

123

456

Plastic surface mounted package; 6 leads SOT666

wMA

2002 Jun 24 6

Philips Semiconductors Preliminary speciﬁcation

Low VF MEGA Schottky barrier diode PMEG2010EV

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

DATA SHEET STATUS(1) PRODUCT

STATUS(2) DEFINITIONS

Objective data Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

Preliminary data Qualiﬁcation This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Changes will be

communicated according to the Customer Product/Process Change

Notiﬁcation (CPCN) procedure SNW-SQ-650A.

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseoratany otherconditionsabove thosegivenin the

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationor warrantythatsuchapplicationswill be

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomersusing orsellingthese products

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes, without notice, in the

products, including circuits, standard cells, and/or

software, described or contained herein in order to

improve design and/or performance. Philips

Semiconductors assumes no responsibility or liability for

theuseofanyoftheseproducts,conveys nolicence ortitle

under any patent, copyright, or mask work right to these

products,and makes norepresentationsor warranties that

these products are free from patent, copyright, or mask

work right infringement, unless otherwise specified.

2002 Jun 24 7

Philips Semiconductors Preliminary speciﬁcation

Low VF MEGA Schottky barrier diode PMEG2010EV

NOTES

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Philips Semiconductors – a worldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825

For sales ofﬁces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.

Printed in The Netherlands 613514/01/pp8 Date of release: 2002 Jun 24 Document order number: 9397 750 09771